Fairchild Semiconductor EEPROM 8

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Standby Current	Length
FM24C04UEM8X	Fairchild Semiconductor	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1 mA	512 words	5	5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel	512X8	512	-40 Cel	TIN LEAD	1010DDMR	DUAL		R-PDSO-G8	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	4096 bit	4.5 V	e0	.00005 Amp	4.9 mm
FM24C04UM8	Fairchild Semiconductor	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1 mA	512 words	5	5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	70 Cel	512X8	512	0 Cel	Tin/Lead (Sn/Pb)	1010DDMR	DUAL		R-PDSO-G8	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	4096 bit	4.5 V	e0	.00005 Amp	4.9 mm
FM24C04ULEMT8	Fairchild Semiconductor	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1 mA	512 words	3	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	40	.65 mm	85 Cel	512X8	512	-40 Cel	Tin/Lead (Sn/Pb)	1010DDMR	DUAL		R-PDSO-G8	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.1 MHz	3 mm	Not Qualified	15 ms	I2C	4096 bit	2.7 V	e0	.00001 Amp	4.4 mm
FM24C04ULM8	Fairchild Semiconductor	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1 mA	512 words	3	3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	70 Cel	512X8	512	0 Cel	Tin/Lead (Sn/Pb)	1010DDMR	DUAL		R-PDSO-G8	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	15 ms	I2C	4096 bit	2.7 V	e0	.00001 Amp	4.9 mm
FM24C04ULMT8	Fairchild Semiconductor	EEPROM	COMMERCIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1 mA	512 words	3	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	40	.65 mm	70 Cel	512X8	512	0 Cel	Tin/Lead (Sn/Pb)	1010DDMR	DUAL		R-PDSO-G8	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.1 MHz	3 mm	Not Qualified	15 ms	I2C	4096 bit	2.7 V	e0	.00001 Amp	4.4 mm
FM93C06EN	Fairchild Semiconductor	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	1 mA	16 words	5	5	16	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	85 Cel	16X16	16	-40 Cel	TIN LEAD		DUAL	SOFTWARE	R-PDIP-T8	5.5 V	5.08 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	256 bit	4.5 V	e0	.00005 Amp	9.817 mm
FM93CS56LN	Fairchild Semiconductor	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	1 mA	128 words	3.3	3/5	16	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	70 Cel	128X16	128	0 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8	5.5 V	5.08 mm	1000000 Write/Erase Cycles	.25 MHz	7.62 mm	Not Qualified	15 ms	MICROWIRE	2048 bit	2.7 V	e0	.00001 Amp	9.817 mm
FM93CS66LM8X	Fairchild Semiconductor	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1 mA	256 words	3.3	3/5	16	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	70 Cel	256X16	256	0 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.25 MHz	3.9 mm	Not Qualified	15 ms	MICROWIRE	4096 bit	2.7 V	e0	.00001 Amp	4.9 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.