Intersil EEPROM 18

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
X28HC256J-15	Intersil	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	60 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	100	1.27 mm	70 Cel	32KX8	32K	0 Cel	NO	TIN LEAD	QUAD	R-PQCC-J32	3	5.5 V	3.55 mm	1000000 Write/Erase Cycles		11.43 mm	Not Qualified	5 ms		262144 bit	4.5 V	100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION	128	e0	.0005 Amp	13.97 mm	150 ns	5	YES
X28HC256JI-90T1	Intersil	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	60 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	100	1.27 mm	85 Cel	32KX8	32K	-40 Cel	NO	TIN LEAD	QUAD	R-PQCC-J32	3	5.5 V	3.55 mm	1000000 Write/Erase Cycles		11.43 mm	Not Qualified	5 ms		262144 bit	4.5 V	100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION	128	e0	.0005 Amp	13.97 mm	90 ns	5	YES
X28HC256J-12T1	Intersil	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	60 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	100	1.27 mm	70 Cel	32KX8	32K	0 Cel	NO	TIN LEAD	QUAD	R-PQCC-J32	3	5.5 V	3.55 mm	1000000 Write/Erase Cycles		11.43 mm	Not Qualified	5 ms		262144 bit	4.5 V	100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION	128	e0	.0005 Amp	13.97 mm	120 ns	5	YES
X28HC256J-90	Intersil	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	60 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	100	1.27 mm	70 Cel	32KX8	32K	0 Cel	NO	TIN LEAD	QUAD	R-PQCC-J32	3	5.5 V	3.55 mm	1000000 Write/Erase Cycles		11.43 mm	Not Qualified	5 ms		262144 bit	4.5 V	100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION	128	e0	.0005 Amp	13.97 mm	90 ns	5	YES
X28HC64P-12	Intersil	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs	100	2.54 mm	70 Cel	8KX8	8K	0 Cel	NO	TIN LEAD	DUAL	R-PDIP-T28		5.5 V	6.35 mm	1000000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		65536 bit	4.5 V	SOFTWARE DATA PROTECTION; 64 BYTE PAGE WRITE; 100 YEARS DATA RETENTION	64	e0	.0002 Amp	37.4 mm	120 ns	5	YES
X24C16PM-3	Intersil	EEPROM	MILITARY	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		2048 words	3.3			8	IN-LINE				2.54 mm	125 Cel	2KX8	2K	-55 Cel			DUAL	R-PDIP-T8		5.5 V	5.33 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	16384 bit	3 V					9.585 mm
X24C16PMB-2.7	Intersil	EEPROM	MILITARY	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	SERIAL	SYNCHRONOUS		2048 words	3.3			8	IN-LINE				2.54 mm	125 Cel	2KX8	2K	-55 Cel			DUAL	R-PDIP-T8		5.5 V	5.33 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	16384 bit	2.7 V					9.585 mm
X24C16PMB-3.5	Intersil	EEPROM	MILITARY	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	SERIAL	SYNCHRONOUS		2048 words	5			8	IN-LINE				2.54 mm	125 Cel	2KX8	2K	-55 Cel			DUAL	R-PDIP-T8		5.5 V	5.33 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	16384 bit	3.5 V					9.585 mm
X28HC256JI-12T1	Intersil	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	60 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	100	1.27 mm	85 Cel	32KX8	32K	-40 Cel	NO	TIN LEAD	QUAD	R-PQCC-J32	3	5.5 V	3.55 mm	1000000 Write/Erase Cycles		11.43 mm	Not Qualified	5 ms		262144 bit	4.5 V	100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION	128	e0	.0005 Amp	13.97 mm	120 ns	5	YES
X28HC256SI-12T1	Intersil	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	32768 words	5	YES	5	8	SMALL OUTLINE	SOP28,.4	EEPROMs	100	1.27 mm	85 Cel	32KX8	32K	-40 Cel	NO	TIN LEAD	DUAL	R-PDSO-G28	1	5.5 V	2.65 mm	1000000 Write/Erase Cycles		7.5 mm	Not Qualified	5 ms		262144 bit	4.5 V	100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION	128	e0	.0005 Amp	17.9 mm	120 ns	5	YES
X24C16PM	Intersil	EEPROM	MILITARY	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		2048 words	5			8	IN-LINE				2.54 mm	125 Cel	2KX8	2K	-55 Cel			DUAL	R-PDIP-T8		5.5 V	5.33 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	16384 bit	4.5 V					9.585 mm
X24C16PM-2.7	Intersil	EEPROM	MILITARY	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		2048 words	3.3			8	IN-LINE				2.54 mm	125 Cel	2KX8	2K	-55 Cel			DUAL	R-PDIP-T8		5.5 V	5.33 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	16384 bit	2.7 V					9.585 mm
X24C16PM-3.5	Intersil	EEPROM	MILITARY	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		2048 words	5			8	IN-LINE				2.54 mm	125 Cel	2KX8	2K	-55 Cel			DUAL	R-PDIP-T8		5.5 V	5.33 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	16384 bit	3.5 V					9.585 mm
X24C16PMB	Intersil	EEPROM	MILITARY	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	SERIAL	SYNCHRONOUS		2048 words	5			8	IN-LINE				2.54 mm	125 Cel	2KX8	2K	-55 Cel			DUAL	R-PDIP-T8		5.5 V	5.33 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	16384 bit	4.5 V					9.585 mm
X24C16PMB-3	Intersil	EEPROM	MILITARY	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	SERIAL	SYNCHRONOUS		2048 words	3.3			8	IN-LINE				2.54 mm	125 Cel	2KX8	2K	-55 Cel			DUAL	R-PDIP-T8		5.5 V	5.33 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	16384 bit	3 V					9.585 mm
X28HC256FI-90	Intersil	EEPROM	INDUSTRIAL	28	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS	60 mA	32768 words	5	YES	5	8	FLATPACK	FL28,.4	EEPROMs	100	1.27 mm	85 Cel	32KX8	32K	-40 Cel	NO	TIN LEAD	DUAL	R-CDFP-F28		5.5 V	2.92 mm	1000000 Write/Erase Cycles		12.445 mm	Not Qualified	5 ms		262144 bit	4.5 V	100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION	128	e0	.0005 Amp		90 ns	5	YES
X28HC256PI-12	Intersil	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	32768 words	5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs	100	2.54 mm	85 Cel	32KX8	32K	-40 Cel	NO	TIN LEAD	DUAL	R-PDIP-T28		5.5 V	6.35 mm	1000000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		262144 bit	4.5 V	100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION	128	e0	.0005 Amp	37.4 mm	120 ns	5	YES
X28HC64PI-90	Intersil	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs	100	2.54 mm	85 Cel	8KX8	8K	-40 Cel	NO	TIN LEAD	DUAL	R-PDIP-T28		5.5 V	6.35 mm	1000000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		65536 bit	4.5 V	SOFTWARE DATA PROTECTION; 64 BYTE PAGE WRITE; 100 YEARS DATA RETENTION	64	e0	.0002 Amp	37.4 mm	90 ns	5	YES

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.