Onsemi EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
CAT64LC10UI-TE13	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	64 words	3.3	3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	85 Cel		64X16	64	-40 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		6 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	10 ms	SPI	1024 bit	2.5 V		e0			.000003 Amp	4.4 mm
CAT93C57WE-1.8	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	5	2/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	125 Cel		128X16	128	-40 Cel	MATTE TIN		DUAL	SOFTWARE	R-PDSO-G8		6 V	1.75 mm	1000000 Write/Erase Cycles	.25 MHz	3.9 mm	Not Qualified		MICROWIRE	2048 bit	1.8 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION	e3			.00001 Amp	4.9 mm
CAT93C66ZD4	Onsemi	EEPROM	COMMERCIAL	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		256 words	5		16	SMALL OUTLINE		8				70 Cel		256X16	256	0 Cel	MATTE TIN		DUAL		S-XDSO-N8	1	6 V			.5 MHz		Not Qualified		MICROWIRE	4096 bit	2.5 V		e3
CAT93C86BLE-G	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		1024 words	5		16	IN-LINE		8			2.54 mm	125 Cel		1KX16	1K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL		R-PDIP-T8		5.5 V	5.33 mm		4 MHz	7.62 mm			MICROWIRE	16384 bit	1.8 V		e4	NOT SPECIFIED	NOT SPECIFIED		9.27 mm
CAT140081LWI-G	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		1 mA	1024 words		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel		1KX8	1K	-40 Cel		1010DMMR	DUAL	SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	8192 bit						.000017 Amp
CAT93C66YE-1.8-T2E	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	5	2/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	8	EEPROMs	100	.65 mm	125 Cel		256X16	256	-40 Cel	MATTE TIN		DUAL	SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified		MICROWIRE	4096 bit	4.5 V	IT ALSO OPERATES AT 0.25MHZ AT 1.8MIN	e3			.00001 Amp	4.4 mm
CAT93C66ZD4E-GE	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	256 words	5	3/5	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,25	8	EEPROMs	100	.65 mm	125 Cel		256X16	256	-40 Cel	MATTE TIN		DUAL	SOFTWARE	S-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified		MICROWIRE	4096 bit	4.5 V	IT ALSO OPERATES AT 0.5MHZ AT 2.5MIN	e3			.00001 Amp	3 mm
CAT93C56VI-1.8	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	5	2/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	85 Cel		128X16	128	-40 Cel	MATTE TIN		DUAL	SOFTWARE	R-PDSO-G8		6 V	1.75 mm	1000000 Write/Erase Cycles	.25 MHz	3.9 mm	Not Qualified		MICROWIRE	2048 bit	1.8 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION	e3			.00001 Amp	4.9 mm
CAT93C76RD4-1.8TE13REVA	Onsemi	EEPROM	COMMERCIAL	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		512 words	5		16	SMALL OUTLINE		8				70 Cel		512X16	512	0 Cel	TIN LEAD		DUAL		S-XDSO-N8	1	5.5 V			1 MHz		Not Qualified		MICROWIRE	8192 bit	1.8 V		e0
CAT140089TWI-G	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		1 mA	1024 words		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel		1KX8	1K	-40 Cel		1010DMMR	DUAL	SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	8192 bit						.000017 Amp
CAT64LC40UR	Onsemi	EEPROM	COMMERCIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	256 words		3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.635 mm	70 Cel		256X16	256	0 Cel			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		SPI	4096 bit						.000003 Amp
CAT93C57VE-1.8-T3E	Onsemi	EEPROM CARD	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	5	2/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	125 Cel		128X16	128	-40 Cel	MATTE TIN		DUAL	SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified		MICROWIRE	2048 bit	4.5 V	IT ALSO OPERATES AT 0.25MHZ AT 1.8MIN	e3			.00001 Amp	4.9 mm		2.7
CAT93C57WE-1.8-T2E	Onsemi	EEPROM CARD	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	5	2/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	125 Cel		128X16	128	-40 Cel	MATTE TIN		DUAL	SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified		MICROWIRE	2048 bit	4.5 V	IT ALSO OPERATES AT 0.25MHZ AT 1.8MIN	e3			.00001 Amp	4.9 mm		2.7
CAT93C66VI-1.8-GT3E	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	5	2/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	85 Cel		256X16	256	-40 Cel	MATTE TIN		DUAL	SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified		MICROWIRE	4096 bit	4.5 V	IT ALSO OPERATES AT 0.25MHZ AT 1.8MIN	e3			.00001 Amp	4.9 mm
CAT93C86YE-TE13REVC	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1024 words	5		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.65 mm	125 Cel		1KX16	1K	-40 Cel	MATTE TIN		DUAL		R-PDSO-G8	1	6 V	1.1 mm		1 MHz	3 mm	Not Qualified		MICROWIRE	16384 bit	2.5 V		e3				4.4 mm
CAT93C86BZE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1024 words	5		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.65 mm	125 Cel		1KX16	1K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL		S-PDSO-G8	1	5.5 V	1.1 mm		4 MHz	3 mm			MICROWIRE	16384 bit	1.8 V		e4				3 mm
CAT150089RWI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	8192 words	3	3/5	1	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel		8KX1	8K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm	Not Qualified	5 ms	SPI	8192 bit	2.5 V		e4			.00002 Amp	4.9 mm
CAT64LC10LI	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	64 words	3	3/5	16	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	85 Cel		64X16	64	-40 Cel	MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		6 V	4.57 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	SPI	1024 bit	2.5 V		e3			.000003 Amp	9.59 mm
CAT93C66YE-GT3REVE	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		256 words	5		16	SMALL OUTLINE		8		100	.65 mm	125 Cel		256X16	256	-40 Cel	NICKEL PALLADIUM GOLD		DUAL		R-PDSO-G8		5.5 V	1.2 mm		.5 MHz	3 mm	Not Qualified		MICROWIRE	4096 bit	2.5 V	100 YEAR DATA RETENTION	e4				4.4 mm
CAT93C86V-1.8	Onsemi	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1024 words	5		16	SMALL OUTLINE		8		100	1.27 mm	70 Cel		1KX16	1K	0 Cel	MATTE TIN		DUAL		R-PDSO-G8		6 V	1.75 mm		.5 MHz	3.9 mm	Not Qualified		MICROWIRE	16384 bit	1.8 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION	e3				4.9 mm
CAT1027LI-28-G	Onsemi	EEPROM																													NICKEL PALLADIUM GOLD																			260
CAT34RC02VP2I-TE13	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	256 words	3	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	100	.5 mm	85 Cel		256X8	256	-40 Cel	TIN	1010DDDR	DUAL	HARDWARE/SOFTWARE	R-XDSO-N8		5.5 V	.8 mm	1000000 Write/Erase Cycles	.1 MHz	2 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V		e3			.000001 Amp	3 mm
CAT93C57JI-1.8TE13REVE	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		131072 words	3		16	SMALL OUTLINE		8			1.27 mm	85 Cel		128KX16	128K	-40 Cel	TIN LEAD		DUAL		R-PDSO-G8		6 V	1.75 mm		.25 MHz	3.9 mm	Not Qualified		MICROWIRE	2097152 bit	1.8 V		e0				4.9 mm
CAT93C86ZD4I-1.8T2REVC	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		1024 words	5		16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		8			.65 mm	85 Cel		1KX16	1K	-40 Cel	MATTE TIN		DUAL		S-XDSO-N8	1	5.5 V	.8 mm		.5 MHz	3 mm	Not Qualified		MICROWIRE	16384 bit	1.8 V		e3				3 mm
CAT93C46RWI-GT2	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	64 words	5	2/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	85 Cel		64X16	64	-40 Cel	NICKEL PALLADIUM GOLD		DUAL	SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified		MICROWIRE	1024 bit	1.8 V		e4			.00001 Amp	4.9 mm
CAT93C76KA-1.8TE13REVA	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		512 words	5		16	SMALL OUTLINE		8			1.27 mm	105 Cel		512X16	512	-40 Cel	TIN LEAD		DUAL		R-PDSO-G8		5.5 V	2.03 mm		1 MHz	5.25 mm	Not Qualified		MICROWIRE	8192 bit	1.8 V		e0				5.3 mm
CAT93C86ZD4E-1.8T2C	Onsemi	EEPROM	AUTOMOTIVE	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		NO LEAD	SERIAL		3 mA	1024 words		2/5	16	SMALL OUTLINE	SOLCC8,.12,25	8	EEPROMs	100	.635 mm	125 Cel		1KX16	1K	-40 Cel			DUAL	HARDWARE/SOFTWARE	R-PDSO-N8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	16384 bit						.00001 Amp
CAT64LC40WATE13	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	4.5	3/5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	105 Cel		256X16	256	-40 Cel	MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		6 V		1000000 Write/Erase Cycles	1 MHz		Not Qualified	10 ms	SPI	4096 bit	2.5 V		e3			.000003 Amp
CAT93C56ZD4I-E	Onsemi	EEPROM CARD	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	128 words	5	3/5	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,25	8	EEPROMs	100	.65 mm	85 Cel		128X16	128	-40 Cel	MATTE TIN		DUAL	SOFTWARE	S-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	4.5 V	IT ALSO OPERATES AT 0.5MHZ AT 2.5MIN	e3			.00001 Amp	3 mm		2.7
CAT93C66VA-1.8TE13	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		256 words	5		16	SMALL OUTLINE		8		100	1.27 mm	105 Cel		256X16	256	-40 Cel	MATTE TIN		DUAL		R-PDSO-G8		6 V	1.75 mm		.25 MHz	3.9 mm	Not Qualified		MICROWIRE	4096 bit	1.8 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION	e3				4.9 mm
CAT93C86ZD4E-1.8-T2	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	1024 words	5	2/5	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,25	8	EEPROMs	100	.65 mm	125 Cel		1KX16	1K	-40 Cel	MATTE TIN		DUAL	HARDWARE/SOFTWARE	S-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	3 MHz	3 mm	Not Qualified		MICROWIRE	16384 bit	4.5 V	IT ALSO OPERATES AT 0.5MHZ AT 1.8MIN	e3			.00001 Amp	3 mm
CAT93C56WI-1.8-GE	Onsemi	EEPROM CARD	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	5	2/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	85 Cel		128X16	128	-40 Cel	MATTE TIN		DUAL	SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified		MICROWIRE	2048 bit	4.5 V	IT ALSO OPERATES AT 0.25MHZ AT 1.8MIN	e3			.00001 Amp	4.9 mm		2.7
CAT93C57WE-1.8-GREVE	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words	5		16	SMALL OUTLINE		8			1.27 mm	125 Cel		128X16	128	-40 Cel	NICKEL PALLADIUM GOLD		DUAL		R-PDSO-G8		5.5 V	1.75 mm		.5 MHz	3.9 mm	Not Qualified		MICROWIRE	2048 bit	1.8 V		e4	40	260		4.9 mm
CAT64LC10YR-TE13	Onsemi	EEPROM	COMMERCIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	64 words	3	3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	70 Cel		64X16	64	0 Cel	MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		6 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	10 ms	SPI	1024 bit	2.5 V		e3			.000003 Amp	4.4 mm
CAT93C56WA-GE	Onsemi	EEPROM CARD	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	5	3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	105 Cel		128X16	128	-40 Cel	MATTE TIN		DUAL	SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified		MICROWIRE	2048 bit	4.5 V	IT ALSO OPERATES AT 0.5MHZ AT 2.5MIN	e3			.00001 Amp	4.9 mm		2.7
CAT93C56VE-T3REVE	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words	5		16	SMALL OUTLINE		8			1.27 mm	125 Cel		128X16	128	-40 Cel	MATTE TIN		DUAL		R-PDSO-G8		5.5 V	1.75 mm		.5 MHz	3.9 mm	Not Qualified		MICROWIRE	2048 bit	2.5 V		e3				4.9 mm
CAT93C57WE-T2	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	128 words		3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	125 Cel		128X16	128	-40 Cel	MATTE TIN		DUAL	SOFTWARE	R-PDSO-G8	1			1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	2048 bit			e3			.00001 Amp
CAT140041ZWI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	4096 words	2.5	3/5	1	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel		4KX1	4K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDMR	DUAL	SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	4096 bit	2.25 V		e4			.000017 Amp	4.9 mm		3
CAT93C86UA-1.8	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1024 words	5		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		100	.65 mm	105 Cel		1KX16	1K	-40 Cel	TIN LEAD		DUAL		R-PDSO-G8	1	6 V	1.2 mm		.5 MHz	3 mm	Not Qualified		MICROWIRE	16384 bit	1.8 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION	e0				4.4 mm
CAT93C86VE-T3REVC	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1024 words	5		16	SMALL OUTLINE		8			1.27 mm	125 Cel		1KX16	1K	-40 Cel	MATTE TIN		DUAL		R-PDSO-G8		5.5 V	1.75 mm		1 MHz	3.9 mm	Not Qualified		MICROWIRE	16384 bit	2.5 V		e3				4.9 mm
CAT93C76RD4-TE13REVA	Onsemi	EEPROM	COMMERCIAL	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		512 words	5		16	SMALL OUTLINE		8				70 Cel		512X16	512	0 Cel	TIN LEAD		DUAL		S-XDSO-N8	1	5.5 V			3 MHz		Not Qualified		MICROWIRE	8192 bit	2.5 V		e0
CAT64LC40YA	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	256 words		3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.635 mm	105 Cel		256X16	256	-40 Cel			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		SPI	4096 bit						.000003 Amp
CAT150041LWI-G	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		2 mA	512 words	5	5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel		512X8	512	-40 Cel			DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		SPI	4096 bit						.00002 Amp
CAT130169SWI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	1024 words		3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	85 Cel		1KX16	1K	-40 Cel			DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	16384 bit
CAT64LC20UI-TE13	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	3.3	3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	85 Cel		128X16	128	-40 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		6 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	10 ms	SPI	2048 bit	2.5 V		e0			.000003 Amp	4.4 mm
NV34C02WF	Onsemi	EEPROM	AUTOMOTIVE	8	HUSSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	256 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, ULTRA THIN PROFILE, SHRINK PITCH	SOLCC8,.11,20			100	.5 mm	125 Cel	NO	256X8	256	-40 Cel		1010DDDR	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		5.5 V	.55 mm	2000000 Write/Erase Cycles	400 MHz	2 mm		5 ms	I2C	2048 bit	1.7 V					.000001 Amp	3 mm	900 ns
CAT93C66LE-1.8	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	256 words	5	2/5	16	IN-LINE	DIP8,.3	8	EEPROMs	100	2.54 mm	125 Cel		256X16	256	-40 Cel	MATTE TIN		DUAL	SOFTWARE	R-PDIP-T8		6 V	4.57 mm	1000000 Write/Erase Cycles	.25 MHz	7.62 mm	Not Qualified		MICROWIRE	4096 bit	1.8 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION	e3			.00001 Amp	9.36 mm
CAT93C56YE-1.8T2REVE	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words	5		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.65 mm	125 Cel		128X16	128	-40 Cel	MATTE TIN		DUAL		R-PDSO-G8		5.5 V	1.2 mm		.25 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	1.8 V		e3				4.4 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.