Onsemi EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Programming Voltage (V)
CAT93C57XI-T2REVE	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words	5		16	SMALL OUTLINE		8			1.27 mm	85 Cel		128X16	128	-40 Cel	MATTE TIN		DUAL		R-PDSO-G8		5.5 V	2.03 mm		.5 MHz	5.23 mm	Not Qualified		MICROWIRE	2048 bit	2.5 V		e3				5.255 mm
CAT93C86WA-1.8-T2	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words	5	2/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	105 Cel		1KX16	1K	-40 Cel	MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	3 MHz	3.9 mm	Not Qualified		MICROWIRE	16384 bit	4.5 V	IT ALSO OPERATES AT 0.5MHZ AT 1.8MIN	e3			.00001 Amp	4.9 mm
CAT130089TWI-G	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	512 words		3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	85 Cel		512X16	512	-40 Cel			DUAL	SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	8192 bit						.00002 Amp
CAT64LC10JI-TE13	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	64 words	3.3	3/5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel	3-STATE	64X16	64	-40 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		6 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	SPI	1024 bit	2.5 V	SPI BUS SERIAL INTERFACE; AUTOMATIC WRITE	e0			.000003 Amp	4.9 mm
CAT93C76WE-TE13REVA	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		512 words	5		16	SMALL OUTLINE		8			1.27 mm	125 Cel		512X16	512	-40 Cel	MATTE TIN		DUAL		R-PDSO-G8		5.5 V	1.75 mm		3 MHz	3.9 mm	Not Qualified		MICROWIRE	8192 bit	2.5 V		e3				4.9 mm
NV24C04MUW3VTBG	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	4096 words	3.3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20			100	.5 mm	125 Cel	OPEN-DRAIN	4KX1	4K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDMR	DUAL	HARDWARE	R-PDSO-N8	1	5.5 V	.55 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm		4 ms	I2C	4096 bit	2.5 V		e4	30	260		3 mm
CAT150081JWI-G	Onsemi	EEPROM CARD	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	8192 words	5	3/5	1	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel		8KX1	8K	-40 Cel	MATTE TIN		DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm	Not Qualified	5 ms	SPI	8192 bit	2.5 V		e3			.00002 Amp	4.9 mm	2.7
CAT93C57XE-1.8-E	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	128 words		2/5	16	SMALL OUTLINE	SOP8,.3	8	EEPROMs	100	1.27 mm	125 Cel		128X16	128	-40 Cel			DUAL	SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	2048 bit						.00001 Amp
CAT93C56XA-GT2	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	5	3/5	16	SMALL OUTLINE	SOP8,.3	8	EEPROMs	100	1.27 mm	105 Cel		128X16	128	-40 Cel			DUAL	SOFTWARE	R-PDSO-G8		5.5 V		1000000 Write/Erase Cycles	1 MHz		Not Qualified	10 ms	MICROWIRE	2048 bit	4.5 V	Also operates at 1.8V and 2.5V				.00001 Amp
CAT93C56RD4A-TE13	Onsemi	EEPROM	INDUSTRIAL	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		128 words	5		16	SMALL OUTLINE		8				105 Cel		128X16	128	-40 Cel	TIN LEAD		DUAL		S-XDSO-N8	1	6 V			.5 MHz		Not Qualified		MICROWIRE	2048 bit	2.5 V		e0
CAT93C57XI-1.8REVE	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		131072 words	3		16	SMALL OUTLINE		8			1.27 mm	85 Cel		128KX16	128K	-40 Cel	MATTE TIN		DUAL		R-PDSO-G8		6 V	2.03 mm		.25 MHz	5.25 mm	Not Qualified		MICROWIRE	2097152 bit	1.8 V		e3				5.3 mm
CAT93C57LE-1.8-GE	Onsemi	EEPROM CARD	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	128 words	5	2/5	16	IN-LINE	DIP8,.3	8	EEPROMs	100	2.54 mm	125 Cel		128X16	128	-40 Cel	MATTE TIN		DUAL	SOFTWARE	R-PDIP-T8	1	5.5 V	5.33 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified		MICROWIRE	2048 bit	4.5 V	IT ALSO OPERATES AT 0.25MHZ AT 1.8MIN	e3			.00001 Amp	9.27 mm	2.7
CAT93C56ZD4E-G	Onsemi	EEPROM	AUTOMOTIVE	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		NO LEAD	SERIAL		3 mA	128 words		3/5	16	SMALL OUTLINE	SOLCC8,.12,25	8	EEPROMs	100	.635 mm	125 Cel		128X16	128	-40 Cel	MATTE TIN		DUAL	SOFTWARE	R-PDSO-N8	1			1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	2048 bit			e3			.00001 Amp
CAT93C57ZD4A-GT2E	Onsemi	EEPROM CARD	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	128 words	5	3/5	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,25	8	EEPROMs	100	.65 mm	105 Cel		128X16	128	-40 Cel	MATTE TIN		DUAL	SOFTWARE	S-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	4.5 V	IT ALSO OPERATES AT 0.5MHZ AT 2.5MIN	e3			.00001 Amp	3 mm	2.7
CAT93C86WA-T3C	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	1024 words		3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	105 Cel		1KX16	1K	-40 Cel			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	16384 bit						.00001 Amp
CAT93C66LI-1.8-G	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	SERIAL		3 mA	256 words		2/5	16	IN-LINE	DIP8,.3	8	EEPROMs	100	2.54 mm	85 Cel		256X16	256	-40 Cel			DUAL	SOFTWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	4096 bit						.00001 Amp
CAT93C76PE-REVA	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		512 words	5		16	IN-LINE		8			2.54 mm	125 Cel		512X16	512	-40 Cel	TIN LEAD		DUAL		R-PDIP-T8		5.5 V	4.57 mm		1 MHz	7.62 mm	Not Qualified		MICROWIRE	8192 bit	1.8 V		e0				9.59 mm
CAT93C57V-2.5TE7	Onsemi	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		256 words			8	SMALL OUTLINE		16			1.27 mm	70 Cel		256X8	256	0 Cel	MATTE TIN		DUAL		R-PDSO-G8		6 V	1.75 mm		.5 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	2.5 V	MICROWIRE BUS SERIAL INTERFACE; AUTOMATIC WRITE	e3				4.9 mm
CAT64LC10V-TE13	Onsemi	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	64 words	3	3/5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	70 Cel		64X16	64	0 Cel	MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		6 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	SPI	1024 bit	2.5 V		e3			.000003 Amp	4.9 mm
CAT93C76VE-T2	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		512 words	5		16	SMALL OUTLINE		8			1.27 mm	125 Cel		512X16	512	-40 Cel	MATTE TIN		DUAL		R-PDSO-G8		5.5 V	1.75 mm		1 MHz	3.9 mm	Not Qualified		MICROWIRE	8192 bit	1.8 V		e3	40	260		4.9 mm
CAT93C56VA-1.8T3REVE	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words	5		16	SMALL OUTLINE		8			1.27 mm	105 Cel		128X16	128	-40 Cel	MATTE TIN		DUAL		R-PDSO-G8		5.5 V	1.75 mm		.25 MHz	3.9 mm	Not Qualified		MICROWIRE	2048 bit	1.8 V		e3				4.9 mm
CAT93C66YE-1.8-GT2E	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	5	2/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	8	EEPROMs	100	.65 mm	125 Cel		256X16	256	-40 Cel	MATTE TIN		DUAL	SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified		MICROWIRE	4096 bit	4.5 V	IT ALSO OPERATES AT 0.25MHZ AT 1.8MIN	e3			.00001 Amp	4.4 mm
CAT93C66AKI-2.7TE13	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		256 words			16	SMALL OUTLINE					1.27 mm	85 Cel		256X16	256	-40 Cel	TIN LEAD		DUAL		R-PDSO-G8		6 V	2.03 mm		.5 MHz	5.25 mm	Not Qualified	10 ms	MICROWIRE	4096 bit	2.7 V	MICROWIRE BUS SERIAL INTERFACE; AUTOMATIC WRITE	e0				5.3 mm
CAT150021JWI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	2048 words	5	5	1	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel		2KX1	2K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm	Not Qualified	5 ms	SPI	2048 bit	2.5 V		e4			.00002 Amp	4.9 mm
CAT93C57X-2.7TE7	Onsemi	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		256 words			8	SMALL OUTLINE		16			1.27 mm	70 Cel		256X8	256	0 Cel	MATTE TIN		DUAL		R-PDSO-G8		6 V	2.03 mm		.5 MHz	5.25 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	2.7 V	MICROWIRE BUS SERIAL INTERFACE; AUTOMATIC WRITE	e3				5.3 mm
CAT93C57Y-1.8	Onsemi	EEPROM	COMMERCIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words	5		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		100	.65 mm	70 Cel		128X16	128	0 Cel	MATTE TIN		DUAL		R-PDSO-G8	1	6 V	1.1 mm		.25 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	1.8 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION	e3				4.4 mm
CAT93C66AJ-TE7	Onsemi	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		256 words	5		16	SMALL OUTLINE					1.27 mm	70 Cel		256X16	256	0 Cel	TIN LEAD		DUAL		R-PDSO-G8		5.5 V	1.75 mm		1 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	4096 bit	4.5 V	MICROWIRE BUS SERIAL INTERFACE; AUTOMATIC WRITE	e0				4.9 mm
CAT93C66YE-1.8-T3	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	256 words		2/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	8	EEPROMs	100	.635 mm	125 Cel		256X16	256	-40 Cel			DUAL	SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	4096 bit						.00001 Amp
CAT93C66ZD4-1.8	Onsemi	EEPROM	COMMERCIAL	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		256 words	5		16	SMALL OUTLINE		8				70 Cel		256X16	256	0 Cel	MATTE TIN		DUAL		S-XDSO-N8	1	6 V			.25 MHz		Not Qualified		MICROWIRE	4096 bit	1.8 V		e3
CAT93C46RVP2I-GT2	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	1 mA	64 words	5	2/5	16	SMALL OUTLINE	SOLCC8,.11,20	8	EEPROMs	100	.5 mm	85 Cel		64X16	64	-40 Cel	NICKEL PALLADIUM GOLD		DUAL	SOFTWARE	R-PDSO-N8		5.5 V	.8 mm	1000000 Write/Erase Cycles	2 MHz	2 mm	Not Qualified		MICROWIRE	1024 bit	1.8 V		e4			.00001 Amp	3 mm
CAT93C86VA-T2C	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	1024 words		3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	105 Cel		1KX16	1K	-40 Cel			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	16384 bit						.00001 Amp
CAT93C86KE-1.8TE13	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1024 words	5		16	SMALL OUTLINE		8		100	1.27 mm	125 Cel		1KX16	1K	-40 Cel	TIN LEAD		DUAL		R-PDSO-G8		6 V	2.03 mm		.5 MHz	5.25 mm	Not Qualified		MICROWIRE	16384 bit	1.8 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION	e0				5.3 mm
CAT93C56Y-1.8	Onsemi	EEPROM	COMMERCIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words	5		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		100	.65 mm	70 Cel		128X16	128	0 Cel	MATTE TIN		DUAL		R-PDSO-G8	1	6 V	1.1 mm		.25 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	1.8 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION	e3				4.4 mm
CAT93C57PI-2.7	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words			8	IN-LINE		16			2.54 mm	85 Cel		256X8	256	-40 Cel	TIN LEAD		DUAL		R-PDIP-T8		6 V	4.57 mm		.5 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	2.7 V	MICROWIRE BUS SERIAL INTERFACE; AUTOMATIC WRITE	e0				9.27 mm
CAT93C56SA-1.8TE13	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words	5		16	SMALL OUTLINE		8		100	1.27 mm	105 Cel		128X16	128	-40 Cel	TIN LEAD		DUAL		R-PDSO-G8		6 V	1.75 mm		.25 MHz	3.9 mm	Not Qualified		MICROWIRE	2048 bit	1.8 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION	e0	30	240		4.9 mm
CAT93C56AKI-2.7TE13	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words			16	SMALL OUTLINE					1.27 mm	85 Cel		128X16	128	-40 Cel	TIN LEAD		DUAL		R-PDSO-G8		6 V	2.03 mm		.5 MHz	5.25 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	2.7 V	MICROWIRE BUS SERIAL INTERFACE; AUTOMATIC WRITE	e0				5.3 mm
CAT64LC10S-TE13	Onsemi	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	64 words	3.3	3/5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	70 Cel	3-STATE	64X16	64	0 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		6 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	SPI	1024 bit	2.5 V	SPI BUS SERIAL INTERFACE; AUTOMATIC WRITE	e0			.000003 Amp	4.9 mm
CAT93C66LEREVE	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words	5		16	IN-LINE		8		100	2.54 mm	125 Cel		256X16	256	-40 Cel	MATTE TIN		DUAL		R-PDIP-T8		5.5 V	5.33 mm		.5 MHz	7.62 mm	Not Qualified		MICROWIRE	4096 bit	2.5 V	100 YEAR DATA RETENTION	e3				9.27 mm
CAT93C56WE-1.8T2REVE	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words	5		16	SMALL OUTLINE		8			1.27 mm	125 Cel		128X16	128	-40 Cel	MATTE TIN		DUAL		R-PDSO-G8		5.5 V	1.75 mm		.25 MHz	3.9 mm	Not Qualified		MICROWIRE	2048 bit	1.8 V		e3				4.9 mm
LE25CB1282M	Onsemi	EEPROM	INDUSTRIAL	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16384 words			8	SMALL OUTLINE, LOW PROFILE					1.27 mm	85 Cel		16KX8	16K	-40 Cel			DUAL		R-PDSO-G8		5.5 V	1.7 mm		5 MHz	4.4 mm	Not Qualified	5 ms	SPI	131072 bit	2.7 V						5 mm
CAT93C66VI-1.8-E	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	5	2/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	85 Cel		256X16	256	-40 Cel	MATTE TIN		DUAL	SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified		MICROWIRE	4096 bit	4.5 V	IT ALSO OPERATES AT 0.25MHZ AT 1.8MIN	e3			.00001 Amp	4.9 mm
CAT93C66WA-GE	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	5	3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	105 Cel		256X16	256	-40 Cel	MATTE TIN		DUAL	SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified		MICROWIRE	4096 bit	4.5 V	IT ALSO OPERATES AT 0.5MHZ AT 2.5MIN	e3			.00001 Amp	4.9 mm
CAT93C66YA-1.8-GT2REVE	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		256 words	5		16	SMALL OUTLINE		8		100	.65 mm	105 Cel		256X16	256	-40 Cel	NICKEL PALLADIUM GOLD		DUAL		R-PDSO-G8		5.5 V	1.2 mm		.25 MHz	3 mm	Not Qualified		MICROWIRE	4096 bit	1.8 V	100 YEAR DATA RETENTION	e4				4.4 mm
CAT93C86S-1.8	Onsemi	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1024 words	5		16	SMALL OUTLINE		8		100	1.27 mm	70 Cel		1KX16	1K	0 Cel	TIN LEAD		DUAL		R-PDSO-G8		6 V	1.75 mm		.5 MHz	3.9 mm	Not Qualified		MICROWIRE	16384 bit	1.8 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION	e0				4.9 mm
CAT93C56XI	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	5	3/5	16	SMALL OUTLINE	SOP8,.3	8	EEPROMs	100	1.27 mm	85 Cel		128X16	128	-40 Cel	TIN		DUAL	SOFTWARE	R-PDSO-G8	3	6 V	2.03 mm	1000000 Write/Erase Cycles	.5 MHz	5.25 mm	Not Qualified		MICROWIRE	2048 bit	2.5 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION	e3		260	.00001 Amp	5.3 mm
CAT93C56AS-1.8TE13	Onsemi	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words	5		16	SMALL OUTLINE					1.27 mm	70 Cel		128X16	128	0 Cel	TIN LEAD		DUAL		R-PDSO-G8		6 V	1.75 mm		.25 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	1.8 V	MICROWIRE BUS SERIAL INTERFACE; AUTOMATIC WRITE	e0				4.9 mm
CAT93C57UA-1.8TE13REVE	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		131072 words	3		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.65 mm	105 Cel		128KX16	128K	-40 Cel	TIN LEAD		DUAL		R-PDSO-G8	1	6 V	1.2 mm		.25 MHz	3 mm	Not Qualified		MICROWIRE	2097152 bit	1.8 V		e0				4.4 mm
CAT93C86RD4E-1.8REVC	Onsemi	EEPROM	AUTOMOTIVE	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		1024 words	5		16	SMALL OUTLINE		8				125 Cel		1KX16	1K	-40 Cel	TIN LEAD		DUAL		S-XDSO-N8	1	6 V			.5 MHz		Not Qualified		MICROWIRE	16384 bit	1.8 V		e0

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.