ROHM EEPROM 140

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Programming Voltage (V)
BR24G04NUX-3TTR	ROHM	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	2 mA	512 words	2.5	1.8/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20	EEPROMs	40	.5 mm	85 Cel		512X8	512	-40 Cel		1010DDMR	DUAL	HARDWARE	R-PDSO-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	4096 bit	1.6 V			NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	3 mm
BR93H56RF-2CE2	ROHM	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	4	3/5	16	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	125 Cel		128X16	128	-40 Cel			DUAL	SOFTWARE	R-PDSO-G8		5.5 V	1.71 mm	1000000 Write/Erase Cycles	2 MHz	4.4 mm	Not Qualified	4 ms	MICROWIRE	2048 bit	2.5 V	SEATED HT-CALCULATED		NOT SPECIFIED	NOT SPECIFIED	.00001 Amp	5 mm
BR24G02FJ-3GTE2	ROHM	EEPROM	INDUSTRIAL	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words	2.5		8	SMALL OUTLINE, LOW PROFILE	SOP8,.25		40	1.27 mm	85 Cel	3-STATE	256X8	256	-40 Cel	TIN COPPER	1010DDDR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.65 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm		5 ms	I2C	2048 bit	1.6 V	SEATED HT-CALCULATED	e2	10	260	.000002 Amp	4.9 mm	2.5
BR24G64FJ-3AGTE2	ROHM	EEPROM	INDUSTRIAL	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		8192 words			8	SMALL OUTLINE, LOW PROFILE				1.27 mm	85 Cel		8KX8	8K	-40 Cel			DUAL		R-PDSO-G8		5.5 V	1.65 mm		1 MHz	3.9 mm		5 ms	I2C	65536 bit	1.7 V	SEATED HT-CALCULATED, ALSO GIVEN 1.6V-5.5V OPERATES WITH 0.4MHZ		NOT SPECIFIED	NOT SPECIFIED		4.9 mm
BR24G64FJ-3GTE2	ROHM	EEPROM	INDUSTRIAL	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	8192 words	2.5		8	SMALL OUTLINE, LOW PROFILE	SOP8,.25		40	1.27 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel		1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.65 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm		5 ms	I2C	65536 bit	1.6 V	SEATED HT-CALCULATED		NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	4.9 mm	2.5
BR24G01FVM-3GTTR	ROHM	EEPROM	INDUSTRIAL	8	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words	2.5		8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel		128X8	128	-40 Cel			DUAL		R-PDSO-G8		5.5 V	.9 mm		.4 MHz	2.8 mm		5 ms	I2C	1024 bit	1.6 V			NOT SPECIFIED	NOT SPECIFIED		2.9 mm
BR24G32FJ-3AGTE2	ROHM	EEPROM	INDUSTRIAL	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		4096 words			8	SMALL OUTLINE, LOW PROFILE				1.27 mm	85 Cel		4KX8	4K	-40 Cel	TIN		DUAL		R-PDSO-G8		5.5 V	1.65 mm		.4 MHz	3.9 mm		5 ms	I2C	32768 bit	1.6 V	SEATED HGT CALCULATED	e3				4.9 mm
BR24L02FV-WE2	ROHM	EEPROM	INDUSTRIAL	8	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words	2.5	2/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	40	.65 mm	85 Cel		256X8	256	-40 Cel	TIN COPPER	1010DDDR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.5 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V		e2	10	260	.000002 Amp	4.4 mm
BR24L04F-WE2	ROHM	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	512 words	2.5	2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel		512X8	512	-40 Cel	TIN COPPER	1010DDMR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.78 mm	1000000 Write/Erase Cycles	.4 MHz	4.4 mm	Not Qualified	5 ms	I2C	4096 bit	1.8 V		e2	10	260	.000002 Amp	5 mm
BR24L02F-WE2	ROHM	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words	2.5	2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel		256X8	256	-40 Cel	TIN COPPER	1010DDDR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.78 mm	1000000 Write/Erase Cycles	.4 MHz	4.4 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V		e2	10	260	.000002 Amp	5 mm
BR24G256FJ-3AGTE2	ROHM	EEPROM	INDUSTRIAL	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		32768 words			8	SMALL OUTLINE, LOW PROFILE				1.27 mm	85 Cel		32KX8	32K	-40 Cel			DUAL		R-PDSO-G8		5.5 V	1.65 mm		1 MHz	3.9 mm		5 ms	I2C	262144 bit	1.7 V	SEATED HT-CALCULATED		NOT SPECIFIED	NOT SPECIFIED		4.9 mm
BR24H256FVM-5ACTR	ROHM	EEPROM	AUTOMOTIVE	8	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		32768 words			8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH				.65 mm	125 Cel		32KX8	32K	-40 Cel			DUAL		R-PDSO-G8		5.5 V	.9 mm		1 MHz	2.8 mm		3.5 ms	I2C	262144 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		2.9 mm
BR24G01FVM-3AGTTR	ROHM	EEPROM	INDUSTRIAL	8	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words			8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel		128X8	128	-40 Cel			DUAL		R-PDSO-G8		5.5 V	.9 mm		1 MHz	2.8 mm		5 ms	I2C	1024 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		2.9 mm
BR24G1MFJ-3AGTE2	ROHM	EEPROM	INDUSTRIAL	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		131072 words			8	SMALL OUTLINE, LOW PROFILE				1.27 mm	85 Cel		128KX8	128K	-40 Cel			DUAL		R-PDSO-G8		5.5 V	1.65 mm		1 MHz	3.9 mm		5 ms	I2C	1048576 bit	1.7 V	SEATED HT-CALCULATED		NOT SPECIFIED	NOT SPECIFIED		4.9 mm
BR25G320FJ-3GE2	ROHM	EEPROM	INDUSTRIAL	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		4096 words	1.8		8	SMALL OUTLINE, LOW PROFILE				1.27 mm	85 Cel		4KX8	4K	-40 Cel			DUAL		R-PDSO-G8		5.5 V	1.65 mm		20 MHz	3.9 mm		5 ms	SPI	32768 bit	1.6 V	SEATED HT-CALCULATED		NOT SPECIFIED	NOT SPECIFIED		4.9 mm
BR25G256FJ-3GE2	ROHM	EEPROM	INDUSTRIAL	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	8 mA	32768 words	5		8	SMALL OUTLINE, LOW PROFILE	SOP8,.25		100	1.27 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel			DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.65 mm	1000000 Write/Erase Cycles	20 MHz	3.9 mm		5 ms	SPI	262144 bit	4.5 V	SEATED HT-CALCULATED;also operates with 10mhz @2.5V,5MHZ @1.7V,3MHZ@1.6V		NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	4.9 mm	5
BR24L02FVT-WE2	ROHM	EEPROM	INDUSTRIAL	8	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words	2.5	2/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	40	.65 mm	85 Cel		256X8	256	-40 Cel	TIN COPPER	1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.25 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V		e2			.000002 Amp	4.4 mm
BR24T256-W	ROHM	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2.5 mA	32768 words		1.8/5	8	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	85 Cel		32KX8	32K	-40 Cel	MATTE TIN	1010DDDR	DUAL	HARDWARE	R-PDIP-T8	1	5.5 V	4.21 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	262144 bit	1.6 V	SEATED HT-CALCULATED	e3			.000002 Amp	9.3 mm
BR24T256-WZ	ROHM	EEPROM																																									I2C					NOT SPECIFIED	NOT SPECIFIED
BR25H640NUX-5ACTR	ROHM	EEPROM																																									SPI					NOT SPECIFIED	NOT SPECIFIED
BR93L46RFJ-WE2	ROHM	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1.5 mA	64 words	2.5	2/5	16	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel		64X16	64	-40 Cel			DUAL	SOFTWARE	R-PDSO-G8		5.5 V		1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	1024 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	4.9 mm
BR24G04NUX-3ATTR	ROHM	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		512 words			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.5 mm	85 Cel		512X8	512	-40 Cel			DUAL		R-PDSO-N8		5.5 V	.6 mm		.4 MHz	2 mm		5 ms	I2C	4096 bit	1.6 V	1.7V AT 1MHZ		NOT SPECIFIED	NOT SPECIFIED		3 mm
BR24T256FJ-WE2	ROHM	EEPROM	INDUSTRIAL	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2.5 mA	32768 words	3	1.8/5	8	SMALL OUTLINE, LOW PROFILE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel		32KX8	32K	-40 Cel	MATTE TIN	1010DDDR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.65 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	262144 bit	1.6 V	SEATED HT-CALCULATED	e3			.000002 Amp	4.9 mm
BR93C56-WMN6TP	ROHM	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	2048 words		3/5	1	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel		2KX1	2K	-40 Cel			DUAL	SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	2048 bit	2.5 V			NOT SPECIFIED	NOT SPECIFIED	.000005 Amp	4.9 mm
BR24G128F-5E2	ROHM	EEPROM																																									I2C					NOT SPECIFIED	NOT SPECIFIED
BR24G32F-3AGTE2	ROHM	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		4096 words			8	SMALL OUTLINE				1.27 mm	85 Cel		4KX8	4K	-40 Cel	TIN		DUAL		R-PDSO-G8		5.5 V	1.71 mm		.4 MHz	4.4 mm		5 ms	I2C	32768 bit	1.6 V	SEATED HGT CALCULATED	e3				5 mm
BR24G64F-5E2	ROHM	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		8192 words	2.5		8	SMALL OUTLINE				1.27 mm	85 Cel		8KX8	8K	-40 Cel			DUAL		R-PDSO-G8		5.5 V	1.71 mm		1 MHz	4.4 mm		5 ms	I2C	65536 bit	1.6 V			NOT SPECIFIED	NOT SPECIFIED		5 mm
BR24L01AF-WE2	ROHM	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words	2.5	2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel		128X8	128	-40 Cel	TIN COPPER	1010DDDR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.71 mm	1000000 Write/Erase Cycles	.4 MHz	4.4 mm	Not Qualified	5 ms	I2C	1024 bit	1.8 V		e2	10	260	.000002 Amp	5 mm
BR24L08FVM-WTR	ROHM	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	1024 words	2.5	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.16	EEPROMs	40	.65 mm	85 Cel		1KX8	1K	-40 Cel	TIN COPPER	1010DMMR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.095 mm	1000000 Write/Erase Cycles	.4 MHz	2.8 mm	Not Qualified	5 ms	I2C	8192 bit	1.8 V		e2	10	260	.000002 Amp	2.9 mm
BR24T01NUX-WGTR	ROHM	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	2 mA	128 words	2.5	1.8/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20	EEPROMs	40	.5 mm	85 Cel		128X8	128	-40 Cel		1010DDDR	DUAL	HARDWARE	R-PDSO-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	MICROWIRE	1024 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	3 mm
BR25H640FJ-2ACE2	ROHM	EEPROM	AUTOMOTIVE	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		8192 words			8	SMALL OUTLINE, LOW PROFILE				1.27 mm	125 Cel		8KX8	8K	-40 Cel			DUAL		R-PDSO-G8		5.5 V	1.65 mm		5 MHz	3.9 mm		4 ms	SPI	65536 bit	2.5 V	SEATED HT-CALCULATED		NOT SPECIFIED	NOT SPECIFIED		4.9 mm
BR93L66RF-WE2	ROHM	EEPROM	INDUSTRIAL	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1.5 mA	256 words	2.5	2/5	16	SMALL OUTLINE, LOW PROFILE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel		256X16	256	-40 Cel			DUAL	SOFTWARE	R-PDSO-G8		5.5 V	1.6 mm	1000000 Write/Erase Cycles	2 MHz	4.4 mm	Not Qualified	5 ms	MICROWIRE	4096 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	5 mm
BR24G16FJ-3GTE2	ROHM	EEPROM	INDUSTRIAL	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	2048 words	3		8	SMALL OUTLINE, LOW PROFILE	SOP8,.25		40	1.27 mm	85 Cel	3-STATE	2KX8	2K	-40 Cel	TIN	1010MMMR	DUAL	SOFTWARE	R-PDSO-G8		5.5 V	1.65 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm		5 ms	I2C	16384 bit	1.6 V	SEATED HGT CALCULATED	e3			.000002 Amp	4.9 mm	3
BR34E02FVT-WE2	ROHM	EEPROM	INDUSTRIAL	8	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5	1.8/3.3	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	40	.65 mm	85 Cel		256X8	256	-40 Cel	PURE TIN	1010DDDR	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.25 mm	1000000 Write/Erase Cycles	.1 MHz	3 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V			10	260	.000002 Amp	4.4 mm
BR93G46NUX-3ATTR	ROHM	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		64 words	5		16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.5 mm	85 Cel		64X16	64	-40 Cel	TIN		DUAL		R-PDSO-N8		5.5 V	.6 mm		3 MHz	2 mm		5 ms	3-WIRE	1024 bit	4.5 V	IT ALSO OPERATES AT 1MHZ AT 1.7 MIN	e3				3 mm
BR24G1MF-3AGTE2	ROHM	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		131072 words			8	SMALL OUTLINE				1.27 mm	85 Cel		128KX8	128K	-40 Cel			DUAL		R-PDSO-G8		5.5 V	1.71 mm		1 MHz	4.4 mm		5 ms	I2C	1048576 bit	1.7 V	SEATED HT-CALCULATED		NOT SPECIFIED	NOT SPECIFIED		5 mm
BR24H256NUX-5ACTR	ROHM	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		32768 words			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.5 mm	125 Cel		32KX8	32K	-40 Cel			DUAL		R-PDSO-N8		5.5 V	.6 mm		1 MHz	2 mm		3.5 ms	I2C	262144 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		3 mm
BR24G08FVM-3AGTTR	ROHM	EEPROM	INDUSTRIAL	8	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1024 words	2.5		8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel		1KX8	1K	-40 Cel			DUAL		R-PDSO-G8		5.5 V	.9 mm		1 MHz	2.8 mm		5 ms	I2C	8192 bit	1.7 V	IT ALSO OPERATES AT 0.4MHZ AT 1.6MIN		NOT SPECIFIED	NOT SPECIFIED		2.9 mm
BR24G64FVT-5E2	ROHM	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		8192 words	2.5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel		8KX8	8K	-40 Cel			DUAL		R-PDSO-G8		5.5 V	1.2 mm		1 MHz	3 mm		5 ms	I2C	65536 bit	1.6 V			NOT SPECIFIED	NOT SPECIFIED		4.4 mm
BR24T64FVJ-WE2	ROHM	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	8192 words	2.5	1.8/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	40	.65 mm	85 Cel		8KX8	8K	-40 Cel	MATTE TIN	1010DDDR	DUAL	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	65536 bit	1.6 V		e3			.000002 Amp	3 mm
BR93H86RFJ-WCE2	ROHM	EEPROM	AUTOMOTIVE	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	1.5 mA	1024 words	4	2/5	16	SMALL OUTLINE, LOW PROFILE	SOP8,.25	EEPROMs	40	1.27 mm	125 Cel		1KX16	1K	-40 Cel			DUAL	SOFTWARE	R-PDSO-G8		5.5 V	1.65 mm	1000000 Write/Erase Cycles	1.25 MHz	3.9 mm	Not Qualified	10 ms	3-WIRE	16384 bit	2.7 V	SEATED HT-CALCULATED		NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	4.9 mm
BR24T1MFJ-3AME2	ROHM	EEPROM	INDUSTRIAL	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		131072 words	2.5		8	SMALL OUTLINE, LOW PROFILE				1.27 mm	85 Cel		128KX8	128K	-40 Cel			DUAL		R-PDSO-G8		5.5 V	1.65 mm		1 MHz	3.9 mm		5 ms	I2C	1048576 bit	1.7 V	SEATED HT-CALCULATED		NOT SPECIFIED	NOT SPECIFIED		4.9 mm
BR24T512F-3AME2	ROHM	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		65536 words	2.5		8	SMALL OUTLINE				1.27 mm	85 Cel		64KX8	64K	-40 Cel			DUAL		R-PDSO-G8		5.5 V	1.71 mm		1 MHz	4.4 mm		5 ms	I2C	524288 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		5 mm
BR25S256F-WE2	ROHM	EEPROM	INDUSTRIAL	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	8 mA	32768 words	1.8	1.8/5	8	SMALL OUTLINE, LOW PROFILE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel		32KX8	32K	-40 Cel			DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.6 mm	1000000 Write/Erase Cycles	20 MHz	4.4 mm	Not Qualified	5 ms	SPI	262144 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	5 mm
BU9883FV-WE2	ROHM	EEPROM	INDUSTRIAL	16	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	2048 words		3.3/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSSOP16,.25	EEPROMs	40	.65 mm	85 Cel	3-STATE	2KX8	2K	-40 Cel		1010000R	DUAL	HARDWARE	R-PDSO-G16		5.5 V	1.25 mm	1000000 Write/Erase Cycles	.4 MHz	4.4 mm	Not Qualified	5 ms	I2C	16384 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	5 mm
BR24G02NUX-3TTR	ROHM	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	2 mA	256 words	2.5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		40	.5 mm	85 Cel	3-STATE	256X8	256	-40 Cel		1010DDDR	DUAL	HARDWARE	R-PDSO-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm		5 ms	I2C	2048 bit	1.6 V			NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	3 mm	2.5
BR24G04FJ-3GTE2	ROHM	EEPROM	INDUSTRIAL	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		512 words	2.5		8	SMALL OUTLINE, LOW PROFILE				1.27 mm	85 Cel		512X8	512	-40 Cel			DUAL		R-PDSO-G8		5.5 V	1.65 mm		.4 MHz	3.9 mm		5 ms	I2C	4096 bit	1.6 V			NOT SPECIFIED	NOT SPECIFIED		4.9 mm
BR24G128FVJ-3AGTE2	ROHM	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16384 words			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel		16KX8	16K	-40 Cel			DUAL		S-PDSO-G8		5.5 V	1.1 mm		1 MHz	3 mm		5 ms	I2C	131072 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		3 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.