Renesas Electronics EEPROM 899

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
X28HC256JIZ-12T1	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words	5			8	CHIP CARRIER				1.27 mm	85 Cel			32KX8	32K	-40 Cel		MATTE TIN			QUAD		R-PQCC-J32	3	5.5 V	3.55 mm			11.43 mm	Not Qualified	5 ms		262144 bit	4.5 V			e3	30	260		13.97 mm	120 ns	5
X28HC256JIZ-12	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words	5			8	CHIP CARRIER				1.27 mm	85 Cel			32KX8	32K	-40 Cel		MATTE TIN			QUAD		R-PQCC-J32	3	5.5 V	3.55 mm			11.43 mm		5 ms		262144 bit	4.5 V			e3	30	260		13.97 mm	120 ns	5
X28HC256JIZ-90	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words	5			8	CHIP CARRIER				1.27 mm	85 Cel			32KX8	32K	-40 Cel		MATTE TIN			QUAD		R-PQCC-J32	3	5.5 V	3.55 mm			11.43 mm		5 ms		262144 bit	4.5 V			e3	30	260		13.97 mm	90 ns	5
X28HC256JIZ-90T1	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words	5			8	CHIP CARRIER				1.27 mm	85 Cel			32KX8	32K	-40 Cel		MATTE TIN			QUAD		R-PQCC-J32	3	5.5 V	3.55 mm			11.43 mm	Not Qualified	5 ms		262144 bit	4.5 V			e3	30	260		13.97 mm	90 ns	5
R1EV24002ASAS0I#K0	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2.5 mA	256 words	3.3		3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel			256X8	256	-40 Cel			1010DDDR		DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.73 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	2048 bit	2.5 V					260	.000002 Amp	4.89 mm		3.3
R1EV24002ASAS0A#K0	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		256 words				8	SMALL OUTLINE				1.27 mm	85 Cel			256X8	256	-40 Cel					DUAL		R-PDSO-G8		5.5 V	1.73 mm		.4 MHz	3.9 mm		5 ms	I2C	2048 bit	2.5 V				NOT SPECIFIED	NOT SPECIFIED		4.89 mm
R1EV24004ASAS0I#K0	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2.5 mA	512 words	3.3		3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel			512X8	512	-40 Cel			1010DDMR		DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.73 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	4096 bit	2.5 V					260	.000002 Amp	4.89 mm		3.3
X28HC256JI-12	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words	5			8	CHIP CARRIER				1.27 mm	85 Cel			32KX8	32K	-40 Cel					QUAD		R-PQCC-J32		5.5 V	3.55 mm			11.43 mm		5 ms		262144 bit	4.5 V							13.97 mm	120 ns	5
X28HC256JI-15	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words	5			8	CHIP CARRIER				1.27 mm	85 Cel			32KX8	32K	-40 Cel					QUAD		R-PQCC-J32		5.5 V	3.55 mm			11.43 mm		5 ms		262144 bit	4.5 V							13.97 mm	150 ns	5
X28HC64JI-90	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		8192 words	5			8	CHIP CARRIER				1.27 mm	85 Cel			8KX8	8K	-40 Cel					QUAD		R-PQCC-J32		5.5 V	3.55 mm			11.43 mm		5 ms		65536 bit	4.5 V							13.97 mm	90 ns	5
X28HC256SI-12	Renesas Electronics	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	5			8	SMALL OUTLINE				1.27 mm	85 Cel			32KX8	32K	-40 Cel					DUAL		R-PDSO-G28		5.5 V	2.65 mm			7.5 mm		5 ms		262144 bit	4.5 V							17.9 mm	120 ns	5
X28HC256JI-90	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words	5			8	CHIP CARRIER				1.27 mm	85 Cel			32KX8	32K	-40 Cel					QUAD		R-PQCC-J32		5.5 V	3.55 mm			11.43 mm		5 ms		262144 bit	4.5 V							13.97 mm	90 ns	5
R1EX25032ASA00I#S0	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		4096 words	3.6			8	SMALL OUTLINE				1.27 mm	85 Cel			4KX8	4K	-40 Cel					DUAL		R-PDSO-G8		5.5 V	1.73 mm		5 MHz	3.9 mm		5 ms	SPI	32768 bit	2.5 V	IT IS ALSO OPERATES IN 3MHZ CLOCK FREQUENCY AT 1.8V MIN SUPPLY			NOT SPECIFIED	NOT SPECIFIED		4.89 mm
R1EX25064ASA00I#S0	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		8192 words	3.6			8	SMALL OUTLINE				1.27 mm	85 Cel			8KX8	8K	-40 Cel					DUAL		R-PDSO-G8		5.5 V	1.73 mm		5 MHz	3.9 mm		5 ms	SPI	65536 bit	2.5 V	IT IS ALSO OPERATES IN 3MHZ CLOCK FREQUENCY AT 1.8V MIN SUPPLY			NOT SPECIFIED	NOT SPECIFIED		4.89 mm
R1EX25004ASA00A#S0	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2.5 mA	512 words			2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel			512X8	512	-40 Cel		MATTE TIN			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.73 mm	1000000 Write/Erase Cycles	5 MHz	3.9 mm	Not Qualified	5 ms	SPI	4096 bit	2.5 V	IT IS ALSO OPERATES IN 3MHZ CLOCK FREQUENCY AT 1.8V MIN SUPPLY		e3			.000002 Amp	4.89 mm
R1EX25512ATA00I#S0	Renesas Electronics	EEPROM																																													SPI						NOT SPECIFIED	NOT SPECIFIED
SPD5118-Y1B000NCG8	Renesas Electronics	EEPROM																															TIN						1													e3		260
X28HC64JIZ-12	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		8192 words	5			8	CHIP CARRIER				1.27 mm	85 Cel			8KX8	8K	-40 Cel		MATTE TIN			QUAD		R-PQCC-J32	3	5.5 V	3.55 mm			11.43 mm		5 ms		65536 bit	4.5 V			e3	30	245		13.97 mm	120 ns	5
X28HC64JIZ-12T1	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel			8KX8	8K	-40 Cel	NO	MATTE TIN			QUAD		R-PQCC-J32	3	5.5 V	3.55 mm	1000000 Write/Erase Cycles		11.43 mm	Not Qualified	5 ms		65536 bit	4.5 V		64	e3	30	245	.0002 Amp	13.97 mm	120 ns	5	YES
X28C010DMB-12	Renesas Electronics	EEPROM		32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	5	YES		8	IN-LINE	DIP32,.6		100	2.54 mm	125 Cel	NO	3-STATE	128KX8	128K	-55 Cel					DUAL		R-CDIP-T32		5.5 V	5.92 mm	100000 Write/Erase Cycles		15.24 mm		10 ms		1048576 bit	4.5 V	LG_MAX	256				.0005 Amp	42.95 mm	120 ns	5	YES
X28HC256JIZ-15	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words	5			8	CHIP CARRIER				1.27 mm	85 Cel			32KX8	32K	-40 Cel		MATTE TIN			QUAD		R-PQCC-J32	3	5.5 V	3.55 mm			11.43 mm		5 ms		262144 bit	4.5 V			e3	30	260		13.97 mm	150 ns	5
X28HC64JIZ-90	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		8192 words	5			8	CHIP CARRIER				1.27 mm	85 Cel			8KX8	8K	-40 Cel		MATTE TIN			QUAD		R-PQCC-J32	3	5.5 V	3.55 mm			11.43 mm		5 ms		65536 bit	4.5 V			e3	30	245		13.97 mm	90 ns	5
X28HC64PIZ-12	Renesas Electronics	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words	5			8	IN-LINE				2.54 mm	85 Cel			8KX8	8K	-40 Cel		MATTE TIN			DUAL		R-PDIP-T28		5.5 V	6.35 mm			15.24 mm		5 ms		65536 bit	4.5 V			e3				37.4 mm	120 ns	5
X28HC64PZ-12	Renesas Electronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words	5			8	IN-LINE				2.54 mm	70 Cel			8KX8	8K	0 Cel		MATTE TIN			DUAL		R-PDIP-T28		5.5 V	6.35 mm			15.24 mm		5 ms		65536 bit	4.5 V			e3				37.4 mm	120 ns	5
HN58V65AFP-10E	Renesas Electronics	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	8192 words	3.3	YES	3/5	8	SMALL OUTLINE	SOP28,.45	EEPROMs		1.27 mm	70 Cel			8KX8	8K	0 Cel	NO			YES	DUAL		R-PDSO-G28		5.5 V	2.5 mm			8.4 mm	Not Qualified	10 ms		65536 bit	2.7 V		64		NOT SPECIFIED	NOT SPECIFIED	.000005 Amp	18.3 mm	100 ns	3	YES
X28C512RI-90	Renesas Electronics	EEPROM	INDUSTRIAL	32	SOP	RECTANGULAR	CERAMIC	YES		CMOS		GULL WING	PARALLEL		50 mA	65536 words	5	YES	5	8	SMALL OUTLINE	SOP32,.56	EEPROMs		1.27 mm	85 Cel			64KX8	64K	-40 Cel	NO				DUAL		R-XDSO-G32				100000 Write/Erase Cycles			Not Qualified	10 ms		524288 bit			128				.0005 Amp		90 ns		YES
HN58X2404SFPIAG	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		512 words	2.5			8	SMALL OUTLINE				1.27 mm	85 Cel			512X8	512	-40 Cel		TIN LEAD			DUAL		R-PDSO-G8		5.5 V	1.73 mm		.4 MHz	3.9 mm	Not Qualified	15 ms	I2C	4096 bit	1.8 V			e0				4.89 mm
X28C513EMB-12	Renesas Electronics	EEPROM		32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	CHIP CARRIER	LCC32,.45X.55		10	1.27 mm	125 Cel		3-STATE	64KX8	64K	-55 Cel	NO				QUAD		R-CQCC-N32		5.5 V	3.05 mm	100000 Write/Erase Cycles		11.425 mm		10 ms		524288 bit	4.5 V						.0005 Amp	13.965 mm	120 ns	5	YES
HN58X2408TIE	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words	2.5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	10	.65 mm	85 Cel			1KX8	1K	-40 Cel			1010DMMR		DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.1 mm	100000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	15 ms	I2C	8192 bit	1.8 V						.000003 Amp	4.4 mm
HN58X25128TIAG	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	4 mA	16384 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	10	.65 mm	85 Cel			16KX8	16K	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	3 MHz	3 mm	Not Qualified	8 ms	SPI	131072 bit	1.8 V						.000003 Amp	4.4 mm
X28C010RI-12	Renesas Electronics	EEPROM		32	SOP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	5	YES		8	SMALL OUTLINE	SOP32,.56		100	1.27 mm	85 Cel	NO	3-STATE	128KX8	128K	-40 Cel					DUAL		R-CQCC-N32		5.5 V	4.191 mm	100000 Write/Erase Cycles		11.176 mm		10 ms		1048576 bit	4.5 V		256				.0005 Amp	21.082 mm	120 ns	5	YES
HN58C1001FP-15	Renesas Electronics	EEPROM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	5	YES	5	8	SMALL OUTLINE	SOP32,.56	EEPROMs		1.27 mm	70 Cel			128KX8	128K	0 Cel	NO	TIN LEAD		YES	DUAL		R-PDSO-G32		5.5 V	3 mm			11.3 mm	Not Qualified	10 ms		1048576 bit	4.5 V		128	e0			.00002 Amp	20.45 mm	150 ns	5	YES
X28C512KMB-12	Renesas Electronics	EEPROM	MILITARY	36	PGA	SQUARE	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	PIN/PEG	PARALLEL		50 mA	65536 words	5	YES	5	8	GRID ARRAY	PGA36,7X7	EEPROMs		2.54 mm	125 Cel			64KX8	64K	-55 Cel	NO				PERPENDICULAR		S-XPGA-P36				100000 Write/Erase Cycles			Not Qualified	10 ms		524288 bit			128				.0005 Amp		120 ns		YES
X28C513JZ-15	Renesas Electronics	EEPROM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	CHIP CARRIER	LDCC32,.5X.6		10	1.27 mm	70 Cel		3-STATE	64KX8	64K	0 Cel	NO				QUAD		R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles		13.97 mm		10 ms		524288 bit	4.5 V						.0005 Amp	11.43 mm	150 ns	5	YES
HN58X2416SFPI	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		2048 words	2.5			8	SMALL OUTLINE				1.27 mm	85 Cel			2KX8	2K	-40 Cel		TIN LEAD			DUAL		R-PDSO-G8		5.5 V	1.73 mm		.4 MHz	3.9 mm	Not Qualified	15 ms	I2C	16384 bit	1.8 V			e0				4.89 mm
X28C512KM-12	Renesas Electronics	EEPROM		36	PGA	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	GRID ARRAY	PGA36,7X7		10	2.54 mm	125 Cel		3-STATE	64KX8	64K	-55 Cel	NO				PERPENDICULAR		S-CPGA-P36		5.5 V	4.88 mm	100000 Write/Erase Cycles		19.305 mm		10 ms		524288 bit	4.5 V						.0005 Amp	19.305 mm	120 ns	5	YES
HN58X24128FPIAG	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		5 mA	16384 words			2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	10	1.27 mm	85 Cel			16KX8	16K	-40 Cel			1010DDDR		DUAL	HARDWARE	R-PDSO-G8				100000 Write/Erase Cycles			Not Qualified		I2C	131072 bit							.000003 Amp
HN58X2416STI	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		2048 words	2.5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel			2KX8	2K	-40 Cel		TIN LEAD			DUAL		R-PDSO-G8		5.5 V	1.1 mm		.4 MHz	3 mm	Not Qualified	15 ms	I2C	16384 bit	1.8 V			e0				4.4 mm
HN58C256AP-85E	Renesas Electronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	70 Cel			32KX8	32K	0 Cel	NO				DUAL		R-PDIP-T28	1	5.5 V	5.7 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	10 ms		262144 bit	4.5 V		64				.00002 Amp	35.6 mm	85 ns	5	YES
X28C512RM-15	Renesas Electronics	EEPROM	MILITARY	32	SOP	RECTANGULAR	CERAMIC	YES		CMOS		GULL WING	PARALLEL		50 mA	65536 words	5	YES	5	8	SMALL OUTLINE	SOP32,.56	EEPROMs		1.27 mm	125 Cel			64KX8	64K	-55 Cel	NO				DUAL		R-XDSO-G32				100000 Write/Erase Cycles			Not Qualified	10 ms		524288 bit			128				.0005 Amp		150 ns		YES
HN58064P-30	Renesas Electronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words	5			8	IN-LINE				2.54 mm	70 Cel			8KX8	8K	0 Cel		TIN LEAD			DUAL		R-PDIP-T28		5.5 V	5.7 mm			15.24 mm	Not Qualified			65536 bit	4.5 V			e0				35.6 mm	300 ns	5
HN58C256P-15	Renesas Electronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE	DIP28,.6			2.54 mm	70 Cel			32KX8	32K	0 Cel		TIN LEAD			DUAL		R-PDIP-T28			5.7 mm			15.24 mm	Not Qualified			262144 bit				e0				35.6 mm	150 ns	5
HN58X2532TIE	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		4096 words	2.5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel			4KX8	4K	-40 Cel					DUAL		R-PDSO-G8		5.5 V	1.1 mm		3 MHz	3 mm	Not Qualified	8 ms	SPI	32768 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED		4.4 mm
X28C512JMB-25	Renesas Electronics	EEPROM	MILITARY	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	38535Q/M;38534H;883B	J BEND	PARALLEL		50 mA	65536 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	125 Cel			64KX8	64K	-55 Cel	NO				QUAD		R-PQCC-J32				100000 Write/Erase Cycles			Not Qualified	10 ms		524288 bit			128				.0005 Amp		250 ns		YES
X28C512DM-90	Renesas Electronics	EEPROM	MILITARY	32	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL		50 mA	65536 words	5	YES	5	8	IN-LINE	DIP32,.6	EEPROMs		2.54 mm	125 Cel			64KX8	64K	-55 Cel	NO				DUAL		R-XDIP-T32				100000 Write/Erase Cycles			Not Qualified	10 ms		524288 bit			128				.0005 Amp		90 ns		YES
X28C512J-15	Renesas Electronics	EEPROM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	CHIP CARRIER	LDCC32,.5X.6		10	1.27 mm	70 Cel		3-STATE	64KX8	64K	0 Cel	NO				QUAD		R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles		13.97 mm		10 ms		524288 bit	4.5 V						.0005 Amp	11.43 mm	150 ns	5	YES
HN58X24256TSR	Renesas Electronics	EEPROM	OTHER	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		32768 words				8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			10	.65 mm	85 Cel			32KX8	32K	-20 Cel					DUAL		R-PDSO-G14		5.5 V	1.1 mm		.4 MHz	4.4 mm	Not Qualified	15 ms		262144 bit	1.8 V	10 YEAR DATA RETENTION						5 mm		3
HN58V66AT-10SR	Renesas Electronics	EEPROM	OTHER	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	8192 words	3.6	YES	3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	EEPROMs		.55 mm	85 Cel			8KX8	8K	-20 Cel	NO			YES	DUAL		R-PDSO-G28	1	5.5 V	1.2 mm			8 mm	Not Qualified	10 ms		65536 bit	2.7 V		64				.000005 Amp	11.8 mm	100 ns	3	YES

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.