Texas Instruments EEPROM 12

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Maximum Write Cycle Time (tWC)	Memory Density	Minimum Supply Voltage (Vsup)	Page Size (words)	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
TMS28C64-25N	Texas Instruments	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL		20 mA	8192 words	5	NO	5	8	IN-LINE	DIP28,.6	EEPROMs	2.54 mm	70 Cel		8KX8	8K	0 Cel	NO	YES	DUAL	R-PDIP-T28				Not Qualified		65536 bit		32			.003 Amp		250 ns		YES
TMS28C64-35JL	Texas Instruments	EEPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	8192 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	EEPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	YES	DUAL	R-CDIP-T28	5.5 V	4.907 mm	15.24 mm	Not Qualified		65536 bit	4.5 V	32	NOT SPECIFIED	NOT SPECIFIED	.003 Amp	36.83 mm	350 ns	5	YES
TMS28C64-35J	Texas Instruments	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE	PARALLEL		20 mA	8192 words	5	NO	5	8	IN-LINE	DIP28,.6	EEPROMs	2.54 mm	70 Cel		8KX8	8K	0 Cel	NO	YES	DUAL	R-XDIP-T28				Not Qualified		65536 bit		32			.003 Amp		350 ns		YES
TMS28C64-35N	Texas Instruments	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL		20 mA	8192 words	5	NO	5	8	IN-LINE	DIP28,.6	EEPROMs	2.54 mm	70 Cel		8KX8	8K	0 Cel	NO	YES	DUAL	R-PDIP-T28				Not Qualified		65536 bit		32			.003 Amp		350 ns		YES
M38510/26104BZX	Texas Instruments	EEPROM	MILITARY	28	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	FLAT	PARALLEL	ASYNCHRONOUS		32768 words	5			8	FLATPACK				125 Cel		32KX8	32K	-55 Cel			DUAL	R-XDFP-F28	5.5 V			Not Qualified	10 ms	262144 bit	4.5 V						200 ns	5
TMS28C64-25NL	Texas Instruments	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	8192 words	5	NO	5	8	IN-LINE	DIP28,.6	EEPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	YES	DUAL	R-PDIP-T28	5.5 V	5.08 mm	15.24 mm	Not Qualified		65536 bit	4.5 V	32	NOT SPECIFIED	NOT SPECIFIED	.003 Amp	36.32 mm	250 ns	5	YES
TMS28C64-25JL	Texas Instruments	EEPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	8192 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6	EEPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	YES	DUAL	R-CDIP-T28	5.5 V	4.907 mm	15.24 mm	Not Qualified		65536 bit	4.5 V	32	NOT SPECIFIED	NOT SPECIFIED	.003 Amp	36.83 mm	250 ns	5	YES
TMS28C64-25J	Texas Instruments	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE	PARALLEL		20 mA	8192 words	5	NO	5	8	IN-LINE	DIP28,.6	EEPROMs	2.54 mm	70 Cel		8KX8	8K	0 Cel	NO	YES	DUAL	R-XDIP-T28				Not Qualified		65536 bit		32			.003 Amp		250 ns		YES
DLPR910YVA	Texas Instruments	CONFIGURATION MEMORY
TMS28C64-35NL	Texas Instruments	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	8192 words	5	NO	5	8	IN-LINE	DIP28,.6	EEPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	YES	DUAL	R-PDIP-T28	5.5 V	5.08 mm	15.24 mm	Not Qualified		65536 bit	4.5 V	32	NOT SPECIFIED	NOT SPECIFIED	.003 Amp	36.32 mm	350 ns	5	YES
5962-01-248-0239	Texas Instruments	EEPROM CARD	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		TTL	THROUGH-HOLE				1024 words	5		5	8	IN-LINE	DIP24,.6	OTP ROMs	2.54 mm	70 Cel		1KX8	1K	0 Cel			DUAL	R-PDIP-T24				Not Qualified		8192 bit			NOT SPECIFIED	NOT SPECIFIED			70 ns	2.7
5962-01-248-0235	Texas Instruments	EEPROM CARD	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO		TTL	THROUGH-HOLE				1024 words	5		5	8	IN-LINE	DIP24,.6	OTP ROMs	2.54 mm	70 Cel		1KX8	1K	0 Cel			DUAL	R-XDIP-T24				Not Qualified		8192 bit			NOT SPECIFIED	NOT SPECIFIED			70 ns	2.7

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.