40 EPROM 531

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
M27C202-150F1	STMicroelectronics	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		16	IN-LINE, WINDOW				2.54 mm	70 Cel		128KX16	128K	0 Cel		DUAL	R-GDIP-T40	5.5 V	5.97 mm	15.24 mm	Not Qualified	2097152 bit	4.5 V			52.195 mm	100 ns
M27C202-200F1	STMicroelectronics	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		16	IN-LINE, WINDOW				2.54 mm	70 Cel		128KX16	128K	0 Cel		DUAL	R-GDIP-T40	5.5 V	5.97 mm	15.24 mm	Not Qualified	2097152 bit	4.5 V			52.195 mm	100 ns
M27C4002-15XF6	STMicroelectronics	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	262144 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6		EPROMs	2.54 mm	85 Cel	3-STATE	256KX16	256K	-40 Cel	MATTE TIN	DUAL	R-CDIP-T40	5.25 V	5.72 mm	15.24 mm	Not Qualified	4194304 bit	4.75 V	e3	.0001 Amp	52.195 mm	150 ns
M27C1024-15F7	STMicroelectronics	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	65536 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6		EPROMs	2.54 mm	105 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T40	5.5 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V	e3	.0001 Amp	52.195 mm	100 ns
M27C1024-15F3X	STMicroelectronics	UVPROM	AUTOMOTIVE	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	65536 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6		EPROMs	2.54 mm	125 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T40	5.5 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V	e3	.0001 Amp	52.195 mm	100 ns
M27C1024-70F1	STMicroelectronics	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	65536 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6		EPROMs	2.54 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	MATTE TIN	DUAL	R-GDIP-T40	5.5 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V	e3	.0001 Amp	52.195 mm	70 ns
M27C400-100XF6	STMicroelectronics	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	262144 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6	8	EPROMs	2.54 mm	85 Cel	3-STATE	256KX16	256K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T40	5.25 V	5.97 mm	15.24 mm	Not Qualified	4194304 bit	4.75 V	e0	.0001 Amp	52.195 mm	100 ns
M27C1024-20F3X	STMicroelectronics	UVPROM	AUTOMOTIVE	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	65536 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6		EPROMs	2.54 mm	125 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T40	5.5 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V	e3	.0001 Amp	52.195 mm	100 ns
M27C4002-60XF6	STMicroelectronics	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	262144 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6		EPROMs	2.54 mm	85 Cel	3-STATE	256KX16	256K	-40 Cel	MATTE TIN	DUAL	R-CDIP-T40	5.25 V	5.72 mm	15.24 mm	Not Qualified	4194304 bit	4.75 V	e3	.0001 Amp	52.195 mm	60 ns
M27C4002-90F6TR	STMicroelectronics	UVPROM	INDUSTRIAL	40	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		5		16	IN-LINE				2.54 mm	85 Cel		256KX16	256K	-40 Cel		DUAL	R-CDIP-T40	5.5 V	5.72 mm	13.2 mm	Not Qualified	4194304 bit	4.5 V			52.195 mm	90 ns
M27C4002-10F6X	STMicroelectronics	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	262144 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6		EPROMs	2.54 mm	85 Cel	3-STATE	256KX16	256K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T40	5.5 V	5.97 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V	e3	.0001 Amp	52.195 mm	100 ns
M27C1024-10XF7X	STMicroelectronics	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	65536 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6		EPROMs	2.54 mm	105 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T40	5.25 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V	e3	.0001 Amp	52.195 mm	100 ns
M27C1024-35F7X	STMicroelectronics	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	65536 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6		EPROMs	2.54 mm	105 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T40	5.5 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V	e3	.0001 Amp	52.195 mm	35 ns
M27C1024-12F6	STMicroelectronics	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	65536 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6		EPROMs	2.54 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T40	5.5 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V	e3	.0001 Amp	52.195 mm	100 ns
M27C1024-90XF7	STMicroelectronics	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	65536 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6		EPROMs	2.54 mm	105 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T40	5.25 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V	e3	.0001 Amp	52.195 mm	80 ns
M27C4002-20XF1TR	STMicroelectronics	UVPROM	COMMERCIAL	40	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		5		16	IN-LINE				2.54 mm	70 Cel		256KX16	256K	0 Cel		DUAL	R-CDIP-T40	5.5 V	5.72 mm	13.2 mm	Not Qualified	4194304 bit	4.5 V			52.195 mm	200 ns
M27C400-55XF6	STMicroelectronics	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	262144 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6	8	EPROMs	2.54 mm	85 Cel	3-STATE	256KX16	256K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T40	5.25 V	5.97 mm	15.24 mm	Not Qualified	4194304 bit	4.75 V	e0	.0001 Amp	52.195 mm	55 ns
M27C516-20XF1	STMicroelectronics	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6		EPROMs	2.54 mm	70 Cel	3-STATE	32KX16	32K	0 Cel	TIN LEAD	DUAL	R-GDIP-T40	5.25 V	5.71 mm	15.24 mm	Not Qualified	524288 bit	4.75 V	e0	.0002 Amp		200 ns
M27C1024-70XF6	STMicroelectronics	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	65536 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6		EPROMs	2.54 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T40	5.25 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V	e3	.0001 Amp	52.195 mm	70 ns
M27C400-70F1	STMicroelectronics	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	262144 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6	8	EPROMs	2.54 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	R-GDIP-T40	5.5 V	5.97 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V	e0	.0001 Amp	52.195 mm	70 ns
M27C1024-12XF7X	STMicroelectronics	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	65536 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6		EPROMs	2.54 mm	105 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T40	5.25 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V	e3	.0001 Amp	52.195 mm	100 ns
TC574200D-120	Toshiba	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words		5		8	IN-LINE, WINDOW		16		2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-GDIP-T40	5.5 V	6.05 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V	e0		52.07 mm	120 ns
TC574200D-200	Toshiba	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words		5		8	IN-LINE, WINDOW		16		2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-GDIP-T40	5.5 V	6.05 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V	e0		52.07 mm	200 ns
TC57H1024AD-85	Toshiba	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		16	IN-LINE, WINDOW				2.54 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	TIN LEAD	DUAL	R-GDIP-T40	5.25 V	6.05 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V	e0		52.07 mm	85 ns
TC574096D-10	Toshiba	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		5		16	IN-LINE, WINDOW				2.54 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	R-GDIP-T40	5.25 V	6.05 mm	15.24 mm	Not Qualified	4194304 bit	4.75 V	e0		52.07 mm	100 ns
TC57H1025AD-70	Toshiba	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		16	IN-LINE, WINDOW				2.54 mm	70 Cel		64KX16	64K	0 Cel	TIN LEAD	DUAL	R-GDIP-T40	5.25 V	6.05 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V	e0		52.07 mm	70 ns
TC57H1024D-85	Toshiba	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		16	IN-LINE, WINDOW				2.54 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	TIN LEAD	DUAL	R-GDIP-T40	5.25 V	6.05 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V	e0		52.07 mm	85 ns
TC57H1025AD-55	Toshiba	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		16	IN-LINE, WINDOW				2.54 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	TIN LEAD	DUAL	R-GDIP-T40	5.25 V	6.05 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V	e0		52.07 mm	55 ns
TC574096D-150	Toshiba	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		5		16	IN-LINE, WINDOW				2.54 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	R-GDIP-T40	5.5 V	6.05 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V	e0		52.07 mm	150 ns
TC57H1024D-100	Toshiba	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		16	IN-LINE, WINDOW				2.54 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	TIN LEAD	DUAL	R-GDIP-T40	5.5 V	6.05 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V	e0		52.07 mm	100 ns
TC57H1026D-35	Toshiba	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		16	IN-LINE, WINDOW				2.54 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	TIN LEAD	DUAL	R-GDIP-T40	5.25 V	6.05 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V	e0		52.07 mm	35 ns
TC57H1026D-45	Toshiba	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		16	IN-LINE, WINDOW				2.54 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	TIN LEAD	DUAL	R-GDIP-T40	5.25 V	6.05 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V	e0		52.07 mm	45 ns
TC574096D-120	Toshiba	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		5		16	IN-LINE, WINDOW				2.54 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	R-GDIP-T40	5.5 V	6.05 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V	e0		52.07 mm	120 ns
TC571024D-20	Toshiba	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		16	IN-LINE, WINDOW				2.54 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T40	5.25 V	5.94 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V	e0		52.07 mm	200 ns
TC574200D-150	Toshiba	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words		5		8	IN-LINE, WINDOW		16		2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-GDIP-T40	5.5 V	6.05 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V	e0		52.07 mm	150 ns
TC574200D-10	Toshiba	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words		5		8	IN-LINE, WINDOW		16		2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-GDIP-T40	5.25 V	6.05 mm	15.24 mm	Not Qualified	4194304 bit	4.75 V	e0		52.07 mm	100 ns
TC57H1024D-10	Toshiba	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		16	IN-LINE, WINDOW				2.54 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	TIN LEAD	DUAL	R-GDIP-T40	5.25 V	6.05 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V	e0		52.07 mm	100 ns
TC57H1025D-55	Toshiba		COMMERCIAL	40	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE			60 mA	65536 words	COMMON	5	5	16	IN-LINE	DIP40,.6		EPROMs	2.54 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T40				Not Qualified	1048576 bit		e0	.01 Amp		55 ns
TC57H1024AD-100	Toshiba	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		16	IN-LINE, WINDOW				2.54 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	TIN LEAD	DUAL	R-GDIP-T40	5.5 V	6.05 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V	e0		52.07 mm	100 ns
TC571024D-15	Toshiba	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		16	IN-LINE, WINDOW				2.54 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	TIN LEAD	DUAL	R-GDIP-T40	5.25 V	5.94 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V	e0		52.07 mm	150 ns
TC571024D-200	Toshiba	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		16	IN-LINE, WINDOW				2.54 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T40	5.5 V	5.94 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V	e0		52.07 mm	200 ns
UPD27C1024D-15	Renesas Electronics		COMMERCIAL	40	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE				65536 words	COMMON	5	5	16	IN-LINE	DIP40,.6		EPROMs	2.54 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T40				Not Qualified	1048576 bit		e0			150 ns
UPD27C4000DZ-20	Renesas Electronics		COMMERCIAL	40	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE			50 mA	262144 words	COMMON	5	5	16	IN-LINE	DIP40,.6		EPROMs	2.54 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T40				Not Qualified	4194304 bit		e0	.0001 Amp		200 ns
UPD8755AD	Renesas Electronics	UVPROM	COMMERCIAL	40	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE				2048 words	COMMON	5	5	8	IN-LINE	DIP40,.6		EPROMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T40				Not Qualified	16384 bit		e0			160 ns
UPD27C1024D-20	Renesas Electronics		COMMERCIAL	40	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE				65536 words	COMMON	5	5	16	IN-LINE	DIP40,.6		EPROMs	2.54 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T40				Not Qualified	1048576 bit		e0			200 ns
UPD27C4000DZ-15	Renesas Electronics		COMMERCIAL	40	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE			50 mA	262144 words	COMMON	5	5	16	IN-LINE	DIP40,.6		EPROMs	2.54 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T40				Not Qualified	4194304 bit		e0	.0001 Amp		150 ns
UPD27C1024AD-20	Renesas Electronics		COMMERCIAL	40	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE			50 mA	65536 words	COMMON	5	5	16	IN-LINE	DIP40,.6		EPROMs	2.54 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T40				Not Qualified	1048576 bit		e0	.0001 Amp		200 ns
UPD27C1024D-25	Renesas Electronics		COMMERCIAL	40	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE				65536 words	COMMON	5	5	16	IN-LINE	DIP40,.6		EPROMs	2.54 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T40				Not Qualified	1048576 bit		e0			250 ns

EPROM

EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.

EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.

EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.