42 EPROM 103

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
M27V160-150XF1	STMicroelectronics	UVPROM	COMMERCIAL	42	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP42,.6	8	EPROMs	2.54 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	MATTE TIN	DUAL	R-CDIP-T42	3.465 V	5.71 mm	15.24 mm	Not Qualified	16777216 bit	3.135 V		e3	.00006 Amp	54.635 mm	150 ns
M27V800-100XF1	STMicroelectronics	UVPROM	COMMERCIAL	42	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP42,.6	8	EPROMs	2.54 mm	70 Cel	3-STATE	512KX16	512K	0 Cel	TIN LEAD	DUAL	R-GDIP-T42	3.465 V	5.72 mm	15.24 mm	Not Qualified	8388608 bit	3.135 V	CONFIGURABLE AS 512K X 16	e0	.00002 Amp	54.635 mm	100 ns
M27V800-110XF1	STMicroelectronics	UVPROM	COMMERCIAL	42	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	COMMON	3.3	3.3	8	IN-LINE, WINDOW	DIP42,.6	16	EPROMs	2.54 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	TIN LEAD	DUAL	R-GDIP-T42	3.465 V	5.71 mm	15.24 mm	Not Qualified	8388608 bit	3.135 V		e0	.00002 Amp		110 ns
M27V322-100F6	STMicroelectronics	UVPROM	INDUSTRIAL	42	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP42,.6		EPROMs	2.54 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	MATTE TIN	DUAL	R-CDIP-T42	3.63 V	5.72 mm	15.24 mm	Not Qualified	33554432 bit	2.97 V		e3	.00006 Amp	54.635 mm	100 ns
M27V160-150F6	STMicroelectronics	UVPROM	INDUSTRIAL	42	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP42,.6	8	EPROMs	2.54 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel	MATTE TIN	DUAL	R-CDIP-T42	3.63 V	5.71 mm	15.24 mm	Not Qualified	16777216 bit	2.97 V		e3	.00006 Amp	54.635 mm	150 ns
M27V800-110F1	STMicroelectronics	UVPROM	COMMERCIAL	42	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	COMMON	3.3	3.3	8	IN-LINE, WINDOW	DIP42,.6	16	EPROMs	2.54 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	TIN LEAD	DUAL	R-GDIP-T42	3.63 V	5.71 mm	15.24 mm	Not Qualified	8388608 bit	2.97 V		e0	.00002 Amp		110 ns
M27V322-150XF6	STMicroelectronics	UVPROM	INDUSTRIAL	42	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP42,.6		EPROMs	2.54 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	MATTE TIN	DUAL	R-CDIP-T42	3.465 V	5.72 mm	15.24 mm	Not Qualified	33554432 bit	3.135 V		e3	.00006 Amp	54.635 mm	150 ns
M27V322-120F1	STMicroelectronics	UVPROM	COMMERCIAL	42	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP42,.6		EPROMs	2.54 mm	70 Cel	3-STATE	2MX16	2M	0 Cel	MATTE TIN	DUAL	R-CDIP-T42	3.63 V	5.72 mm	15.24 mm	Not Qualified	33554432 bit	2.97 V		e3	.00006 Amp	54.635 mm	120 ns
M27V160-120XF6	STMicroelectronics	UVPROM	INDUSTRIAL	42	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP42,.6	8	EPROMs	2.54 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel	MATTE TIN	DUAL	R-CDIP-T42	3.465 V	5.71 mm	15.24 mm	Not Qualified	16777216 bit	3.135 V		e3	.00006 Amp	54.635 mm	120 ns
M27V160-100F1	STMicroelectronics	UVPROM	COMMERCIAL	42	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP42,.6	8	EPROMs	2.54 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	MATTE TIN	DUAL	R-CDIP-T42	3.63 V	5.71 mm	15.24 mm	Not Qualified	16777216 bit	2.97 V	CONFIGURABLE AS 1M X 16	e3	.00006 Amp	54.635 mm	100 ns
M27V322-100XF6	STMicroelectronics	UVPROM	INDUSTRIAL	42	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP42,.6		EPROMs	2.54 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	MATTE TIN	DUAL	R-CDIP-T42	3.465 V	5.72 mm	15.24 mm	Not Qualified	33554432 bit	3.135 V		e3	.00006 Amp	54.635 mm	100 ns
M27V160-120F1	STMicroelectronics	UVPROM	COMMERCIAL	42	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP42,.6	8	EPROMs	2.54 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	MATTE TIN	DUAL	R-CDIP-T42	3.63 V	5.71 mm	15.24 mm	Not Qualified	16777216 bit	2.97 V		e3	.00006 Amp	54.635 mm	120 ns
M27W800-150F6	STMicroelectronics	UVPROM	INDUSTRIAL	42	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words		3.3		16	IN-LINE, WINDOW		8		2.54 mm	85 Cel		512KX16	512K	-40 Cel		DUAL	R-GDIP-T42	3.6 V	5.97 mm	15.24 mm	Not Qualified	8388608 bit	2.7 V				54.635 mm	150 ns
M27V322-150F1	STMicroelectronics	UVPROM	COMMERCIAL	42	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP42,.6		EPROMs	2.54 mm	70 Cel	3-STATE	2MX16	2M	0 Cel	MATTE TIN	DUAL	R-CDIP-T42	3.63 V	5.72 mm	15.24 mm	Not Qualified	33554432 bit	2.97 V		e3	.00006 Amp	54.635 mm	150 ns
M27V160-150F1	STMicroelectronics	UVPROM	COMMERCIAL	42	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP42,.6	8	EPROMs	2.54 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	MATTE TIN	DUAL	R-CDIP-T42	3.63 V	5.71 mm	15.24 mm	Not Qualified	16777216 bit	2.97 V		e3	.00006 Amp	54.635 mm	150 ns
M27V800-150XF1	STMicroelectronics	UVPROM	COMMERCIAL	42	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP42,.6	8	EPROMs	2.54 mm	70 Cel	3-STATE	512KX16	512K	0 Cel	TIN LEAD	DUAL	R-GDIP-T42	3.465 V	5.72 mm	15.24 mm	Not Qualified	8388608 bit	3.135 V	CONFIGURABLE AS 512K X 16	e0	.00002 Amp	54.635 mm	150 ns
M27W800-100F6	STMicroelectronics	UVPROM	INDUSTRIAL	42	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words		3.3		16	IN-LINE, WINDOW		8		2.54 mm	85 Cel		512KX16	512K	-40 Cel		DUAL	R-GDIP-T42	3.6 V	5.97 mm	15.24 mm	Not Qualified	8388608 bit	2.7 V				54.635 mm	100 ns
M27V160-120F6	STMicroelectronics	UVPROM	INDUSTRIAL	42	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP42,.6	8	EPROMs	2.54 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel	MATTE TIN	DUAL	R-CDIP-T42	3.63 V	5.71 mm	15.24 mm	Not Qualified	16777216 bit	2.97 V		e3	.00006 Amp	54.635 mm	120 ns
M27V160-100XF1	STMicroelectronics	UVPROM	COMMERCIAL	42	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP42,.6	8	EPROMs	2.54 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	MATTE TIN	DUAL	R-CDIP-T42	3.465 V	5.71 mm	15.24 mm	Not Qualified	16777216 bit	3.135 V	CONFIGURABLE AS 1M X 16	e3	.00006 Amp	54.635 mm	100 ns
M27V160-150XF6	STMicroelectronics	UVPROM	INDUSTRIAL	42	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP42,.6	8	EPROMs	2.54 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel	MATTE TIN	DUAL	R-CDIP-T42	3.465 V	5.71 mm	15.24 mm	Not Qualified	16777216 bit	3.135 V		e3	.00006 Amp	54.635 mm	150 ns
M27V160-100F6	STMicroelectronics	UVPROM	INDUSTRIAL	42	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP42,.6	8	EPROMs	2.54 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel	MATTE TIN	DUAL	R-CDIP-T42	3.63 V	5.71 mm	15.24 mm	Not Qualified	16777216 bit	2.97 V		e3	.00006 Amp	54.635 mm	100 ns
M27V800-120F1	STMicroelectronics	UVPROM	COMMERCIAL	42	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP42,.6	8	EPROMs	2.54 mm	70 Cel	3-STATE	512KX16	512K	0 Cel	TIN LEAD	DUAL	R-GDIP-T42	3.63 V	5.72 mm	15.24 mm	Not Qualified	8388608 bit	2.97 V		e0	.00002 Amp	54.635 mm	120 ns
M27W800-120F6	STMicroelectronics	UVPROM	INDUSTRIAL	42	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words		3.3		16	IN-LINE, WINDOW		8		2.54 mm	85 Cel		512KX16	512K	-40 Cel		DUAL	R-GDIP-T42	3.6 V	5.97 mm	15.24 mm	Not Qualified	8388608 bit	2.7 V				54.635 mm	120 ns
M27V322-100F1	STMicroelectronics	UVPROM	COMMERCIAL	42	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP42,.6		EPROMs	2.54 mm	70 Cel	3-STATE	2MX16	2M	0 Cel	MATTE TIN	DUAL	R-CDIP-T42	3.63 V	5.72 mm	15.24 mm	Not Qualified	33554432 bit	2.97 V		e3	.00006 Amp	54.635 mm	100 ns
M27V800-100F6	STMicroelectronics		INDUSTRIAL	42	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE			30 mA	1048576 words	COMMON		3/3.3	8	IN-LINE	DIP42,.6		EPROMs	2.54 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T42				Not Qualified	8388608 bit			e0	.000015 Amp		100 ns
M27V322-150XF1	STMicroelectronics	UVPROM	COMMERCIAL	42	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP42,.6		EPROMs	2.54 mm	70 Cel	3-STATE	2MX16	2M	0 Cel	MATTE TIN	DUAL	R-CDIP-T42	3.465 V	5.72 mm	15.24 mm	Not Qualified	33554432 bit	3.135 V		e3	.00006 Amp	54.635 mm	150 ns
M27V160-110F1	STMicroelectronics	UVPROM	COMMERCIAL	42	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	3.3	3.3	8	IN-LINE, WINDOW	DIP42,.6	16	EPROMs	2.54 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	MATTE TIN	DUAL	R-GDIP-T42	3.63 V	5.71 mm	15.24 mm	Not Qualified	16777216 bit	2.97 V		e3	.00002 Amp		110 ns
M27V800-150F1	STMicroelectronics	UVPROM	COMMERCIAL	42	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP42,.6	8	EPROMs	2.54 mm	70 Cel	3-STATE	512KX16	512K	0 Cel	TIN LEAD	DUAL	R-GDIP-T42	3.63 V	5.72 mm	15.24 mm	Not Qualified	8388608 bit	2.97 V		e0	.00002 Amp	54.635 mm	150 ns
M27V322-100XF1	STMicroelectronics	UVPROM	COMMERCIAL	42	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP42,.6		EPROMs	2.54 mm	70 Cel	3-STATE	2MX16	2M	0 Cel	MATTE TIN	DUAL	R-CDIP-T42	3.465 V	5.72 mm	15.24 mm	Not Qualified	33554432 bit	3.135 V		e3	.00006 Amp	54.635 mm	100 ns
M27V160-100XF6	STMicroelectronics	UVPROM	INDUSTRIAL	42	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP42,.6	8	EPROMs	2.54 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel	MATTE TIN	DUAL	R-CDIP-T42	3.465 V	5.71 mm	15.24 mm	Not Qualified	16777216 bit	3.135 V		e3	.00006 Amp	54.635 mm	100 ns
M27V800-120F6	STMicroelectronics		INDUSTRIAL	42	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE			30 mA	1048576 words	COMMON		3/3.3	8	IN-LINE	DIP42,.6		EPROMs	2.54 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T42				Not Qualified	8388608 bit			e0	.000015 Amp		120 ns
M27V322-150F6	STMicroelectronics	UVPROM	INDUSTRIAL	42	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP42,.6		EPROMs	2.54 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	MATTE TIN	DUAL	R-CDIP-T42	3.63 V	5.72 mm	15.24 mm	Not Qualified	33554432 bit	2.97 V		e3	.00006 Amp	54.635 mm	150 ns
M27V160-110XF1	STMicroelectronics	UVPROM	COMMERCIAL	42	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	3.3	3.3	8	IN-LINE, WINDOW	DIP42,.6	16	EPROMs	2.54 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	MATTE TIN	DUAL	R-GDIP-T42	3.465 V	5.71 mm	15.24 mm	Not Qualified	16777216 bit	3.135 V		e3	.00002 Amp		110 ns
M27V322-120XF1	STMicroelectronics	UVPROM	COMMERCIAL	42	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP42,.6		EPROMs	2.54 mm	70 Cel	3-STATE	2MX16	2M	0 Cel	MATTE TIN	DUAL	R-CDIP-T42	3.465 V	5.72 mm	15.24 mm	Not Qualified	33554432 bit	3.135 V		e3	.00006 Amp	54.635 mm	120 ns
M27V322-120XF6	STMicroelectronics	UVPROM	INDUSTRIAL	42	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP42,.6		EPROMs	2.54 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	MATTE TIN	DUAL	R-CDIP-T42	3.465 V	5.72 mm	15.24 mm	Not Qualified	33554432 bit	3.135 V		e3	.00006 Amp	54.635 mm	120 ns
M27V800-120XF1	STMicroelectronics	UVPROM	COMMERCIAL	42	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP42,.6	8	EPROMs	2.54 mm	70 Cel	3-STATE	512KX16	512K	0 Cel	TIN LEAD	DUAL	R-GDIP-T42	3.465 V	5.72 mm	15.24 mm	Not Qualified	8388608 bit	3.135 V	CONFIGURABLE AS 512K X 16	e0	.00002 Amp	54.635 mm	120 ns
M27V800-150F6	STMicroelectronics		INDUSTRIAL	42	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE			30 mA	1048576 words	COMMON		3/3.3	8	IN-LINE	DIP42,.6		EPROMs	2.54 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T42				Not Qualified	8388608 bit			e0	.000015 Amp		150 ns
M27V160-120XF1	STMicroelectronics	UVPROM	COMMERCIAL	42	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP42,.6	8	EPROMs	2.54 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	MATTE TIN	DUAL	R-CDIP-T42	3.465 V	5.71 mm	15.24 mm	Not Qualified	16777216 bit	3.135 V		e3	.00006 Amp	54.635 mm	120 ns
M27V800-100F1	STMicroelectronics	UVPROM	COMMERCIAL	42	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP42,.6	8	EPROMs	2.54 mm	70 Cel	3-STATE	512KX16	512K	0 Cel	TIN LEAD	DUAL	R-GDIP-T42	3.63 V	5.72 mm	15.24 mm	Not Qualified	8388608 bit	2.97 V	CONFIGURABLE AS 512K X 16	e0	.00002 Amp	54.635 mm	100 ns
M27V322-120F6	STMicroelectronics	UVPROM	INDUSTRIAL	42	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP42,.6		EPROMs	2.54 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	MATTE TIN	DUAL	R-CDIP-T42	3.63 V	5.72 mm	15.24 mm	Not Qualified	33554432 bit	2.97 V		e3	.00006 Amp	54.635 mm	120 ns
M27C800-100F1	STMicroelectronics	UVPROM	COMMERCIAL	42	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	524288 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP42,.6	8	EPROMs	2.54 mm	70 Cel	3-STATE	512KX16	512K	0 Cel	TIN LEAD	DUAL	R-GDIP-T42	5.5 V	5.97 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V		e0	.00005 Amp	54.635 mm	100 ns
M27C322-80F6	STMicroelectronics	UVPROM	INDUSTRIAL	42	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	2097152 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP42,.6		EPROMs	2.54 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	MATTE TIN	DUAL	R-CDIP-T42	5.5 V	5.71 mm	15.24 mm	Not Qualified	33554432 bit	4.5 V		e3	.0001 Amp	54.635 mm	80 ns
M27C800-100XF1	STMicroelectronics	UVPROM	COMMERCIAL	42	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	524288 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP42,.6	8	EPROMs	2.54 mm	70 Cel	3-STATE	512KX16	512K	0 Cel	MATTE TIN	DUAL	R-GDIP-T42	5.25 V	5.97 mm	15.24 mm	Not Qualified	8388608 bit	4.75 V		e3	.00005 Amp	54.635 mm	100 ns
M27C322-80F3	STMicroelectronics	UVPROM	AUTOMOTIVE	42	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	2097152 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP42,.6		EPROMs	2.54 mm	125 Cel	3-STATE	2MX16	2M	-40 Cel	MATTE TIN	DUAL	R-CDIP-T42	5.5 V	5.71 mm	15.24 mm	Not Qualified	33554432 bit	4.5 V		e3	.0001 Amp	54.635 mm	80 ns
M27C800-120F1	STMicroelectronics	UVPROM	COMMERCIAL	42	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	524288 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP42,.6	8	EPROMs	2.54 mm	70 Cel	3-STATE	512KX16	512K	0 Cel	MATTE TIN	DUAL	R-GDIP-T42	5.5 V	5.97 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V		e3	.00005 Amp	54.635 mm	120 ns
M27C800-70XF6	STMicroelectronics	UVPROM	INDUSTRIAL	42	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	524288 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP42,.6	8	EPROMs	2.54 mm	85 Cel	3-STATE	512KX16	512K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T42	5.25 V	5.97 mm	15.24 mm	Not Qualified	8388608 bit	4.75 V		e3	.00005 Amp	54.635 mm	70 ns
M27C160-120F1	STMicroelectronics	UVPROM	COMMERCIAL	42	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	1048576 words	COMMON	5	5	16	IN-LINE	DIP42,.6	8	EPROMs	2.54 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	MATTE TIN	DUAL	R-CDIP-T42	5.5 V	5.71 mm	15.24 mm	Not Qualified	16777216 bit	4.5 V	USER CONFIGURABLE AS 1M X 16	e3	.0001 Amp	54.635 mm	120 ns
M27C160-90F6	STMicroelectronics	UVPROM	INDUSTRIAL	42	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	1048576 words	COMMON	5	5	16	IN-LINE	DIP42,.6	8	EPROMs	2.54 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel	MATTE TIN	DUAL	R-CDIP-T42	5.5 V	5.71 mm	15.24 mm	Not Qualified	16777216 bit	4.5 V	USER CONFIGURABLE AS 1M X 16	e3	.0001 Amp	54.635 mm	90 ns

EPROM

EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.

EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.

EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.