DFP EPROM 21

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Standby Current	Maximum Access Time	Programming Voltage (V)
5962-9065802KB	STMicroelectronics	UVPROM	MILITARY	24	DFP	RECTANGULAR	CERAMIC, GLASS-SEALED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		4096 words		5		8	FLATPACK				125 Cel		4KX8	4K	-55 Cel	TIN LEAD	DUAL	R-GDFP-F24	5.5 V	Not Qualified	32768 bit	4.5 V	e0		55 ns
5962-9065801KB	STMicroelectronics	UVPROM	MILITARY	24	DFP	RECTANGULAR	CERAMIC, GLASS-SEALED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		4096 words		5		8	FLATPACK				125 Cel		4KX8	4K	-55 Cel	TIN LEAD	DUAL	R-GDFP-F24	5.5 V	Not Qualified	32768 bit	4.5 V	e0		70 ns
5962-8765004KB	STMicroelectronics	UVPROM	MILITARY	24	DFP	RECTANGULAR	CERAMIC, GLASS-SEALED	YES	1	CMOS	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS		2048 words		5		8	FLATPACK				125 Cel		2KX8	2K	-55 Cel	TIN LEAD	DUAL	R-GDFP-F24	5.5 V	Not Qualified	16384 bit	4.5 V	e0		45 ns
5962-9065802KA	STMicroelectronics	UVPROM	MILITARY	24	DFP	RECTANGULAR	CERAMIC, GLASS-SEALED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		4096 words		5		8	FLATPACK				125 Cel		4KX8	4K	-55 Cel	TIN LEAD	DUAL	R-GDFP-F24	5.5 V	Not Qualified	32768 bit	4.5 V	e0		55 ns
WS57C45-35HMB	STMicroelectronics		MILITARY	24	DFP	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	FLAT			93 mA	2048 words	COMMON	5	5	8	FLATPACK	FL24,.4	EPROMs	1.27 mm	125 Cel	REGISTERED	2KX8	2K	-55 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDFP-F24		Not Qualified	16384 bit		e0	.03 Amp	35 ns	13.5
5962-8765004KA	STMicroelectronics	UVPROM	MILITARY	24	DFP	RECTANGULAR	CERAMIC, GLASS-SEALED	YES	1	CMOS	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS		2048 words		5		8	FLATPACK				125 Cel		2KX8	2K	-55 Cel	TIN LEAD	DUAL	R-GDFP-F24	5.5 V	Not Qualified	16384 bit	4.5 V	e0		45 ns
5962-9065804KC	STMicroelectronics	UVPROM	MILITARY	24	DFP	RECTANGULAR	CERAMIC, GLASS-SEALED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		4096 words		5		8	FLATPACK				125 Cel		4KX8	4K	-55 Cel	GOLD	DUAL	R-GDFP-F24	5.5 V	Not Qualified	32768 bit	4.5 V	e4		35 ns
5962-9065803KB	STMicroelectronics	UVPROM	MILITARY	24	DFP	RECTANGULAR	CERAMIC, GLASS-SEALED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		4096 words		5		8	FLATPACK				125 Cel		4KX8	4K	-55 Cel	TIN LEAD	DUAL	R-GDFP-F24	5.5 V	Not Qualified	32768 bit	4.5 V	e0		45 ns
5962-9065803KA	STMicroelectronics	UVPROM	MILITARY	24	DFP	RECTANGULAR	CERAMIC, GLASS-SEALED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		4096 words		5		8	FLATPACK				125 Cel		4KX8	4K	-55 Cel	TIN LEAD	DUAL	R-GDFP-F24	5.5 V	Not Qualified	32768 bit	4.5 V	e0		45 ns
5962-9065801KC	STMicroelectronics	UVPROM	MILITARY	24	DFP	RECTANGULAR	CERAMIC, GLASS-SEALED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		4096 words		5		8	FLATPACK				125 Cel		4KX8	4K	-55 Cel	GOLD	DUAL	R-GDFP-F24	5.5 V	Not Qualified	32768 bit	4.5 V	e4		70 ns
5962-9065803KC	STMicroelectronics	UVPROM	MILITARY	24	DFP	RECTANGULAR	CERAMIC, GLASS-SEALED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		4096 words		5		8	FLATPACK				125 Cel		4KX8	4K	-55 Cel	GOLD	DUAL	R-GDFP-F24	5.5 V	Not Qualified	32768 bit	4.5 V	e4		45 ns
5962-8765004KC	STMicroelectronics	UVPROM	MILITARY	24	DFP	RECTANGULAR	CERAMIC, GLASS-SEALED	YES	1	CMOS	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS		2048 words		5		8	FLATPACK				125 Cel		2KX8	2K	-55 Cel	TIN LEAD	DUAL	R-GDFP-F24	5.5 V	Not Qualified	16384 bit	4.5 V	e0		45 ns
5962-9065801KX	STMicroelectronics	UVPROM	MILITARY	24	DFP	RECTANGULAR	CERAMIC, GLASS-SEALED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		4096 words		5		8	FLATPACK				125 Cel		4KX8	4K	-55 Cel	TIN LEAD	DUAL	R-GDFP-F24	5.5 V	Not Qualified	32768 bit	4.5 V	e0		70 ns
5962-9065803KX	STMicroelectronics	UVPROM	MILITARY	24	DFP	RECTANGULAR	CERAMIC, GLASS-SEALED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		4096 words		5		8	FLATPACK				125 Cel		4KX8	4K	-55 Cel	TIN LEAD	DUAL	R-GDFP-F24	5.5 V	Not Qualified	32768 bit	4.5 V	e0		45 ns
5962-9065804KX	STMicroelectronics	UVPROM	MILITARY	24	DFP	RECTANGULAR	CERAMIC, GLASS-SEALED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		4096 words		5		8	FLATPACK				125 Cel		4KX8	4K	-55 Cel	TIN LEAD	DUAL	R-GDFP-F24	5.5 V	Not Qualified	32768 bit	4.5 V	e0		35 ns
5962-9065804KA	STMicroelectronics	UVPROM	MILITARY	24	DFP	RECTANGULAR	CERAMIC, GLASS-SEALED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		4096 words		5		8	FLATPACK				125 Cel		4KX8	4K	-55 Cel	TIN LEAD	DUAL	R-GDFP-F24	5.5 V	Not Qualified	32768 bit	4.5 V	e0		35 ns
5962-9065804KB	STMicroelectronics	UVPROM	MILITARY	24	DFP	RECTANGULAR	CERAMIC, GLASS-SEALED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		4096 words		5		8	FLATPACK				125 Cel		4KX8	4K	-55 Cel	TIN LEAD	DUAL	R-GDFP-F24	5.5 V	Not Qualified	32768 bit	4.5 V	e0		35 ns
5962-8765004KX	STMicroelectronics	UVPROM	MILITARY	24	DFP	RECTANGULAR	CERAMIC, GLASS-SEALED	YES	1	CMOS	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS		2048 words		5		8	FLATPACK				125 Cel		2KX8	2K	-55 Cel		DUAL	R-GDFP-F24	5.5 V	Not Qualified	16384 bit	4.5 V			45 ns
5962-9065802KC	STMicroelectronics	UVPROM	MILITARY	24	DFP	RECTANGULAR	CERAMIC, GLASS-SEALED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		4096 words		5		8	FLATPACK				125 Cel		4KX8	4K	-55 Cel	GOLD	DUAL	R-GDFP-F24	5.5 V	Not Qualified	32768 bit	4.5 V	e4		55 ns
5962-9065802KX	STMicroelectronics	UVPROM	MILITARY	24	DFP	RECTANGULAR	CERAMIC, GLASS-SEALED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		4096 words		5		8	FLATPACK				125 Cel		4KX8	4K	-55 Cel	TIN LEAD	DUAL	R-GDFP-F24	5.5 V	Not Qualified	32768 bit	4.5 V	e0		55 ns
5962-9065801KA	STMicroelectronics	UVPROM	MILITARY	24	DFP	RECTANGULAR	CERAMIC, GLASS-SEALED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		4096 words		5		8	FLATPACK				125 Cel		4KX8	4K	-55 Cel	TIN LEAD	DUAL	R-GDFP-F24	5.5 V	Not Qualified	32768 bit	4.5 V	e0		70 ns

EPROM

EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.

EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.

EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.