QCCJ EPROM 157

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
M27C4002-90J1X	STMicroelectronics	UVPROM	COMMERCIAL	44	QCCJ	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	70 mA	262144 words	COMMON	5	5	16	CHIP CARRIER	LDCC44,.7SQ	EPROMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	MATTE TIN	QUAD	S-CQCC-J44		5.5 V	4.83 mm	16.51 mm	Not Qualified	4194304 bit	4.5 V		e3			.0001 Amp	16.51 mm	90 ns
M27C4002-12J6	STMicroelectronics	UVPROM	INDUSTRIAL	44	QCCJ	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	70 mA	262144 words	COMMON	5	5	16	CHIP CARRIER	LDCC44,.7SQ	EPROMs	1.27 mm	85 Cel	3-STATE	256KX16	256K	-40 Cel	MATTE TIN	QUAD	S-CQCC-J44		5.5 V	4.83 mm	16.51 mm	Not Qualified	4194304 bit	4.5 V		e3			.0001 Amp	16.51 mm	120 ns
M27C4002-80XJ1X	STMicroelectronics	UVPROM	COMMERCIAL	44	QCCJ	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	70 mA	262144 words	COMMON	5	5	16	CHIP CARRIER	LDCC44,.7SQ	EPROMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	MATTE TIN	QUAD	S-CQCC-J44		5.25 V	4.83 mm	16.51 mm	Not Qualified	4194304 bit	4.75 V		e3			.0001 Amp	16.51 mm	80 ns
M27C4002-10J6XTR	STMicroelectronics		INDUSTRIAL	44	QCCJ	SQUARE	CERAMIC	YES		CMOS	J BEND			70 mA	262144 words	COMMON	5	5	16	CHIP CARRIER	LDCC44,.7SQ	EPROMs	1.27 mm	85 Cel	3-STATE	256KX16	256K	-40 Cel	Matte Tin (Sn)	QUAD	S-XQCC-J44						4194304 bit			e3			.0001 Amp		100 ns
M27C4002-10J1TR	STMicroelectronics	UVPROM	COMMERCIAL	44	QCCJ	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	70 mA	262144 words	COMMON	5	5	16	CHIP CARRIER	LDCC44,.7SQ	EPROMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	MATTE TIN	QUAD	S-CQCC-J44		5.5 V	4.83 mm	16.51 mm	Not Qualified	4194304 bit	4.5 V		e3			.0001 Amp	16.51 mm	100 ns
M27C4002-60J1TR	STMicroelectronics	UVPROM	COMMERCIAL	44	QCCJ	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	70 mA	262144 words	COMMON	5	5	16	CHIP CARRIER	LDCC44,.7SQ	EPROMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	MATTE TIN	QUAD	S-CQCC-J44		5.5 V	4.83 mm	16.51 mm	Not Qualified	4194304 bit	4.5 V		e3			.0001 Amp	16.51 mm	60 ns
M27C4002-10J1X	STMicroelectronics	UVPROM	COMMERCIAL	44	QCCJ	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	70 mA	262144 words	COMMON	5	5	16	CHIP CARRIER	LDCC44,.7SQ	EPROMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	MATTE TIN	QUAD	S-CQCC-J44		5.5 V	4.83 mm	16.51 mm	Not Qualified	4194304 bit	4.5 V		e3			.0001 Amp	16.51 mm	100 ns
M27C4002-90XJ6	STMicroelectronics	UVPROM	INDUSTRIAL	44	QCCJ	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	70 mA	262144 words	COMMON	5	5	16	CHIP CARRIER	LDCC44,.7SQ	EPROMs	1.27 mm	85 Cel	3-STATE	256KX16	256K	-40 Cel	MATTE TIN	QUAD	S-CQCC-J44		5.25 V	4.83 mm	16.51 mm	Not Qualified	4194304 bit	4.75 V		e3			.0001 Amp	16.51 mm	90 ns
M27C4002-80J1X	STMicroelectronics	UVPROM	COMMERCIAL	44	QCCJ	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	70 mA	262144 words	COMMON	5	5	16	CHIP CARRIER	LDCC44,.7SQ	EPROMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	MATTE TIN	QUAD	S-CQCC-J44		5.5 V	4.83 mm	16.51 mm	Not Qualified	4194304 bit	4.5 V		e3			.0001 Amp	16.51 mm	80 ns
M27C4002-45XJ6X	STMicroelectronics	UVPROM	INDUSTRIAL	44	QCCJ	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	70 mA	262144 words	COMMON	5	5	16	CHIP CARRIER	LDCC44,.7SQ	EPROMs	1.27 mm	85 Cel	3-STATE	256KX16	256K	-40 Cel	MATTE TIN	QUAD	S-CQCC-J44		5.25 V	4.83 mm	16.51 mm	Not Qualified	4194304 bit	4.75 V		e3			.0001 Amp	16.51 mm	45 ns
EPC1441LI20N	Altera	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	SERIAL	SYNCHRONOUS	30 mA	440800 words		3.3	3.3/5	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs	1.27 mm	85 Cel	3-STATE	440800X1	440800	-40 Cel	MATTE TIN	QUAD	S-PQCC-J20	3	3.6 V	4.572 mm	8.9662 mm	Not Qualified	440800 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e3	30	245	.00006 Amp	8.9662 mm		3.3
EPC1LI20N	Altera	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	SERIAL	SYNCHRONOUS	50 mA	1046496 words		3.3	3.3/5	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs	1.27 mm	85 Cel	3-STATE	1046496X1	1046496	-40 Cel	MATTE TIN	QUAD	S-PQCC-J20	3	3.6 V	4.572 mm	8.9662 mm	Not Qualified	1046496 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e3	30	245	.0001 Amp	8.9662 mm		3.3
EPC1LI20	Altera	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	SERIAL	SYNCHRONOUS	50 mA	1046496 words		3.3	5	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs	1.27 mm	85 Cel	3-STATE	1046496X1	1046496	-40 Cel	TIN LEAD	QUAD	S-PQCC-J20	1	3.6 V	4.572 mm	8.9662 mm	Not Qualified	1046496 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e0	20	220	.0001 Amp	8.9662 mm		3.3

EPROM

EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.

EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.

EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.