TQFP EPROM 8

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Programming Voltage (V)
EPC2TI32N	Intel	CONFIGURATION MEMORY	INDUSTRIAL	32	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	50 mA	1695680 words	3.3	3.3/5	1	FLATPACK, THIN PROFILE	TQFP32,.35SQ,32	Flash Memories	.8 mm	85 Cel	3-STATE	1695680X1	1695680	-40 Cel	MATTE TIN	QUAD	S-PQFP-G32	3	3.6 V	1.2 mm	7 mm	Not Qualified	1695680 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e3			.0001 Amp	7 mm	3.3
EPC2TC32N	Intel	CONFIGURATION MEMORY	COMMERCIAL	32	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	50 mA	1695680 words	3.3	3.3/5	1	FLATPACK, THIN PROFILE	TQFP32,.35SQ,32	Flash Memories	.8 mm	70 Cel	3-STATE	1695680X1	1695680	0 Cel	MATTE TIN	QUAD	S-PQFP-G32	3	3.6 V	1.2 mm	7 mm	Not Qualified	1695680 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e3	30	260	.0001 Amp	7 mm	3.3
EPC1441TC32N	Intel	CONFIGURATION MEMORY	COMMERCIAL	32	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	30 mA	440800 words	3.3	3.3/5	1	FLATPACK, THIN PROFILE	TQFP32,.35SQ,32	OTP ROMs	.8 mm	70 Cel	3-STATE	440800X1	440800	0 Cel	MATTE TIN	QUAD	S-PQFP-G32	3	3.6 V	1.2 mm	7 mm	Not Qualified	440800 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e3			.00006 Amp	7 mm	3.3
EPC2TI32	Intel	CONFIGURATION MEMORY	INDUSTRIAL	32	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	50 mA	1695680 words	3.3	3.3/5	1	FLATPACK, THIN PROFILE	TQFP32,.35SQ,32	Flash Memories	.8 mm	85 Cel	3-STATE	1695680X1	1695680	-40 Cel	TIN LEAD	QUAD	S-PQFP-G32	3	3.6 V	1.2 mm	7 mm	Not Qualified	1695680 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e0			.0001 Amp	7 mm	3.3
EPC2TC32	Intel	CONFIGURATION MEMORY		32	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	50 mA	1695680 words	3.3	3.3/5	1	FLATPACK, THIN PROFILE	TQFP32,.35SQ,32	Flash Memories	.8 mm	70 Cel	3-STATE	1695680X1	1695680	0 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQFP-G32	3	3.6 V	1.2 mm	7 mm	Not Qualified	1695680 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e0	30	235	.0001 Amp	7 mm	3.3
EPC1441TI32N	Altera	CONFIGURATION MEMORY	INDUSTRIAL	32	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	30 mA	440800 words	3.3	3.3/5	1	FLATPACK, THIN PROFILE	TQFP32,.35SQ,32	OTP ROMs	.8 mm	85 Cel	3-STATE	440800X1	440800	-40 Cel	MATTE TIN	QUAD	S-PQFP-G32	3	3.6 V	1.2 mm	7 mm	Not Qualified	440800 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e3	30	260	.00006 Amp	7 mm	3.3
EPC1441TI32	Altera	CONFIGURATION MEMORY	INDUSTRIAL	32	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	30 mA	440800 words	3.3	3.3/5	1	FLATPACK, THIN PROFILE	TQFP32,.35SQ,32	OTP ROMs	.8 mm	85 Cel	3-STATE	440800X1	440800	-40 Cel	TIN LEAD	QUAD	S-PQFP-G32	3	3.6 V	1.2 mm	7 mm	Not Qualified	440800 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e0	20	235	.00006 Amp	7 mm	3.3
EPC1441TC32	Altera	CONFIGURATION MEMORY	COMMERCIAL	32	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	30 mA	440800 words	3.3	3.3/5	1	FLATPACK, THIN PROFILE	TQFP32,.35SQ,32	OTP ROMs	.8 mm	70 Cel	3-STATE	440800X1	440800	0 Cel	TIN LEAD	QUAD	S-PQFP-G32	3	3.6 V	1.2 mm	7 mm	Not Qualified	440800 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e0	20	235	.00006 Amp	7 mm	3.3

EPROM

EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.

EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.

EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.