WQCCJ EPROM 11

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
WS57C256F-35L	STMicroelectronics	UVPROM	COMMERCIAL	32	WQCCJ	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LDCC32,.5X.6	EPROMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	TIN LEAD	QUAD	R-CQCC-J32		5.5 V	4.06 mm	11.24 mm	Not Qualified	262144 bit	4.5 V	e0	.0002 Amp	13.945 mm	35 ns	12.75
WS57C256F-45L	STMicroelectronics	UVPROM	COMMERCIAL	32	WQCCJ	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		32768 words		5		8	CHIP CARRIER, WINDOW			1.27 mm	70 Cel		32KX8	32K	0 Cel		QUAD	R-CQCC-J32		5.5 V	4.06 mm	11.24 mm	Not Qualified	262144 bit	4.5 V			13.945 mm	45 ns
WS57C256F-55L	STMicroelectronics	UVPROM	COMMERCIAL	32	WQCCJ	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LDCC32,.5X.6	EPROMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	MATTE TIN	QUAD	R-CQCC-J32		5.5 V	4.06 mm	11.24 mm	Not Qualified	262144 bit	4.5 V	e3	.0002 Amp	13.945 mm	55 ns	12.75
AT27C010-15KC	Atmel	UVPROM	COMMERCIAL	32	WQCCJ	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	40 mA	131072 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LDCC32,.5X.6	EPROMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	TIN LEAD	QUAD	R-CQCC-J32	1	5.5 V	4.24 mm	11.55 mm	Not Qualified	1048576 bit	4.5 V	e0	.00001 Amp	14.1 mm	150 ns
WS57C71C-70L	STMicroelectronics	UVPROM	COMMERCIAL	32	WQCCJ	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	107 mA	32768 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LDCC32,.5X.6	EPROMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	TIN LEAD	QUAD	R-CQCC-J32		5.5 V	4.06 mm	11.24 mm	Not Qualified	262144 bit	4.5 V	e0	.02 Amp	13.945 mm	70 ns
WS57C71C-55L	STMicroelectronics	UVPROM	COMMERCIAL	32	WQCCJ	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	123 mA	32768 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LDCC32,.5X.6	EPROMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	TIN LEAD	QUAD	R-CQCC-J32		5.5 V	4.06 mm	11.24 mm	Not Qualified	262144 bit	4.5 V	e0	.02 Amp	13.945 mm	55 ns
WS57C51C-55L	STMicroelectronics	UVPROM	COMMERCIAL	32	WQCCJ	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	123 mA	16384 words		5	5	8	CHIP CARRIER, WINDOW	LDCC32,.5X.6	EPROMs	1.27 mm	70 Cel	3-STATE	16KX8	16K	0 Cel	TIN LEAD	QUAD	R-CQCC-J32		5.5 V	4.06 mm	11.24 mm	Not Qualified	131072 bit	4.5 V	e0		13.945 mm	55 ns
WS57C71C-35L	STMicroelectronics	UVPROM	COMMERCIAL	32	WQCCJ	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	164 mA	32768 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LDCC32,.5X.6	EPROMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	TIN LEAD	QUAD	R-CQCC-J32		5.5 V	4.06 mm	11.24 mm	Not Qualified	262144 bit	4.5 V	e0	.02 Amp	13.945 mm	35 ns
WS57C128FB-45L	STMicroelectronics	UVPROM	COMMERCIAL	32	WQCCJ	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	139 mA	16384 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LDCC32,.5X.6	EPROMs	1.27 mm	70 Cel	3-STATE	16KX8	16K	0 Cel	TIN LEAD	QUAD	R-CQCC-J32		5.5 V	4.06 mm	11.24 mm	Not Qualified	131072 bit	4.5 V	e0	.0005 Amp	13.945 mm	45 ns	12.5
WS57C51C-45L	STMicroelectronics	UVPROM	COMMERCIAL	32	WQCCJ	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	139 mA	16384 words		5	5	8	CHIP CARRIER, WINDOW	LDCC32,.5X.6	EPROMs	1.27 mm	70 Cel	3-STATE	16KX8	16K	0 Cel	TIN LEAD	QUAD	R-CQCC-J32		5.5 V	4.06 mm	11.24 mm	Not Qualified	131072 bit	4.5 V	e0		13.945 mm	45 ns
M27C4002J	STMicroelectronics	UVPROM	INDUSTRIAL	44	WQCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		262144 words		5		16	CHIP CARRIER, WINDOW				85 Cel		256KX16	256K	-40 Cel		QUAD	S-PQCC-J44		5.5 V			Not Qualified	4194304 bit	4.5 V				120 ns

EPROM

EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.

EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.

EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.