Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Package Shape | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Output Characteristics | Organization | No. of Words Code | Minimum Operating Temperature | Terminal Finish | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Standby Current | Length | Maximum Access Time | Programming Voltage (V) |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Intel |
CONFIGURATION MEMORY |
INDUSTRIAL |
32 |
TQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
50 mA |
1695680 words |
3.3 |
3.3/5 |
1 |
FLATPACK, THIN PROFILE |
TQFP32,.35SQ,32 |
Flash Memories |
.8 mm |
85 Cel |
3-STATE |
1695680X1 |
1695680 |
-40 Cel |
MATTE TIN |
QUAD |
S-PQFP-G32 |
3 |
3.6 V |
1.2 mm |
7 mm |
Not Qualified |
1695680 bit |
3 V |
IT ALSO REQUIRES 5V NOMINAL SUPPLY |
e3 |
.0001 Amp |
7 mm |
3.3 |
||||||||
|
Intel |
CONFIGURATION MEMORY |
COMMERCIAL |
20 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
SERIAL |
SYNCHRONOUS |
50 mA |
1695680 words |
3.3 |
3.3/5 |
1 |
CHIP CARRIER |
LCC20,.39SQ |
Flash Memories |
1.27 mm |
70 Cel |
3-STATE |
1695680X1 |
1695680 |
0 Cel |
MATTE TIN |
QUAD |
S-PQCC-J20 |
3 |
3.6 V |
4.572 mm |
8.9662 mm |
Not Qualified |
1695680 bit |
3 V |
IT ALSO REQUIRES 5V NOMINAL SUPPLY |
e3 |
30 |
245 |
.0001 Amp |
8.9662 mm |
3.3 |
||||||
|
Intel |
CONFIGURATION MEMORY |
INDUSTRIAL |
20 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
SERIAL |
SYNCHRONOUS |
50 mA |
1695680 words |
3.3 |
3.3/5 |
1 |
CHIP CARRIER |
LCC20,.39SQ |
Flash Memories |
1.27 mm |
85 Cel |
3-STATE |
1695680X1 |
1695680 |
-40 Cel |
MATTE TIN |
QUAD |
S-PQCC-J20 |
3 |
3.6 V |
4.572 mm |
8.9662 mm |
Not Qualified |
1695680 bit |
3 V |
IT ALSO REQUIRES 5V NOMINAL SUPPLY |
e3 |
.0001 Amp |
8.9662 mm |
3.3 |
||||||||
Intel |
CONFIGURATION MEMORY |
20 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
SERIAL |
SYNCHRONOUS |
50 mA |
1695680 words |
3.3 |
3.3/5 |
1 |
CHIP CARRIER |
LDCC20,.4SQ |
Flash Memories |
1.27 mm |
85 Cel |
3-STATE |
1695680X1 |
1695680 |
-40 Cel |
TIN LEAD |
QUAD |
S-PQCC-J20 |
1 |
3.6 V |
4.572 mm |
8.9662 mm |
Not Qualified |
1695680 bit |
3 V |
IT ALSO REQUIRES 5V NOMINAL SUPPLY |
e0 |
.0001 Amp |
8.9662 mm |
3.3 |
||||||||||
|
Intel |
CONFIGURATION MEMORY |
COMMERCIAL |
32 |
TQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
50 mA |
1695680 words |
3.3 |
3.3/5 |
1 |
FLATPACK, THIN PROFILE |
TQFP32,.35SQ,32 |
Flash Memories |
.8 mm |
70 Cel |
3-STATE |
1695680X1 |
1695680 |
0 Cel |
MATTE TIN |
QUAD |
S-PQFP-G32 |
3 |
3.6 V |
1.2 mm |
7 mm |
Not Qualified |
1695680 bit |
3 V |
IT ALSO REQUIRES 5V NOMINAL SUPPLY |
e3 |
30 |
260 |
.0001 Amp |
7 mm |
3.3 |
||||||
|
Intel |
CONFIGURATION MEMORY |
COMMERCIAL |
32 |
TQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
30 mA |
440800 words |
3.3 |
3.3/5 |
1 |
FLATPACK, THIN PROFILE |
TQFP32,.35SQ,32 |
OTP ROMs |
.8 mm |
70 Cel |
3-STATE |
440800X1 |
440800 |
0 Cel |
MATTE TIN |
QUAD |
S-PQFP-G32 |
3 |
3.6 V |
1.2 mm |
7 mm |
Not Qualified |
440800 bit |
3 V |
IT ALSO REQUIRES 5V NOMINAL SUPPLY |
e3 |
.00006 Amp |
7 mm |
3.3 |
||||||||
Intel |
CONFIGURATION MEMORY |
INDUSTRIAL |
32 |
TQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
50 mA |
1695680 words |
3.3 |
3.3/5 |
1 |
FLATPACK, THIN PROFILE |
TQFP32,.35SQ,32 |
Flash Memories |
.8 mm |
85 Cel |
3-STATE |
1695680X1 |
1695680 |
-40 Cel |
TIN LEAD |
QUAD |
S-PQFP-G32 |
3 |
3.6 V |
1.2 mm |
7 mm |
Not Qualified |
1695680 bit |
3 V |
IT ALSO REQUIRES 5V NOMINAL SUPPLY |
e0 |
.0001 Amp |
7 mm |
3.3 |
|||||||||
Intel |
CONFIGURATION MEMORY |
20 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
SERIAL |
SYNCHRONOUS |
50 mA |
1695680 words |
3.3 |
3.3/5 |
1 |
CHIP CARRIER |
LDCC20,.4SQ |
Flash Memories |
1.27 mm |
70 Cel |
3-STATE |
1695680X1 |
1695680 |
0 Cel |
TIN LEAD |
QUAD |
S-PQCC-J20 |
1 |
3.6 V |
4.572 mm |
8.9662 mm |
Not Qualified |
1695680 bit |
3 V |
IT ALSO REQUIRES 5V NOMINAL SUPPLY |
e0 |
.0001 Amp |
8.9662 mm |
3.3 |
||||||||||
|
Intel |
CONFIGURATION MEMORY |
COMMERCIAL |
20 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
SERIAL |
SYNCHRONOUS |
30 mA |
440800 words |
3.3 |
3.3/5 |
1 |
CHIP CARRIER |
LCC20,.39SQ |
OTP ROMs |
1.27 mm |
70 Cel |
3-STATE |
440800X1 |
440800 |
0 Cel |
MATTE TIN |
QUAD |
S-PQCC-J20 |
3 |
3.6 V |
4.572 mm |
8.9662 mm |
Not Qualified |
440800 bit |
3 V |
IT ALSO REQUIRES 5V NOMINAL SUPPLY |
e3 |
.00006 Amp |
8.9662 mm |
3.3 |
||||||||
Intel |
CONFIGURATION MEMORY |
32 |
TQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
50 mA |
1695680 words |
3.3 |
3.3/5 |
1 |
FLATPACK, THIN PROFILE |
TQFP32,.35SQ,32 |
Flash Memories |
.8 mm |
70 Cel |
3-STATE |
1695680X1 |
1695680 |
0 Cel |
Tin/Lead (Sn85Pb15) |
QUAD |
S-PQFP-G32 |
3 |
3.6 V |
1.2 mm |
7 mm |
Not Qualified |
1695680 bit |
3 V |
IT ALSO REQUIRES 5V NOMINAL SUPPLY |
e0 |
30 |
235 |
.0001 Amp |
7 mm |
3.3 |
||||||||
|
Intel |
CONFIGURATION MEMORY |
COMMERCIAL |
20 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
SERIAL |
SYNCHRONOUS |
50 mA |
1046496 words |
3.3 |
3.3/5 |
1 |
CHIP CARRIER |
LCC20,.39SQ |
OTP ROMs |
1.27 mm |
70 Cel |
3-STATE |
1046496X1 |
1046496 |
0 Cel |
MATTE TIN |
QUAD |
S-PQCC-J20 |
3 |
3.6 V |
4.572 mm |
8.9662 mm |
Not Qualified |
1046496 bit |
3 V |
IT ALSO REQUIRES 5V NOMINAL SUPPLY |
e3 |
30 |
245 |
.0001 Amp |
8.9662 mm |
3.3 |
||||||
Intel |
CONFIGURATION MEMORY |
20 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
SERIAL |
SYNCHRONOUS |
30 mA |
440800 words |
3.3 |
3.3/5 |
1 |
CHIP CARRIER |
LDCC20,.4SQ |
OTP ROMs |
1.27 mm |
70 Cel |
3-STATE |
440800X1 |
440800 |
0 Cel |
TIN LEAD |
QUAD |
S-PQCC-J20 |
1 |
3.6 V |
4.572 mm |
8.9662 mm |
Not Qualified |
440800 bit |
3 V |
IT ALSO REQUIRES 5V NOMINAL SUPPLY |
e0 |
.00006 Amp |
8.9662 mm |
3.3 |
||||||||||
Intel |
CONFIGURATION MEMORY |
20 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
SERIAL |
SYNCHRONOUS |
50 mA |
1046496 words |
3.3 |
5 |
1 |
CHIP CARRIER |
LDCC20,.4SQ |
OTP ROMs |
1.27 mm |
70 Cel |
3-STATE |
1046496X1 |
1046496 |
0 Cel |
TIN LEAD |
QUAD |
S-PQCC-J20 |
1 |
3.6 V |
4.572 mm |
8.9662 mm |
Not Qualified |
1046496 bit |
3 V |
IT ALSO REQUIRES 5V NOMINAL SUPPLY |
e0 |
30 |
220 |
.0001 Amp |
8.9662 mm |
3.3 |
||||||||
Intel |
CONFIGURATION MEMORY |
20 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
SERIAL |
SYNCHRONOUS |
30 mA |
440800 words |
3.3 |
3.3/5 |
1 |
CHIP CARRIER |
LDCC20,.4SQ |
OTP ROMs |
1.27 mm |
85 Cel |
3-STATE |
440800X1 |
440800 |
-40 Cel |
TIN LEAD |
QUAD |
S-PQCC-J20 |
1 |
3.6 V |
4.572 mm |
8.9662 mm |
Not Qualified |
440800 bit |
3 V |
IT ALSO REQUIRES 5V NOMINAL SUPPLY |
e0 |
.00006 Amp |
8.9662 mm |
3.3 |
||||||||||
STMicroelectronics |
UVPROM |
MILITARY |
28 |
WQCCN |
SQUARE |
CERAMIC, GLASS-SEALED |
YES |
1 |
CMOS |
38535Q/M;38534H;883B |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
50 mA |
8192 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER, WINDOW |
LCC28,.45SQ |
EPROMs |
1.27 mm |
125 Cel |
3-STATE |
8KX8 |
8K |
-55 Cel |
Gold (Au) |
QUAD |
S-GQCC-N28 |
5.5 V |
3.3 mm |
11.455 mm |
Not Qualified |
65536 bit |
4.5 V |
e4 |
.035 Amp |
11.455 mm |
35 ns |
|||||||||
STMicroelectronics |
UVPROM |
MILITARY |
28 |
WQCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
8192 words |
5 |
8 |
CHIP CARRIER, WINDOW |
1.27 mm |
125 Cel |
8KX8 |
8K |
-55 Cel |
QUAD |
S-CQCC-N28 |
5.5 V |
3.3 mm |
11.455 mm |
Not Qualified |
65536 bit |
4.5 V |
11.455 mm |
70 ns |
|||||||||||||||||||
STMicroelectronics |
UVPROM |
MILITARY |
28 |
QCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
4096 words |
5 |
8 |
CHIP CARRIER |
125 Cel |
4KX8 |
4K |
-55 Cel |
TIN LEAD |
QUAD |
S-CQCC-N28 |
5.5 V |
Not Qualified |
32768 bit |
4.5 V |
e0 |
45 ns |
|||||||||||||||||||||
STMicroelectronics |
UVPROM |
MILITARY |
28 |
WQCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
38535Q/M;38534H;883B |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
8192 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER, WINDOW |
LCC28,.45SQ |
EPROMs |
1.27 mm |
125 Cel |
3-STATE |
8KX8 |
8K |
-55 Cel |
Gold (Au) |
QUAD |
S-CQCC-N28 |
5.5 V |
3.3 mm |
11.455 mm |
Not Qualified |
65536 bit |
4.5 V |
e4 |
11.455 mm |
55 ns |
|||||||||||
STMicroelectronics |
UVPROM |
MILITARY |
28 |
QCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
38535Q/M;38534H;883B |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
50 mA |
4096 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LCC28,.45SQ |
EPROMs |
1.27 mm |
125 Cel |
3-STATE |
4KX8 |
4K |
-55 Cel |
Gold (Au) |
QUAD |
S-CQCC-N28 |
5.5 V |
Not Qualified |
32768 bit |
4.5 V |
e4 |
.035 Amp |
45 ns |
||||||||||||
STMicroelectronics |
UVPROM |
MILITARY |
28 |
WQCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
8192 words |
5 |
8 |
CHIP CARRIER, WINDOW |
1.27 mm |
125 Cel |
8KX8 |
8K |
-55 Cel |
TIN LEAD |
QUAD |
S-CQCC-N28 |
5.5 V |
2.8956 mm |
11.43 mm |
Not Qualified |
65536 bit |
4.5 V |
POWER SWITCHED PROM |
e0 |
11.43 mm |
35 ns |
||||||||||||||||
STMicroelectronics |
UVPROM |
MILITARY |
28 |
WQCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
38535Q/M;38534H;883B |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
8192 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER, WINDOW |
LCC28,.45SQ |
EPROMs |
1.27 mm |
125 Cel |
3-STATE |
8KX8 |
8K |
-55 Cel |
Gold (Au) |
QUAD |
S-CQCC-N28 |
5.5 V |
3.3 mm |
11.455 mm |
Not Qualified |
65536 bit |
4.5 V |
e4 |
11.455 mm |
45 ns |
|||||||||||
STMicroelectronics |
UVPROM |
MILITARY |
28 |
QCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
MIL-STD-883 |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
2048 words |
5 |
8 |
CHIP CARRIER |
125 Cel |
2KX8 |
2K |
-55 Cel |
TIN LEAD |
QUAD |
S-CQCC-N28 |
5.5 V |
Not Qualified |
16384 bit |
4.5 V |
e0 |
55 ns |
||||||||||||||||||||
STMicroelectronics |
UVPROM |
MILITARY |
28 |
WQCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
8192 words |
5 |
8 |
CHIP CARRIER, WINDOW |
1.27 mm |
125 Cel |
8KX8 |
8K |
-55 Cel |
QUAD |
S-CQCC-N28 |
5.5 V |
3.3 mm |
11.455 mm |
Not Qualified |
65536 bit |
4.5 V |
11.455 mm |
45 ns |
|||||||||||||||||||
STMicroelectronics |
UVPROM |
MILITARY |
28 |
WQCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
SYNCHRONOUS |
2048 words |
5 |
8 |
CHIP CARRIER, WINDOW |
1.27 mm |
125 Cel |
2KX8 |
2K |
-55 Cel |
TIN LEAD |
QUAD |
S-CQCC-N28 |
5.5 V |
2.8956 mm |
11.43 mm |
Not Qualified |
16384 bit |
4.5 V |
e0 |
11.43 mm |
||||||||||||||||||
STMicroelectronics |
UVPROM |
MILITARY |
28 |
WQCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
38535Q/M;38534H;883B |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
8192 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER, WINDOW |
LCC28,.45SQ |
EPROMs |
1.27 mm |
125 Cel |
3-STATE |
8KX8 |
8K |
-55 Cel |
Gold (Au) |
QUAD |
S-CQCC-N28 |
5.5 V |
3.3 mm |
11.455 mm |
Not Qualified |
65536 bit |
4.5 V |
e4 |
11.455 mm |
70 ns |
|||||||||||
STMicroelectronics |
COMMERCIAL |
28 |
QCCN |
SQUARE |
CERAMIC |
YES |
CMOS |
NO LEAD |
126 mA |
8192 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LCC28,.5SQ |
EPROMs |
1.27 mm |
70 Cel |
3-STATE |
8KX8 |
8K |
0 Cel |
Tin/Lead (Sn/Pb) |
QUAD |
S-XQCC-N28 |
Not Qualified |
65536 bit |
e0 |
.03 Amp |
35 ns |
|||||||||||||||||||
STMicroelectronics |
UVPROM |
MILITARY |
28 |
WQCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
2048 words |
5 |
8 |
CHIP CARRIER, WINDOW |
1.27 mm |
125 Cel |
2KX8 |
2K |
-55 Cel |
TIN LEAD |
QUAD |
S-CQCC-N28 |
5.5 V |
2.8956 mm |
11.43 mm |
Not Qualified |
16384 bit |
4.5 V |
e0 |
11.43 mm |
50 ns |
|||||||||||||||||
STMicroelectronics |
UVPROM |
MILITARY |
28 |
WQCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
38535Q/M;38534H;883B |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
50 mA |
4096 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER, WINDOW |
LCC28,.45SQ |
EPROMs |
1.27 mm |
125 Cel |
3-STATE |
4KX8 |
4K |
-55 Cel |
Gold (Au) |
QUAD |
S-CQCC-N28 |
5.5 V |
3.3 mm |
11.455 mm |
Not Qualified |
32768 bit |
4.5 V |
e4 |
.035 Amp |
11.455 mm |
35 ns |
|||||||||
STMicroelectronics |
UVPROM |
MILITARY |
28 |
WQCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
38535Q/M;38534H;883B |
NO LEAD |
PARALLEL |
SYNCHRONOUS |
120 mA |
2048 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER, WINDOW |
LCC28,.45SQ |
EPROMs |
1.27 mm |
125 Cel |
REGISTERED |
2KX8 |
2K |
-55 Cel |
Gold (Au) |
QUAD |
S-CQCC-N28 |
5.5 V |
2.8956 mm |
11.43 mm |
Not Qualified |
16384 bit |
4.5 V |
e4 |
.12 Amp |
11.43 mm |
45 ns |
13.5 |
||||||||
STMicroelectronics |
UVPROM |
MILITARY |
28 |
QCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
8192 words |
5 |
8 |
CHIP CARRIER |
125 Cel |
8KX8 |
8K |
-55 Cel |
TIN LEAD |
QUAD |
S-CQCC-N28 |
5.5 V |
Not Qualified |
65536 bit |
4.5 V |
e0 |
90 ns |
|||||||||||||||||||||
STMicroelectronics |
UVPROM |
MILITARY |
28 |
WQCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
2048 words |
5 |
8 |
CHIP CARRIER, WINDOW |
1.27 mm |
125 Cel |
2KX8 |
2K |
-55 Cel |
QUAD |
S-CQCC-N28 |
5.5 V |
3.3 mm |
11.455 mm |
Not Qualified |
16384 bit |
4.5 V |
11.455 mm |
45 ns |
|||||||||||||||||||
STMicroelectronics |
UVPROM |
MILITARY |
28 |
QCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
MIL-STD-883 |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
120 mA |
2048 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LCC28,.45SQ |
EPROMs |
1.27 mm |
125 Cel |
3-STATE |
2KX8 |
2K |
-55 Cel |
Gold (Au) |
QUAD |
S-CQCC-N28 |
5.5 V |
Not Qualified |
16384 bit |
4.5 V |
e4 |
.12 Amp |
55 ns |
13.5 |
|||||||||||
STMicroelectronics |
UVPROM |
MILITARY |
28 |
WQCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
38535Q/M;38534H;883B |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
120 mA |
8192 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER, WINDOW |
LCC28,.45SQ |
EPROMs |
1.27 mm |
125 Cel |
3-STATE |
8KX8 |
8K |
-55 Cel |
Gold (Au) |
QUAD |
S-CQCC-N28 |
5.5 V |
2.8956 mm |
11.43 mm |
Not Qualified |
65536 bit |
4.5 V |
POWER SWITCHED PROM |
e4 |
.04 Amp |
11.43 mm |
35 ns |
||||||||
STMicroelectronics |
UVPROM |
MILITARY |
28 |
WQCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
MIL-STD-883 Class B |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
95 mA |
8192 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER, WINDOW |
LCC28,.45SQ |
EPROMs |
1.27 mm |
125 Cel |
3-STATE |
8KX8 |
8K |
-55 Cel |
TIN LEAD |
QUAD |
S-CQCC-N28 |
3.3 mm |
11.455 mm |
Not Qualified |
65536 bit |
e0 |
.035 Amp |
11.455 mm |
55 ns |
|||||||||||
STMicroelectronics |
UVPROM |
MILITARY |
28 |
QCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
4096 words |
5 |
8 |
CHIP CARRIER |
125 Cel |
4KX8 |
4K |
-55 Cel |
TIN LEAD |
QUAD |
S-CQCC-N28 |
5.5 V |
Not Qualified |
32768 bit |
4.5 V |
e0 |
55 ns |
|||||||||||||||||||||
STMicroelectronics |
UVPROM |
MILITARY |
28 |
WQCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
8192 words |
5 |
8 |
CHIP CARRIER, WINDOW |
1.27 mm |
125 Cel |
8KX8 |
8K |
-55 Cel |
TIN LEAD |
QUAD |
S-CQCC-N28 |
5.5 V |
2.8956 mm |
11.43 mm |
Not Qualified |
65536 bit |
4.5 V |
POWER SWITCHED PROM |
e0 |
11.43 mm |
35 ns |
||||||||||||||||
STMicroelectronics |
UVPROM |
MILITARY |
28 |
QCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
38535Q/M;38534H;883B |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
50 mA |
4096 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LCC28,.45SQ |
EPROMs |
1.27 mm |
125 Cel |
3-STATE |
4KX8 |
4K |
-55 Cel |
Gold (Au) |
QUAD |
S-CQCC-N28 |
5.5 V |
Not Qualified |
32768 bit |
4.5 V |
e4 |
.035 Amp |
70 ns |
||||||||||||
STMicroelectronics |
UVPROM |
MILITARY |
28 |
QCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
4096 words |
5 |
8 |
CHIP CARRIER |
125 Cel |
4KX8 |
4K |
-55 Cel |
TIN LEAD |
QUAD |
S-CQCC-N28 |
5.5 V |
Not Qualified |
32768 bit |
4.5 V |
e0 |
70 ns |
|||||||||||||||||||||
STMicroelectronics |
UVPROM |
MILITARY |
28 |
WQCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
MIL-STD-883 Class B |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
107 mA |
8192 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER, WINDOW |
LCC28,.45SQ |
EPROMs |
1.27 mm |
125 Cel |
3-STATE |
8KX8 |
8K |
-55 Cel |
TIN LEAD |
QUAD |
S-CQCC-N28 |
3.3 mm |
11.455 mm |
Not Qualified |
65536 bit |
e0 |
.035 Amp |
11.455 mm |
45 ns |
|||||||||||
STMicroelectronics |
UVPROM |
INDUSTRIAL |
32 |
QCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
131072 words |
8 |
CHIP CARRIER |
85 Cel |
128KX8 |
128K |
-40 Cel |
QUAD |
S-CQCC-N32 |
5.5 V |
Not Qualified |
1048576 bit |
3 V |
200 ns |
||||||||||||||||||||||||
STMicroelectronics |
UVPROM |
MILITARY |
28 |
WQCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
38535Q/M;38534H;883B |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
50 mA |
4096 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER, WINDOW |
LCC28,.45SQ |
EPROMs |
1.27 mm |
125 Cel |
3-STATE |
4KX8 |
4K |
-55 Cel |
TIN LEAD |
QUAD |
S-CQCC-N28 |
5.5 V |
3.3 mm |
11.455 mm |
Not Qualified |
32768 bit |
4.5 V |
e0 |
.03 Amp |
11.455 mm |
35 ns |
|||||||||
STMicroelectronics |
UVPROM |
INDUSTRIAL |
32 |
QCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
524288 words |
8 |
CHIP CARRIER |
85 Cel |
512KX8 |
512K |
-40 Cel |
QUAD |
S-CQCC-N32 |
5.5 V |
Not Qualified |
4194304 bit |
3 V |
200 ns |
||||||||||||||||||||||||
STMicroelectronics |
UVPROM |
MILITARY |
28 |
QCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
38535Q/M;38534H;883B |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
8192 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LCC28,.45SQ |
EPROMs |
1.27 mm |
125 Cel |
3-STATE |
8KX8 |
8K |
-55 Cel |
Gold (Au) |
QUAD |
S-CQCC-N28 |
5.5 V |
Not Qualified |
65536 bit |
4.5 V |
e4 |
90 ns |
||||||||||||||
STMicroelectronics |
UVPROM |
MILITARY |
28 |
WQCCN |
SQUARE |
CERAMIC, GLASS-SEALED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
8192 words |
5 |
8 |
CHIP CARRIER, WINDOW |
1.27 mm |
125 Cel |
8KX8 |
8K |
-55 Cel |
QUAD |
S-GQCC-N28 |
5.5 V |
3.3 mm |
11.455 mm |
Not Qualified |
65536 bit |
4.5 V |
11.455 mm |
35 ns |
|||||||||||||||||||
STMicroelectronics |
UVPROM |
MILITARY |
28 |
WQCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
MIL-STD-883 Class B |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
50 mA |
8192 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER, WINDOW |
LCC28,.45SQ |
EPROMs |
1.27 mm |
125 Cel |
3-STATE |
8KX8 |
8K |
-55 Cel |
TIN LEAD |
QUAD |
S-CQCC-N28 |
3.3 mm |
11.455 mm |
Not Qualified |
65536 bit |
e0 |
.035 Amp |
11.455 mm |
35 ns |
|||||||||||
STMicroelectronics |
UVPROM |
MILITARY |
28 |
WQCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
38535Q/M;38534H;883B |
NO LEAD |
PARALLEL |
SYNCHRONOUS |
120 mA |
2048 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER, WINDOW |
LCC28,.45SQ |
EPROMs |
1.27 mm |
125 Cel |
REGISTERED |
2KX8 |
2K |
-55 Cel |
Gold (Au) |
QUAD |
S-CQCC-N28 |
5.5 V |
2.8956 mm |
11.43 mm |
Not Qualified |
16384 bit |
4.5 V |
e4 |
.12 Amp |
11.43 mm |
35 ns |
13.5 |
||||||||
STMicroelectronics |
UVPROM |
MILITARY |
28 |
WQCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
38535Q/M;38534H;883B |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
120 mA |
2048 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER, WINDOW |
LCC28,.45SQ |
EPROMs |
1.27 mm |
125 Cel |
3-STATE |
2KX8 |
2K |
-55 Cel |
Gold (Au) |
QUAD |
S-CQCC-N28 |
5.5 V |
3.3 mm |
11.455 mm |
Not Qualified |
16384 bit |
4.5 V |
e4 |
.12 Amp |
11.455 mm |
45 ns |
13.5 |
||||||||
STMicroelectronics |
UVPROM |
MILITARY |
28 |
WQCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
38535Q/M;38534H;883B |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
120 mA |
2048 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER, WINDOW |
LCC28,.45SQ |
EPROMs |
1.27 mm |
125 Cel |
3-STATE |
2KX8 |
2K |
-55 Cel |
Gold (Au) |
QUAD |
S-CQCC-N28 |
5.5 V |
2.8956 mm |
11.43 mm |
Not Qualified |
16384 bit |
4.5 V |
e4 |
.12 Amp |
11.43 mm |
50 ns |
13.5 |
EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.
EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.
EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.