AUTOMOTIVE EPROM 340

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
M87C257-10F3X	STMicroelectronics	UVPROM	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28	5.5 V	5.71 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	e3			.0001 Amp		100 ns
M87C257-20F3	STMicroelectronics	UVPROM	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-CDIP-T28	5.5 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	e3			.0001 Amp	36.92 mm	150 ns
TTV27C256N-20M-6	STMicroelectronics	UVPROM	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5		8	IN-LINE, WINDOW	DIP28,.6		2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel		DUAL	R-GDIP-T28	5.25 V	5.72 mm	15.24 mm		262144 bit	4.75 V				.0001 Amp	36.92 mm	200 ns	12.75
M87C257-15F3X	STMicroelectronics	UVPROM	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28	5.5 V	5.71 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	e3			.0001 Amp		150 ns
M87C257-20XF3X	STMicroelectronics	UVPROM	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28	5.25 V	5.71 mm	15.24 mm	Not Qualified	262144 bit	4.75 V	e3			.0001 Amp		150 ns
M87C257-12F3X	STMicroelectronics	UVPROM	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28	5.5 V	5.71 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	e3			.0001 Amp		120 ns
M27C256B-20XF3X	STMicroelectronics	UVPROM	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28	5.25 V	5.97 mm	15.24 mm	Not Qualified	262144 bit	4.75 V	e3			.0001 Amp	36.92 mm	150 ns	12.75
M27C1024-45F3X	STMicroelectronics	UVPROM	AUTOMOTIVE	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	65536 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6	EPROMs	2.54 mm	125 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T40	5.5 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V	e3			.0001 Amp	52.195 mm	45 ns
M27C1024-15XF3	STMicroelectronics	UVPROM	AUTOMOTIVE	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	65536 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6	EPROMs	2.54 mm	125 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T40	5.25 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V	e3			.0001 Amp	52.195 mm	100 ns
M27C1001-60XL3TR	STMicroelectronics	UVPROM	AUTOMOTIVE	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55	EPROMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel	TIN LEAD	QUAD	R-CQCC-N32	5.25 V	2.28 mm	11.43 mm	Not Qualified	1048576 bit	4.75 V	e0			.0001 Amp	13.97 mm	60 ns
M27C1001-60XL3X	STMicroelectronics	UVPROM	AUTOMOTIVE	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55	EPROMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel	GOLD	QUAD	R-CQCC-N32	5.25 V	2.28 mm	11.43 mm	Not Qualified	1048576 bit	4.75 V	e4			.0001 Amp	13.97 mm	60 ns
M27C1001-35L3X	STMicroelectronics	UVPROM	AUTOMOTIVE	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55	EPROMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel	GOLD	QUAD	R-CQCC-N32	5.5 V	2.28 mm	11.43 mm	Not Qualified	1048576 bit	4.5 V	e4			.0001 Amp	13.97 mm	35 ns
M27C1001-60F3	STMicroelectronics	UVPROM	AUTOMOTIVE	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel	MATTE TIN	DUAL	R-CDIP-T32	5.5 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V	e3			.0001 Amp	41.885 mm	60 ns
M27C1001-45L3	STMicroelectronics	UVPROM	AUTOMOTIVE	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55	EPROMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel	GOLD	QUAD	R-CQCC-N32	5.5 V	2.28 mm	11.43 mm	Not Qualified	1048576 bit	4.5 V	e4			.0001 Amp	13.97 mm	45 ns
M27C1024-20XF3X	STMicroelectronics	UVPROM	AUTOMOTIVE	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	65536 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6	EPROMs	2.54 mm	125 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T40	5.25 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V	e3			.0001 Amp	52.195 mm	100 ns
M27C1001-12L3	STMicroelectronics	UVPROM	AUTOMOTIVE	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55	EPROMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel	GOLD	QUAD	R-CQCC-N32	5.5 V	2.28 mm	11.43 mm	Not Qualified	1048576 bit	4.5 V	e4			.0001 Amp	13.97 mm	120 ns
M27C1001-90L3X	STMicroelectronics	UVPROM	AUTOMOTIVE	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55	EPROMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel	TIN LEAD	QUAD	R-CQCC-N32	5.5 V	2.28 mm	11.43 mm	Not Qualified	1048576 bit	4.5 V	e0			.0001 Amp	13.97 mm	90 ns
M27C512-10F3	STMicroelectronics	UVPROM	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	64KX8	64K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.5 V	5.72 mm	15.24 mm	Not Qualified	524288 bit	4.5 V	e0			.0001 Amp	36.92 mm	100 ns
M27C256B-20XF3	STMicroelectronics	UVPROM	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-CDIP-T28	5.25 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.75 V	e3			.0002 Amp	36.92 mm	150 ns	12.75
M27C256B-45F3X	STMicroelectronics	UVPROM	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28	5.5 V	5.97 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	e3			.0001 Amp	36.92 mm	45 ns	12.75
M27C1001-45XL3TR	STMicroelectronics	UVPROM	AUTOMOTIVE	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55	EPROMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel	TIN LEAD	QUAD	R-CQCC-N32	5.25 V	2.28 mm	11.43 mm	Not Qualified	1048576 bit	4.75 V	e0			.0001 Amp	13.97 mm	45 ns
M27C512-10F3E	STMicroelectronics	UVPROM	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	64KX8	64K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28	5.5 V	5.72 mm	15.24 mm	Not Qualified	524288 bit	4.5 V	e3			.0001 Amp	36.92 mm	100 ns
M27C512-10F3X	STMicroelectronics	UVPROM	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	64KX8	64K	-40 Cel		DUAL	R-GDIP-T28	5.5 V	5.97 mm	15.24 mm	Not Qualified	524288 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	36.92 mm	100 ns
M27C512-90XF3	STMicroelectronics	UVPROM	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	64KX8	64K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28	5.5 V	5.72 mm	15.24 mm	Not Qualified	524288 bit	4.75 V	e3			.0001 Amp	36.92 mm	90 ns
M27C1001-25L3XTR	STMicroelectronics		AUTOMOTIVE	32	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	NO LEAD			30 mA	131072 words	COMMON	5	5	8	CHIP CARRIER	LCC32,.45X.55	EPROMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel	Tin/Lead (Sn/Pb)	QUAD	R-XQCC-N32					1048576 bit		e0			.0001 Amp		120 ns
M27C1001-20XL3XTR	STMicroelectronics		AUTOMOTIVE	32	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	NO LEAD			30 mA	131072 words	COMMON	5	5	8	CHIP CARRIER	LCC32,.45X.55	EPROMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel	Tin/Lead (Sn/Pb)	QUAD	R-XQCC-N32					1048576 bit		e0			.0001 Amp		120 ns
M27C512-20F3E	STMicroelectronics	UVPROM	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	64KX8	64K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28	5.5 V	5.72 mm	15.24 mm	Not Qualified	524288 bit	4.5 V	e3			.0001 Amp	36.92 mm	200 ns
M27C1024-55XF3	STMicroelectronics	UVPROM	AUTOMOTIVE	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	65536 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6	EPROMs	2.54 mm	125 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T40	5.25 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V	e3			.0001 Amp	52.195 mm	55 ns
M27C256B-70F3X	STMicroelectronics	UVPROM	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28	5.5 V	5.97 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	e3			.0001 Amp	36.92 mm	70 ns	12.75
M27C256B-25F3	STMicroelectronics	UVPROM	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-CDIP-T28	5.5 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	e3			.0001 Amp	36.92 mm	150 ns	12.75
M27C322-80F3	STMicroelectronics	UVPROM	AUTOMOTIVE	42	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	2097152 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP42,.6	EPROMs	2.54 mm	125 Cel	3-STATE	2MX16	2M	-40 Cel	MATTE TIN	DUAL	R-CDIP-T42	5.5 V	5.71 mm	15.24 mm	Not Qualified	33554432 bit	4.5 V	e3			.0001 Amp	54.635 mm	80 ns
M27C512-25XF3X	STMicroelectronics	UVPROM	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	64KX8	64K	-40 Cel		DUAL	R-GDIP-T28	5.25 V	5.97 mm	15.24 mm	Not Qualified	524288 bit	4.75 V		NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	36.92 mm	150 ns
M27C1001-20XL3X	STMicroelectronics	UVPROM	AUTOMOTIVE	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55	EPROMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel	GOLD	QUAD	R-CQCC-N32	5.25 V	2.28 mm	11.43 mm	Not Qualified	1048576 bit	4.75 V	e4			.0001 Amp	13.97 mm	120 ns
M27C1001-90L3	STMicroelectronics	UVPROM	AUTOMOTIVE	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55	EPROMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel	TIN LEAD	QUAD	R-CQCC-N32	5.5 V	2.28 mm	11.43 mm	Not Qualified	1048576 bit	4.5 V	e0			.0001 Amp	13.97 mm	90 ns
M27C1001-20XL3TR	STMicroelectronics	UVPROM	AUTOMOTIVE	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55	EPROMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel	TIN LEAD	QUAD	R-CQCC-N32	5.25 V	2.28 mm	11.43 mm	Not Qualified	1048576 bit	4.75 V	e0			.0001 Amp	13.97 mm	120 ns
M27C202-90F3	STMicroelectronics	UVPROM	AUTOMOTIVE	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6	EPROMs	2.54 mm	125 Cel	3-STATE	128KX16	128K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T40	5.5 V	5.97 mm	15.24 mm	Not Qualified	2097152 bit	4.5 V	e3			.0001 Amp	52.195 mm	90 ns
M27C256B-12F3X	STMicroelectronics	UVPROM	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28	5.5 V	5.97 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	e3			.0001 Amp	36.92 mm	120 ns	12.75
M27C1001-25F3	STMicroelectronics	UVPROM	AUTOMOTIVE	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel	MATTE TIN	DUAL	R-CDIP-T32	5.5 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V	e3			.0001 Amp	41.885 mm	250 ns
M27C1001-45L3TR	STMicroelectronics	UVPROM	AUTOMOTIVE	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55	EPROMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel	TIN LEAD	QUAD	R-CQCC-N32	5.5 V	2.28 mm	11.43 mm	Not Qualified	1048576 bit	4.5 V	e0			.0001 Amp	13.97 mm	45 ns
M27C256B-60XF3	STMicroelectronics	UVPROM	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-CDIP-T28	5.25 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.75 V	e3			.0001 Amp	36.92 mm	60 ns	12.75
M27C512-12XF3E	STMicroelectronics	UVPROM	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	64KX8	64K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28	5.5 V	5.72 mm	15.24 mm	Not Qualified	524288 bit	4.75 V	e3			.0001 Amp	36.92 mm	120 ns
M27C256B-60XF3X	STMicroelectronics	UVPROM	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28	5.25 V	5.97 mm	15.24 mm	Not Qualified	262144 bit	4.75 V	e3			.0001 Amp	36.92 mm	60 ns	12.75
M27C1001-80L3TR	STMicroelectronics	UVPROM	AUTOMOTIVE	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55	EPROMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel	TIN LEAD	QUAD	R-CQCC-N32	5.5 V	2.28 mm	11.43 mm	Not Qualified	1048576 bit	4.5 V	e0			.0001 Amp	13.97 mm	80 ns
M27C1001-45XL3	STMicroelectronics	UVPROM	AUTOMOTIVE	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55	EPROMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel	GOLD	QUAD	R-CQCC-N32	5.25 V	2.28 mm	11.43 mm	Not Qualified	1048576 bit	4.75 V	e4			.0001 Amp	13.97 mm	45 ns
M27C1001-80XL3	STMicroelectronics	UVPROM	AUTOMOTIVE	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55	EPROMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel	TIN LEAD	QUAD	R-CQCC-N32	5.25 V	2.28 mm	11.43 mm	Not Qualified	1048576 bit	4.75 V	e0			.0001 Amp	13.97 mm	80 ns
M27C202-120F3	STMicroelectronics	UVPROM	AUTOMOTIVE	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		16	IN-LINE, WINDOW			2.54 mm	125 Cel		128KX16	128K	-40 Cel		DUAL	R-GDIP-T40	5.5 V	5.97 mm	15.24 mm	Not Qualified	2097152 bit	4.5 V					52.195 mm	100 ns
M27C1001-35XL3TR	STMicroelectronics	UVPROM	AUTOMOTIVE	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55	EPROMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel	TIN LEAD	QUAD	R-CQCC-N32	5.25 V	2.28 mm	11.43 mm	Not Qualified	1048576 bit	4.75 V	e0			.0001 Amp	13.97 mm	35 ns
M27C1001-80XF3	STMicroelectronics	UVPROM	AUTOMOTIVE	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel	MATTE TIN	DUAL	R-CDIP-T32	5.25 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V	e3			.0001 Amp	41.885 mm	80 ns

EPROM

EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.

EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.

EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.