COMMERCIAL EXTENDED EPROM 6

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Maximum Standby Current	Maximum Access Time
M27V402-200F5TR	STMicroelectronics	UVPROM	COMMERCIAL EXTENDED	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	IN-LINE, WINDOW			2.54 mm	85 Cel		256KX16	256K	-20 Cel	DUAL	R-GDIP-T40	3.63 V	5.72 mm	15.24 mm	Not Qualified	4194304 bit	2.97 V		200 ns
M27V402-120F5TR	STMicroelectronics	UVPROM	COMMERCIAL EXTENDED	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	IN-LINE, WINDOW			2.54 mm	85 Cel		256KX16	256K	-20 Cel	DUAL	R-GDIP-T40	3.63 V	5.72 mm	15.24 mm	Not Qualified	4194304 bit	2.97 V		120 ns
M27V402-150F5TR	STMicroelectronics	UVPROM	COMMERCIAL EXTENDED	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	IN-LINE, WINDOW			2.54 mm	85 Cel		256KX16	256K	-20 Cel	DUAL	R-GDIP-T40	3.63 V	5.72 mm	15.24 mm	Not Qualified	4194304 bit	2.97 V		150 ns
UPD27C1000AD-12	Renesas Electronics		COMMERCIAL EXTENDED	32	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE			40 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6	EPROMs	2.54 mm	80 Cel	3-STATE	128KX8	128K	-10 Cel	DUAL	R-XDIP-T32				Not Qualified	1048576 bit		.0001 Amp	120 ns
UPD27C1000AD-20	Renesas Electronics		COMMERCIAL EXTENDED	32	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE			40 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6	EPROMs	2.54 mm	80 Cel	3-STATE	128KX8	128K	-10 Cel	DUAL	R-XDIP-T32				Not Qualified	1048576 bit		.0001 Amp	200 ns
UPD27C1000AD-15	Renesas Electronics		COMMERCIAL EXTENDED	32	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE			40 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6	EPROMs	2.54 mm	80 Cel	3-STATE	128KX8	128K	-10 Cel	DUAL	R-XDIP-T32				Not Qualified	1048576 bit		.0001 Amp	150 ns

EPROM

EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.

EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.

EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.