OTHER EPROM 21

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
TMS2764A-45JP4	Texas Instruments	UVPROM	OTHER	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE, WINDOW			2.54 mm	85 Cel	3-STATE	8KX8	8K	-10 Cel		DUAL	R-GDIP-T28	5.25 V	5.84 mm	15.24 mm	Not Qualified	65536 bit	4.75 V						450 ns
TMS2732A-25JP4	Texas Instruments	UVPROM	OTHER	24	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	NMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.6	EPROMs	2.54 mm	85 Cel	3-STATE	4KX8	4K	-10 Cel		DUAL	R-CDIP-T24	5.25 V	4.907 mm	15.24 mm	Not Qualified	32768 bit	4.75 V		NOT SPECIFIED	NOT SPECIFIED		31.75 mm	250 ns	21
TMS276420JP4	Texas Instruments	UVPROM	OTHER	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	NMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	8KX8	8K	-10 Cel		DUAL	R-CDIP-T28	5.25 V	4.907 mm	15.24 mm	Not Qualified	65536 bit	4.75 V					36.83 mm	200 ns	21
TMS276417JP4	Texas Instruments	UVPROM	OTHER	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	NMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	8KX8	8K	-10 Cel		DUAL	R-CDIP-T28	5.25 V	4.907 mm	15.24 mm	Not Qualified	65536 bit	4.75 V					36.83 mm	170 ns	21
TMS2732A-20JP4	Texas Instruments	UVPROM	OTHER	24	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	NMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.6	EPROMs	2.54 mm	85 Cel	3-STATE	4KX8	4K	-10 Cel		DUAL	R-CDIP-T24	5.25 V	4.907 mm	15.24 mm	Not Qualified	32768 bit	4.75 V		NOT SPECIFIED	NOT SPECIFIED		31.75 mm	200 ns	21
TMS276425JP4	Texas Instruments	UVPROM	OTHER	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	NMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	8KX8	8K	-10 Cel		DUAL	R-CDIP-T28	5.25 V	4.907 mm	15.24 mm	Not Qualified	65536 bit	4.75 V					36.83 mm	250 ns	21
TMS2732A-45JP4	Texas Instruments	UVPROM	OTHER	24	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	NMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.6	EPROMs	2.54 mm	85 Cel	3-STATE	4KX8	4K	-10 Cel		DUAL	R-CDIP-T24	5.25 V	4.907 mm	15.24 mm	Not Qualified	32768 bit	4.75 V		NOT SPECIFIED	NOT SPECIFIED		31.75 mm	450 ns	21
TMS2764A-25JP4	Texas Instruments	UVPROM	OTHER	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE, WINDOW			2.54 mm	85 Cel	3-STATE	8KX8	8K	-10 Cel		DUAL	R-GDIP-T28	5.25 V	5.84 mm	15.24 mm	Not Qualified	65536 bit	4.75 V						250 ns
TMS276445JP4	Texas Instruments	UVPROM	OTHER	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	NMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	8KX8	8K	-10 Cel		DUAL	R-CDIP-T28	5.25 V	4.907 mm	15.24 mm	Not Qualified	65536 bit	4.75 V					36.83 mm	450 ns	21
TMS2732A-17JP4	Texas Instruments	UVPROM	OTHER	24	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	NMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.6	EPROMs	2.54 mm	85 Cel	3-STATE	4KX8	4K	-10 Cel		DUAL	R-CDIP-T24	5.25 V	4.907 mm	15.24 mm	Not Qualified	32768 bit	4.75 V		NOT SPECIFIED	NOT SPECIFIED		31.75 mm	170 ns	21
TMS2764A-17JP4	Texas Instruments	UVPROM	OTHER	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE, WINDOW			2.54 mm	85 Cel	3-STATE	8KX8	8K	-10 Cel		DUAL	R-GDIP-T28	5.25 V	5.84 mm	15.24 mm	Not Qualified	65536 bit	4.75 V						170 ns
TMS2764A-20JP4	Texas Instruments	UVPROM	OTHER	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE, WINDOW			2.54 mm	85 Cel	3-STATE	8KX8	8K	-10 Cel		DUAL	R-GDIP-T28	5.25 V	5.84 mm	15.24 mm	Not Qualified	65536 bit	4.75 V						200 ns
M27V402-150F4	STMicroelectronics	UVPROM	OTHER	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP40,.6	EPROMs	2.54 mm	70 Cel	3-STATE	256KX16	256K	-20 Cel	TIN LEAD	DUAL	R-GDIP-T40	3.63 V	5.72 mm	15.24 mm	Not Qualified	4194304 bit	2.97 V	e0			.00002 Amp	52.195 mm	150 ns
M27V402-200F4	STMicroelectronics	UVPROM	OTHER	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP40,.6	EPROMs	2.54 mm	70 Cel	3-STATE	256KX16	256K	-20 Cel	TIN LEAD	DUAL	R-GDIP-T40	3.63 V	5.72 mm	15.24 mm	Not Qualified	4194304 bit	2.97 V	e0			.00002 Amp	52.195 mm	200 ns
M27V402-120F5	STMicroelectronics	UVPROM	OTHER	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP40,.6	EPROMs	2.54 mm	85 Cel	3-STATE	256KX16	256K	-20 Cel	TIN LEAD	DUAL	R-GDIP-T40	3.63 V	5.72 mm	15.24 mm	Not Qualified	4194304 bit	2.97 V	e0			.00002 Amp	52.195 mm	120 ns
ETC2716Q-E	STMicroelectronics		OTHER	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE			10 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	EPROMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	-25 Cel		DUAL	R-XDIP-T24				Not Qualified	16384 bit					.0001 Amp		450 ns
M27V402-150F5	STMicroelectronics	UVPROM	OTHER	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP40,.6	EPROMs	2.54 mm	85 Cel	3-STATE	256KX16	256K	-20 Cel	TIN LEAD	DUAL	R-GDIP-T40	3.63 V	5.72 mm	15.24 mm	Not Qualified	4194304 bit	2.97 V	e0			.00002 Amp	52.195 mm	150 ns
M27V402-120F4	STMicroelectronics	UVPROM	OTHER	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP40,.6	EPROMs	2.54 mm	70 Cel	3-STATE	256KX16	256K	-20 Cel	TIN LEAD	DUAL	R-GDIP-T40	3.63 V	5.72 mm	15.24 mm	Not Qualified	4194304 bit	2.97 V	e0			.00002 Amp	52.195 mm	120 ns
M27V402-200F5	STMicroelectronics	UVPROM	OTHER	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP40,.6	EPROMs	2.54 mm	85 Cel	3-STATE	256KX16	256K	-20 Cel	TIN LEAD	DUAL	R-GDIP-T40	3.63 V	5.72 mm	15.24 mm	Not Qualified	4194304 bit	2.97 V	e0			.00002 Amp	52.195 mm	200 ns
82009033X	NXP Semiconductors	UVPROM	OTHER	24			UNSPECIFIED		1	NMOS		PARALLEL	ASYNCHRONOUS		4096 words		5		8	IN-LINE				100 Cel		4KX8	4K	-55 Cel		DUAL		5.5 V				32768 bit	4.5 V						450 ns
8200903JX	NXP Semiconductors	UVPROM	OTHER	24			UNSPECIFIED		1	NMOS		PARALLEL	ASYNCHRONOUS		4096 words		5		8	IN-LINE				100 Cel		4KX8	4K	-55 Cel		DUAL		5.5 V				32768 bit	4.5 V						450 ns

EPROM

EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.

EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.

EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.