Atmel EPROM 3
| Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Package Shape | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Output Characteristics | Organization | No. of Words Code | Minimum Operating Temperature | Terminal Finish | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Standby Current | Length | Maximum Access Time | Programming Voltage (V) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Atmel |
UVPROM |
COMMERCIAL |
32 |
WQCCJ |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
40 mA |
131072 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER, WINDOW |
LDCC32,.5X.6 |
EPROMs |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
0 Cel |
TIN LEAD |
QUAD |
R-CQCC-J32 |
1 |
5.5 V |
4.24 mm |
11.55 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
.00001 Amp |
14.1 mm |
150 ns |
|||||||||
|
Atmel |
UVPROM |
COMMERCIAL |
32 |
WDIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
IN-LINE, WINDOW |
2.54 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
TIN LEAD |
DUAL |
R-GDIP-T32 |
1 |
5.25 V |
5.72 mm |
15.24 mm |
Not Qualified |
1048576 bit |
4.75 V |
e0 |
42.2 mm |
100 ns |
||||||||||||||||
|
Atmel |
UVPROM |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
50 mA |
16384 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
16KX8 |
16K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-CDIP-T28 |
5.5 V |
Not Qualified |
131072 bit |
4.5 V |
e0 |
.0001 Amp |
120 ns |
12.5 |
EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.
EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.
EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.