Cypress Semiconductor EPROM 11

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
CY7C245A-18WMB	Cypress Semiconductor	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	SYNCHRONOUS	120 mA	2048 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.3	EPROMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T24	1	5.5 V	5.08 mm	7.62 mm	Not Qualified	16384 bit	4.5 V	PROGRAMMABLE SYNCHRONOUS OR ASYNCHRONOUS OUTPUT ENABLE; PROGRAMMABLE ASYNCHRONOUS REGISTERS	e0	.12 Amp	31.877 mm	12 ns	12.5
CY7C261-20WC	Cypress Semiconductor	UVPROM	COMMERCIAL	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.3	EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	TIN LEAD	DUAL	R-GDIP-T24		5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	POWER SWITCHED PROM	e0	.04 Amp	31.877 mm	20 ns
CY7C263-20WC	Cypress Semiconductor	UVPROM	COMMERCIAL	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.3	EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	TIN LEAD	DUAL	R-GDIP-T24		5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	POWER SWITCHED PROM	e0	.04 Amp	31.877 mm	20 ns
CY7C243-25WC	Cypress Semiconductor	UVPROM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	4096 words	COMMON	5	5	8	IN-LINE	DIP24,.3	EPROMs	2.54 mm	70 Cel	3-STATE	4KX8	4K	0 Cel	TIN LEAD	DUAL	R-GDIP-T24		5.5 V			Not Qualified	32768 bit	4.5 V		e0			25 ns
CY7C251-45WMB	Cypress Semiconductor	UVPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	16384 words		5	5	8	IN-LINE	DIP28,.3	EPROMs	2.54 mm	125 Cel	3-STATE	16KX8	16K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.08 mm	7.62 mm	Not Qualified	131072 bit	4.5 V	POWER SWITCHED PROM	e0	.035 Amp	37.0205 mm	45 ns
CY7C245-45WC	Cypress Semiconductor	UVPROM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	SYNCHRONOUS	90 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.3	EPROMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	0 Cel	TIN LEAD	DUAL	R-GDIP-T24		5.5 V			Not Qualified	16384 bit	4.5 V		e0	.09 Amp		70 ns	13.5
CY7C251-55WMB	Cypress Semiconductor	UVPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	16384 words		5	5	8	IN-LINE	DIP28,.3	EPROMs	2.54 mm	125 Cel	3-STATE	16KX8	16K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.08 mm	7.62 mm	Not Qualified	131072 bit	4.5 V	POWER SWITCHED PROM	e0	.035 Amp	37.0205 mm	55 ns
CY7C265-15WC	Cypress Semiconductor	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	SYNCHRONOUS	120 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.3	EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28	1	5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	PROGRAMMABLE SYNCHRONOUS OR ASYNCHRONOUS OUTPUT ENABLE	e0	.12 Amp	37.0205 mm	12 ns
CY27C256-150WI	Cypress Semiconductor	UVPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE				85 Cel	3-STATE	32KX8	32K	-40 Cel		DUAL	R-GDIP-T28		5.5 V			Not Qualified	262144 bit	4.5 V					150 ns
CY7C264-45WC	Cypress Semiconductor	UVPROM	COMMERCIAL	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.6	EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	TIN LEAD	DUAL	R-GDIP-T24		5.5 V	5.715 mm	15.24 mm	Not Qualified	65536 bit	4.5 V	POWER SWITCHED PROM	e0	.03 Amp	31.877 mm	45 ns
CY7C287-45WC	Cypress Semiconductor	UVPROM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	SYNCHRONOUS	120 mA	65536 words	COMMON	5	5	8	IN-LINE	DIP28,.3	EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V			Not Qualified	524288 bit	4.5 V	PROGRAMMABLE SYNCHRONOUS OR ASYNCHRONOUS OUTPUT ENABLE	e0			15 ns

EPROM

EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.

EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.

EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.