Intel EPROM 34

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Nominal Negative Supply Voltage	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
EPC2TI32N	Intel	CONFIGURATION MEMORY	INDUSTRIAL	32	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	SERIAL	SYNCHRONOUS	50 mA	1695680 words		3.3	3.3/5	1	FLATPACK, THIN PROFILE	TQFP32,.35SQ,32	Flash Memories	.8 mm	85 Cel	3-STATE	1695680X1	1695680	-40 Cel	MATTE TIN	QUAD	S-PQFP-G32	3	3.6 V	1.2 mm	7 mm	Not Qualified	1695680 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e3			.0001 Amp	7 mm		3.3
EPC2LC20N	Intel	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			J BEND	SERIAL	SYNCHRONOUS	50 mA	1695680 words		3.3	3.3/5	1	CHIP CARRIER	LCC20,.39SQ	Flash Memories	1.27 mm	70 Cel	3-STATE	1695680X1	1695680	0 Cel	MATTE TIN	QUAD	S-PQCC-J20	3	3.6 V	4.572 mm	8.9662 mm	Not Qualified	1695680 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e3	30	245	.0001 Amp	8.9662 mm		3.3
EPC2LI20N	Intel	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			J BEND	SERIAL	SYNCHRONOUS	50 mA	1695680 words		3.3	3.3/5	1	CHIP CARRIER	LCC20,.39SQ	Flash Memories	1.27 mm	85 Cel	3-STATE	1695680X1	1695680	-40 Cel	MATTE TIN	QUAD	S-PQCC-J20	3	3.6 V	4.572 mm	8.9662 mm	Not Qualified	1695680 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e3			.0001 Amp	8.9662 mm		3.3
EPC2LI20	Intel	CONFIGURATION MEMORY		20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			J BEND	SERIAL	SYNCHRONOUS	50 mA	1695680 words		3.3	3.3/5	1	CHIP CARRIER	LDCC20,.4SQ	Flash Memories	1.27 mm	85 Cel	3-STATE	1695680X1	1695680	-40 Cel	TIN LEAD	QUAD	S-PQCC-J20	1	3.6 V	4.572 mm	8.9662 mm	Not Qualified	1695680 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e0			.0001 Amp	8.9662 mm		3.3
EPC2TC32N	Intel	CONFIGURATION MEMORY	COMMERCIAL	32	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	SERIAL	SYNCHRONOUS	50 mA	1695680 words		3.3	3.3/5	1	FLATPACK, THIN PROFILE	TQFP32,.35SQ,32	Flash Memories	.8 mm	70 Cel	3-STATE	1695680X1	1695680	0 Cel	MATTE TIN	QUAD	S-PQFP-G32	3	3.6 V	1.2 mm	7 mm	Not Qualified	1695680 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e3	30	260	.0001 Amp	7 mm		3.3
EPC1441PI8	Intel	CONFIGURATION MEMORY		8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	SERIAL	SYNCHRONOUS	30 mA	440800 words		3.3	3.3/5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	85 Cel	3-STATE	440800X1	440800	-40 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	3.6 V	4.318 mm	7.62 mm	Not Qualified	440800 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e0			.00006 Amp	9.398 mm		3.3
EPC1441TC32N	Intel	CONFIGURATION MEMORY	COMMERCIAL	32	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	SERIAL	SYNCHRONOUS	30 mA	440800 words		3.3	3.3/5	1	FLATPACK, THIN PROFILE	TQFP32,.35SQ,32	OTP ROMs	.8 mm	70 Cel	3-STATE	440800X1	440800	0 Cel	MATTE TIN	QUAD	S-PQFP-G32	3	3.6 V	1.2 mm	7 mm	Not Qualified	440800 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e3			.00006 Amp	7 mm		3.3
EPC1PI8N	Intel	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	SERIAL	SYNCHRONOUS	50 mA	1046496 words		3.3	3.3/5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	85 Cel	3-STATE	1046496X1	1046496	-40 Cel	MATTE TIN	DUAL	R-PDIP-T8	1	3.6 V	4.318 mm	7.62 mm	Not Qualified	1046496 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e3			.0001 Amp	9.398 mm		3.3
EPC2TI32	Intel	CONFIGURATION MEMORY	INDUSTRIAL	32	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	SERIAL	SYNCHRONOUS	50 mA	1695680 words		3.3	3.3/5	1	FLATPACK, THIN PROFILE	TQFP32,.35SQ,32	Flash Memories	.8 mm	85 Cel	3-STATE	1695680X1	1695680	-40 Cel	TIN LEAD	QUAD	S-PQFP-G32	3	3.6 V	1.2 mm	7 mm	Not Qualified	1695680 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e0			.0001 Amp	7 mm		3.3
EPC2LC20	Intel	CONFIGURATION MEMORY		20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			J BEND	SERIAL	SYNCHRONOUS	50 mA	1695680 words		3.3	3.3/5	1	CHIP CARRIER	LDCC20,.4SQ	Flash Memories	1.27 mm	70 Cel	3-STATE	1695680X1	1695680	0 Cel	TIN LEAD	QUAD	S-PQCC-J20	1	3.6 V	4.572 mm	8.9662 mm	Not Qualified	1695680 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e0			.0001 Amp	8.9662 mm		3.3
2708	Intel	UVPROM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	NMOS		-5 V	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words		5		8	IN-LINE				70 Cel		1KX8	1K	0 Cel		DUAL	R-PDIP-T24		5.25 V			Not Qualified	8192 bit	4.75 V	IT ALSO REQUIRES 12V VDD SUPPLY						450 ns
EPC1441LC20N	Intel	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			J BEND	SERIAL	SYNCHRONOUS	30 mA	440800 words		3.3	3.3/5	1	CHIP CARRIER	LCC20,.39SQ	OTP ROMs	1.27 mm	70 Cel	3-STATE	440800X1	440800	0 Cel	MATTE TIN	QUAD	S-PQCC-J20	3	3.6 V	4.572 mm	8.9662 mm	Not Qualified	440800 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e3			.00006 Amp	8.9662 mm		3.3
D27128A-1	Intel		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS			THROUGH-HOLE			100 mA	16384 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	16KX8	16K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28					Not Qualified	131072 bit			e0					150 ns	12.5
QD27128A-2	Intel	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	16KX8	16K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.25 V	5.72 mm	15.24 mm	Not Qualified	131072 bit	4.75 V		e0				37.15 mm	200 ns	12.5
QD27128A-20	Intel	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	16KX8	16K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	131072 bit	4.5 V		e0				37.15 mm	200 ns	12.5
EPC2TC32	Intel	CONFIGURATION MEMORY		32	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	SERIAL	SYNCHRONOUS	50 mA	1695680 words		3.3	3.3/5	1	FLATPACK, THIN PROFILE	TQFP32,.35SQ,32	Flash Memories	.8 mm	70 Cel	3-STATE	1695680X1	1695680	0 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQFP-G32	3	3.6 V	1.2 mm	7 mm	Not Qualified	1695680 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e0	30	235	.0001 Amp	7 mm		3.3
EPC1LC20N	Intel	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			J BEND	SERIAL	SYNCHRONOUS	50 mA	1046496 words		3.3	3.3/5	1	CHIP CARRIER	LCC20,.39SQ	OTP ROMs	1.27 mm	70 Cel	3-STATE	1046496X1	1046496	0 Cel	MATTE TIN	QUAD	S-PQCC-J20	3	3.6 V	4.572 mm	8.9662 mm	Not Qualified	1046496 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e3	30	245	.0001 Amp	8.9662 mm		3.3
MR27C6425	Intel	UVPROM	MILITARY	32	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B		NO LEAD			30 mA	8192 words	COMMON	5	5	8	CHIP CARRIER	LCC32,.45X.55	EPROMs	1.27 mm	125 Cel	3-STATE	8KX8	8K	-55 Cel	Tin/Lead (Sn/Pb)	QUAD	R-XQCC-N32					Not Qualified	65536 bit			e0			.00014 Amp		250 ns	12.5
LD27128A2	Intel	UVPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS			THROUGH-HOLE			100 mA	16384 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	16KX8	16K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28						131072 bit			e0					200 ns	12.5
MD27C6420	Intel	UVPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC	NO	1	CMOS	38535Q/M;38534H;883B		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28		5.5 V			Not Qualified	65536 bit	4.5 V		e0			.00014 Amp		200 ns	12.5
MD27C6435	Intel	UVPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC	NO	1	CMOS	38535Q/M;38534H;883B		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28		5.5 V			Not Qualified	65536 bit	4.5 V		e0			.00014 Amp		350 ns	12.5
TD27128A-20	Intel	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	16KX8	16K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	131072 bit	4.5 V		e0				37.15 mm	200 ns	12.5
EPC1441LC20	Intel	CONFIGURATION MEMORY		20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			J BEND	SERIAL	SYNCHRONOUS	30 mA	440800 words		3.3	3.3/5	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs	1.27 mm	70 Cel	3-STATE	440800X1	440800	0 Cel	TIN LEAD	QUAD	S-PQCC-J20	1	3.6 V	4.572 mm	8.9662 mm	Not Qualified	440800 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e0			.00006 Amp	8.9662 mm		3.3
EPC1441PC8	Intel	CONFIGURATION MEMORY		8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	SERIAL	SYNCHRONOUS	30 mA	440800 words		3.3	3.3/5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	440800X1	440800	0 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	3.6 V	4.318 mm	7.62 mm	Not Qualified	440800 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e0			.00006 Amp	9.398 mm		3.3
D2716-1	Intel	UVPROM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO		MOS			THROUGH-HOLE			100 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	EPROMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T24					Not Qualified	16384 bit			e0					350 ns	25
MD27512-20	Intel	UVPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC	NO		MOS	38535Q/M;38534H;883B		THROUGH-HOLE			150 mA	65536 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	64KX8	64K	-55 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28					Not Qualified	524288 bit			e0					200 ns
EPC1LC20	Intel	CONFIGURATION MEMORY		20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			J BEND	SERIAL	SYNCHRONOUS	50 mA	1046496 words		3.3	5	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs	1.27 mm	70 Cel	3-STATE	1046496X1	1046496	0 Cel	TIN LEAD	QUAD	S-PQCC-J20	1	3.6 V	4.572 mm	8.9662 mm	Not Qualified	1046496 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e0	30	220	.0001 Amp	8.9662 mm		3.3
EPC1PI8	Intel	CONFIGURATION MEMORY		8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	SERIAL	SYNCHRONOUS	50 mA	1046496 words		3.3	5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	85 Cel	3-STATE	1046496X1	1046496	-40 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	3.6 V	4.318 mm	7.62 mm	Not Qualified	1046496 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e0			.0001 Amp	9.398 mm		3.3
D2764A-4	Intel	UVPROM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS			THROUGH-HOLE			75 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28					Not Qualified	65536 bit			e0					450 ns	12.5
D27C040-150V10	Intel	UVPROM	COMMERCIAL	32	DIP	RECTANGULAR	CERAMIC	NO		CMOS			THROUGH-HOLE			50 mA	524288 words	COMMON	5	5	8	IN-LINE	DIP32,.6	EPROMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T32					Not Qualified	4194304 bit			e0			.0001 Amp		150 ns
D27C400-150V10	Intel	UVPROM	COMMERCIAL	40	DIP	RECTANGULAR	CERAMIC	NO		CMOS			THROUGH-HOLE			50 mA	262144 words	COMMON	5	5	16	IN-LINE	DIP40(UNSPEC)	EPROMs		70 Cel	3-STATE	256KX16	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T40					Not Qualified	4194304 bit			e0			.0001 Amp		150 ns
EPC1441LI20	Intel	CONFIGURATION MEMORY		20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			J BEND	SERIAL	SYNCHRONOUS	30 mA	440800 words		3.3	3.3/5	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs	1.27 mm	85 Cel	3-STATE	440800X1	440800	-40 Cel	TIN LEAD	QUAD	S-PQCC-J20	1	3.6 V	4.572 mm	8.9662 mm	Not Qualified	440800 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e0			.00006 Amp	8.9662 mm		3.3
EPC1PC8	Intel	CONFIGURATION MEMORY		8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	SERIAL	SYNCHRONOUS	50 mA	1046496 words		3.3	5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	1046496X1	1046496	0 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	3.6 V	4.318 mm	7.62 mm	Not Qualified	1046496 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e0			.0001 Amp	9.398 mm		3.3
QD2764A	Intel	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	75 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.25 V	5.72 mm	15.24 mm	Not Qualified	65536 bit	4.75 V		e0				37.15 mm	250 ns	12.5

EPROM

EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.

EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.

EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.