NXP Semiconductors EPROM 19

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	No. of Words	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Length	Maximum Access Time
8510201ZA	NXP Semiconductors	UVPROM		28			CERAMIC, GLASS-SEALED		1	CMOS					16384 words		8	IN-LINE				16KX8	16K			DUAL						131072 bit				450 ns
8510202YA	NXP Semiconductors	UVPROM		28			CERAMIC, GLASS-SEALED		1	CMOS					16384 words		8	IN-LINE				16KX8	16K			DUAL						131072 bit				450 ns
27C512/BXA-20	NXP Semiconductors	UVPROM	MILITARY	28		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	65536 words	5	8	IN-LINE		125 Cel	3-STATE	64KX8	64K	-55 Cel		DUAL	R-CDIP-T28	5.5 V			Not Qualified	524288 bit	4.5 V			200 ns
8510201YX	NXP Semiconductors	UVPROM		28			CERAMIC, GLASS-SEALED		1	CMOS					16384 words		8	IN-LINE				16KX8	16K			DUAL						131072 bit				450 ns
5962-8606302YX	NXP Semiconductors	UVPROM	MILITARY	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	32768 words	5	8	CHIP CARRIER, WINDOW	1.27 mm	125 Cel		32KX8	32K	-55 Cel	TIN LEAD	QUAD	R-CQCC-N32	5.5 V	3.556 mm	11.43 mm	Not Qualified	262144 bit	4.5 V	e0	13.97 mm	250 ns
8510203ZA	NXP Semiconductors	UVPROM	MILITARY	32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	8192 words	5	8	CHIP CARRIER		125 Cel		8KX8	8K	-55 Cel		QUAD	R-CQCC-N32	5.5 V			Not Qualified	65536 bit	4.5 V			200 ns
82009033X	NXP Semiconductors	UVPROM	OTHER	24			UNSPECIFIED		1	NMOS			PARALLEL	ASYNCHRONOUS	4096 words	5	8	IN-LINE		100 Cel		4KX8	4K	-55 Cel		DUAL		5.5 V				32768 bit	4.5 V			450 ns
5962-8606301YA	NXP Semiconductors	UVPROM	MILITARY	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	32768 words	5	8	CHIP CARRIER, WINDOW	1.27 mm	125 Cel		32KX8	32K	-55 Cel	TIN LEAD	QUAD	R-CQCC-N32	5.5 V	3.556 mm	11.43 mm	Not Qualified	262144 bit	4.5 V	e0	13.97 mm	200 ns
5962-8606301YX	NXP Semiconductors	UVPROM	MILITARY	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	32768 words	5	8	CHIP CARRIER, WINDOW	1.27 mm	125 Cel		32KX8	32K	-55 Cel	TIN LEAD	QUAD	R-CQCC-N32	5.5 V	3.556 mm	11.43 mm	Not Qualified	262144 bit	4.5 V	e0	13.97 mm	200 ns
8510202ZX	NXP Semiconductors	UVPROM		28			CERAMIC, GLASS-SEALED		1	CMOS					16384 words		8	IN-LINE				16KX8	16K			DUAL						131072 bit				450 ns
8510203YA	NXP Semiconductors	UVPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	8192 words	5	8	IN-LINE		125 Cel		8KX8	8K	-55 Cel		DUAL	R-GDIP-T28	5.5 V				65536 bit	4.5 V			200 ns
8200903JX	NXP Semiconductors	UVPROM	OTHER	24			UNSPECIFIED		1	NMOS			PARALLEL	ASYNCHRONOUS	4096 words	5	8	IN-LINE		100 Cel		4KX8	4K	-55 Cel		DUAL		5.5 V				32768 bit	4.5 V			450 ns
8510203ZX	NXP Semiconductors	UVPROM	MILITARY	32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	8192 words	5	8	CHIP CARRIER		125 Cel		8KX8	8K	-55 Cel		QUAD	R-CQCC-N32	5.5 V			Not Qualified	65536 bit	4.5 V			200 ns
8510202ZA	NXP Semiconductors	UVPROM		28			CERAMIC, GLASS-SEALED		1	CMOS					16384 words		8	IN-LINE				16KX8	16K			DUAL						131072 bit				450 ns
8510201ZX	NXP Semiconductors	UVPROM		28			CERAMIC, GLASS-SEALED		1	CMOS					16384 words		8	IN-LINE				16KX8	16K			DUAL						131072 bit				450 ns
8510201YA	NXP Semiconductors	UVPROM		28			CERAMIC, GLASS-SEALED		1	CMOS					16384 words		8	IN-LINE				16KX8	16K			DUAL						131072 bit				450 ns
8510203YX	NXP Semiconductors	UVPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	8192 words	5	8	IN-LINE		125 Cel		8KX8	8K	-55 Cel		DUAL	R-GDIP-T28	5.5 V			Not Qualified	65536 bit	4.5 V			200 ns
8510202YX	NXP Semiconductors	UVPROM		28			CERAMIC, GLASS-SEALED		1	CMOS					16384 words		8	IN-LINE				16KX8	16K			DUAL						131072 bit				450 ns
5962-8606302YA	NXP Semiconductors	UVPROM	MILITARY	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	32768 words	5	8	CHIP CARRIER, WINDOW	1.27 mm	125 Cel		32KX8	32K	-55 Cel	TIN LEAD	QUAD	R-CQCC-N32	5.5 V	3.556 mm	11.43 mm	Not Qualified	262144 bit	4.5 V	e0	13.97 mm	250 ns

EPROM

EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.

EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.

EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.