Samsung EPROM 3

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Output Characteristics Organization No. of Words Code Minimum Operating Temperature Terminal Finish Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Length Maximum Access Time Programming Voltage (V)

KM4232W259A-6

Samsung

UVPROM

COMMERCIAL

120

FQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

262144 words

5

32

FLATPACK, FINE PITCH

.5 mm

70 Cel

256KX32

256K

0 Cel

QUAD

R-PQFP-G120

5.5 V

2.3 mm

14 mm

Not Qualified

8388608 bit

4.5 V

TTL COMPATIBLE I/O

20 mm

60 ns

KM4232W259A-5

Samsung

UVPROM

COMMERCIAL

120

FQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

262144 words

5

32

FLATPACK, FINE PITCH

.5 mm

70 Cel

256KX32

256K

0 Cel

QUAD

R-PQFP-G120

5.5 V

2.3 mm

14 mm

Not Qualified

8388608 bit

4.5 V

TTL COMPATIBLE I/O

20 mm

50 ns

AM27C020-55DC500

Samsung

UVPROM

INDUSTRIAL

52

VFLGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BUTT

PARALLEL

ASYNCHRONOUS

536870912 words

3.3

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

85 Cel

512MX8

512M

-40 Cel

BOTTOM

R-PBGA-B52

3.6 V

.65 mm

12 mm

4294967296 bit

2.7 V

17 mm

25 ns

EPROM

EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.

EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.

EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.