Toshiba EPROM 112

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Output Characteristics Organization No. of Words Code Minimum Operating Temperature Terminal Finish Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Length Maximum Access Time Programming Voltage (V)

TMM27128AD-20

Toshiba

COMMERCIAL

28

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

16384 words

COMMON

5

5

8

IN-LINE

DIP28,.6

EPROMs

2.54 mm

70 Cel

3-STATE

16KX8

16K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T28

Not Qualified

131072 bit

e0

200 ns

12.5

TMM2732D

Toshiba

COMMERCIAL

24

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

4096 words

COMMON

5

5

8

IN-LINE

DIP24,.6

EPROMs

2.54 mm

70 Cel

3-STATE

4KX8

4K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T24

Not Qualified

32768 bit

e0

350 ns

25

TMM27512AD-17

Toshiba

UVPROM

COMMERCIAL

28

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

NMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

120 mA

65536 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP28,.6

EPROMs

2.54 mm

70 Cel

3-STATE

64KX8

64K

0 Cel

TIN LEAD

DUAL

R-GDIP-T28

5.25 V

5.2 mm

15.24 mm

Not Qualified

524288 bit

4.75 V

e0

170 ns

TMM2732D-1

Toshiba

INDUSTRIAL

24

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

4096 words

COMMON

5

5

8

IN-LINE

DIP24,.6

EPROMs

2.54 mm

85 Cel

3-STATE

4KX8

4K

-40 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T24

Not Qualified

32768 bit

e0

350 ns

25

TMM27512AD-250

Toshiba

UVPROM

COMMERCIAL

28

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

NMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

130 mA

65536 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP28,.6

EPROMs

2.54 mm

70 Cel

3-STATE

64KX8

64K

0 Cel

TIN LEAD

DUAL

R-GDIP-T28

5.5 V

5.2 mm

15.24 mm

Not Qualified

524288 bit

4.5 V

e0

250 ns

TC571000D-25

Toshiba

UVPROM

INDUSTRIAL

32

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

131072 words

5

8

IN-LINE, WINDOW

2.54 mm

85 Cel

128KX8

128K

-40 Cel

TIN LEAD

DUAL

R-GDIP-T32

5.25 V

6.1 mm

15.24 mm

Not Qualified

1048576 bit

4.75 V

e0

42 mm

250 ns

TC574200D-120

Toshiba

UVPROM

COMMERCIAL

40

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

524288 words

5

8

IN-LINE, WINDOW

16

2.54 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

TIN LEAD

DUAL

R-GDIP-T40

5.5 V

6.05 mm

15.24 mm

Not Qualified

4194304 bit

4.5 V

e0

52.07 mm

120 ns

TC571000D-20

Toshiba

UVPROM

INDUSTRIAL

32

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

131072 words

5

8

IN-LINE, WINDOW

2.54 mm

85 Cel

128KX8

128K

-40 Cel

TIN LEAD

DUAL

R-GDIP-T32

5.25 V

6.1 mm

15.24 mm

Not Qualified

1048576 bit

4.75 V

e0

42 mm

200 ns

TC571001D-20

Toshiba

UVPROM

INDUSTRIAL

32

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

131072 words

5

8

IN-LINE, WINDOW

2.54 mm

85 Cel

128KX8

128K

-40 Cel

TIN LEAD

DUAL

R-GDIP-T32

5.25 V

6.1 mm

15.24 mm

Not Qualified

1048576 bit

4.75 V

e0

42 mm

200 ns

TC57H10001AD-85

Toshiba

UVPROM

COMMERCIAL

1

CMOS

131072 words

5

8

70 Cel

128KX8

128K

0 Cel

5.25 V

Not Qualified

1048576 bit

4.75 V

85 ns

TMM27256D-20

Toshiba

COMMERCIAL

28

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

100 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

EPROMs

2.54 mm

70 Cel

3-STATE

32KX8

32K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T28

Not Qualified

262144 bit

e0

200 ns

21

TC574200D-200

Toshiba

UVPROM

COMMERCIAL

40

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

524288 words

5

8

IN-LINE, WINDOW

16

2.54 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

TIN LEAD

DUAL

R-GDIP-T40

5.5 V

6.05 mm

15.24 mm

Not Qualified

4194304 bit

4.5 V

e0

52.07 mm

200 ns

TC571000AD-150

Toshiba

UVPROM

COMMERCIAL

32

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

131072 words

5

8

IN-LINE, WINDOW

2.54 mm

70 Cel

3-STATE

128KX8

128K

0 Cel

TIN LEAD

DUAL

R-GDIP-T32

5.5 V

6 mm

15.24 mm

Not Qualified

1048576 bit

4.5 V

e0

42 mm

150 ns

TC57H0124AD-100

Toshiba

UVPROM

COMMERCIAL

1

CMOS

65536 words

5

16

70 Cel

64KX16

64K

0 Cel

5.5 V

Not Qualified

1048576 bit

4.5 V

100 ns

TMM27256AD-15

Toshiba

COMMERCIAL

28

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

100 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

EPROMs

2.54 mm

70 Cel

3-STATE

32KX8

32K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T28

Not Qualified

262144 bit

e0

150 ns

12.5

TMM27512AD-200

Toshiba

UVPROM

COMMERCIAL

28

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

NMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

130 mA

65536 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP28,.6

EPROMs

2.54 mm

70 Cel

3-STATE

64KX8

64K

0 Cel

TIN LEAD

DUAL

R-GDIP-T28

5.5 V

5.2 mm

15.24 mm

Not Qualified

524288 bit

4.5 V

e0

200 ns

TC57H1024AD-85

Toshiba

UVPROM

COMMERCIAL

40

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

65536 words

5

16

IN-LINE, WINDOW

2.54 mm

70 Cel

3-STATE

64KX16

64K

0 Cel

TIN LEAD

DUAL

R-GDIP-T40

5.25 V

6.05 mm

15.24 mm

Not Qualified

1048576 bit

4.75 V

e0

52.07 mm

85 ns

TC571001D-25

Toshiba

UVPROM

INDUSTRIAL

32

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

131072 words

5

8

IN-LINE, WINDOW

2.54 mm

85 Cel

128KX8

128K

-40 Cel

TIN LEAD

DUAL

R-GDIP-T32

5.25 V

6.1 mm

15.24 mm

Not Qualified

1048576 bit

4.75 V

e0

42 mm

250 ns

TMM27512D-200

Toshiba

COMMERCIAL

28

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

130 mA

65536 words

COMMON

5

5

8

IN-LINE

DIP28,.6

EPROMs

2.54 mm

70 Cel

3-STATE

64KX8

64K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T28

Not Qualified

524288 bit

e0

200 ns

TC574000D-150

Toshiba

UVPROM

COMMERCIAL

32

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

524288 words

5

8

IN-LINE, WINDOW

2.54 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

TIN LEAD

DUAL

R-GDIP-T32

5.5 V

6 mm

15.24 mm

Not Qualified

4194304 bit

4.5 V

e0

42 mm

150 ns

TMM27128DI-20

Toshiba

INDUSTRIAL

28

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

16384 words

COMMON

5

5

8

IN-LINE

DIP28,.6

EPROMs

2.54 mm

85 Cel

3-STATE

16KX8

16K

-40 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T28

Not Qualified

131072 bit

e0

200 ns

21

TMM27256BD-15

Toshiba

UVPROM

COMMERCIAL

28

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

NMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

100 mA

32768 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP28,.6

EPROMs

2.54 mm

70 Cel

3-STATE

32KX8

32K

0 Cel

TIN LEAD

DUAL

R-GDIP-T28

5.25 V

5.2 mm

15.24 mm

Not Qualified

262144 bit

4.75 V

e0

150 ns

12.5

TC5716200D-150

Toshiba

UVPROM

COMMERCIAL

42

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

2097152 words

5

8

IN-LINE, WINDOW

16

2.54 mm

70 Cel

3-STATE

2MX8

2M

0 Cel

TIN LEAD

DUAL

R-GDIP-T42

5.5 V

6.05 mm

15.24 mm

Not Qualified

16777216 bit

4.5 V

e0

54.61 mm

150 ns

TC57H1000AD-100

Toshiba

UVPROM

COMMERCIAL

32

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

131072 words

5

8

IN-LINE, WINDOW

2.54 mm

70 Cel

3-STATE

128KX8

128K

0 Cel

TIN LEAD

DUAL

R-GDIP-T32

5.5 V

6 mm

15.24 mm

Not Qualified

1048576 bit

4.5 V

e0

42 mm

100 ns

TMM27256BD-200

Toshiba

UVPROM

COMMERCIAL

28

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

NMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

120 mA

32768 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP28,.6

EPROMs

2.54 mm

70 Cel

3-STATE

32KX8

32K

0 Cel

TIN LEAD

DUAL

R-GDIP-T28

5.5 V

5.2 mm

15.24 mm

Not Qualified

262144 bit

4.5 V

e0

200 ns

12.5

TC574096D-10

Toshiba

UVPROM

COMMERCIAL

40

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

262144 words

5

16

IN-LINE, WINDOW

2.54 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

TIN LEAD

DUAL

R-GDIP-T40

5.25 V

6.05 mm

15.24 mm

Not Qualified

4194304 bit

4.75 V

e0

52.07 mm

100 ns

TMM2764DI

Toshiba

INDUSTRIAL

28

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

8192 words

COMMON

5

5

8

IN-LINE

DIP28,.6

EPROMs

2.54 mm

85 Cel

3-STATE

8KX8

8K

-40 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T28

Not Qualified

65536 bit

e0

250 ns

21

TC571001D-15

Toshiba

UVPROM

COMMERCIAL

32

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

131072 words

5

8

IN-LINE, WINDOW

2.54 mm

70 Cel

128KX8

128K

0 Cel

TIN LEAD

DUAL

R-GDIP-T32

5.25 V

6.1 mm

15.24 mm

Not Qualified

1048576 bit

4.75 V

e0

42 mm

150 ns

TC574000DI-200

Toshiba

UVPROM

INDUSTRIAL

32

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

524288 words

5

8

IN-LINE, WINDOW

2.54 mm

85 Cel

3-STATE

512KX8

512K

-40 Cel

TIN LEAD

DUAL

R-GDIP-T32

5.5 V

6 mm

15.24 mm

Not Qualified

4194304 bit

4.5 V

e0

42 mm

200 ns

TC574000D-15

Toshiba

UVPROM

COMMERCIAL

32

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

524288 words

5

8

IN-LINE, WINDOW

2.54 mm

70 Cel

512KX8

512K

0 Cel

TIN LEAD

DUAL

R-GDIP-T32

5.5 V

6 mm

15.24 mm

Not Qualified

4194304 bit

4.5 V

e0

42 mm

150 ns

TMM27256AD-200

Toshiba

COMMERCIAL

28

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

100 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

EPROMs

2.54 mm

70 Cel

3-STATE

32KX8

32K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T28

Not Qualified

262144 bit

e0

200 ns

12.5

TMM2764AD-150

Toshiba

COMMERCIAL

28

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

8192 words

COMMON

5

5

8

IN-LINE

DIP28,.6

EPROMs

2.54 mm

70 Cel

3-STATE

8KX8

8K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T28

Not Qualified

65536 bit

e0

150 ns

12.5

TC57H1025AD-70

Toshiba

UVPROM

COMMERCIAL

40

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

65536 words

5

16

IN-LINE, WINDOW

2.54 mm

70 Cel

64KX16

64K

0 Cel

TIN LEAD

DUAL

R-GDIP-T40

5.25 V

6.05 mm

15.24 mm

Not Qualified

1048576 bit

4.75 V

e0

52.07 mm

70 ns

TC57H1024D-85

Toshiba

UVPROM

COMMERCIAL

40

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

65536 words

5

16

IN-LINE, WINDOW

2.54 mm

70 Cel

3-STATE

64KX16

64K

0 Cel

TIN LEAD

DUAL

R-GDIP-T40

5.25 V

6.05 mm

15.24 mm

Not Qualified

1048576 bit

4.75 V

e0

52.07 mm

85 ns

TC57H1025AD-55

Toshiba

UVPROM

COMMERCIAL

40

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

65536 words

5

16

IN-LINE, WINDOW

2.54 mm

70 Cel

3-STATE

64KX16

64K

0 Cel

TIN LEAD

DUAL

R-GDIP-T40

5.25 V

6.05 mm

15.24 mm

Not Qualified

1048576 bit

4.75 V

e0

52.07 mm

55 ns

TC57512AD-15

Toshiba

UVPROM

INDUSTRIAL

28

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

65536 words

5

8

IN-LINE, WINDOW

2.54 mm

85 Cel

3-STATE

64KX8

64K

-40 Cel

TIN LEAD

DUAL

R-GDIP-T28

5.25 V

6 mm

15.24 mm

Not Qualified

524288 bit

4.75 V

e0

36.83 mm

150 ns

TMM27256BDI-15

Toshiba

UVPROM

INDUSTRIAL

28

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

NMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

120 mA

32768 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP28,.6

EPROMs

2.54 mm

85 Cel

3-STATE

32KX8

32K

-40 Cel

TIN LEAD

DUAL

R-GDIP-T28

5.25 V

5.2 mm

15.24 mm

Not Qualified

262144 bit

4.75 V

e0

150 ns

12.5

TC571001AD-150

Toshiba

UVPROM

COMMERCIAL

32

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

131072 words

5

8

IN-LINE, WINDOW

2.54 mm

70 Cel

3-STATE

128KX8

128K

0 Cel

TIN LEAD

DUAL

R-GDIP-T32

5.5 V

6 mm

15.24 mm

Not Qualified

1048576 bit

4.5 V

e0

42 mm

150 ns

TC57400AD-150

Toshiba

UVPROM

COMMERCIAL

1

CMOS

524288 words

5

8

70 Cel

512KX8

512K

0 Cel

5.5 V

Not Qualified

4194304 bit

4.5 V

150 ns

TC574096D-150

Toshiba

UVPROM

COMMERCIAL

40

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

262144 words

5

16

IN-LINE, WINDOW

2.54 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

TIN LEAD

DUAL

R-GDIP-T40

5.5 V

6.05 mm

15.24 mm

Not Qualified

4194304 bit

4.5 V

e0

52.07 mm

150 ns

TC574000D-20

Toshiba

UVPROM

COMMERCIAL

32

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

524288 words

5

8

IN-LINE, WINDOW

2.54 mm

70 Cel

512KX8

512K

0 Cel

TIN LEAD

DUAL

R-GDIP-T32

5.5 V

6 mm

15.24 mm

Not Qualified

4194304 bit

4.5 V

e0

42 mm

200 ns

TC574000AD-120

Toshiba

UVPROM

COMMERCIAL

32

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

524288 words

5

8

IN-LINE, WINDOW

2.54 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

TIN LEAD

DUAL

R-GDIP-T32

5.5 V

6 mm

15.24 mm

Not Qualified

4194304 bit

4.5 V

e0

42 mm

120 ns

TC57H1024D-100

Toshiba

UVPROM

COMMERCIAL

40

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

65536 words

5

16

IN-LINE, WINDOW

2.54 mm

70 Cel

3-STATE

64KX16

64K

0 Cel

TIN LEAD

DUAL

R-GDIP-T40

5.5 V

6.05 mm

15.24 mm

Not Qualified

1048576 bit

4.5 V

e0

52.07 mm

100 ns

TMM27128D-15

Toshiba

COMMERCIAL

28

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

16384 words

COMMON

5

5

8

IN-LINE

DIP28,.6

EPROMs

2.54 mm

70 Cel

3-STATE

16KX8

16K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T28

Not Qualified

131072 bit

e0

150 ns

21

TC57H1026D-35

Toshiba

UVPROM

COMMERCIAL

40

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

65536 words

5

16

IN-LINE, WINDOW

2.54 mm

70 Cel

3-STATE

64KX16

64K

0 Cel

TIN LEAD

DUAL

R-GDIP-T40

5.25 V

6.05 mm

15.24 mm

Not Qualified

1048576 bit

4.75 V

e0

52.07 mm

35 ns

TC571000D-15

Toshiba

UVPROM

COMMERCIAL

32

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

131072 words

5

8

IN-LINE, WINDOW

2.54 mm

70 Cel

128KX8

128K

0 Cel

TIN LEAD

DUAL

R-GDIP-T32

5.25 V

6.1 mm

15.24 mm

Not Qualified

1048576 bit

4.75 V

e0

42 mm

150 ns

TC57H1026D-45

Toshiba

UVPROM

COMMERCIAL

40

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

65536 words

5

16

IN-LINE, WINDOW

2.54 mm

70 Cel

3-STATE

64KX16

64K

0 Cel

TIN LEAD

DUAL

R-GDIP-T40

5.25 V

6.05 mm

15.24 mm

Not Qualified

1048576 bit

4.75 V

e0

52.07 mm

45 ns

TMM27128ADI-15

Toshiba

INDUSTRIAL

28

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

16384 words

COMMON

5

5

8

IN-LINE

DIP28,.6

EPROMs

2.54 mm

85 Cel

3-STATE

16KX8

16K

-40 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T28

Not Qualified

131072 bit

e0

150 ns

12.5

EPROM

EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.

EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.

EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.