EPROM

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Output Characteristics Organization No. of Words Code Minimum Operating Temperature Terminal Finish Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Length Maximum Access Time Programming Voltage (V)

WS57C51C-70T

STMicroelectronics

UVPROM

COMMERCIAL

28

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

107 mA

16384 words

5

5

8

IN-LINE, WINDOW

DIP28,.3

EPROMs

2.54 mm

70 Cel

3-STATE

16KX8

16K

0 Cel

TIN LEAD

DUAL

R-GDIP-T28

5.5 V

5.08 mm

7.62 mm

Not Qualified

131072 bit

4.5 V

e0

.03 Amp

37.085 mm

70 ns

M27V160-110F1

STMicroelectronics

UVPROM

COMMERCIAL

42

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

2097152 words

COMMON

3.3

3.3

8

IN-LINE, WINDOW

DIP42,.6

16

EPROMs

2.54 mm

70 Cel

3-STATE

2MX8

2M

0 Cel

MATTE TIN

DUAL

R-GDIP-T42

3.63 V

5.71 mm

15.24 mm

Not Qualified

16777216 bit

2.97 V

e3

.00002 Amp

110 ns

M27W512-100F6

STMicroelectronics

UVPROM

INDUSTRIAL

28

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

15 mA

65536 words

COMMON

3

3/3.3

8

IN-LINE, WINDOW

DIP28,.6

EPROMs

2.54 mm

85 Cel

3-STATE

64KX8

64K

-40 Cel

TIN

DUAL

R-GDIP-T28

3.6 V

5.97 mm

15.24 mm

Not Qualified

524288 bit

2.7 V

e3

.000015 Amp

36.92 mm

100 ns

WS57C49C-35CMB

STMicroelectronics

UVPROM

MILITARY

28

WQCCN

SQUARE

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

MIL-STD-883 Class B

NO LEAD

PARALLEL

ASYNCHRONOUS

50 mA

8192 words

COMMON

5

5

8

CHIP CARRIER, WINDOW

LCC28,.45SQ

EPROMs

1.27 mm

125 Cel

3-STATE

8KX8

8K

-55 Cel

TIN LEAD

QUAD

S-CQCC-N28

3.3 mm

11.455 mm

Not Qualified

65536 bit

e0

.035 Amp

11.455 mm

35 ns

5962-9065802JA

STMicroelectronics

UVPROM

MILITARY

24

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

50 mA

4096 words

COMMON

5

5

8

IN-LINE

DIP24,.6

EPROMs

2.54 mm

125 Cel

3-STATE

4KX8

4K

-55 Cel

TIN LEAD

DUAL

R-GDIP-T24

5.5 V

Not Qualified

32768 bit

4.5 V

e0

.035 Amp

55 ns

M2764AF1

STMicroelectronics

UVPROM

COMMERCIAL

28

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

NMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

75 mA

8192 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP28,.6

EPROMs

2.54 mm

70 Cel

3-STATE

8KX8

8K

0 Cel

TIN LEAD

DUAL

R-GDIP-T28

5.25 V

5.71 mm

15.24 mm

Not Qualified

65536 bit

4.75 V

e0

250 ns

12.5

M27V402-150F1

STMicroelectronics

UVPROM

COMMERCIAL

40

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

20 mA

262144 words

COMMON

3.3

3.3

16

IN-LINE, WINDOW

DIP40,.6

EPROMs

2.54 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

TIN LEAD

DUAL

R-GDIP-T40

3.63 V

5.72 mm

15.24 mm

Not Qualified

4194304 bit

2.97 V

e0

.00002 Amp

52.195 mm

150 ns

M27W402-100F6

STMicroelectronics

UVPROM

INDUSTRIAL

40

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

262144 words

3

16

IN-LINE, WINDOW

2.54 mm

85 Cel

256KX16

256K

-40 Cel

MATTE TIN

DUAL

R-GDIP-T40

3.6 V

5.97 mm

15.24 mm

Not Qualified

4194304 bit

2.7 V

THIS SPEED ALSO GUARANTEES 80NS ACCESS TIME AT VCC = 3.0V TO 3.6V

e3

52.195 mm

100 ns

M87C257-45XF7

STMicroelectronics

UVPROM

INDUSTRIAL

28

DIP

RECTANGULAR

CERAMIC

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

EPROMs

2.54 mm

105 Cel

3-STATE

32KX8

32K

-40 Cel

MATTE TIN

DUAL

R-XDIP-T28

15.24 mm

Not Qualified

262144 bit

LG-MAX

e3

.0001 Amp

38.1 mm

45 ns

M27W201-120F6

STMicroelectronics

UVPROM

INDUSTRIAL

32

WDIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

15 mA

262144 words

COMMON

3

3/3.3

8

IN-LINE, WINDOW

DIP32,.6

EPROMs

2.54 mm

85 Cel

3-STATE

256KX8

256K

-40 Cel

MATTE TIN

DUAL

R-CDIP-T32

3.6 V

5.97 mm

15.24 mm

Not Qualified

2097152 bit

2.7 V

e3

.000015 Amp

41.885 mm

100 ns

TTV27C256N-15C-4

STMicroelectronics

UVPROM

COMMERCIAL

28

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

32768 words

COMMON

5

8

IN-LINE, WINDOW

DIP28,.6

2.54 mm

70 Cel

3-STATE

32KX8

32K

0 Cel

DUAL

R-CDIP-T28

5.5 V

5.72 mm

15.26 mm

262144 bit

4.5 V

.0001 Amp

36.92 mm

150 ns

12.75

M87C257-80XF3

STMicroelectronics

UVPROM

AUTOMOTIVE

28

WDIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

32768 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP28,.6

EPROMs

2.54 mm

125 Cel

3-STATE

32KX8

32K

-40 Cel

MATTE TIN

DUAL

R-CDIP-T28

5.25 V

5.72 mm

15.24 mm

Not Qualified

262144 bit

4.75 V

e3

.0001 Amp

36.92 mm

80 ns

M87C257-20F7

STMicroelectronics

UVPROM

INDUSTRIAL

28

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

30 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

EPROMs

2.54 mm

105 Cel

3-STATE

32KX8

32K

-40 Cel

MATTE TIN

DUAL

R-XDIP-T28

Not Qualified

262144 bit

e3

.0001 Amp

200 ns

5962-87529023C

STMicroelectronics

UVPROM

MILITARY

28

WQCCN

SQUARE

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

38535Q/M;38534H;883B

NO LEAD

PARALLEL

SYNCHRONOUS

120 mA

2048 words

COMMON

5

5

8

CHIP CARRIER, WINDOW

LCC28,.45SQ

EPROMs

1.27 mm

125 Cel

REGISTERED

2KX8

2K

-55 Cel

Gold (Au)

QUAD

S-CQCC-N28

5.5 V

2.8956 mm

11.43 mm

Not Qualified

16384 bit

4.5 V

e4

.12 Amp

11.43 mm

35 ns

13.5

WS57C64F-55D

STMicroelectronics

COMMERCIAL

28

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

98 mA

8192 words

COMMON

5

5

8

IN-LINE

DIP28,.6

EPROMs

2.54 mm

70 Cel

3-STATE

8KX8

8K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T28

Not Qualified

65536 bit

e0

.0005 Amp

55 ns

13.5

5962-87650043C

STMicroelectronics

UVPROM

MILITARY

28

WQCCN

SQUARE

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

38535Q/M;38534H;883B

NO LEAD

PARALLEL

ASYNCHRONOUS

120 mA

2048 words

COMMON

5

5

8

CHIP CARRIER, WINDOW

LCC28,.45SQ

EPROMs

1.27 mm

125 Cel

3-STATE

2KX8

2K

-55 Cel

Gold (Au)

QUAD

S-CQCC-N28

5.5 V

3.3 mm

11.455 mm

Not Qualified

16384 bit

4.5 V

e4

.12 Amp

11.455 mm

45 ns

13.5

5962-87650013C

STMicroelectronics

UVPROM

MILITARY

28

WQCCN

SQUARE

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

38535Q/M;38534H;883B

NO LEAD

PARALLEL

ASYNCHRONOUS

120 mA

2048 words

COMMON

5

5

8

CHIP CARRIER, WINDOW

LCC28,.45SQ

EPROMs

1.27 mm

125 Cel

3-STATE

2KX8

2K

-55 Cel

Gold (Au)

QUAD

S-CQCC-N28

5.5 V

2.8956 mm

11.43 mm

Not Qualified

16384 bit

4.5 V

e4

.12 Amp

11.43 mm

50 ns

13.5

M87C257-60XF6

STMicroelectronics

UVPROM

INDUSTRIAL

28

WDIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

32768 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP28,.6

EPROMs

2.54 mm

85 Cel

3-STATE

32KX8

32K

-40 Cel

MATTE TIN

DUAL

R-CDIP-T28

5.25 V

5.72 mm

15.24 mm

Not Qualified

262144 bit

4.75 V

e3

.0001 Amp

36.92 mm

60 ns

TTV27C256N-12C-21

STMicroelectronics

UVPROM

INDUSTRIAL

28

DIP

RECTANGULAR

CERAMIC

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

EPROMs

2.54 mm

105 Cel

3-STATE

32KX8

32K

-40 Cel

DUAL

R-XDIP-T28

Not Qualified

262144 bit

.0001 Amp

120 ns

12.75

5962-90658023C

STMicroelectronics

UVPROM

MILITARY

28

QCCN

SQUARE

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

38535Q/M;38534H;883B

NO LEAD

PARALLEL

ASYNCHRONOUS

50 mA

4096 words

COMMON

5

5

8

CHIP CARRIER

LCC28,.45SQ

EPROMs

1.27 mm

125 Cel

3-STATE

4KX8

4K

-55 Cel

Gold (Au)

QUAD

S-CQCC-N28

5.5 V

Not Qualified

32768 bit

4.5 V

e4

.035 Amp

55 ns

M87C257-12F7X

STMicroelectronics

UVPROM

INDUSTRIAL

28

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

32768 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP28,.6

EPROMs

2.54 mm

105 Cel

3-STATE

32KX8

32K

-40 Cel

MATTE TIN

DUAL

R-GDIP-T28

5.5 V

5.71 mm

15.24 mm

Not Qualified

262144 bit

4.5 V

e3

.0001 Amp

120 ns

M27V800-150F1

STMicroelectronics

UVPROM

COMMERCIAL

42

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

524288 words

COMMON

3.3

3.3

16

IN-LINE, WINDOW

DIP42,.6

8

EPROMs

2.54 mm

70 Cel

3-STATE

512KX16

512K

0 Cel

TIN LEAD

DUAL

R-GDIP-T42

3.63 V

5.72 mm

15.24 mm

Not Qualified

8388608 bit

2.97 V

e0

.00002 Amp

54.635 mm

150 ns

WS57C51C-35T

STMicroelectronics

UVPROM

COMMERCIAL

28

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

164 mA

16384 words

5

5

8

IN-LINE, WINDOW

DIP28,.3

EPROMs

2.54 mm

70 Cel

3-STATE

16KX8

16K

0 Cel

TIN LEAD

DUAL

R-GDIP-T28

5.5 V

5.08 mm

7.62 mm

Not Qualified

131072 bit

4.5 V

e0

.03 Amp

37.085 mm

35 ns

5962-8751502LX

STMicroelectronics

UVPROM

MILITARY

24

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

8192 words

5

8

IN-LINE, WINDOW

2.54 mm

125 Cel

8KX8

8K

-55 Cel

DUAL

R-GDIP-T24

5.5 V

5.08 mm

7.62 mm

Not Qualified

65536 bit

4.5 V

32.005 mm

55 ns

M27V401-200L1

STMicroelectronics

UVPROM

COMMERCIAL

32

WQCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

30 mA

524288 words

COMMON

5

3.3/5

8

CHIP CARRIER, WINDOW

LCC32,.45X.55

EPROMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

TIN LEAD

QUAD

R-CQCC-N32

5.5 V

2.28 mm

11.43 mm

Not Qualified

4194304 bit

3 V

e0

.00002 Amp

13.97 mm

200 ns

M87C257-20XF6

STMicroelectronics

UVPROM

INDUSTRIAL

28

WDIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

32768 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP28,.6

EPROMs

2.54 mm

85 Cel

3-STATE

32KX8

32K

-40 Cel

MATTE TIN

DUAL

R-CDIP-T28

5.25 V

5.72 mm

15.24 mm

Not Qualified

262144 bit

4.75 V

e3

.0001 Amp

36.92 mm

150 ns

M27W201-150F6

STMicroelectronics

UVPROM

INDUSTRIAL

32

WDIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

15 mA

262144 words

COMMON

3

3/3.3

8

IN-LINE, WINDOW

DIP32,.6

EPROMs

2.54 mm

85 Cel

3-STATE

256KX8

256K

-40 Cel

MATTE TIN

DUAL

R-CDIP-T32

3.6 V

5.97 mm

15.24 mm

Not Qualified

2097152 bit

2.7 V

e3

.000015 Amp

41.885 mm

100 ns

M27V401-200F1TR

STMicroelectronics

UVPROM

COMMERCIAL

32

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

524288 words

3.3

8

IN-LINE

2.54 mm

70 Cel

512KX8

512K

0 Cel

DUAL

R-GDIP-T32

3.6 V

5.97 mm

15.24 mm

Not Qualified

4194304 bit

3 V

41.885 mm

200 ns

M87C257-80XF1

STMicroelectronics

UVPROM

COMMERCIAL

28

WDIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

32768 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP28,.6

EPROMs

2.54 mm

70 Cel

3-STATE

32KX8

32K

0 Cel

MATTE TIN

DUAL

R-CDIP-T28

5.25 V

5.72 mm

15.24 mm

Not Qualified

262144 bit

4.75 V

e3

.0001 Amp

36.92 mm

80 ns

WS57C49C-70CMB

STMicroelectronics

UVPROM

MILITARY

28

WQCCN

SQUARE

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

MIL-STD-883 Class B

NO LEAD

PARALLEL

ASYNCHRONOUS

83 mA

8192 words

COMMON

5

5

8

CHIP CARRIER, WINDOW

LCC28,.45SQ

EPROMs

1.27 mm

125 Cel

3-STATE

8KX8

8K

-55 Cel

TIN LEAD

QUAD

S-CQCC-N28

3.3 mm

11.455 mm

Not Qualified

65536 bit

e0

.035 Amp

11.455 mm

70 ns

WS57C49C-25D

STMicroelectronics

UVPROM

COMMERCIAL

24

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

40 mA

8192 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP24,.6

EPROMs

2.54 mm

70 Cel

3-STATE

8KX8

8K

0 Cel

TIN LEAD

DUAL

R-GDIP-T24

5.5 V

5.72 mm

15.24 mm

Not Qualified

65536 bit

4.5 V

e0

.035 Amp

32.135 mm

25 ns

M87C257-60F1

STMicroelectronics

UVPROM

COMMERCIAL

28

WDIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

32768 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP28,.6

EPROMs

2.54 mm

70 Cel

3-STATE

32KX8

32K

0 Cel

MATTE TIN

DUAL

R-CDIP-T28

5.5 V

5.72 mm

15.24 mm

Not Qualified

262144 bit

4.5 V

e3

.0001 Amp

36.92 mm

60 ns

5962-8765001LX

STMicroelectronics

UVPROM

MILITARY

24

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

2048 words

5

8

IN-LINE, WINDOW

2.54 mm

125 Cel

2KX8

2K

-55 Cel

TIN LEAD

DUAL

R-GDIP-T24

5.5 V

5.08 mm

7.62 mm

Not Qualified

16384 bit

4.5 V

e0

31.877 mm

50 ns

M27HC641-45FS1

STMicroelectronics

UVPROM

COMMERCIAL

24

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

60 mA

8192 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP24,.3

EPROMs

2.54 mm

70 Cel

3-STATE

8KX8

8K

0 Cel

TIN LEAD

DUAL

R-GDIP-T24

5.5 V

Not Qualified

65536 bit

4.5 V

e0

.02 Amp

45 ns

M27V402-150F5

STMicroelectronics

UVPROM

OTHER

40

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

20 mA

262144 words

COMMON

3.3

3.3

16

IN-LINE, WINDOW

DIP40,.6

EPROMs

2.54 mm

85 Cel

3-STATE

256KX16

256K

-20 Cel

TIN LEAD

DUAL

R-GDIP-T40

3.63 V

5.72 mm

15.24 mm

Not Qualified

4194304 bit

2.97 V

e0

.00002 Amp

52.195 mm

150 ns

M27V101-200L1

STMicroelectronics

UVPROM

COMMERCIAL

32

WQCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

30 mA

131072 words

COMMON

3.3

3.3/5

8

CHIP CARRIER, WINDOW

LCC32,.45X.55

EPROMs

1.27 mm

70 Cel

3-STATE

128KX8

128K

0 Cel

TIN LEAD

QUAD

R-CQCC-N32

3.63 V

2.28 mm

11.43 mm

Not Qualified

1048576 bit

2.97 V

e0

.00002 Amp

13.97 mm

200 ns

5962-8961403MYC

STMicroelectronics

UVPROM

MILITARY

32

WQCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

MIL-STD-883

NO LEAD

PARALLEL

ASYNCHRONOUS

131072 words

5

8

CHIP CARRIER, WINDOW

1.27 mm

125 Cel

128KX8

128K

-55 Cel

TIN LEAD

QUAD

R-CQCC-N32

5.5 V

2.92 mm

11.4 mm

Not Qualified

1048576 bit

4.5 V

e0

13.95 mm

200 ns

M27V322-100XF1

STMicroelectronics

UVPROM

COMMERCIAL

42

WDIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

2097152 words

COMMON

3.3

3.3

16

IN-LINE, WINDOW

DIP42,.6

EPROMs

2.54 mm

70 Cel

3-STATE

2MX16

2M

0 Cel

MATTE TIN

DUAL

R-CDIP-T42

3.465 V

5.72 mm

15.24 mm

Not Qualified

33554432 bit

3.135 V

e3

.00006 Amp

54.635 mm

100 ns

M2764A-20F1

STMicroelectronics

UVPROM

COMMERCIAL

28

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

NMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

75 mA

8192 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP28,.6

EPROMs

2.54 mm

70 Cel

3-STATE

8KX8

8K

0 Cel

TIN LEAD

DUAL

R-GDIP-T28

5.5 V

5.71 mm

15.24 mm

Not Qualified

65536 bit

4.5 V

e0

200 ns

12.5

M27V160-100XF6

STMicroelectronics

UVPROM

INDUSTRIAL

42

WDIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

1048576 words

COMMON

3.3

3.3

16

IN-LINE, WINDOW

DIP42,.6

8

EPROMs

2.54 mm

85 Cel

3-STATE

1MX16

1M

-40 Cel

MATTE TIN

DUAL

R-CDIP-T42

3.465 V

5.71 mm

15.24 mm

Not Qualified

16777216 bit

3.135 V

e3

.00006 Amp

54.635 mm

100 ns

TTV27C256N-12C-19

STMicroelectronics

UVPROM

AUTOMOTIVE

28

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

50 mA

32768 words

COMMON

5

8

IN-LINE, WINDOW

DIP28,.6

2.54 mm

125 Cel

3-STATE

32KX8

32K

-40 Cel

DUAL

R-GDIP-T28

5.5 V

5.72 mm

15.24 mm

262144 bit

4.5 V

.0001 Amp

36.92 mm

120 ns

12.75

5962-8606309UA

STMicroelectronics

UVPROM

MILITARY

28

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

MIL-STD-883

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

115 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.3

EPROMs

2.54 mm

125 Cel

3-STATE

32KX8

32K

-55 Cel

TIN LEAD

DUAL

R-GDIP-T28

5.5 V

Not Qualified

262144 bit

4.5 V

e0

.045 Amp

55 ns

12.5

5962-8765002JX

STMicroelectronics

UVPROM

MILITARY

24

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

2048 words

5

8

IN-LINE, WINDOW

2.54 mm

125 Cel

2KX8

2K

-55 Cel

DUAL

R-GDIP-T24

5.5 V

5.72 mm

15.24 mm

Not Qualified

16384 bit

4.5 V

32.135 mm

55 ns

WS57291C-55TMB

STMicroelectronics

UVPROM

MILITARY

24

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

MIL-STD-883 Class B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

2048 words

8

IN-LINE, WINDOW

2.54 mm

125 Cel

2KX8

2K

-55 Cel

DUAL

R-GDIP-T24

5.08 mm

7.62 mm

Not Qualified

16384 bit

32.005 mm

55 ns

M27V402-120F4TR

STMicroelectronics

UVPROM

COMMERCIAL

40

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

262144 words

3.3

16

IN-LINE, WINDOW

2.54 mm

70 Cel

256KX16

256K

-20 Cel

DUAL

R-GDIP-T40

3.63 V

5.72 mm

15.24 mm

Not Qualified

4194304 bit

2.97 V

120 ns

5962-9065801JX

STMicroelectronics

UVPROM

MILITARY

24

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

4096 words

5

8

IN-LINE

125 Cel

4KX8

4K

-55 Cel

TIN LEAD

DUAL

R-GDIP-T24

5.5 V

Not Qualified

32768 bit

4.5 V

e0

70 ns

M87C257-45F6

STMicroelectronics

UVPROM

INDUSTRIAL

28

WDIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

32768 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP28,.6

EPROMs

2.54 mm

85 Cel

3-STATE

32KX8

32K

-40 Cel

MATTE TIN

DUAL

R-CDIP-T28

5.5 V

5.72 mm

15.24 mm

Not Qualified

262144 bit

4.5 V

e3

.0001 Amp

36.92 mm

45 ns

M27V800-120F6

STMicroelectronics

INDUSTRIAL

42

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

30 mA

1048576 words

COMMON

3/3.3

8

IN-LINE

DIP42,.6

EPROMs

2.54 mm

85 Cel

3-STATE

1MX8

1M

-40 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T42

Not Qualified

8388608 bit

e0

.000015 Amp

120 ns

EPROM

EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.

EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.

EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.