Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Package Shape | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Output Characteristics | Organization | No. of Words Code | Minimum Operating Temperature | Terminal Finish | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Standby Current | Length | Maximum Access Time | Programming Voltage (V) |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics |
UVPROM |
COMMERCIAL |
28 |
WDIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
107 mA |
16384 words |
5 |
5 |
8 |
IN-LINE, WINDOW |
DIP28,.3 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
16KX8 |
16K |
0 Cel |
TIN LEAD |
DUAL |
R-GDIP-T28 |
5.5 V |
5.08 mm |
7.62 mm |
Not Qualified |
131072 bit |
4.5 V |
e0 |
.03 Amp |
37.085 mm |
70 ns |
|||||||||||
|
STMicroelectronics |
UVPROM |
COMMERCIAL |
42 |
WDIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
2097152 words |
COMMON |
3.3 |
3.3 |
8 |
IN-LINE, WINDOW |
DIP42,.6 |
16 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
2MX8 |
2M |
0 Cel |
MATTE TIN |
DUAL |
R-GDIP-T42 |
3.63 V |
5.71 mm |
15.24 mm |
Not Qualified |
16777216 bit |
2.97 V |
e3 |
.00002 Amp |
110 ns |
|||||||||
|
STMicroelectronics |
UVPROM |
INDUSTRIAL |
28 |
WDIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
15 mA |
65536 words |
COMMON |
3 |
3/3.3 |
8 |
IN-LINE, WINDOW |
DIP28,.6 |
EPROMs |
2.54 mm |
85 Cel |
3-STATE |
64KX8 |
64K |
-40 Cel |
TIN |
DUAL |
R-GDIP-T28 |
3.6 V |
5.97 mm |
15.24 mm |
Not Qualified |
524288 bit |
2.7 V |
e3 |
.000015 Amp |
36.92 mm |
100 ns |
|||||||||
STMicroelectronics |
UVPROM |
MILITARY |
28 |
WQCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
MIL-STD-883 Class B |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
50 mA |
8192 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER, WINDOW |
LCC28,.45SQ |
EPROMs |
1.27 mm |
125 Cel |
3-STATE |
8KX8 |
8K |
-55 Cel |
TIN LEAD |
QUAD |
S-CQCC-N28 |
3.3 mm |
11.455 mm |
Not Qualified |
65536 bit |
e0 |
.035 Amp |
11.455 mm |
35 ns |
|||||||||||
STMicroelectronics |
UVPROM |
MILITARY |
24 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
38535Q/M;38534H;883B |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
50 mA |
4096 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP24,.6 |
EPROMs |
2.54 mm |
125 Cel |
3-STATE |
4KX8 |
4K |
-55 Cel |
TIN LEAD |
DUAL |
R-GDIP-T24 |
5.5 V |
Not Qualified |
32768 bit |
4.5 V |
e0 |
.035 Amp |
55 ns |
||||||||||||
STMicroelectronics |
UVPROM |
COMMERCIAL |
28 |
WDIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
NMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
75 mA |
8192 words |
COMMON |
5 |
5 |
8 |
IN-LINE, WINDOW |
DIP28,.6 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
8KX8 |
8K |
0 Cel |
TIN LEAD |
DUAL |
R-GDIP-T28 |
5.25 V |
5.71 mm |
15.24 mm |
Not Qualified |
65536 bit |
4.75 V |
e0 |
250 ns |
12.5 |
|||||||||||
STMicroelectronics |
UVPROM |
COMMERCIAL |
40 |
WDIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
20 mA |
262144 words |
COMMON |
3.3 |
3.3 |
16 |
IN-LINE, WINDOW |
DIP40,.6 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
256KX16 |
256K |
0 Cel |
TIN LEAD |
DUAL |
R-GDIP-T40 |
3.63 V |
5.72 mm |
15.24 mm |
Not Qualified |
4194304 bit |
2.97 V |
e0 |
.00002 Amp |
52.195 mm |
150 ns |
||||||||||
|
STMicroelectronics |
UVPROM |
INDUSTRIAL |
40 |
WDIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
262144 words |
3 |
16 |
IN-LINE, WINDOW |
2.54 mm |
85 Cel |
256KX16 |
256K |
-40 Cel |
MATTE TIN |
DUAL |
R-GDIP-T40 |
3.6 V |
5.97 mm |
15.24 mm |
Not Qualified |
4194304 bit |
2.7 V |
THIS SPEED ALSO GUARANTEES 80NS ACCESS TIME AT VCC = 3.0V TO 3.6V |
e3 |
52.195 mm |
100 ns |
|||||||||||||||
|
STMicroelectronics |
UVPROM |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
32768 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
EPROMs |
2.54 mm |
105 Cel |
3-STATE |
32KX8 |
32K |
-40 Cel |
MATTE TIN |
DUAL |
R-XDIP-T28 |
15.24 mm |
Not Qualified |
262144 bit |
LG-MAX |
e3 |
.0001 Amp |
38.1 mm |
45 ns |
|||||||||||
|
STMicroelectronics |
UVPROM |
INDUSTRIAL |
32 |
WDIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
15 mA |
262144 words |
COMMON |
3 |
3/3.3 |
8 |
IN-LINE, WINDOW |
DIP32,.6 |
EPROMs |
2.54 mm |
85 Cel |
3-STATE |
256KX8 |
256K |
-40 Cel |
MATTE TIN |
DUAL |
R-CDIP-T32 |
3.6 V |
5.97 mm |
15.24 mm |
Not Qualified |
2097152 bit |
2.7 V |
e3 |
.000015 Amp |
41.885 mm |
100 ns |
|||||||||
|
STMicroelectronics |
UVPROM |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
32768 words |
COMMON |
5 |
8 |
IN-LINE, WINDOW |
DIP28,.6 |
2.54 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
0 Cel |
DUAL |
R-CDIP-T28 |
5.5 V |
5.72 mm |
15.26 mm |
262144 bit |
4.5 V |
.0001 Amp |
36.92 mm |
150 ns |
12.75 |
|||||||||||||
|
STMicroelectronics |
UVPROM |
AUTOMOTIVE |
28 |
WDIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
32768 words |
COMMON |
5 |
5 |
8 |
IN-LINE, WINDOW |
DIP28,.6 |
EPROMs |
2.54 mm |
125 Cel |
3-STATE |
32KX8 |
32K |
-40 Cel |
MATTE TIN |
DUAL |
R-CDIP-T28 |
5.25 V |
5.72 mm |
15.24 mm |
Not Qualified |
262144 bit |
4.75 V |
e3 |
.0001 Amp |
36.92 mm |
80 ns |
|||||||||
|
STMicroelectronics |
UVPROM |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
30 mA |
32768 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
EPROMs |
2.54 mm |
105 Cel |
3-STATE |
32KX8 |
32K |
-40 Cel |
MATTE TIN |
DUAL |
R-XDIP-T28 |
Not Qualified |
262144 bit |
e3 |
.0001 Amp |
200 ns |
|||||||||||||||||
STMicroelectronics |
UVPROM |
MILITARY |
28 |
WQCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
38535Q/M;38534H;883B |
NO LEAD |
PARALLEL |
SYNCHRONOUS |
120 mA |
2048 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER, WINDOW |
LCC28,.45SQ |
EPROMs |
1.27 mm |
125 Cel |
REGISTERED |
2KX8 |
2K |
-55 Cel |
Gold (Au) |
QUAD |
S-CQCC-N28 |
5.5 V |
2.8956 mm |
11.43 mm |
Not Qualified |
16384 bit |
4.5 V |
e4 |
.12 Amp |
11.43 mm |
35 ns |
13.5 |
||||||||
STMicroelectronics |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
98 mA |
8192 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
8KX8 |
8K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T28 |
Not Qualified |
65536 bit |
e0 |
.0005 Amp |
55 ns |
13.5 |
||||||||||||||||||
STMicroelectronics |
UVPROM |
MILITARY |
28 |
WQCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
38535Q/M;38534H;883B |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
120 mA |
2048 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER, WINDOW |
LCC28,.45SQ |
EPROMs |
1.27 mm |
125 Cel |
3-STATE |
2KX8 |
2K |
-55 Cel |
Gold (Au) |
QUAD |
S-CQCC-N28 |
5.5 V |
3.3 mm |
11.455 mm |
Not Qualified |
16384 bit |
4.5 V |
e4 |
.12 Amp |
11.455 mm |
45 ns |
13.5 |
||||||||
STMicroelectronics |
UVPROM |
MILITARY |
28 |
WQCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
38535Q/M;38534H;883B |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
120 mA |
2048 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER, WINDOW |
LCC28,.45SQ |
EPROMs |
1.27 mm |
125 Cel |
3-STATE |
2KX8 |
2K |
-55 Cel |
Gold (Au) |
QUAD |
S-CQCC-N28 |
5.5 V |
2.8956 mm |
11.43 mm |
Not Qualified |
16384 bit |
4.5 V |
e4 |
.12 Amp |
11.43 mm |
50 ns |
13.5 |
||||||||
|
STMicroelectronics |
UVPROM |
INDUSTRIAL |
28 |
WDIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
32768 words |
COMMON |
5 |
5 |
8 |
IN-LINE, WINDOW |
DIP28,.6 |
EPROMs |
2.54 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
-40 Cel |
MATTE TIN |
DUAL |
R-CDIP-T28 |
5.25 V |
5.72 mm |
15.24 mm |
Not Qualified |
262144 bit |
4.75 V |
e3 |
.0001 Amp |
36.92 mm |
60 ns |
|||||||||
STMicroelectronics |
UVPROM |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
32768 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
EPROMs |
2.54 mm |
105 Cel |
3-STATE |
32KX8 |
32K |
-40 Cel |
DUAL |
R-XDIP-T28 |
Not Qualified |
262144 bit |
.0001 Amp |
120 ns |
12.75 |
||||||||||||||||
STMicroelectronics |
UVPROM |
MILITARY |
28 |
QCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
38535Q/M;38534H;883B |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
50 mA |
4096 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LCC28,.45SQ |
EPROMs |
1.27 mm |
125 Cel |
3-STATE |
4KX8 |
4K |
-55 Cel |
Gold (Au) |
QUAD |
S-CQCC-N28 |
5.5 V |
Not Qualified |
32768 bit |
4.5 V |
e4 |
.035 Amp |
55 ns |
||||||||||||
|
STMicroelectronics |
UVPROM |
INDUSTRIAL |
28 |
WDIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
32768 words |
COMMON |
5 |
5 |
8 |
IN-LINE, WINDOW |
DIP28,.6 |
EPROMs |
2.54 mm |
105 Cel |
3-STATE |
32KX8 |
32K |
-40 Cel |
MATTE TIN |
DUAL |
R-GDIP-T28 |
5.5 V |
5.71 mm |
15.24 mm |
Not Qualified |
262144 bit |
4.5 V |
e3 |
.0001 Amp |
120 ns |
||||||||||
STMicroelectronics |
UVPROM |
COMMERCIAL |
42 |
WDIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
524288 words |
COMMON |
3.3 |
3.3 |
16 |
IN-LINE, WINDOW |
DIP42,.6 |
8 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
512KX16 |
512K |
0 Cel |
TIN LEAD |
DUAL |
R-GDIP-T42 |
3.63 V |
5.72 mm |
15.24 mm |
Not Qualified |
8388608 bit |
2.97 V |
e0 |
.00002 Amp |
54.635 mm |
150 ns |
|||||||||
STMicroelectronics |
UVPROM |
COMMERCIAL |
28 |
WDIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
164 mA |
16384 words |
5 |
5 |
8 |
IN-LINE, WINDOW |
DIP28,.3 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
16KX8 |
16K |
0 Cel |
TIN LEAD |
DUAL |
R-GDIP-T28 |
5.5 V |
5.08 mm |
7.62 mm |
Not Qualified |
131072 bit |
4.5 V |
e0 |
.03 Amp |
37.085 mm |
35 ns |
|||||||||||
STMicroelectronics |
UVPROM |
MILITARY |
24 |
WDIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
8192 words |
5 |
8 |
IN-LINE, WINDOW |
2.54 mm |
125 Cel |
8KX8 |
8K |
-55 Cel |
DUAL |
R-GDIP-T24 |
5.5 V |
5.08 mm |
7.62 mm |
Not Qualified |
65536 bit |
4.5 V |
32.005 mm |
55 ns |
|||||||||||||||||||
STMicroelectronics |
UVPROM |
COMMERCIAL |
32 |
WQCCN |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
30 mA |
524288 words |
COMMON |
5 |
3.3/5 |
8 |
CHIP CARRIER, WINDOW |
LCC32,.45X.55 |
EPROMs |
1.27 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
0 Cel |
TIN LEAD |
QUAD |
R-CQCC-N32 |
5.5 V |
2.28 mm |
11.43 mm |
Not Qualified |
4194304 bit |
3 V |
e0 |
.00002 Amp |
13.97 mm |
200 ns |
||||||||||
|
STMicroelectronics |
UVPROM |
INDUSTRIAL |
28 |
WDIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
32768 words |
COMMON |
5 |
5 |
8 |
IN-LINE, WINDOW |
DIP28,.6 |
EPROMs |
2.54 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
-40 Cel |
MATTE TIN |
DUAL |
R-CDIP-T28 |
5.25 V |
5.72 mm |
15.24 mm |
Not Qualified |
262144 bit |
4.75 V |
e3 |
.0001 Amp |
36.92 mm |
150 ns |
|||||||||
|
STMicroelectronics |
UVPROM |
INDUSTRIAL |
32 |
WDIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
15 mA |
262144 words |
COMMON |
3 |
3/3.3 |
8 |
IN-LINE, WINDOW |
DIP32,.6 |
EPROMs |
2.54 mm |
85 Cel |
3-STATE |
256KX8 |
256K |
-40 Cel |
MATTE TIN |
DUAL |
R-CDIP-T32 |
3.6 V |
5.97 mm |
15.24 mm |
Not Qualified |
2097152 bit |
2.7 V |
e3 |
.000015 Amp |
41.885 mm |
100 ns |
|||||||||
STMicroelectronics |
UVPROM |
COMMERCIAL |
32 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
524288 words |
3.3 |
8 |
IN-LINE |
2.54 mm |
70 Cel |
512KX8 |
512K |
0 Cel |
DUAL |
R-GDIP-T32 |
3.6 V |
5.97 mm |
15.24 mm |
Not Qualified |
4194304 bit |
3 V |
41.885 mm |
200 ns |
|||||||||||||||||||
|
STMicroelectronics |
UVPROM |
COMMERCIAL |
28 |
WDIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
32768 words |
COMMON |
5 |
5 |
8 |
IN-LINE, WINDOW |
DIP28,.6 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
0 Cel |
MATTE TIN |
DUAL |
R-CDIP-T28 |
5.25 V |
5.72 mm |
15.24 mm |
Not Qualified |
262144 bit |
4.75 V |
e3 |
.0001 Amp |
36.92 mm |
80 ns |
|||||||||
STMicroelectronics |
UVPROM |
MILITARY |
28 |
WQCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
MIL-STD-883 Class B |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
83 mA |
8192 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER, WINDOW |
LCC28,.45SQ |
EPROMs |
1.27 mm |
125 Cel |
3-STATE |
8KX8 |
8K |
-55 Cel |
TIN LEAD |
QUAD |
S-CQCC-N28 |
3.3 mm |
11.455 mm |
Not Qualified |
65536 bit |
e0 |
.035 Amp |
11.455 mm |
70 ns |
|||||||||||
STMicroelectronics |
UVPROM |
COMMERCIAL |
24 |
WDIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
40 mA |
8192 words |
COMMON |
5 |
5 |
8 |
IN-LINE, WINDOW |
DIP24,.6 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
8KX8 |
8K |
0 Cel |
TIN LEAD |
DUAL |
R-GDIP-T24 |
5.5 V |
5.72 mm |
15.24 mm |
Not Qualified |
65536 bit |
4.5 V |
e0 |
.035 Amp |
32.135 mm |
25 ns |
||||||||||
|
STMicroelectronics |
UVPROM |
COMMERCIAL |
28 |
WDIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
32768 words |
COMMON |
5 |
5 |
8 |
IN-LINE, WINDOW |
DIP28,.6 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
0 Cel |
MATTE TIN |
DUAL |
R-CDIP-T28 |
5.5 V |
5.72 mm |
15.24 mm |
Not Qualified |
262144 bit |
4.5 V |
e3 |
.0001 Amp |
36.92 mm |
60 ns |
|||||||||
STMicroelectronics |
UVPROM |
MILITARY |
24 |
WDIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
2048 words |
5 |
8 |
IN-LINE, WINDOW |
2.54 mm |
125 Cel |
2KX8 |
2K |
-55 Cel |
TIN LEAD |
DUAL |
R-GDIP-T24 |
5.5 V |
5.08 mm |
7.62 mm |
Not Qualified |
16384 bit |
4.5 V |
e0 |
31.877 mm |
50 ns |
|||||||||||||||||
STMicroelectronics |
UVPROM |
COMMERCIAL |
24 |
WDIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
60 mA |
8192 words |
COMMON |
5 |
5 |
8 |
IN-LINE, WINDOW |
DIP24,.3 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
8KX8 |
8K |
0 Cel |
TIN LEAD |
DUAL |
R-GDIP-T24 |
5.5 V |
Not Qualified |
65536 bit |
4.5 V |
e0 |
.02 Amp |
45 ns |
|||||||||||||
STMicroelectronics |
UVPROM |
OTHER |
40 |
WDIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
20 mA |
262144 words |
COMMON |
3.3 |
3.3 |
16 |
IN-LINE, WINDOW |
DIP40,.6 |
EPROMs |
2.54 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
-20 Cel |
TIN LEAD |
DUAL |
R-GDIP-T40 |
3.63 V |
5.72 mm |
15.24 mm |
Not Qualified |
4194304 bit |
2.97 V |
e0 |
.00002 Amp |
52.195 mm |
150 ns |
||||||||||
STMicroelectronics |
UVPROM |
COMMERCIAL |
32 |
WQCCN |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
30 mA |
131072 words |
COMMON |
3.3 |
3.3/5 |
8 |
CHIP CARRIER, WINDOW |
LCC32,.45X.55 |
EPROMs |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
0 Cel |
TIN LEAD |
QUAD |
R-CQCC-N32 |
3.63 V |
2.28 mm |
11.43 mm |
Not Qualified |
1048576 bit |
2.97 V |
e0 |
.00002 Amp |
13.97 mm |
200 ns |
||||||||||
STMicroelectronics |
UVPROM |
MILITARY |
32 |
WQCCN |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
MIL-STD-883 |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
CHIP CARRIER, WINDOW |
1.27 mm |
125 Cel |
128KX8 |
128K |
-55 Cel |
TIN LEAD |
QUAD |
R-CQCC-N32 |
5.5 V |
2.92 mm |
11.4 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
13.95 mm |
200 ns |
||||||||||||||||
|
STMicroelectronics |
UVPROM |
COMMERCIAL |
42 |
WDIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
2097152 words |
COMMON |
3.3 |
3.3 |
16 |
IN-LINE, WINDOW |
DIP42,.6 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
2MX16 |
2M |
0 Cel |
MATTE TIN |
DUAL |
R-CDIP-T42 |
3.465 V |
5.72 mm |
15.24 mm |
Not Qualified |
33554432 bit |
3.135 V |
e3 |
.00006 Amp |
54.635 mm |
100 ns |
|||||||||
STMicroelectronics |
UVPROM |
COMMERCIAL |
28 |
WDIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
NMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
75 mA |
8192 words |
COMMON |
5 |
5 |
8 |
IN-LINE, WINDOW |
DIP28,.6 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
8KX8 |
8K |
0 Cel |
TIN LEAD |
DUAL |
R-GDIP-T28 |
5.5 V |
5.71 mm |
15.24 mm |
Not Qualified |
65536 bit |
4.5 V |
e0 |
200 ns |
12.5 |
|||||||||||
|
STMicroelectronics |
UVPROM |
INDUSTRIAL |
42 |
WDIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
1048576 words |
COMMON |
3.3 |
3.3 |
16 |
IN-LINE, WINDOW |
DIP42,.6 |
8 |
EPROMs |
2.54 mm |
85 Cel |
3-STATE |
1MX16 |
1M |
-40 Cel |
MATTE TIN |
DUAL |
R-CDIP-T42 |
3.465 V |
5.71 mm |
15.24 mm |
Not Qualified |
16777216 bit |
3.135 V |
e3 |
.00006 Amp |
54.635 mm |
100 ns |
||||||||
|
STMicroelectronics |
UVPROM |
AUTOMOTIVE |
28 |
WDIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
50 mA |
32768 words |
COMMON |
5 |
8 |
IN-LINE, WINDOW |
DIP28,.6 |
2.54 mm |
125 Cel |
3-STATE |
32KX8 |
32K |
-40 Cel |
DUAL |
R-GDIP-T28 |
5.5 V |
5.72 mm |
15.24 mm |
262144 bit |
4.5 V |
.0001 Amp |
36.92 mm |
120 ns |
12.75 |
|||||||||||||
STMicroelectronics |
UVPROM |
MILITARY |
28 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
MIL-STD-883 |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
115 mA |
32768 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.3 |
EPROMs |
2.54 mm |
125 Cel |
3-STATE |
32KX8 |
32K |
-55 Cel |
TIN LEAD |
DUAL |
R-GDIP-T28 |
5.5 V |
Not Qualified |
262144 bit |
4.5 V |
e0 |
.045 Amp |
55 ns |
12.5 |
|||||||||||
STMicroelectronics |
UVPROM |
MILITARY |
24 |
WDIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
2048 words |
5 |
8 |
IN-LINE, WINDOW |
2.54 mm |
125 Cel |
2KX8 |
2K |
-55 Cel |
DUAL |
R-GDIP-T24 |
5.5 V |
5.72 mm |
15.24 mm |
Not Qualified |
16384 bit |
4.5 V |
32.135 mm |
55 ns |
|||||||||||||||||||
STMicroelectronics |
UVPROM |
MILITARY |
24 |
WDIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
MIL-STD-883 Class B |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
2048 words |
8 |
IN-LINE, WINDOW |
2.54 mm |
125 Cel |
2KX8 |
2K |
-55 Cel |
DUAL |
R-GDIP-T24 |
5.08 mm |
7.62 mm |
Not Qualified |
16384 bit |
32.005 mm |
55 ns |
|||||||||||||||||||||
STMicroelectronics |
UVPROM |
COMMERCIAL |
40 |
WDIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
262144 words |
3.3 |
16 |
IN-LINE, WINDOW |
2.54 mm |
70 Cel |
256KX16 |
256K |
-20 Cel |
DUAL |
R-GDIP-T40 |
3.63 V |
5.72 mm |
15.24 mm |
Not Qualified |
4194304 bit |
2.97 V |
120 ns |
||||||||||||||||||||
STMicroelectronics |
UVPROM |
MILITARY |
24 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
4096 words |
5 |
8 |
IN-LINE |
125 Cel |
4KX8 |
4K |
-55 Cel |
TIN LEAD |
DUAL |
R-GDIP-T24 |
5.5 V |
Not Qualified |
32768 bit |
4.5 V |
e0 |
70 ns |
|||||||||||||||||||||
|
STMicroelectronics |
UVPROM |
INDUSTRIAL |
28 |
WDIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
32768 words |
COMMON |
5 |
5 |
8 |
IN-LINE, WINDOW |
DIP28,.6 |
EPROMs |
2.54 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
-40 Cel |
MATTE TIN |
DUAL |
R-CDIP-T28 |
5.5 V |
5.72 mm |
15.24 mm |
Not Qualified |
262144 bit |
4.5 V |
e3 |
.0001 Amp |
36.92 mm |
45 ns |
|||||||||
STMicroelectronics |
INDUSTRIAL |
42 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
30 mA |
1048576 words |
COMMON |
3/3.3 |
8 |
IN-LINE |
DIP42,.6 |
EPROMs |
2.54 mm |
85 Cel |
3-STATE |
1MX8 |
1M |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T42 |
Not Qualified |
8388608 bit |
e0 |
.000015 Amp |
120 ns |
EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.
EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.
EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.