OTHER FIFO FIFO 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	Cycle Time	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
72V3680L10PFG	Renesas Electronics	OTHER FIFO	COMMERCIAL	128	LFQFP	RECTANGULAR	PLASTIC/EPOXY	YES	10 ns	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	40 mA	16384 words	3.3	3.3	36	FLATPACK, LOW PROFILE, FINE PITCH	QFP128,.63X.87,20		FIFOs	.5 mm	70 Cel		16KX36	16K	0 Cel	Matte Tin (Sn) - annealed	QUAD	R-PQFP-G128	3	3.45 V	1.6 mm	100 MHz	14 mm	Not Qualified	589824 bit	3.15 V	RETRANSMIT; AUTO POWER DOWN; ASYNCHRONOUS MODE IS ALSO POSSIBLE	e3	30	260	YES	.015 Amp	20 mm	6.5 ns
72V215L20TFG8	Renesas Electronics	OTHER FIFO	COMMERCIAL	64	LFQFP	SQUARE	PLASTIC/EPOXY	YES	20 ns	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		512 words	3.3		18	FLATPACK, LOW PROFILE, FINE PITCH				.5 mm	70 Cel		512X18	512	0 Cel		QUAD	S-PQFP-G64		3.6 V	1.6 mm		10 mm		9216 bit	3 V	EASILY EXPANDABLE IN DEPTH AND WIDTH		30	260	YES		10 mm	12 ns
IDT7201LA30PB	Renesas Electronics	OTHER FIFO	MILITARY	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	40 ns	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	512 words	5	5	9	IN-LINE	DIP28,.6		FIFOs	2.54 mm	125 Cel		512X9	512	-55 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDIP-T28	1	5.5 V	4.699 mm	33.3 MHz	15.24 mm	Not Qualified	4608 bit	4.5 V	RETRANSMIT	e0	20	240	NO	.015 Amp	36.576 mm	30 ns
72V2105L20PFG8	Renesas Electronics	OTHER FIFO	COMMERCIAL	64	LQFP	SQUARE	PLASTIC/EPOXY	YES	20 ns	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		262144 words	3.3		18	FLATPACK, LOW PROFILE				.8 mm	70 Cel		256KX18	256K	0 Cel		QUAD	S-PQFP-G64		3.6 V	1.6 mm		14 mm		4718592 bit	3 V	EASILY EXPANDABLE IN DEPTH AND WIDTH		NOT SPECIFIED	NOT SPECIFIED	YES		14 mm	12 ns
IDT7200L30TDGB	Renesas Electronics	OTHER FIFO	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	40 ns	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	256 words	5	5	9	IN-LINE	DIP28,.3		FIFOs	2.54 mm	125 Cel		256X9	256	-55 Cel	MATTE TIN	DUAL	R-GDIP-T28		5.5 V	5.08 mm	25 MHz	7.62 mm	Not Qualified	2304 bit	4.5 V	RETRANSMIT	e3			NO	.015 Amp	37.1475 mm	30 ns
IDT72241L15JG	Renesas Electronics	OTHER FIFO	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	15 ns	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS	35 mA	4096 words	5	5	9	CHIP CARRIER	LDCC32,.5X.6		FIFOs	1.27 mm	70 Cel	3-STATE	4KX9	4K	0 Cel	Matte Tin (Sn) - annealed	QUAD	R-PQCC-J32	3	5.5 V	3.5 mm	66.7 MHz	11.43 mm	Not Qualified	36864 bit	4.5 V		e3	30	260	YES	.005 Amp	13.97 mm	10 ns
72V36100L6BB	Renesas Electronics	OTHER FIFO	COMMERCIAL	144	BGA	SQUARE	PLASTIC/EPOXY	YES	6 ns	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	40 mA	65536 words	3.3	3.3	36	GRID ARRAY	BGA144,12X12,40		FIFOs	1 mm	70 Cel		64KX36	64K	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B144	3	3.45 V	1.97 mm	166 MHz	13 mm	Not Qualified	2359296 bit	3.15 V	RETRANSMIT; AUTO POWER DOWN; ASYNCHRONOUS MODE IS ALSO POSSIBLE	e0	30	225	YES	.015 Amp	13 mm	4 ns
IDT72841L10PFG	Renesas Electronics	OTHER FIFO	COMMERCIAL	64	LQFP	SQUARE	PLASTIC/EPOXY	YES	10 ns	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	60 mA	4096 words	5	5	9	FLATPACK, LOW PROFILE	QFP64,.66SQ,32		FIFOs	.8 mm	70 Cel		4KX9	4K	0 Cel	Matte Tin (Sn) - annealed	QUAD	S-PQFP-G64	3	5.5 V	1.6 mm	100 MHz	14 mm	Not Qualified	36864 bit	4.5 V		e3	30	260	YES	.01 Amp	14 mm	6.5 ns
7204L20JB	Renesas Electronics	OTHER FIFO	MILITARY	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	30 ns	1	CMOS	MIL-STD-883 Class B	J BEND	PARALLEL	ASYNCHRONOUS	150 mA	4096 words	5	5	9	CHIP CARRIER	LDCC32,.5X.6		FIFOs	1.27 mm	125 Cel		4KX9	4K	-55 Cel	TIN LEAD	QUAD	R-PQCC-J32	1	5.5 V	3.556 mm	33.3 MHz	11.4554 mm	Not Qualified	36864 bit	4.5 V	RETRANSMIT	e0	20	225	NO	.025 Amp	13.9954 mm	20 ns
IDT7203L30PB	Renesas Electronics	OTHER FIFO	MILITARY	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	40 ns	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	2048 words	5	5	9	IN-LINE	DIP28,.6		FIFOs	2.54 mm	125 Cel		2KX9	2K	-55 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDIP-T28	1	5.5 V	4.699 mm	25 MHz	15.24 mm	Not Qualified	18432 bit	4.5 V	RETRANSMIT	e0	20	240	NO	.025 Amp	36.576 mm	30 ns
7202LA30LGB	Renesas Electronics	OTHER FIFO	MILITARY	32	QCCN	RECTANGULAR	PLASTIC/EPOXY	YES	40 ns		CMOS	MIL-STD-883 Class B (Modified)	NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	1024 words	5	5	9	CHIP CARRIER	LCC32,.45X.55		FIFOs	1.27 mm	125 Cel		1KX9	1K	-55 Cel	MATTE TIN	QUAD	R-PQCC-N32						Not Qualified	9216 bit			e3			NO	.015 Amp		30 ns
7201LA20JG	Renesas Electronics	OTHER FIFO	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	30 ns	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	80 mA	512 words	5	5	9	CHIP CARRIER	LDCC32,.5X.6		FIFOs	1.27 mm	70 Cel		512X9	512	0 Cel	Matte Tin (Sn) - annealed	QUAD	R-PQCC-J32	3	5.5 V	3.55 mm	33.3 MHz	11.43 mm	Not Qualified	4608 bit	4.5 V	RETRANSMIT	e3	30	260	NO	.005 Amp	13.97 mm	20 ns
IDT7200L30TDB	Renesas Electronics	OTHER FIFO	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	40 ns	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	256 words	5	5	9	IN-LINE	DIP28,.3		FIFOs	2.54 mm	125 Cel	3-STATE	256X9	256	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.08 mm	25 MHz	7.62 mm	Not Qualified	2304 bit	4.5 V	RETRANSMIT	e0			NO	.0009 Amp	37.1475 mm	30 ns
IDT72V03L25JGI	Renesas Electronics	OTHER FIFO	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	35 ns	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	60 mA	2048 words	3.3	3.3	9	CHIP CARRIER	LDCC32,.5X.6		FIFOs	1.27 mm	85 Cel	3-STATE	2KX9	2K	-40 Cel	Matte Tin (Sn) - annealed	QUAD	R-PQCC-J32	3	3.6 V	3.55 mm	28.5 MHz	11.43 mm	Not Qualified	18432 bit	3 V	RETRANSMIT	e3	30	260	NO	.005 Amp	13.97 mm	25 ns
72V815L20PFG	Renesas Electronics	OTHER FIFO	COMMERCIAL	128	LFQFP	RECTANGULAR	PLASTIC/EPOXY	YES	20 ns	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	60 mA	512 words	3.3	3.3	18	FLATPACK, LOW PROFILE, FINE PITCH	QFP128,.63X.87,20		FIFOs	.5 mm	70 Cel		512X18	512	0 Cel	Matte Tin (Sn) - annealed	QUAD	R-PQFP-G128	3	3.6 V	1.6 mm	50 MHz	14 mm	Not Qualified	9216 bit	3 V		e3	30	260	YES	.01 Amp	20 mm	12 ns
72V2113L6BC	Renesas Electronics	OTHER FIFO	COMMERCIAL	100	LBGA	SQUARE	PLASTIC/EPOXY	YES	6 ns	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	35 mA	262144 words	3.3	3.3	18	GRID ARRAY, LOW PROFILE	BGA100,10X10,40	9	FIFOs	1 mm	70 Cel		256KX18	256K	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B100	3	3.45 V	1.5 mm	166 MHz	11 mm	Not Qualified	4718592 bit	3.15 V	ALTERNATIVE MEMORY WIDTH 9; ASYNCHRONOUS MODE ALSO POSSIBLE	e0	30	225	YES	.015 Amp	11 mm	4 ns
72V281L15PFGI8	Renesas Electronics	OTHER FIFO	INDUSTRIAL	64	LQFP	SQUARE	PLASTIC/EPOXY	YES	15 ns	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	55 mA	65536 words	3.3	3.3	9	FLATPACK, LOW PROFILE	QFP64,.63SQ,32		FIFOs	.8 mm	85 Cel		64KX9	64K	-40 Cel	MATTE TIN	QUAD	S-PQFP-G64	3	3.6 V	1.6 mm	66.7 MHz	14 mm	Not Qualified	589824 bit	3 V		e3		260	YES	.02 Amp	14 mm	10 ns
IDT72V815L15PFGI	Renesas Electronics	OTHER FIFO	INDUSTRIAL	128	LFQFP	RECTANGULAR	PLASTIC/EPOXY	YES	15 ns	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	60 mA	512 words	3.3	3.3	18	FLATPACK, LOW PROFILE, FINE PITCH	QFP128,.63X.87,20		FIFOs	.5 mm	85 Cel		512X18	512	-40 Cel	Matte Tin (Sn) - annealed	QUAD	R-PQFP-G128	3	3.6 V	1.6 mm	66.7 MHz	14 mm	Not Qualified	9216 bit	3 V		e3	30	260	YES	.01 Amp	20 mm	10 ns
7202LA20LG8	Renesas Electronics	OTHER FIFO	COMMERCIAL	32	QCCN	RECTANGULAR	PLASTIC/EPOXY	YES	30 ns		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	80 mA	1024 words	5	5	9	CHIP CARRIER	LCC32,.45X.55		FIFOs	1.27 mm	70 Cel		1KX9	1K	0 Cel	MATTE TIN	QUAD	R-PQCC-N32				33.3 MHz		Not Qualified	9216 bit			e3			NO	.005 Amp		20 ns
IDT72V243L7-5BCI	Renesas Electronics	OTHER FIFO	INDUSTRIAL	100	LBGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	35 mA	2048 words	3.3	3.3	18	GRID ARRAY, LOW PROFILE	BGA100,10X10,40	9	FIFOs	1 mm	85 Cel		2KX18	2K	-40 Cel	TIN LEAD	BOTTOM	S-PBGA-B100	3	3.45 V	1.5 mm	133.3 MHz	11 mm	Not Qualified	36864 bit	3.15 V	IT CAN ALSO BE CONFIGURED AS 4K X 9; RETRANSMIT; ASYNCHRONOUS MODE IS ALSO POSSIBLE	e0	30	225	YES	.015 Amp	11 mm	5 ns
72V36100L7-5BBGI	Renesas Electronics	OTHER FIFO	INDUSTRIAL	144	BGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	40 mA	65536 words	3.3	3.3	36	GRID ARRAY	BGA144,12X12,40		FIFOs	1 mm	85 Cel		64KX36	64K	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B144	3	3.45 V		133.3 MHz		Not Qualified	2359296 bit	3.15 V	RETRANSMIT; AUTO POWER DOWN; ASYNCHRONOUS MODE IS ALSO POSSIBLE	e1	40	260	YES	.015 Amp		5 ns
IDT72241L25PFG	Renesas Electronics	OTHER FIFO	COMMERCIAL	32	LQFP	SQUARE	PLASTIC/EPOXY	YES	25 ns	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	35 mA	4096 words	5	5	9	FLATPACK, LOW PROFILE	QFP32,.35SQ,32		FIFOs	.8 mm	70 Cel	3-STATE	4KX9	4K	0 Cel	Matte Tin (Sn) - annealed	QUAD	S-PQFP-G32	3	5.5 V	1.6 mm	40 MHz	7 mm	Not Qualified	36864 bit	4.5 V		e3	30	260	YES	.005 Amp	7 mm	15 ns
IDT7200L20JGB	Renesas Electronics	OTHER FIFO	MILITARY	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	30 ns	1	CMOS	MIL-STD-883 Class B	J BEND	PARALLEL	ASYNCHRONOUS	100 mA	256 words	5	5	9	CHIP CARRIER	LDCC32,.5X.6		FIFOs	1.27 mm	125 Cel		256X9	256	-55 Cel	Matte Tin (Sn) - annealed	QUAD	R-PQCC-J32	3	5.5 V	3.55 mm	33.3 MHz	11.43 mm	Not Qualified	2304 bit	4.5 V	RETRANSMIT	e3	30	260	NO	.015 Amp	13.97 mm	20 ns
IDT7200L25TDI8	Renesas Electronics	OTHER FIFO	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	35 ns	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	256 words	5	5	9	IN-LINE	DIP28,.3		FIFOs	2.54 mm	85 Cel		256X9	256	-40 Cel	TIN LEAD	DUAL	R-CDIP-T28		5.5 V		28.5 MHz		Not Qualified	2304 bit	4.5 V		e0			NO	.005 Amp		25 ns
5962-9167702MYA	Renesas Electronics	OTHER FIFO	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	65 ns	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	135 mA	8192 words	5	5	9	IN-LINE	DIP28,.3		FIFOs	2.54 mm	125 Cel	3-STATE	8KX9	8K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.08 mm	15 MHz	7.62 mm	Not Qualified	73728 bit	4.5 V	RETRANSMIT	e0			NO	.012 Amp	37.1475 mm	50 ns
IDT72V3650L6PFG	Renesas Electronics	OTHER FIFO	COMMERCIAL	128	LFQFP	RECTANGULAR	PLASTIC/EPOXY	YES	6 ns	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	40 mA	2048 words	3.3	3.3	36	FLATPACK, LOW PROFILE, FINE PITCH	QFP128,.63X.87,20		FIFOs	.5 mm	70 Cel		2KX36	2K	0 Cel	Matte Tin (Sn) - annealed	QUAD	R-PQFP-G128	3	3.45 V	1.6 mm	166 MHz	14 mm	Not Qualified	73728 bit	3.15 V	RETRANSMIT; AUTO POWER DOWN; ASYNCHRONOUS MODE IS ALSO POSSIBLE	e3	30	260	YES	.015 Amp	20 mm	4 ns
IDT72211L50LBSCDS-W	Renesas Electronics	OTHER FIFO	MILITARY	32	QCCN	RECTANGULAR	CERAMIC	YES			CMOS	38535Q/M;38534H;883B	NO LEAD		SYNCHRONOUS	50 mA	512 words	5	5	9	CHIP CARRIER	LCC32,.45X.55		FIFOs	1.27 mm	125 Cel		512X9	512	-55 Cel	TIN LEAD	QUAD	R-XQCC-N32				20 MHz		Not Qualified				e0				.005 Amp		25 ns
7202LA25DGI	Renesas Electronics	OTHER FIFO	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO	35 ns		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	1024 words	5	5	9	IN-LINE	DIP28,.6		FIFOs	2.54 mm	85 Cel		1KX9	1K	-40 Cel	MATTE TIN	DUAL	R-XDIP-T28				28.5 MHz		Not Qualified	9216 bit			e3			NO	.005 Amp		25 ns
7201LA80PB	Renesas Electronics	OTHER FIFO	MILITARY	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO			CMOS	38535Q/M;38534H;883B	THROUGH-HOLE		ASYNCHRONOUS	100 mA	512 words	5	5	9	IN-LINE	DIP28,.6		FIFOs	2.54 mm	125 Cel		512X9	512	-55 Cel	TIN LEAD	DUAL	R-PDIP-T28	1			33.3 MHz		Not Qualified				e0	20	240		.015 Amp		20 ns
IDT7206L30LB	Renesas Electronics	OTHER FIFO	MILITARY	32	QCCN	RECTANGULAR	UNSPECIFIED	YES	40 ns	1	CMOS	MIL-STD-883 Class B	NO LEAD	PARALLEL	ASYNCHRONOUS	150 mA	16384 words	5	5	9	CHIP CARRIER	LCC32,.45X.55		FIFOs	1.27 mm	125 Cel	3-STATE	16KX9	16K	-55 Cel	TIN LEAD	QUAD	R-XQCC-N32		5.5 V	3.048 mm	25 MHz	11.4554 mm	Not Qualified	147456 bit	4.5 V	RETRANSMIT	e0			NO	.012 Amp	13.97 mm	30 ns
IDT72801L10PFG8	Renesas Electronics	OTHER FIFO	COMMERCIAL	64	LQFP	SQUARE	PLASTIC/EPOXY	YES	10 ns	2	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	60 mA	256 words	5	5	9	FLATPACK, LOW PROFILE	QFP64,.66SQ,32		FIFOs	.8 mm	70 Cel		256X9	256	0 Cel	Matte Tin (Sn) - annealed	QUAD	S-PQFP-G64	3	5.5 V	1.6 mm	100 MHz	14 mm	Not Qualified	2304 bit	4.5 V		e3	30	260	YES	.01 Amp	14 mm	6.5 ns
IDT72421L25JGI	Renesas Electronics	OTHER FIFO	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	25 ns	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS	35 mA	64 words	5	5	9	CHIP CARRIER	LDCC32,.5X.6		FIFOs	1.27 mm	85 Cel		64X9	64	-40 Cel	Matte Tin (Sn) - annealed	QUAD	R-PQCC-J32	3	5.5 V	3.5 mm	40 MHz	11.43 mm	Not Qualified	576 bit	4.5 V		e3	30	260	YES	.005 Amp	13.97 mm	15 ns
IDT72T18105L4-4BB	Renesas Electronics	OTHER FIFO	COMMERCIAL	240	BGA	SQUARE	PLASTIC/EPOXY	YES	4.44 ns	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	70 mA	131072 words	2.5	2.5	18	GRID ARRAY	BGA240,18X18,40	9	FIFOs	1 mm	70 Cel		128KX18	128K	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B240	3	2.625 V	1.97 mm	100 MHz	19 mm	Not Qualified	2359296 bit	2.375 V	ALTERNATIVE MEMORY WIDTH 9; ASYNCHRONOUS OPERATION ALSO POSSIBLE	e0	30	225	YES	.02 Amp	19 mm	3.4 ns
IDT7203L20TPB	Renesas Electronics	OTHER FIFO	MILITARY	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	30 ns	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	2048 words	5	5	9	IN-LINE	DIP28,.3		FIFOs	2.54 mm	125 Cel		2KX9	2K	-55 Cel	TIN LEAD	DUAL	R-PDIP-T28		5.5 V	4.572 mm	33.3 MHz	7.62 mm	Not Qualified	18432 bit	4.5 V	RETRANSMIT	e0			NO	.025 Amp	34.671 mm	20 ns
IDT7202LA20DB	Renesas Electronics	OTHER FIFO	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	30 ns	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	1024 words	5	5	9	IN-LINE	DIP28,.6		FIFOs	2.54 mm	125 Cel	3-STATE	1KX9	1K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.08 mm	33.3 MHz	15.24 mm	Not Qualified	9216 bit	4.5 V	RETRANSMIT	e0			NO	.0009 Amp	37.211 mm	20 ns
IDT72V283L7-5BCG	Renesas Electronics	OTHER FIFO	COMMERCIAL	100	BGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	35 mA	32768 words	3.3	3.3	18	GRID ARRAY	BGA100,10X10,40	9	FIFOs	1 mm	70 Cel		32KX18	32K	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	S-PBGA-B100	3	3.45 V	1.5 mm	133.3 MHz	11 mm	Not Qualified	589824 bit	3.15 V	IT CAN ALSO BE CONFIGURED AS 64K X 9; RETRANSMIT; ASYNCHRONOUS MODE IS ALSO POSSIBLE	e1	30	260	YES	.015 Amp	11 mm	5 ns
7202LA20PDGB	Renesas Electronics	OTHER FIFO	MILITARY	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	30 ns	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	1024 words	5	5	9	IN-LINE	DIP28,.6		FIFOs	2.54 mm	125 Cel		1KX9	1K	-55 Cel	Matte Tin (Sn) - annealed	DUAL	R-PDIP-T28	1	5.5 V	4.699 mm	33.3 MHz	15.24 mm	Not Qualified	9216 bit	4.5 V	RETRANSMIT	e3	30	260	NO	.015 Amp	36.576 mm	20 ns
IDT72421L10JG	Renesas Electronics	OTHER FIFO	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	10 ns	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS	35 mA	64 words	5	5	9	CHIP CARRIER	LDCC32,.5X.6		FIFOs	1.27 mm	70 Cel		64X9	64	0 Cel	Matte Tin (Sn) - annealed	QUAD	R-PQCC-J32	3	5.5 V	3.5 mm	100 MHz	11.43 mm	Not Qualified	576 bit	4.5 V		e3	30	260	YES	.005 Amp	13.97 mm	6.5 ns
72V231L15JGI8	Renesas Electronics	OTHER FIFO	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	15 ns	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS		2048 words	3.3		9	CHIP CARRIER				1.27 mm	85 Cel		2KX9	2K	-40 Cel	Matte Tin (Sn) - annealed	QUAD	R-PQCC-J32	3	3.6 V	3.556 mm		11.4554 mm		18432 bit	3 V		e3	30	260	YES		13.9954 mm	10 ns
72V2101L20PFG8	Renesas Electronics	OTHER FIFO	COMMERCIAL	64	LQFP	SQUARE	PLASTIC/EPOXY	YES	20 ns	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		262144 words	3.3		9	FLATPACK, LOW PROFILE				.8 mm	70 Cel		256KX9	256K	0 Cel	MATTE TIN	QUAD	S-PQFP-G64	3	3.45 V	1.6 mm		14 mm	Not Qualified	2359296 bit	3.15 V	RETRANSMIT; AUTO POWER DOWN	e3			YES		14 mm	12 ns
IDT72261LA10TFG	Renesas Electronics	OTHER FIFO	COMMERCIAL	64	LFQFP	SQUARE	PLASTIC/EPOXY	YES	10 ns	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	75 mA	16384 words	5	5	9	FLATPACK, LOW PROFILE, FINE PITCH	QFP64,.47SQ,20		FIFOs	.5 mm	70 Cel		16KX9	16K	0 Cel	Matte Tin (Sn) - annealed	QUAD	S-PQFP-G64	3	5.5 V	1.6 mm	100 MHz	10 mm	Not Qualified	147456 bit	4.5 V	RETRANSMIT; AUTO POWER DOWN; EASY EXPANDABLE IN DEPTH AND WIDTH	e3	30	260	YES	.02 Amp	10 mm	8 ns
72V36100L7-5BBI	Renesas Electronics	OTHER FIFO	INDUSTRIAL	144	BGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	40 mA	65536 words	3.3	3.3	36	GRID ARRAY	BGA144,12X12,40		FIFOs	1 mm	85 Cel		64KX36	64K	-40 Cel	TIN LEAD	BOTTOM	S-PBGA-B144	3	3.45 V	1.97 mm	133.3 MHz	13 mm	Not Qualified	2359296 bit	3.15 V		e0	30	225	YES	.015 Amp	13 mm	5 ns
IDT72V06L35JG	Renesas Electronics	OTHER FIFO	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	45 ns	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	75 mA	16384 words	3.3	3.3	9	CHIP CARRIER	LDCC32,.5X.6		FIFOs	1.27 mm	70 Cel		16KX9	16K	0 Cel	Matte Tin (Sn) - annealed	QUAD	R-PQCC-J32	3	3.6 V	3.55 mm	22.2 MHz	11.43 mm	Not Qualified	147456 bit	3 V	RETRANSMIT	e3	30	260	NO	.005 Amp	13.97 mm	35 ns
IDT72T18105L4-4BBG	Renesas Electronics	OTHER FIFO	COMMERCIAL	240	BGA	SQUARE	PLASTIC/EPOXY	YES	4.44 ns	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	70 mA	131072 words	2.5	2.5	18	GRID ARRAY	BGA240,18X18,40	9	FIFOs	1 mm	70 Cel		128KX18	128K	0 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B240	3	2.625 V	1.97 mm	100 MHz	19 mm	Not Qualified	2359296 bit	2.375 V	ALTERNATIVE MEMORY WIDTH 9; ASYNCHRONOUS OPERATION ALSO POSSIBLE	e1			YES	.06 Amp	19 mm	3.4 ns
7200L30JB	Renesas Electronics	OTHER FIFO	MILITARY	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES			CMOS	38535Q/M;38534H;883B	J BEND		ASYNCHRONOUS	100 mA	256 words	5	5	9	CHIP CARRIER	LDCC32,.5X.6		FIFOs	1.27 mm	125 Cel		256X9	256	-55 Cel	TIN LEAD	QUAD	R-PQCC-J32	1			33.3 MHz		Not Qualified				e0	20	225		.015 Amp		20 ns
72V243L6BC	Renesas Electronics	OTHER FIFO	COMMERCIAL	100	LBGA	SQUARE	PLASTIC/EPOXY	YES	6 ns	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	35 mA	2048 words	3.3	3.3	18	GRID ARRAY, LOW PROFILE	BGA100,10X10,40	9	FIFOs	1 mm	70 Cel		2KX18	2K	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B100	3	3.45 V	1.5 mm	166 MHz	11 mm	Not Qualified	36864 bit	3.15 V	IT CAN ALSO BE CONFIGURED AS 4K X 9; RETRANSMIT; ASYNCHRONOUS MODE IS ALSO POSSIBLE	e0	30	225	YES	.015 Amp	11 mm	4 ns
IDT72T18125L10BB	Renesas Electronics	OTHER FIFO	COMMERCIAL	240	BGA	SQUARE	PLASTIC/EPOXY	YES	10 ns	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	70 mA	524288 words	2.5	2.5	18	GRID ARRAY	BGA240,18X18,40	9	FIFOs	1 mm	70 Cel		512KX18	512K	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B240	3	2.625 V	1.97 mm	50 MHz	19 mm	Not Qualified	9437184 bit	2.375 V	ALTERNATIVE MEMORY WIDTH 9; ASYNCHRONOUS OPERATION ALSO POSSIBLE	e0	30	225	YES	.02 Amp	19 mm	4.5 ns
7201LA50PDG	Renesas Electronics	OTHER FIFO	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	65 ns	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	512 words	5	5	9	IN-LINE	DIP28,.6		FIFOs	2.54 mm	70 Cel		512X9	512	0 Cel	Matte Tin (Sn) - annealed	DUAL	R-PDIP-T28	1	5.5 V	4.699 mm	15 MHz	15.24 mm	Not Qualified	4608 bit	4.5 V	RETRANSMIT	e3	30	260	NO	.005 Amp	36.576 mm	50 ns

FIFO

FIFO, or First-In, First-Out, is a type of digital circuit that is used in computer systems and digital devices to manage the flow of data. A FIFO circuit stores data in a buffer and retrieves the data in the same order in which it was received, with the first data received being the first data to be retrieved.

FIFO circuits are used in many applications where data needs to be stored and retrieved in a specific order, such as in data communication systems, disk drives, and multimedia devices. For example, in a data communication system, a FIFO circuit can be used to store incoming data packets in a buffer and retrieve them in the order in which they were received, ensuring that the data is processed correctly and in a timely manner.

FIFO circuits are typically implemented using a combination of flip-flops, multiplexers, and control logic. The control logic manages the input and output of data to the FIFO buffer and ensures that the data is stored and retrieved in the correct order.

One of the advantages of using a FIFO circuit is that it provides a simple and efficient way to manage the flow of data. FIFO circuits are easy to implement and can handle large amounts of data. They can also be used in conjunction with other types of digital circuits to implement more complex data processing algorithms.