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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	Cycle Time	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
72V51236L7-5BB	Renesas Electronics	OTHER FIFO	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	100 mA	16384 words	3.3	3.3	36	GRID ARRAY	BGA256,16X16,40		FIFOs	1 mm	70 Cel	16KX36	16K	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B256	3	3.45 V	3.5 mm	133 MHz	17 mm	Not Qualified	589824 bit	3.15 V	ALTERNATIVE MEMORY WIDTH:9-BIT AND 18-BIT	e0	30	225	YES	.01 Amp	17 mm	4 ns
72V51436L7-5BBI	Renesas Electronics	OTHER FIFO	INDUSTRIAL	256		SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	100 mA	16384 words	3.3	3.3	36			18	FIFOs		85 Cel	16KX36	16K	-40 Cel	TIN LEAD	BOTTOM	S-PBGA-B256	3	3.45 V		133 MHz		Not Qualified	589824 bit	3.15 V	9-BIT MEMORY WIDTH IS ALSO AVAILABLE	e0	30	225	YES	.025 Amp		4 ns
72V51243L6BB	Renesas Electronics	OTHER FIFO	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	6 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	100 mA	65536 words	3.3	3.3	18	GRID ARRAY	BGA256,16X16,40	9	FIFOs	1 mm	70 Cel	64KX18	64K	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B256	3	3.45 V	3.5 mm	166 MHz	17 mm	Not Qualified	1179648 bit	3.15 V	ALTERNATIVE MEMORY WIDTH:9-BIT	e0	30	225	YES	.01 Amp	17 mm	3.7 ns
72V51233L6BB	Renesas Electronics	OTHER FIFO	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	6 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	100 mA	32768 words	3.3	3.3	18	GRID ARRAY	BGA256,16X16,40	9	FIFOs	1 mm	70 Cel	32KX18	32K	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B256	3	3.45 V	3.5 mm	166 MHz	17 mm	Not Qualified	589824 bit	3.15 V	ALTERNATIVE MEMORY WIDTH:9-BIT	e0	30	225	YES	.01 Amp	17 mm	3.7 ns
72V51453L7-5BBI	Renesas Electronics	OTHER FIFO	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	100 mA	131072 words	3.3	3.3	18	GRID ARRAY	BGA256,16X16,40	9	FIFOs	1 mm	85 Cel	128KX18	128K	-40 Cel	TIN LEAD	BOTTOM	S-PBGA-B256	3	3.45 V		133 MHz		Not Qualified	2359296 bit	3.15 V	ALTERNATIVE MEMORY WIDTH:9-BIT	e0	30	225	YES	.01 Amp		4 ns
72V51453L7-5BB	Renesas Electronics	OTHER FIFO	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	100 mA	131072 words	3.3	3.3	18	GRID ARRAY	BGA256,16X16,40	9	FIFOs	1 mm	70 Cel	128KX18	128K	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B256	3	3.45 V		133 MHz		Not Qualified	2359296 bit	3.15 V	ALTERNATIVE MEMORY WIDTH:9-BIT	e0	30	225	YES	.01 Amp		4 ns
72V51436L6BB	Renesas Electronics	OTHER FIFO	COMMERCIAL	256		SQUARE	PLASTIC/EPOXY	YES	6 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	100 mA	16384 words	3.3	3.3	36			18	FIFOs		70 Cel	16KX36	16K	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B256	3	3.45 V		166 MHz		Not Qualified	589824 bit	3.15 V	9-BIT MEMORY WIDTH IS ALSO AVAILABLE	e0	30	225	YES	.025 Amp		3.7 ns
IDT72V51253L6BBG	Renesas Electronics		COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	6 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words	3.3		18	GRID ARRAY				1 mm	70 Cel	128KX18	128K	0 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B256	3	3.45 V	3.5 mm		17 mm	Not Qualified	2359296 bit	3.15 V	ALTERNATIVE MEMORY WIDTH:9-BIT	e1	40	260	YES		17 mm	3.7 ns
IDT72V51256L6BB8	Renesas Electronics	OTHER FIFO	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	6 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	100 mA	65536 words	3.3	3.3	36	GRID ARRAY	BGA256,16X16,40		FIFOs	1 mm	70 Cel	64KX36	64K	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B256	3	3.45 V	3.5 mm	166 MHz	17 mm	Not Qualified	2359296 bit	3.15 V	ALTERNATIVE MEMORY WIDTH:9-BIT AND 18-BIT	e0	30	225	YES	.01 Amp	17 mm	3.7 ns
IDT72V51446L6BBG8	Renesas Electronics		COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	6 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		32768 words	3.3		36	GRID ARRAY				1 mm	70 Cel	32KX36	32K	0 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B256	3	3.45 V	3.5 mm		17 mm	Not Qualified	1179648 bit	3.15 V	ALTERNATIVE MEMORY WIDTH:9-BIT AND 18-BIT	e1	40	260	YES		17 mm	3.7 ns
IDT72V51443L6BBG8	Renesas Electronics		COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	6 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		65536 words	3.3		18	GRID ARRAY				1 mm	70 Cel	64KX18	64K	0 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B256	3	3.45 V	3.5 mm		17 mm	Not Qualified	1179648 bit	3.15 V	ALTERNATIVE MEMORY WIDTH:9-BIT	e1	40	260	YES		17 mm	3.7 ns
IDT72V51456L7-5BBGI	Renesas Electronics		INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		65536 words	3.3		36	GRID ARRAY				1 mm	85 Cel	64KX36	64K	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B256	3	3.45 V	3.5 mm		17 mm	Not Qualified	2359296 bit	3.15 V	ALTERNATIVE MEMORY WIDTH:9-BIT AND 18-BIT	e1			YES		17 mm	4 ns
IDT72V51443L6BB	Renesas Electronics	OTHER FIFO	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	6 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	100 mA	65536 words	3.3	3.3	18	GRID ARRAY	BGA256,16X16,40	9	FIFOs	1 mm	70 Cel	64KX18	64K	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B256	3	3.45 V	3.5 mm	166 MHz	17 mm	Not Qualified	1179648 bit	3.15 V	ALTERNATIVE MEMORY WIDTH:9-BIT	e0	30	225	YES	.01 Amp	17 mm	3.7 ns
IDT72V51446L7-5BBG8	Renesas Electronics		COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		32768 words	3.3		36	GRID ARRAY				1 mm	70 Cel	32KX36	32K	0 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B256	3	3.45 V	3.5 mm		17 mm	Not Qualified	1179648 bit	3.15 V	ALTERNATIVE MEMORY WIDTH:9-BIT AND 18-BIT	e1	40	260	YES		17 mm	4 ns
IDT72V51456L7-5BB	Renesas Electronics	OTHER FIFO	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	100 mA	65536 words	3.3	3.3	36	GRID ARRAY	BGA256,16X16,40		FIFOs	1 mm	70 Cel	64KX36	64K	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B256	3	3.45 V	3.5 mm	133 MHz	17 mm	Not Qualified	2359296 bit	3.15 V	ALTERNATIVE MEMORY WIDTH:9-BIT AND 18-BIT	e0	30	225	YES	.01 Amp	17 mm	4 ns
IDT72V51456L6BBG	Renesas Electronics		COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	6 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		65536 words	3.3		36	GRID ARRAY				1 mm	70 Cel	64KX36	64K	0 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B256	3	3.45 V	3.5 mm		17 mm	Not Qualified	2359296 bit	3.15 V	ALTERNATIVE MEMORY WIDTH:9-BIT AND 18-BIT	e1	40	260	YES		17 mm	3.7 ns
IDT72V51256L7-5BBG	Renesas Electronics		COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		65536 words	3.3		36	GRID ARRAY				1 mm	70 Cel	64KX36	64K	0 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B256	3	3.45 V	3.5 mm		17 mm	Not Qualified	2359296 bit	3.15 V	ALTERNATIVE MEMORY WIDTH:9-BIT AND 18-BIT	e1	40	260	YES		17 mm	4 ns
IDT72V51256L7-5BB8	Renesas Electronics	OTHER FIFO	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	100 mA	65536 words	3.3	3.3	36	GRID ARRAY	BGA256,16X16,40		FIFOs	1 mm	70 Cel	64KX36	64K	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B256	3	3.45 V	3.5 mm	133 MHz	17 mm	Not Qualified	2359296 bit	3.15 V	ALTERNATIVE MEMORY WIDTH:9-BIT AND 18-BIT	e0	30	225	YES	.01 Amp	17 mm	4 ns
IDT72V51443L7-5BB8	Renesas Electronics	OTHER FIFO	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	100 mA	65536 words	3.3	3.3	18	GRID ARRAY	BGA256,16X16,40	9	FIFOs	1 mm	70 Cel	64KX18	64K	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B256	3	3.45 V	3.5 mm	133 MHz	17 mm	Not Qualified	1179648 bit	3.15 V	ALTERNATIVE MEMORY WIDTH:9-BIT	e0	30	225	YES	.01 Amp	17 mm	4 ns
IDT72V51443L7-5BBG	Renesas Electronics		COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		65536 words	3.3		18	GRID ARRAY				1 mm	70 Cel	64KX18	64K	0 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B256	3	3.45 V	3.5 mm		17 mm	Not Qualified	1179648 bit	3.15 V	ALTERNATIVE MEMORY WIDTH:9-BIT	e1	40	260	YES		17 mm	4 ns
IDT72V51443L7-5BB	Renesas Electronics	OTHER FIFO	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	100 mA	65536 words	3.3	3.3	18	GRID ARRAY	BGA256,16X16,40	9	FIFOs	1 mm	70 Cel	64KX18	64K	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B256	3	3.45 V	3.5 mm	133 MHz	17 mm	Not Qualified	1179648 bit	3.15 V	ALTERNATIVE MEMORY WIDTH:9-BIT	e0	30	225	YES	.01 Amp	17 mm	4 ns
IDT72V51253L6BB8	Renesas Electronics	OTHER FIFO	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	6 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	100 mA	131072 words	3.3	3.3	18	GRID ARRAY	BGA256,16X16,40	9	FIFOs	1 mm	70 Cel	128KX18	128K	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B256	3	3.45 V	3.5 mm	166 MHz	17 mm	Not Qualified	2359296 bit	3.15 V	ALTERNATIVE MEMORY WIDTH:9-BIT	e0	30	225	YES	.01 Amp	17 mm	3.7 ns
IDT72V51446L7-5BBGI	Renesas Electronics		INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		32768 words	3.3		36	GRID ARRAY				1 mm	85 Cel	32KX36	32K	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B256	3	3.45 V	3.5 mm		17 mm	Not Qualified	1179648 bit	3.15 V	ALTERNATIVE MEMORY WIDTH:9-BIT AND 18-BIT	e1			YES		17 mm	4 ns
IDT72V51446L7-5BB	Renesas Electronics	OTHER FIFO	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	100 mA	32768 words	3.3	3.3	36	GRID ARRAY	BGA256,16X16,40		FIFOs	1 mm	70 Cel	32KX36	32K	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B256	3	3.45 V	3.5 mm	133 MHz	17 mm	Not Qualified	1179648 bit	3.15 V	ALTERNATIVE MEMORY WIDTH:9-BIT AND 18-BIT	e0	30	225	YES	.01 Amp	17 mm	4 ns
IDT72V51443L7-5BBI	Renesas Electronics	OTHER FIFO	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	100 mA	65536 words	3.3	3.3	18	GRID ARRAY	BGA256,16X16,40	9	FIFOs	1 mm	85 Cel	64KX18	64K	-40 Cel	TIN LEAD	BOTTOM	S-PBGA-B256	3	3.45 V	3.5 mm	133 MHz	17 mm	Not Qualified	1179648 bit	3.15 V	ALTERNATIVE MEMORY WIDTH:9-BIT	e0	30	225	YES	.01 Amp	17 mm	4 ns
IDT72V51456L7-5BB8	Renesas Electronics	OTHER FIFO	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	100 mA	65536 words	3.3	3.3	36	GRID ARRAY	BGA256,16X16,40		FIFOs	1 mm	70 Cel	64KX36	64K	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B256	3	3.45 V	3.5 mm	133 MHz	17 mm	Not Qualified	2359296 bit	3.15 V	ALTERNATIVE MEMORY WIDTH:9-BIT AND 18-BIT	e0	30	225	YES	.01 Amp	17 mm	4 ns
IDT72V51446L7-5BB8	Renesas Electronics	OTHER FIFO	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	100 mA	32768 words	3.3	3.3	36	GRID ARRAY	BGA256,16X16,40		FIFOs	1 mm	70 Cel	32KX36	32K	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B256	3	3.45 V	3.5 mm	133 MHz	17 mm	Not Qualified	1179648 bit	3.15 V	ALTERNATIVE MEMORY WIDTH:9-BIT AND 18-BIT	e0	30	225	YES	.01 Amp	17 mm	4 ns
IDT72V51256L6BBG8	Renesas Electronics		COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	6 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		65536 words	3.3		36	GRID ARRAY				1 mm	70 Cel	64KX36	64K	0 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B256	3	3.45 V	3.5 mm		17 mm	Not Qualified	2359296 bit	3.15 V	ALTERNATIVE MEMORY WIDTH:9-BIT AND 18-BIT	e1	40	260	YES		17 mm	3.7 ns
IDT72V51253L7-5BB	Renesas Electronics	OTHER FIFO	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	100 mA	131072 words	3.3	3.3	18	GRID ARRAY	BGA256,16X16,40	9	FIFOs	1 mm	70 Cel	128KX18	128K	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B256	3	3.45 V	3.5 mm	133 MHz	17 mm	Not Qualified	2359296 bit	3.15 V	ALTERNATIVE MEMORY WIDTH:9-BIT	e0	30	225	YES	.01 Amp	17 mm	4 ns
IDT72V51256L7-5BBG8	Renesas Electronics		COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		65536 words	3.3		36	GRID ARRAY				1 mm	70 Cel	64KX36	64K	0 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B256	3	3.45 V	3.5 mm		17 mm	Not Qualified	2359296 bit	3.15 V	ALTERNATIVE MEMORY WIDTH:9-BIT AND 18-BIT	e1	40	260	YES		17 mm	4 ns
IDT72V51256L6BB	Renesas Electronics	OTHER FIFO	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	6 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	100 mA	65536 words	3.3	3.3	36	GRID ARRAY	BGA256,16X16,40		FIFOs	1 mm	70 Cel	64KX36	64K	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B256	3	3.45 V	3.5 mm	166 MHz	17 mm	Not Qualified	2359296 bit	3.15 V	ALTERNATIVE MEMORY WIDTH:9-BIT AND 18-BIT	e0	30	225	YES	.01 Amp	17 mm	3.7 ns
IDT72V51256L6BBG	Renesas Electronics		COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	6 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		65536 words	3.3		36	GRID ARRAY				1 mm	70 Cel	64KX36	64K	0 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B256	3	3.45 V	3.5 mm		17 mm	Not Qualified	2359296 bit	3.15 V	ALTERNATIVE MEMORY WIDTH:9-BIT AND 18-BIT	e1	40	260	YES		17 mm	3.7 ns
IDT72V51253L7.5BB	Renesas Electronics		COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words	3.3		18	GRID ARRAY				1 mm	70 Cel	128KX18	128K	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B256	3	3.45 V	3.5 mm		17 mm	Not Qualified	2359296 bit	3.15 V	ALTERNATIVE MEMORY WIDTH:9-BIT	e0			YES		17 mm	4 ns
IDT72V51456L7-5BBG8	Renesas Electronics		COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		65536 words	3.3		36	GRID ARRAY				1 mm	70 Cel	64KX36	64K	0 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B256	3	3.45 V	3.5 mm		17 mm	Not Qualified	2359296 bit	3.15 V	ALTERNATIVE MEMORY WIDTH:9-BIT AND 18-BIT	e1	40	260	YES		17 mm	4 ns
IDT72V51256L7-5BBGI	Renesas Electronics		INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		65536 words	3.3		36	GRID ARRAY				1 mm	85 Cel	64KX36	64K	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B256	3	3.45 V	3.5 mm		17 mm	Not Qualified	2359296 bit	3.15 V	ALTERNATIVE MEMORY WIDTH:9-BIT AND 18-BIT	e1			YES		17 mm	4 ns
IDT72V51443L7-5BBG8	Renesas Electronics		COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		65536 words	3.3		18	GRID ARRAY				1 mm	70 Cel	64KX18	64K	0 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B256	3	3.45 V	3.5 mm		17 mm	Not Qualified	1179648 bit	3.15 V	ALTERNATIVE MEMORY WIDTH:9-BIT	e1	40	260	YES		17 mm	4 ns
IDT72V51443L7-5BBGI	Renesas Electronics		INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		65536 words	3.3		18	GRID ARRAY				1 mm	85 Cel	64KX18	64K	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B256	3	3.45 V	3.5 mm		17 mm	Not Qualified	1179648 bit	3.15 V	ALTERNATIVE MEMORY WIDTH:9-BIT	e1			YES		17 mm	4 ns
IDT72V51456L6BB	Renesas Electronics	OTHER FIFO	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	6 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	100 mA	65536 words	3.3	3.3	36	GRID ARRAY	BGA256,16X16,40		FIFOs	1 mm	70 Cel	64KX36	64K	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B256	3	3.45 V	3.5 mm	166 MHz	17 mm	Not Qualified	2359296 bit	3.15 V	ALTERNATIVE MEMORY WIDTH:9-BIT AND 18-BIT	e0	30	225	YES	.01 Amp	17 mm	3.7 ns
IDT72V51253L6BB	Renesas Electronics	OTHER FIFO	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	6 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	100 mA	131072 words	3.3	3.3	18	GRID ARRAY	BGA256,16X16,40	9	FIFOs	1 mm	70 Cel	128KX18	128K	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B256	3	3.45 V	3.5 mm	166 MHz	17 mm	Not Qualified	2359296 bit	3.15 V	ALTERNATIVE MEMORY WIDTH:9-BIT	e0	30	225	YES	.01 Amp	17 mm	3.7 ns
IDT72V51446L6BBG	Renesas Electronics		COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	6 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		32768 words	3.3		36	GRID ARRAY				1 mm	70 Cel	32KX36	32K	0 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B256	3	3.45 V	3.5 mm		17 mm	Not Qualified	1179648 bit	3.15 V	ALTERNATIVE MEMORY WIDTH:9-BIT AND 18-BIT	e1	40	260	YES		17 mm	3.7 ns
IDT72V51456L7-5BBG	Renesas Electronics		COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		65536 words	3.3		36	GRID ARRAY				1 mm	70 Cel	64KX36	64K	0 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B256	3	3.45 V	3.5 mm		17 mm	Not Qualified	2359296 bit	3.15 V	ALTERNATIVE MEMORY WIDTH:9-BIT AND 18-BIT	e1	40	260	YES		17 mm	4 ns
IDT72V51446L7-5BBG	Renesas Electronics		COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		32768 words	3.3		36	GRID ARRAY				1 mm	70 Cel	32KX36	32K	0 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B256	3	3.45 V	3.5 mm		17 mm	Not Qualified	1179648 bit	3.15 V	ALTERNATIVE MEMORY WIDTH:9-BIT AND 18-BIT	e1	40	260	YES		17 mm	4 ns
IDT72V51253L7-5BB8	Renesas Electronics	OTHER FIFO	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	100 mA	131072 words	3.3	3.3	18	GRID ARRAY	BGA256,16X16,40	9	FIFOs	1 mm	70 Cel	128KX18	128K	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B256	3	3.45 V	3.5 mm	133 MHz	17 mm	Not Qualified	2359296 bit	3.15 V	ALTERNATIVE MEMORY WIDTH:9-BIT	e0	30	225	YES	.01 Amp	17 mm	4 ns
IDT72V51443L6BB8	Renesas Electronics	OTHER FIFO	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	6 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	100 mA	65536 words	3.3	3.3	18	GRID ARRAY	BGA256,16X16,40	9	FIFOs	1 mm	70 Cel	64KX18	64K	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B256	3	3.45 V	3.5 mm	166 MHz	17 mm	Not Qualified	1179648 bit	3.15 V	ALTERNATIVE MEMORY WIDTH:9-BIT	e0	30	225	YES	.01 Amp	17 mm	3.7 ns
IDT72V51446L6BB	Renesas Electronics	OTHER FIFO	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	6 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	100 mA	32768 words	3.3	3.3	36	GRID ARRAY	BGA256,16X16,40		FIFOs	1 mm	70 Cel	32KX36	32K	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B256	3	3.45 V	3.5 mm	166 MHz	17 mm	Not Qualified	1179648 bit	3.15 V	ALTERNATIVE MEMORY WIDTH:9-BIT AND 18-BIT	e0	30	225	YES	.01 Amp	17 mm	3.7 ns
IDT72V51256L7-5BB	Renesas Electronics	OTHER FIFO	COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	100 mA	65536 words	3.3	3.3	36	GRID ARRAY	BGA256,16X16,40		FIFOs	1 mm	70 Cel	64KX36	64K	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B256	3	3.45 V	3.5 mm	133 MHz	17 mm	Not Qualified	2359296 bit	3.15 V	ALTERNATIVE MEMORY WIDTH:9-BIT AND 18-BIT	e0	30	225	YES	.01 Amp	17 mm	4 ns
IDT72V51443L6BBG	Renesas Electronics		COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	6 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		65536 words	3.3		18	GRID ARRAY				1 mm	70 Cel	64KX18	64K	0 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B256	3	3.45 V	3.5 mm		17 mm	Not Qualified	1179648 bit	3.15 V	ALTERNATIVE MEMORY WIDTH:9-BIT	e1	40	260	YES		17 mm	3.7 ns
IDT72V51253L6BBG8	Renesas Electronics		COMMERCIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	6 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words	3.3		18	GRID ARRAY				1 mm	70 Cel	128KX18	128K	0 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B256	3	3.45 V	3.5 mm		17 mm	Not Qualified	2359296 bit	3.15 V	ALTERNATIVE MEMORY WIDTH:9-BIT	e1	40	260	YES		17 mm	3.7 ns

FIFO

FIFO, or First-In, First-Out, is a type of digital circuit that is used in computer systems and digital devices to manage the flow of data. A FIFO circuit stores data in a buffer and retrieves the data in the same order in which it was received, with the first data received being the first data to be retrieved.

FIFO circuits are used in many applications where data needs to be stored and retrieved in a specific order, such as in data communication systems, disk drives, and multimedia devices. For example, in a data communication system, a FIFO circuit can be used to store incoming data packets in a buffer and retrieve them in the order in which they were received, ensuring that the data is processed correctly and in a timely manner.

FIFO circuits are typically implemented using a combination of flip-flops, multiplexers, and control logic. The control logic manages the input and output of data to the FIFO buffer and ensures that the data is stored and retrieved in the correct order.

One of the advantages of using a FIFO circuit is that it provides a simple and efficient way to manage the flow of data. FIFO circuits are easy to implement and can handle large amounts of data. They can also be used in conjunction with other types of digital circuits to implement more complex data processing algorithms.