28 FIFO 1,771

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	Cycle Time	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
IDT7203L40TPB	Renesas Electronics	OTHER FIFO	MILITARY	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	50 ns	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	2048 words	5	5	9	IN-LINE	DIP28,.3	FIFOs	2.54 mm	125 Cel		2KX9	2K	-55 Cel	TIN LEAD	DUAL	R-PDIP-T28		5.5 V	4.572 mm	20 MHz	7.62 mm	Not Qualified	18432 bit	4.5 V	RETRANSMIT	e0			NO	.025 Amp	34.671 mm	40 ns
IDT7204L30SOGB	Renesas Electronics		MILITARY	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	40 ns	1	CMOS	MIL-STD-883 Class B	GULL WING	PARALLEL	ASYNCHRONOUS		4096 words	5		9	SMALL OUTLINE			1.27 mm	125 Cel		4KX9	4K	-55 Cel	MATTE TIN	DUAL	R-PDSO-G28	1	5.5 V	3.048 mm		8.763 mm	Not Qualified	36864 bit	4.5 V		e3			NO		18.3642 mm	30 ns
IDT7203L15DGI	Renesas Electronics		INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	25 ns	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words	5		9	IN-LINE			2.54 mm	85 Cel		2KX9	2K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28		5.5 V	5.08 mm		15.24 mm	Not Qualified	18432 bit	4.5 V		e3			NO		37.211 mm	15 ns
7202LA35TDG	Renesas Electronics	OTHER FIFO	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO	45 ns		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	1024 words	5	5	9	IN-LINE	DIP28,.3	FIFOs	2.54 mm	70 Cel		1KX9	1K	0 Cel	MATTE TIN	DUAL	R-XDIP-T28				22.2 MHz		Not Qualified	9216 bit			e3			NO	.005 Amp		35 ns
IDT7202LA35PDG	Renesas Electronics	OTHER FIFO	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	45 ns	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	1024 words	5	5	9	IN-LINE	DIP28,.6	FIFOs	2.54 mm	70 Cel		1KX9	1K	0 Cel	Matte Tin (Sn) - annealed	DUAL	R-PDIP-T28	1	5.5 V	4.699 mm	22.2 MHz	15.24 mm	Not Qualified	9216 bit	4.5 V	RETRANSMIT	e3	30	260	NO	.005 Amp	36.576 mm	35 ns
7204L50SOG8	Renesas Electronics	BI-DIRECTIONAL FIFO		28		RECTANGULAR	PLASTIC/EPOXY	YES	65 ns	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	120 mA	4096 words	5		9					70 Cel	3-STATE	4KX9	4K	0 Cel		DUAL	R-PDSO-G28		5.5 V		15 MHz			36864 bit	4.5 V					NO	.012 Amp		50 ns
5962-8966606XA	Renesas Electronics	OTHER FIFO	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	40 ns	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	256 words	5	5	9	IN-LINE	DIP28,.3	FIFOs	2.54 mm	125 Cel	3-STATE	256X9	256	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28	1	5.5 V	5.08 mm	25 MHz	7.62 mm	Qualified	2304 bit	4.5 V	RETRANSMIT	e0		240	NO	.0009 Amp	37.1475 mm	30 ns
IDT7202LA50TDG	Renesas Electronics		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	65 ns	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	5		9	IN-LINE			2.54 mm	70 Cel		1KX9	1K	0 Cel	MATTE TIN	DUAL	R-GDIP-T28		5.5 V	5.08 mm		7.62 mm	Not Qualified	9216 bit	4.5 V	RETRANSMIT	e3			NO		37.1475 mm	50 ns
7203L12DG	Renesas Electronics	BI-DIRECTIONAL FIFO	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	20 ns	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	2048 words	5	5	9	IN-LINE		FIFOs		70 Cel	3-STATE	2KX9	2K	0 Cel	MATTE TIN	DUAL	R-GDIP-T28		5.5 V		50 MHz		Not Qualified	18432 bit	4.5 V		e3			NO	.012 Amp		12 ns
7200L25TDI	Renesas Electronics	OTHER FIFO	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO			CMOS		THROUGH-HOLE		ASYNCHRONOUS	80 mA	256 words	5	5	9	IN-LINE	DIP28,.3	FIFOs	2.54 mm	85 Cel		256X9	256	-40 Cel	TIN LEAD	DUAL	R-XDIP-T28				28.5 MHz		Not Qualified				e0				.005 Amp		25 ns
IDT7201LA25TPG	Renesas Electronics		COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	35 ns	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		512 words	5		9	IN-LINE			2.54 mm	70 Cel		512X9	512	0 Cel	MATTE TIN	DUAL	R-PDIP-T28		5.5 V	4.572 mm		7.62 mm	Not Qualified	4608 bit	4.5 V	RETRANSMIT	e3			NO		34.671 mm	25 ns
7200L20TPG	Renesas Electronics	OTHER FIFO	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	30 ns	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	256 words	5	5	9	IN-LINE	DIP28,.3	FIFOs	2.54 mm	70 Cel		256X9	256	0 Cel	MATTE TIN	DUAL	R-PDIP-T28		5.5 V	4.572 mm	33.3 MHz	7.62 mm	Not Qualified	2304 bit	4.5 V	RETRANSMIT	e3			NO	.005 Amp	34.671 mm	20 ns
7203L25DGI	Renesas Electronics	BI-DIRECTIONAL FIFO	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	35 ns	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	2048 words	5	5	9	IN-LINE		FIFOs		85 Cel	3-STATE	2KX9	2K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28		5.5 V		28.5 MHz		Not Qualified	18432 bit	4.5 V		e3			NO	.012 Amp		25 ns
IDT7205L12TD	Renesas Electronics	OTHER FIFO	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	20 ns	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	8192 words	5	5	9	IN-LINE	DIP28,.3	FIFOs	2.54 mm	70 Cel		8KX9	8K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.08 mm	50 MHz	7.62 mm	Not Qualified	73728 bit	4.5 V	RETRANSMIT	e0			NO	.012 Amp	37.1475 mm	12 ns
7201LA20DGB8	Renesas Electronics	OTHER FIFO	MILITARY	28	DIP	RECTANGULAR	CERAMIC	NO			CMOS	MIL-STD-883 Class B (Modified)	THROUGH-HOLE		ASYNCHRONOUS	100 mA	512 words	5	5	9	IN-LINE	DIP28,.6	FIFOs	2.54 mm	125 Cel		512X9	512	-55 Cel	MATTE TIN	DUAL	R-XDIP-T28				33.3 MHz		Not Qualified				e3				.015 Amp		20 ns
KM75C04AP-50	Samsung		COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	25 ns	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words			9	IN-LINE			2.54 mm	70 Cel		4KX9	4K	0 Cel		DUAL	R-PDIP-T28			5.08 mm		15.24 mm	Not Qualified	36864 bit		RETRANSMIT				NO		37.1 mm	50 ns
KM75C02AN-12	Samsung	OTHER FIFO	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	20 ns	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	5	5	9	IN-LINE	DIP28,.3	FIFOs	2.54 mm	70 Cel	3-STATE	1KX9	1K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28		5.5 V	4.318 mm	50 MHz	7.62 mm	Not Qualified	9216 bit	4.5 V	RETRANSMIT	e0			NO		34.29 mm	12 ns
KM75C02AS-50	Samsung		COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	65 ns	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	5		9	IN-LINE				70 Cel	3-STATE	1KX9	1K	0 Cel		DUAL	R-PDIP-T28		5.5 V				Not Qualified	9216 bit	4.5 V	RETRANSMIT				NO			50 ns
KM75C104API-25	Samsung	OTHER FIFO	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO			CMOS		THROUGH-HOLE		ASYNCHRONOUS	120 mA	4096 words	5	5	9	IN-LINE	DIP28,.6	FIFOs	2.54 mm	85 Cel		4KX9	4K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T28	3			28.6 MHz		Not Qualified	36864 bit			e0				.005 Amp		25 ns
KM75C01AS-15	Samsung		COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	25 ns	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		512 words	5		9	IN-LINE				70 Cel	3-STATE	512X9	512	0 Cel		DUAL	R-PDIP-T28		5.5 V				Not Qualified	4608 bit	4.5 V	RETRANSMIT				NO			15 ns
KM75C101AN-35	Samsung	OTHER FIFO	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	45 ns	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	512 words	5	5	9	IN-LINE	DIP28,.3	FIFOs	2.54 mm	70 Cel	3-STATE	512X9	512	0 Cel	TIN LEAD	DUAL	R-PDIP-T28		5.5 V	4.318 mm	22 MHz	7.62 mm	Not Qualified	4608 bit	4.5 V	RETRANSMIT	e0			NO	.005 Amp	34.29 mm	35 ns
KM75C103AN-80	Samsung	OTHER FIFO	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO			CMOS		THROUGH-HOLE		ASYNCHRONOUS	60 mA	2048 words	5	5	9	IN-LINE	DIP28,.3	FIFOs	2.54 mm	70 Cel		2KX9	2K	0 Cel	TIN LEAD	DUAL	R-PDIP-T28	3					Not Qualified	18432 bit			e0				.005 Amp		80 ns
KM75C03AS-25	Samsung		COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	35 ns	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words	5		9	IN-LINE				70 Cel	3-STATE	2KX9	2K	0 Cel		DUAL	R-PDIP-T28		5.5 V				Not Qualified	18432 bit	4.5 V	RETRANSMIT				NO			25 ns
KM75C03API-80	Samsung	OTHER FIFO	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO			CMOS		THROUGH-HOLE		ASYNCHRONOUS	60 mA	2048 words	5	5	9	IN-LINE	DIP28,.6	FIFOs	2.54 mm	85 Cel		2KX9	2K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T28	3			10 MHz		Not Qualified	18432 bit			e0				.005 Amp		80 ns
KM75C02AN-20	Samsung	OTHER FIFO	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	30 ns	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	1024 words	5	5	9	IN-LINE	DIP28,.3	FIFOs	2.54 mm	70 Cel	3-STATE	1KX9	1K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28		5.5 V	4.318 mm	33.33 MHz	7.62 mm	Not Qualified	9216 bit	4.5 V	RETRANSMIT	e0			NO	.005 Amp	34.29 mm	20 ns
KM75C103ANI-80	Samsung	OTHER FIFO	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO			CMOS		THROUGH-HOLE		ASYNCHRONOUS	60 mA	2048 words	5	5	9	IN-LINE	DIP28,.3	FIFOs	2.54 mm	85 Cel		2KX9	2K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T28	3					Not Qualified	18432 bit			e0				.005 Amp		80 ns
KM75C101AP-25	Samsung	OTHER FIFO	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	35 ns	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	512 words	5	5	9	IN-LINE	DIP28,.6	FIFOs	2.54 mm	70 Cel	3-STATE	512X9	512	0 Cel	TIN LEAD	DUAL	R-PDIP-T28		5.5 V	5.08 mm	28 MHz	15.24 mm	Not Qualified	4608 bit	4.5 V	RETRANSMIT	e0			NO	.005 Amp	37.1 mm	25 ns
KM75C02AP-120	Samsung	OTHER FIFO	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO			CMOS		THROUGH-HOLE		ASYNCHRONOUS	60 mA	1024 words	5	5	9	IN-LINE	DIP28,.6	FIFOs	2.54 mm	70 Cel		1KX9	1K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28						Not Qualified	9216 bit			e0						120 ns
KM75C101ANI-80	Samsung	OTHER FIFO	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO			CMOS		THROUGH-HOLE		ASYNCHRONOUS		512 words	5	5	9	IN-LINE	DIP28,.3	FIFOs	2.54 mm	85 Cel		512X9	512	-40 Cel	TIN LEAD	DUAL	R-PDIP-T28	3					Not Qualified				e0				.005 Amp		80 ns
KM75C101AP-20	Samsung	OTHER FIFO	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	30 ns	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	512 words	5	5	9	IN-LINE	DIP28,.6	FIFOs	2.54 mm	70 Cel	3-STATE	512X9	512	0 Cel	TIN LEAD	DUAL	R-PDIP-T28		5.5 V	5.08 mm	33 MHz	15.24 mm	Not Qualified	4608 bit	4.5 V	RETRANSMIT	e0			NO	.005 Amp	37.1 mm	20 ns
KM75C103AN-35	Samsung	OTHER FIFO	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	45 ns	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	2048 words	5	5	9	IN-LINE	DIP28,.3	FIFOs	2.54 mm	70 Cel	3-STATE	2KX9	2K	0 Cel	TIN LEAD	DUAL	R-PDIP-T28		5.5 V	4.318 mm	22 MHz	7.62 mm	Not Qualified	18432 bit	4.5 V	RETRANSMIT	e0			NO	.005 Amp	34.29 mm	35 ns
KM75C101API-35	Samsung	OTHER FIFO	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO			CMOS		THROUGH-HOLE		ASYNCHRONOUS	100 mA	512 words	5	5	9	IN-LINE	DIP28,.6	FIFOs	2.54 mm	85 Cel		512X9	512	-40 Cel	TIN LEAD	DUAL	R-PDIP-T28	3			22 MHz		Not Qualified				e0				.005 Amp		35 ns
KM75C102AN-35	Samsung	OTHER FIFO	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	45 ns	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	1024 words	5	5	9	IN-LINE	DIP28,.3	FIFOs	2.54 mm	70 Cel	3-STATE	1KX9	1K	0 Cel	TIN LEAD	DUAL	R-PDIP-T28		5.5 V	4.318 mm	22 MHz	7.62 mm	Not Qualified	9216 bit	4.5 V	RETRANSMIT	e0			NO	.005 Amp	34.29 mm	35 ns
KM75C101AP-80	Samsung	OTHER FIFO	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO			CMOS		THROUGH-HOLE		ASYNCHRONOUS		512 words	5	5	9	IN-LINE	DIP28,.6	FIFOs	2.54 mm	70 Cel		512X9	512	0 Cel	TIN LEAD	DUAL	R-PDIP-T28	3					Not Qualified				e0				.005 Amp		80 ns
KM75C101API-80	Samsung	OTHER FIFO	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO			CMOS		THROUGH-HOLE		ASYNCHRONOUS		512 words	5	5	9	IN-LINE	DIP28,.6	FIFOs	2.54 mm	85 Cel		512X9	512	-40 Cel	TIN LEAD	DUAL	R-PDIP-T28	3					Not Qualified				e0				.005 Amp		80 ns
KM75C102AP-20	Samsung		COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	30 ns	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	5		9	IN-LINE			2.54 mm	70 Cel	3-STATE	1KX9	1K	0 Cel		DUAL	R-PDIP-T28		5.5 V	5.08 mm		15.24 mm	Not Qualified	9216 bit	4.5 V	RETRANSMIT				NO		37.1 mm	20 ns
KM75C03ANI-35	Samsung	OTHER FIFO	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO			CMOS		THROUGH-HOLE		ASYNCHRONOUS	60 mA	2048 words	5	5	9	IN-LINE	DIP28,.3	FIFOs	2.54 mm	85 Cel		2KX9	2K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T28	3			22 MHz		Not Qualified	18432 bit			e0				.005 Amp		35 ns
KM75C02AP-15	Samsung	OTHER FIFO	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	25 ns	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	1024 words	5	5	9	IN-LINE	DIP28,.6	FIFOs	2.54 mm	70 Cel	3-STATE	1KX9	1K	0 Cel	TIN LEAD	DUAL	R-PDIP-T28		5.5 V	5.08 mm	40 MHz	15.24 mm	Not Qualified	9216 bit	4.5 V	RETRANSMIT	e0			NO	.005 Amp	36.32 mm	15 ns
KM75C102AP-25	Samsung		COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	35 ns	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	5		9	IN-LINE			2.54 mm	70 Cel	3-STATE	1KX9	1K	0 Cel		DUAL	R-PDIP-T28		5.5 V	5.08 mm		15.24 mm	Not Qualified	9216 bit	4.5 V	RETRANSMIT				NO		37.1 mm	25 ns
KM75C103AP-20	Samsung	OTHER FIFO	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	30 ns	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	2048 words	5	5	9	IN-LINE	DIP28,.6	FIFOs	2.54 mm	70 Cel	3-STATE	2KX9	2K	0 Cel	TIN LEAD	DUAL	R-PDIP-T28		5.5 V	5.08 mm	40 MHz	15.24 mm	Not Qualified	18432 bit	4.5 V	RETRANSMIT	e0			NO	.005 Amp	37.1 mm	20 ns
KM75C04AN-80	Samsung		COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	25 ns	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words			9	IN-LINE			2.54 mm	70 Cel		4KX9	4K	0 Cel		DUAL	R-PDIP-T28			4.318 mm		7.62 mm	Not Qualified	36864 bit		RETRANSMIT				NO		34.29 mm	80 ns
KM75C01AP-50	Samsung	OTHER FIFO	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	65 ns	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	512 words	5	5	9	IN-LINE	DIP28,.6	FIFOs	2.54 mm	70 Cel	3-STATE	512X9	512	0 Cel	TIN LEAD	DUAL	R-PDIP-T28		5.5 V	5.08 mm	15.38 MHz	15.24 mm	Not Qualified	4608 bit	4.5 V	RETRANSMIT	e0			NO	.005 Amp	36.32 mm	50 ns
KM75C101AN-20	Samsung	OTHER FIFO	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	30 ns	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	512 words	5	5	9	IN-LINE	DIP28,.3	FIFOs	2.54 mm	70 Cel	3-STATE	512X9	512	0 Cel	TIN LEAD	DUAL	R-PDIP-T28		5.5 V	4.318 mm	33 MHz	7.62 mm	Not Qualified	4608 bit	4.5 V	RETRANSMIT	e0			NO	.005 Amp	34.29 mm	20 ns
KM75C03AN-50	Samsung	OTHER FIFO	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	65 ns	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	2048 words	5	5	9	IN-LINE	DIP28,.3	FIFOs	2.54 mm	70 Cel	3-STATE	2KX9	2K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28		5.5 V	4.318 mm	15 MHz	7.62 mm	Not Qualified	18432 bit	4.5 V	RETRANSMIT	e0			NO	.005 Amp	34.29 mm	50 ns
KM75C101ANI-35	Samsung	OTHER FIFO	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO			CMOS		THROUGH-HOLE		ASYNCHRONOUS	100 mA	512 words	5	5	9	IN-LINE	DIP28,.3	FIFOs	2.54 mm	85 Cel		512X9	512	-40 Cel	TIN LEAD	DUAL	R-PDIP-T28	3			22 MHz		Not Qualified				e0				.005 Amp		35 ns
KM75C02AN-15	Samsung	OTHER FIFO	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	25 ns	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	1024 words	5	5	9	IN-LINE	DIP28,.3	FIFOs	2.54 mm	70 Cel	3-STATE	1KX9	1K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28		5.5 V	4.318 mm	40 MHz	7.62 mm	Not Qualified	9216 bit	4.5 V	RETRANSMIT	e0			NO	.005 Amp	34.29 mm	15 ns
KM75C102AN-20	Samsung	OTHER FIFO	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	30 ns	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	1024 words	5	5	9	IN-LINE	DIP28,.3	FIFOs	2.54 mm	70 Cel	3-STATE	1KX9	1K	0 Cel	TIN LEAD	DUAL	R-PDIP-T28		5.5 V	4.318 mm	33 MHz	7.62 mm	Not Qualified	9216 bit	4.5 V	RETRANSMIT	e0			NO	.005 Amp	34.29 mm	20 ns
KM75C103API-25	Samsung	OTHER FIFO	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO			CMOS		THROUGH-HOLE		ASYNCHRONOUS	60 mA	2048 words	5	5	9	IN-LINE	DIP28,.6	FIFOs	2.54 mm	85 Cel		2KX9	2K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T28	3			28.6 MHz		Not Qualified	18432 bit			e0				.005 Amp		25 ns

FIFO

FIFO, or First-In, First-Out, is a type of digital circuit that is used in computer systems and digital devices to manage the flow of data. A FIFO circuit stores data in a buffer and retrieves the data in the same order in which it was received, with the first data received being the first data to be retrieved.

FIFO circuits are used in many applications where data needs to be stored and retrieved in a specific order, such as in data communication systems, disk drives, and multimedia devices. For example, in a data communication system, a FIFO circuit can be used to store incoming data packets in a buffer and retrieve them in the order in which they were received, ensuring that the data is processed correctly and in a timely manner.

FIFO circuits are typically implemented using a combination of flip-flops, multiplexers, and control logic. The control logic manages the input and output of data to the FIFO buffer and ensures that the data is stored and retrieved in the correct order.

One of the advantages of using a FIFO circuit is that it provides a simple and efficient way to manage the flow of data. FIFO circuits are easy to implement and can handle large amounts of data. They can also be used in conjunction with other types of digital circuits to implement more complex data processing algorithms.