LBGA FIFO 136

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	Cycle Time	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
IDT72V2113L7-5BCG	Renesas Electronics	OTHER FIFO	COMMERCIAL	100	LBGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	35 mA	262144 words	3.3	3.3	18	GRID ARRAY, LOW PROFILE	BGA100,10X10,40	9	FIFOs	1 mm	70 Cel	256KX18	256K	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	S-PBGA-B100	3	3.45 V	1.5 mm	133.3 MHz	11 mm	Not Qualified	4718592 bit	3.15 V	ALTERNATIVE MEMORY WIDTH 9; ASYNCHRONOUS MODE ALSO POSSIBLE	e1	30	260	YES	.015 Amp	11 mm	5 ns
IDT72V253L7-5BC	Renesas Electronics	OTHER FIFO	COMMERCIAL	100	LBGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	35 mA	4096 words	3.3	3.3	18	GRID ARRAY, LOW PROFILE	BGA100,10X10,40	9	FIFOs	1 mm	70 Cel	4KX18	4K	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B100	3	3.45 V	1.5 mm	133.3 MHz	11 mm	Not Qualified	73728 bit	3.15 V	IT CAN ALSO BE CONFIGURED AS 8K X 9; RETRANSMIT; ASYNCHRONOUS MODE IS ALSO POSSIBLE	e0	30	225	YES	.015 Amp	11 mm	5 ns
72V263L7-5BCG8	Renesas Electronics		COMMERCIAL	100	LBGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		8192 words	3.3		18	GRID ARRAY, LOW PROFILE				1 mm	70 Cel	8KX18	8K	0 Cel		BOTTOM	S-PBGA-B100		3.45 V	1.5 mm		11 mm		147456 bit	3.15 V	IT CAN ALSO BE CONFIGURED AS 16K X 9; RETRANSMIT; ASYNCHRONOUS MODE IS ALSO POSSIBLE		NOT SPECIFIED	NOT SPECIFIED	YES		11 mm	5 ns
IDT72V243L7-5BC	Renesas Electronics	OTHER FIFO	COMMERCIAL	100	LBGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	35 mA	2048 words	3.3	3.3	18	GRID ARRAY, LOW PROFILE	BGA100,10X10,40	9	FIFOs	1 mm	70 Cel	2KX18	2K	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B100	3	3.45 V	1.5 mm	133.3 MHz	11 mm	Not Qualified	36864 bit	3.15 V	IT CAN ALSO BE CONFIGURED AS 4K X 9; RETRANSMIT; ASYNCHRONOUS MODE IS ALSO POSSIBLE	e0	30	225	YES	.015 Amp	11 mm	5 ns
IDT72V2103L7-5BC	Renesas Electronics	OTHER FIFO	COMMERCIAL	100	LBGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	35 mA	131072 words	3.3	3.3	18	GRID ARRAY, LOW PROFILE	BGA100,10X10,40	9	FIFOs	1 mm	70 Cel	128KX18	128K	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B100	3	3.45 V	1.5 mm	133.3 MHz	11 mm	Not Qualified	2359296 bit	3.15 V	ALTERNATIVE MEMORY WIDTH 9; ASYNCHRONOUS MODE ALSO POSSIBLE	e0	30	225	YES	.015 Amp	11 mm	5 ns
IDT72V263L7-5BCI	Renesas Electronics	OTHER FIFO	INDUSTRIAL	100	LBGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	35 mA	8192 words	3.3	3.3	18	GRID ARRAY, LOW PROFILE	BGA100,10X10,40	9	FIFOs	1 mm	85 Cel	8KX18	8K	-40 Cel	TIN LEAD	BOTTOM	S-PBGA-B100	3	3.45 V	1.5 mm	133.3 MHz	11 mm	Not Qualified	147456 bit	3.15 V	IT CAN ALSO BE CONFIGURED AS 16K X 9; RETRANSMIT; ASYNCHRONOUS MODE IS ALSO POSSIBLE	e0	30	225	YES	.015 Amp	11 mm	5 ns
IDT72V283L39268BCGI	Renesas Electronics		INDUSTRIAL	100	LBGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		32768 words	3.3		18	GRID ARRAY, LOW PROFILE				1 mm	85 Cel	32KX18	32K	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B100	3	3.45 V	1.5 mm		11 mm	Not Qualified	589824 bit	3.15 V	IT CAN ALSO BE CONFIGURED AS 64K X 9	e1			YES		11 mm	5 ns
72V2103L6BC	Renesas Electronics	OTHER FIFO	COMMERCIAL	100	LBGA	SQUARE	PLASTIC/EPOXY	YES	6 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	35 mA	131072 words	3.3	3.3	18	GRID ARRAY, LOW PROFILE	BGA100,10X10,40	9	FIFOs	1 mm	70 Cel	128KX18	128K	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B100	3	3.45 V	1.5 mm	166 MHz	11 mm	Not Qualified	2359296 bit	3.15 V	ALTERNATIVE MEMORY WIDTH 9; ASYNCHRONOUS MODE ALSO POSSIBLE	e0	30	225	YES	.015 Amp	11 mm	4 ns
IDT72V223L7-5BC	Renesas Electronics	OTHER FIFO	COMMERCIAL	100	LBGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	35 mA	512 words	3.3	3.3	18	GRID ARRAY, LOW PROFILE	BGA100,10X10,40	9	FIFOs	1 mm	70 Cel	512X18	512	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B100	3	3.45 V	1.5 mm	133.3 MHz	11 mm	Not Qualified	9216 bit	3.15 V	IT CAN ALSO BE CONFIGURED AS 1K X 9; RETRANSMIT; ASYNCHRONOUS MODE IS ALSO POSSIBLE	e0	30	225	YES	.015 Amp	11 mm	5 ns
72V273L6BCG8	Renesas Electronics		COMMERCIAL	100	LBGA	SQUARE	PLASTIC/EPOXY	YES	6 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		16384 words	3.3		18	GRID ARRAY, LOW PROFILE				1 mm	70 Cel	16KX18	16K	0 Cel		BOTTOM	S-PBGA-B100		3.45 V	1.5 mm		11 mm		294912 bit	3.15 V	IT CAN ALSO BE CONFIGURED AS 32K X 9; RETRANSMIT; ASYNCHRONOUS MODE IS ALSO POSSIBLE		NOT SPECIFIED	NOT SPECIFIED	YES		11 mm	4 ns
IDT72V253L39268BCG	Renesas Electronics		COMMERCIAL	100	LBGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4096 words	3.3		18	GRID ARRAY, LOW PROFILE				1 mm	70 Cel	4KX18	4K	0 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B100	3	3.45 V	1.5 mm		11 mm	Not Qualified	73728 bit	3.15 V	IT CAN ALSO BE CONFIGURED AS 8K X 9	e1			YES		11 mm	5 ns
72V253L6BC	Renesas Electronics	OTHER FIFO	COMMERCIAL	100	LBGA	SQUARE	PLASTIC/EPOXY	YES	6 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	35 mA	4096 words	3.3	3.3	18	GRID ARRAY, LOW PROFILE	BGA100,10X10,40	9	FIFOs	1 mm	70 Cel	4KX18	4K	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B100	3	3.45 V	1.5 mm	166 MHz	11 mm	Not Qualified	73728 bit	3.15 V	IT CAN ALSO BE CONFIGURED AS 8K X 9; RETRANSMIT; ASYNCHRONOUS MODE IS ALSO POSSIBLE	e0	30	225	YES	.015 Amp	11 mm	4 ns
72V273L7-5BCI	Renesas Electronics	OTHER FIFO	INDUSTRIAL	100	LBGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	35 mA	16384 words	3.3	3.3	18	GRID ARRAY, LOW PROFILE	BGA100,10X10,40	9	FIFOs	1 mm	85 Cel	16KX18	16K	-40 Cel	TIN LEAD	BOTTOM	S-PBGA-B100	3	3.45 V	1.5 mm	133.3 MHz	11 mm	Not Qualified	294912 bit	3.15 V	IT CAN ALSO BE CONFIGURED AS 32K X 9; RETRANSMIT; ASYNCHRONOUS MODE IS ALSO POSSIBLE	e0	30	225	YES	.015 Amp	11 mm	5 ns
72V243L7-5BCGI	Renesas Electronics	OTHER FIFO	INDUSTRIAL	100	LBGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	35 mA	2048 words	3.3	3.3	18	GRID ARRAY, LOW PROFILE	BGA100,10X10,40	9	FIFOs	1 mm	85 Cel	2KX18	2K	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	S-PBGA-B100	3	3.45 V	1.5 mm	133.3 MHz	11 mm	Not Qualified	36864 bit	3.15 V	IT CAN ALSO BE CONFIGURED AS 4K X 9; RETRANSMIT; ASYNCHRONOUS MODE IS ALSO POSSIBLE	e1	30	260	YES	.015 Amp	11 mm	5 ns
72V293L7-5BCG8	Renesas Electronics		COMMERCIAL	100	LBGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		65536 words	3.3		18	GRID ARRAY, LOW PROFILE				1 mm	70 Cel	64KX18	64K	0 Cel		BOTTOM	S-PBGA-B100		3.45 V	1.5 mm		11 mm		1179648 bit	3.15 V	IT CAN ALSO BE CONFIGURED AS 128K X 9; RETRANSMIT; ASYNCHRONOUS MODE IS ALSO POSSIBLE		NOT SPECIFIED	NOT SPECIFIED	YES		11 mm	5 ns
72V283L7-5BCI	Renesas Electronics	OTHER FIFO	INDUSTRIAL	100	LBGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	35 mA	32768 words	3.3	3.3	18	GRID ARRAY, LOW PROFILE	BGA100,10X10,40	9	FIFOs	1 mm	85 Cel	32KX18	32K	-40 Cel	TIN LEAD	BOTTOM	S-PBGA-B100	3	3.45 V	1.5 mm	133.3 MHz	11 mm	Not Qualified	589824 bit	3.15 V	IT CAN ALSO BE CONFIGURED AS 64K X 9; RETRANSMIT; ASYNCHRONOUS MODE IS ALSO POSSIBLE	e0	30	225	YES	.015 Amp	11 mm	5 ns
IDT72V293L7-5BC	Renesas Electronics	OTHER FIFO	COMMERCIAL	100	LBGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	35 mA	65536 words	3.3	3.3	18	GRID ARRAY, LOW PROFILE	BGA100,10X10,40	9	FIFOs	1 mm	70 Cel	64KX18	64K	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B100	3	3.45 V	1.5 mm	133.3 MHz	11 mm	Not Qualified	1179648 bit	3.15 V	IT CAN ALSO BE CONFIGURED AS 128K X 9; RETRANSMIT; ASYNCHRONOUS MODE IS ALSO POSSIBLE	e0	30	225	YES	.015 Amp	11 mm	5 ns
72V233L7-5BCG8	Renesas Electronics		COMMERCIAL	100	LBGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1024 words	3.3		18	GRID ARRAY, LOW PROFILE				1 mm	70 Cel	1KX18	1K	0 Cel		BOTTOM	S-PBGA-B100		3.45 V	1.5 mm		11 mm		18432 bit	3.15 V	IT CAN ALSO BE CONFIGURED AS 2K X 9; RETRANSMIT; ASYNCHRONOUS MODE IS ALSO POSSIBLE		NOT SPECIFIED	NOT SPECIFIED	YES		11 mm	5 ns
72V223L6BCG8	Renesas Electronics		COMMERCIAL	100	LBGA	SQUARE	PLASTIC/EPOXY	YES	6 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		512 words	3.3		18	GRID ARRAY, LOW PROFILE				1 mm	70 Cel	512X18	512	0 Cel		BOTTOM	S-PBGA-B100		3.45 V	1.5 mm		11 mm		9216 bit	3.15 V	IT CAN ALSO BE CONFIGURED AS 1K X 9; RETRANSMIT; ASYNCHRONOUS MODE IS ALSO POSSIBLE		NOT SPECIFIED	NOT SPECIFIED	YES		11 mm	4 ns
IDT72V2103L7-5BCGI	Renesas Electronics	OTHER FIFO	INDUSTRIAL	100	LBGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	35 mA	131072 words	3.3	3.3	18	GRID ARRAY, LOW PROFILE	BGA100,10X10,40	9	FIFOs	1 mm	85 Cel	128KX18	128K	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	S-PBGA-B100	3	3.45 V	1.5 mm	133.3 MHz	11 mm	Not Qualified	2359296 bit	3.15 V	ALTERNATIVE MEMORY WIDTH 9; ASYNCHRONOUS MODE ALSO POSSIBLE	e1	30	260	YES	.015 Amp	11 mm	5 ns
IDT72V263L39268BCG	Renesas Electronics		COMMERCIAL	100	LBGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		8192 words	3.3		18	GRID ARRAY, LOW PROFILE				1 mm	70 Cel	8KX18	8K	0 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B100	3	3.45 V	1.5 mm		11 mm	Not Qualified	147456 bit	3.15 V	IT CAN ALSO BE CONFIGURED AS 16K X 9	e1			YES		11 mm	5 ns
IDT72V2113L6BC	Renesas Electronics	OTHER FIFO	COMMERCIAL	100	LBGA	SQUARE	PLASTIC/EPOXY	YES	6 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	35 mA	262144 words	3.3	3.3	18	GRID ARRAY, LOW PROFILE	BGA100,10X10,40	9	FIFOs	1 mm	70 Cel	256KX18	256K	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B100	3	3.45 V	1.5 mm	166 MHz	11 mm	Not Qualified	4718592 bit	3.15 V	ALTERNATIVE MEMORY WIDTH 9; ASYNCHRONOUS MODE ALSO POSSIBLE	e0	30	225	YES	.015 Amp	11 mm	4 ns
72V233L6BCG8	Renesas Electronics		COMMERCIAL	100	LBGA	SQUARE	PLASTIC/EPOXY	YES	6 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1024 words	3.3		18	GRID ARRAY, LOW PROFILE				1 mm	70 Cel	1KX18	1K	0 Cel		BOTTOM	S-PBGA-B100		3.45 V	1.5 mm		11 mm		18432 bit	3.15 V	IT CAN ALSO BE CONFIGURED AS 2K X 9; RETRANSMIT; ASYNCHRONOUS MODE IS ALSO POSSIBLE		NOT SPECIFIED	NOT SPECIFIED	YES		11 mm	4 ns
IDT72V2113L6BCG	Renesas Electronics	OTHER FIFO	COMMERCIAL	100	LBGA	SQUARE	PLASTIC/EPOXY	YES	6 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	35 mA	262144 words	3.3	3.3	18	GRID ARRAY, LOW PROFILE	BGA100,10X10,40	9	FIFOs	1 mm	70 Cel	256KX18	256K	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	S-PBGA-B100	3	3.45 V	1.5 mm	166 MHz	11 mm	Not Qualified	4718592 bit	3.15 V	ALTERNATIVE MEMORY WIDTH 9; ASYNCHRONOUS MODE ALSO POSSIBLE	e1	30	260	YES	.015 Amp	11 mm	4 ns
72V263L6BC	Renesas Electronics	OTHER FIFO	COMMERCIAL	100	LBGA	SQUARE	PLASTIC/EPOXY	YES	6 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	35 mA	8192 words	3.3	3.3	18	GRID ARRAY, LOW PROFILE	BGA100,10X10,40	9	FIFOs	1 mm	70 Cel	8KX18	8K	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B100	3	3.45 V	1.5 mm	166 MHz	11 mm	Not Qualified	147456 bit	3.15 V	IT CAN ALSO BE CONFIGURED AS 16K X 9; RETRANSMIT; ASYNCHRONOUS MODE IS ALSO POSSIBLE	e0	30	225	YES	.015 Amp	11 mm	4 ns
72V233L7-5BCI	Renesas Electronics	OTHER FIFO	INDUSTRIAL	100	LBGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	35 mA	1024 words	3.3	3.3	18	GRID ARRAY, LOW PROFILE	BGA100,10X10,40	9	FIFOs	1 mm	85 Cel	1KX18	1K	-40 Cel	TIN LEAD	BOTTOM	S-PBGA-B100	3	3.45 V	1.5 mm	133.3 MHz	11 mm	Not Qualified	18432 bit	3.15 V	IT CAN ALSO BE CONFIGURED AS 2K X 9; RETRANSMIT; ASYNCHRONOUS MODE IS ALSO POSSIBLE	e0	30	225	YES	.015 Amp	11 mm	5 ns
IDT72V273L7-5BCI	Renesas Electronics	OTHER FIFO	INDUSTRIAL	100	LBGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	35 mA	16384 words	3.3	3.3	18	GRID ARRAY, LOW PROFILE	BGA100,10X10,40	9	FIFOs	1 mm	85 Cel	16KX18	16K	-40 Cel	TIN LEAD	BOTTOM	S-PBGA-B100	3	3.45 V	1.5 mm	133.3 MHz	11 mm	Not Qualified	294912 bit	3.15 V	IT CAN ALSO BE CONFIGURED AS 32K X 9; RETRANSMIT; ASYNCHRONOUS MODE IS ALSO POSSIBLE	e0	30	225	YES	.015 Amp	11 mm	5 ns
72V2103L6BCG8	Renesas Electronics	OTHER FIFO	COMMERCIAL	100	LBGA	SQUARE	PLASTIC/EPOXY	YES	6 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words	3.3		18	GRID ARRAY, LOW PROFILE				1 mm	70 Cel	128KX18	128K	0 Cel		BOTTOM	S-PBGA-B100		3.45 V	1.5 mm		11 mm		2359296 bit	3.15 V	ALTERNATIVE MEMORY WIDTH 9; ASYNCHRONOUS MODE ALSO POSSIBLE				YES		11 mm	4 ns
72V243L6BCG8	Renesas Electronics		COMMERCIAL	100	LBGA	SQUARE	PLASTIC/EPOXY	YES	6 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2048 words	3.3		18	GRID ARRAY, LOW PROFILE				1 mm	70 Cel	2KX18	2K	0 Cel		BOTTOM	S-PBGA-B100		3.45 V	1.5 mm		11 mm		36864 bit	3.15 V	IT CAN ALSO BE CONFIGURED AS 4K X 9; RETRANSMIT; ASYNCHRONOUS MODE IS ALSO POSSIBLE		NOT SPECIFIED	NOT SPECIFIED	YES		11 mm	4 ns
72V253L7-5BCGI	Renesas Electronics	OTHER FIFO	INDUSTRIAL	100	LBGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	35 mA	4096 words	3.3	3.3	18	GRID ARRAY, LOW PROFILE	BGA100,10X10,40	9	FIFOs	1 mm	85 Cel	4KX18	4K	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	S-PBGA-B100	3	3.45 V	1.5 mm	133.3 MHz	11 mm	Not Qualified	73728 bit	3.15 V	IT CAN ALSO BE CONFIGURED AS 8K X 9; RETRANSMIT; ASYNCHRONOUS MODE IS ALSO POSSIBLE	e1	30	260	YES	.015 Amp	11 mm	5 ns
IDT72V2113L7-5BCI	Renesas Electronics	OTHER FIFO	INDUSTRIAL	100	LBGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	35 mA	262144 words	3.3	3.3	18	GRID ARRAY, LOW PROFILE	BGA100,10X10,40	9	FIFOs	1 mm	85 Cel	256KX18	256K	-40 Cel	TIN LEAD	BOTTOM	S-PBGA-B100	3	3.45 V	1.5 mm	133.3 MHz	11 mm	Not Qualified	4718592 bit	3.15 V	ALTERNATIVE MEMORY WIDTH 9; ASYNCHRONOUS MODE ALSO POSSIBLE	e0	30	225	YES	.015 Amp	11 mm	5 ns
72V233L6BC	Renesas Electronics	OTHER FIFO	COMMERCIAL	100	LBGA	SQUARE	PLASTIC/EPOXY	YES	6 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	35 mA	1024 words	3.3	3.3	18	GRID ARRAY, LOW PROFILE	BGA100,10X10,40	9	FIFOs	1 mm	70 Cel	1KX18	1K	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B100	3	3.45 V	1.5 mm	166 MHz	11 mm	Not Qualified	18432 bit	3.15 V	IT CAN ALSO BE CONFIGURED AS 2K X 9; RETRANSMIT; ASYNCHRONOUS MODE IS ALSO POSSIBLE	e0	30	225	YES	.015 Amp	11 mm	4 ns
72V2103L7.5BCGI	Renesas Electronics		INDUSTRIAL	100	LBGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words	3.3		18	GRID ARRAY, LOW PROFILE				1 mm	85 Cel	128KX18	128K	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B100	3	3.45 V	1.5 mm		11 mm	Not Qualified	2359296 bit	3.15 V	CAN ALSO BE CONFIGURED AS 262,144 X 9	e1			YES		11 mm	5 ns
IDT72V2113L7.5BCGI	Renesas Electronics		INDUSTRIAL	100	LBGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words	3.3		18	GRID ARRAY, LOW PROFILE				1 mm	85 Cel	256KX18	256K	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B100	3	3.45 V	1.5 mm		11 mm	Not Qualified	4718592 bit	3.15 V	CAN ALSO BE CONFIGURED AS 524,288 X 9	e1			YES		11 mm	5 ns
IDT72V223L39268BCGI	Renesas Electronics		INDUSTRIAL	100	LBGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		512 words	3.3		18	GRID ARRAY, LOW PROFILE				1 mm	85 Cel	512X18	512	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B100	3	3.45 V	1.5 mm		11 mm	Not Qualified	9216 bit	3.15 V	IT CAN ALSO BE CONFIGURED AS 1K X 9	e1			YES		11 mm	5 ns
72V273L7-5BCG	Renesas Electronics	OTHER FIFO	COMMERCIAL	100	LBGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	35 mA	16384 words	3.3	3.3	18	GRID ARRAY, LOW PROFILE	BGA100,10X10,40	9	FIFOs	1 mm	70 Cel	16KX18	16K	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	S-PBGA-B100	3	3.45 V	1.5 mm	133.3 MHz	11 mm	Not Qualified	294912 bit	3.15 V	IT CAN ALSO BE CONFIGURED AS 32K X 9; RETRANSMIT; ASYNCHRONOUS MODE IS ALSO POSSIBLE	e1	30	260	YES	.015 Amp	11 mm	5 ns
IDT72V243L39268BCGI	Renesas Electronics		INDUSTRIAL	100	LBGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2048 words	3.3		18	GRID ARRAY, LOW PROFILE				1 mm	85 Cel	2KX18	2K	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B100	3	3.45 V	1.5 mm		11 mm	Not Qualified	36864 bit	3.15 V	IT CAN ALSO BE CONFIGURED AS 4K X 9	e1			YES		11 mm	5 ns
72V283L7-5BCGI8	Renesas Electronics		INDUSTRIAL	100	LBGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		32768 words	3.3		18	GRID ARRAY, LOW PROFILE				1 mm	85 Cel	32KX18	32K	-40 Cel		BOTTOM	S-PBGA-B100		3.45 V	1.5 mm		11 mm		589824 bit	3.15 V	IT CAN ALSO BE CONFIGURED AS 64K X 9; RETRANSMIT; ASYNCHRONOUS MODE IS ALSO POSSIBLE		NOT SPECIFIED	NOT SPECIFIED	YES		11 mm	5 ns
IDT72V2113L7-5BCGI	Renesas Electronics	OTHER FIFO	INDUSTRIAL	100	LBGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	35 mA	262144 words	3.3	3.3	18	GRID ARRAY, LOW PROFILE	BGA100,10X10,40	9	FIFOs	1 mm	85 Cel	256KX18	256K	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	S-PBGA-B100	3	3.45 V	1.5 mm	133.3 MHz	11 mm	Not Qualified	4718592 bit	3.15 V	ALTERNATIVE MEMORY WIDTH 9; ASYNCHRONOUS MODE ALSO POSSIBLE	e1	30	260	YES	.015 Amp	11 mm	5 ns
72V233L7-5BCG	Renesas Electronics	OTHER FIFO	COMMERCIAL	100	LBGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	35 mA	1024 words	3.3	3.3	18	GRID ARRAY, LOW PROFILE	BGA100,10X10,40	9	FIFOs	1 mm	70 Cel	1KX18	1K	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	S-PBGA-B100	3	3.45 V	1.5 mm	133.3 MHz	11 mm	Not Qualified	18432 bit	3.15 V	IT CAN ALSO BE CONFIGURED AS 2K X 9; RETRANSMIT; ASYNCHRONOUS MODE IS ALSO POSSIBLE	e1	30	260	YES	.015 Amp	11 mm	5 ns

FIFO

FIFO, or First-In, First-Out, is a type of digital circuit that is used in computer systems and digital devices to manage the flow of data. A FIFO circuit stores data in a buffer and retrieves the data in the same order in which it was received, with the first data received being the first data to be retrieved.

FIFO circuits are used in many applications where data needs to be stored and retrieved in a specific order, such as in data communication systems, disk drives, and multimedia devices. For example, in a data communication system, a FIFO circuit can be used to store incoming data packets in a buffer and retrieve them in the order in which they were received, ensuring that the data is processed correctly and in a timely manner.

FIFO circuits are typically implemented using a combination of flip-flops, multiplexers, and control logic. The control logic manages the input and output of data to the FIFO buffer and ensures that the data is stored and retrieved in the correct order.

One of the advantages of using a FIFO circuit is that it provides a simple and efficient way to manage the flow of data. FIFO circuits are easy to implement and can handle large amounts of data. They can also be used in conjunction with other types of digital circuits to implement more complex data processing algorithms.