Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | Cycle Time | No. of Functions | Technology | Screening Level | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Output Characteristics | Organization | No. of Words Code | Minimum Operating Temperature | Terminal Finish | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
35 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
75 mA |
8192 words |
3.3 |
3.3 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
8KX9 |
8K |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQCC-J32 |
3 |
3.6 V |
3.55 mm |
28.5 MHz |
11.43 mm |
Not Qualified |
73728 bit |
3 V |
e3 |
30 |
260 |
NO |
.005 Amp |
13.97 mm |
25 ns |
||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
35 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
8192 words |
3.3 |
9 |
CHIP CARRIER |
1.27 mm |
85 Cel |
8KX9 |
8K |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQCC-J32 |
3 |
3.6 V |
3.55 mm |
11.43 mm |
Not Qualified |
73728 bit |
3 V |
e3 |
30 |
260 |
NO |
13.97 mm |
25 ns |
||||||||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
35 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
75 mA |
8192 words |
3.3 |
3.3 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
8KX9 |
8K |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQCC-J32 |
3 |
3.6 V |
3.55 mm |
28.5 MHz |
11.43 mm |
Not Qualified |
73728 bit |
3 V |
RETRANSMIT |
e3 |
30 |
260 |
NO |
.005 Amp |
13.97 mm |
25 ns |
|||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
35 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
8192 words |
3.3 |
9 |
CHIP CARRIER |
1.27 mm |
85 Cel |
8KX9 |
8K |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQCC-J32 |
3 |
3.6 V |
3.55 mm |
11.43 mm |
Not Qualified |
73728 bit |
3 V |
RETRANSMIT |
e3 |
30 |
260 |
NO |
13.97 mm |
25 ns |
|||||||||||
|
Cypress Semiconductor |
OTHER FIFO |
COMMERCIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
30 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
55 mA |
512 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
70 Cel |
512X9 |
512 |
0 Cel |
Matte Tin (Sn) |
QUAD |
R-PQCC-J32 |
3 |
5.5 V |
3.55 mm |
33.33 MHz |
11.43 mm |
Not Qualified |
4608 bit |
4.5 V |
RETRANSMIT |
e3 |
20 |
260 |
NO |
.005 Amp |
13.97 mm |
20 ns |
|||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
80 mA |
512 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
512X9 |
512 |
-40 Cel |
MATTE TIN |
QUAD |
R-PQCC-J32 |
3 |
5.5 V |
3.55 mm |
40 MHz |
11.43 mm |
Not Qualified |
4608 bit |
4.5 V |
RETRANSMIT |
e3 |
30 |
260 |
NO |
.005 Amp |
13.97 mm |
15 ns |
|||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
80 mA |
512 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
512X9 |
512 |
-40 Cel |
MATTE TIN |
QUAD |
R-PQCC-J32 |
3 |
5.5 V |
3.55 mm |
40 MHz |
11.43 mm |
Not Qualified |
4608 bit |
4.5 V |
RETRANSMIT |
e3 |
30 |
260 |
NO |
.005 Amp |
13.97 mm |
15 ns |
|||||
|
Renesas Electronics |
COMMERCIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
45 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
512 words |
5 |
9 |
CHIP CARRIER |
1.27 mm |
70 Cel |
3-STATE |
512X9 |
512 |
0 Cel |
Matte Tin (Sn) |
QUAD |
R-PQCC-J32 |
5.5 V |
3.55 mm |
11.43 mm |
Not Qualified |
4608 bit |
4.5 V |
RETRANSMIT |
e3 |
NO |
13.97 mm |
35 ns |
||||||||||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
80 mA |
1024 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
1KX9 |
1K |
-40 Cel |
MATTE TIN |
QUAD |
R-PQCC-J32 |
3 |
5.5 V |
3.55 mm |
40 MHz |
11.43 mm |
Not Qualified |
9216 bit |
4.5 V |
RETRANSMIT |
e3 |
30 |
260 |
NO |
.005 Amp |
13.97 mm |
15 ns |
|||||
|
Renesas Electronics |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
35 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
80 mA |
1024 words |
5 |
9 |
CHIP CARRIER |
1.27 mm |
85 Cel |
1KX9 |
1K |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQCC-J32 |
3 |
5.5 V |
3.55 mm |
11.43 mm |
Not Qualified |
9216 bit |
4.5 V |
RETRANSMIT |
e3 |
30 |
260 |
NO |
13.97 mm |
25 ns |
|||||||||||
|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
COMMERCIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
20 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
120 mA |
2048 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
70 Cel |
3-STATE |
2KX9 |
2K |
0 Cel |
MATTE TIN |
QUAD |
R-PQCC-J32 |
3 |
5.5 V |
3.556 mm |
50 MHz |
11.4554 mm |
Not Qualified |
18432 bit |
4.5 V |
e3 |
30 |
260 |
NO |
.012 Amp |
13.9954 mm |
12 ns |
|||||
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
120 mA |
2048 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
2KX9 |
2K |
-40 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
1 |
5.5 V |
3.556 mm |
40 MHz |
11.4554 mm |
Not Qualified |
18432 bit |
4.5 V |
RETRANSMIT |
e0 |
20 |
225 |
NO |
.012 Amp |
13.9954 mm |
15 ns |
||||||
|
Renesas Electronics |
OTHER FIFO |
COMMERCIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
20 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
120 mA |
2048 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
70 Cel |
3-STATE |
2KX9 |
2K |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQCC-J32 |
3 |
5.5 V |
3.55 mm |
50 MHz |
11.43 mm |
Not Qualified |
18432 bit |
4.5 V |
RETRANSMIT |
e3 |
30 |
260 |
NO |
.012 Amp |
13.97 mm |
12 ns |
||||
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
120 mA |
2048 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
2KX9 |
2K |
-40 Cel |
Tin/Lead (Sn85Pb15) |
QUAD |
R-PQCC-J32 |
1 |
5.5 V |
3.556 mm |
40 MHz |
11.4554 mm |
Not Qualified |
18432 bit |
4.5 V |
RETRANSMIT |
e0 |
20 |
225 |
NO |
.012 Amp |
13.9954 mm |
15 ns |
||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
80 mA |
1024 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
1KX9 |
1K |
-40 Cel |
MATTE TIN |
QUAD |
R-PQCC-J32 |
3 |
5.5 V |
3.55 mm |
40 MHz |
11.43 mm |
Not Qualified |
9216 bit |
4.5 V |
RETRANSMIT |
e3 |
30 |
260 |
NO |
.005 Amp |
13.97 mm |
15 ns |
|||||
|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
COMMERCIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
65 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
80 mA |
1024 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
70 Cel |
1KX9 |
1K |
0 Cel |
MATTE TIN |
QUAD |
R-PQCC-J32 |
3 |
5.5 V |
3.55 mm |
15 MHz |
11.43 mm |
Not Qualified |
9216 bit |
4.5 V |
RETRANSMIT |
e3 |
30 |
260 |
NO |
.005 Amp |
13.97 mm |
50 ns |
|||||
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
35 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
120 mA |
2048 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
2KX9 |
2K |
-40 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
1 |
5.5 V |
3.55 mm |
28.5 MHz |
11.43 mm |
Not Qualified |
18432 bit |
4.5 V |
RETRANSMIT |
e0 |
20 |
225 |
NO |
.002 Amp |
13.97 mm |
25 ns |
||||||
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
35 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
120 mA |
2048 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
2KX9 |
2K |
-40 Cel |
Tin/Lead (Sn85Pb15) |
QUAD |
R-PQCC-J32 |
1 |
5.5 V |
3.55 mm |
28.5 MHz |
11.43 mm |
Not Qualified |
18432 bit |
4.5 V |
RETRANSMIT |
e0 |
20 |
225 |
NO |
.002 Amp |
13.97 mm |
25 ns |
||||||
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
35 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
50 mA |
8192 words |
3.3 |
3.3 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
8KX9 |
8K |
-40 Cel |
Tin/Lead (Sn85Pb15) |
QUAD |
R-PQCC-J32 |
1 |
3.6 V |
3.556 mm |
28.5 MHz |
11.4554 mm |
Not Qualified |
73728 bit |
3 V |
e0 |
20 |
225 |
NO |
.005 Amp |
13.9954 mm |
25 ns |
|||||||
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
35 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
50 mA |
8192 words |
3.3 |
3.3 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
8KX9 |
8K |
-40 Cel |
Tin/Lead (Sn85Pb15) |
QUAD |
R-PQCC-J32 |
1 |
3.6 V |
3.556 mm |
28.5 MHz |
11.4554 mm |
Not Qualified |
73728 bit |
3 V |
e0 |
20 |
225 |
NO |
.005 Amp |
13.9954 mm |
25 ns |
|||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
35 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
80 mA |
1024 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
1KX9 |
1K |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQCC-J32 |
3 |
5.5 V |
3.55 mm |
28.5 MHz |
11.43 mm |
Not Qualified |
9216 bit |
4.5 V |
RETRANSMIT |
e3 |
30 |
260 |
NO |
.005 Amp |
13.97 mm |
25 ns |
|||||
|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
COMMERCIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
20 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
120 mA |
4096 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
70 Cel |
3-STATE |
4KX9 |
4K |
0 Cel |
MATTE TIN |
QUAD |
R-PQCC-J32 |
3 |
5.5 V |
3.556 mm |
50 MHz |
11.4554 mm |
Not Qualified |
36864 bit |
4.5 V |
e3 |
30 |
260 |
NO |
.012 Amp |
13.9954 mm |
12 ns |
|||||
|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
120 mA |
8192 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
3-STATE |
8KX9 |
8K |
-40 Cel |
MATTE TIN |
QUAD |
R-PQCC-J32 |
3 |
5.5 V |
3.556 mm |
40 MHz |
11.4554 mm |
Not Qualified |
73728 bit |
4.5 V |
e3 |
30 |
260 |
NO |
.012 Amp |
13.9954 mm |
15 ns |
|||||
|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
COMMERCIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
120 mA |
16384 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
70 Cel |
3-STATE |
16KX9 |
16K |
0 Cel |
MATTE TIN |
QUAD |
R-PQCC-J32 |
3 |
5.5 V |
3.556 mm |
40 MHz |
11.4554 mm |
Not Qualified |
147456 bit |
4.5 V |
e3 |
30 |
260 |
NO |
.012 Amp |
13.9954 mm |
15 ns |
|||||
Cypress Semiconductor |
OTHER FIFO |
COMMERCIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
10 ns |
1 |
CMOS |
J BEND |
PARALLEL |
SYNCHRONOUS |
150 mA |
256 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
70 Cel |
3-STATE |
256X9 |
256 |
0 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
5.5 V |
3.55 mm |
100 MHz |
11.43 mm |
Not Qualified |
2304 bit |
4.5 V |
e0 |
YES |
.03 Amp |
13.97 mm |
8 ns |
|||||||||
|
Renesas Electronics |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
1024 words |
5 |
9 |
CHIP CARRIER |
1.27 mm |
85 Cel |
1KX9 |
1K |
-40 Cel |
MATTE TIN |
QUAD |
R-PQCC-J32 |
5.5 V |
3.55 mm |
11.43 mm |
Not Qualified |
9216 bit |
4.5 V |
RETRANSMIT |
e3 |
NO |
13.97 mm |
15 ns |
|||||||||||||||
|
Renesas Electronics |
OTHER FIFO |
COMMERCIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
20 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
120 mA |
4096 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
70 Cel |
3-STATE |
4KX9 |
4K |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQCC-J32 |
3 |
5.5 V |
3.55 mm |
50 MHz |
11.43 mm |
Not Qualified |
36864 bit |
4.5 V |
RETRANSMIT |
e3 |
30 |
260 |
NO |
.012 Amp |
13.97 mm |
12 ns |
||||
|
Renesas Electronics |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
35 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
65536 words |
5 |
9 |
CHIP CARRIER |
1.27 mm |
85 Cel |
64KX9 |
64K |
-40 Cel |
MATTE TIN |
QUAD |
R-PQCC-J32 |
5.5 V |
3.55 mm |
11.43 mm |
Not Qualified |
589824 bit |
4.5 V |
e3 |
NO |
13.97 mm |
25 ns |
||||||||||||||||
|
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
ASYNCHRONOUS |
80 mA |
256 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
256X9 |
256 |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQCC-J32 |
1 |
40 MHz |
Not Qualified |
e3 |
30 |
260 |
.005 Amp |
15 ns |
||||||||||||||||
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
35 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
125 mA |
256 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
256X9 |
256 |
-40 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
1 |
5.5 V |
3.55 mm |
28.5 MHz |
11.43 mm |
Not Qualified |
2304 bit |
4.5 V |
RETRANSMIT |
e0 |
20 |
225 |
NO |
.0005 Amp |
13.97 mm |
25 ns |
||||||
|
Renesas Electronics |
OTHER FIFO |
COMMERCIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
20 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
80 mA |
512 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
70 Cel |
512X9 |
512 |
0 Cel |
MATTE TIN |
QUAD |
R-PQCC-J32 |
3 |
5.5 V |
3.55 mm |
50 MHz |
11.43 mm |
Not Qualified |
4608 bit |
4.5 V |
RETRANSMIT |
e3 |
30 |
260 |
NO |
.005 Amp |
13.97 mm |
12 ns |
|||||
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
80 mA |
512 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
512X9 |
512 |
-40 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
1 |
5.5 V |
3.55 mm |
40 MHz |
11.43 mm |
Not Qualified |
4608 bit |
4.5 V |
RETRANSMIT |
e0 |
20 |
225 |
NO |
.005 Amp |
13.97 mm |
15 ns |
||||||
|
Renesas Electronics |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
35 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
80 mA |
512 words |
5 |
9 |
CHIP CARRIER |
1.27 mm |
85 Cel |
512X9 |
512 |
-40 Cel |
Matte Tin (Sn) |
QUAD |
R-PQCC-J32 |
5.5 V |
3.55 mm |
11.43 mm |
Not Qualified |
4608 bit |
4.5 V |
RETRANSMIT |
e3 |
NO |
13.97 mm |
25 ns |
||||||||||||||
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
80 mA |
1024 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
1KX9 |
1K |
-40 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
1 |
5.5 V |
3.55 mm |
40 MHz |
11.43 mm |
Not Qualified |
9216 bit |
4.5 V |
RETRANSMIT |
e0 |
20 |
225 |
NO |
.005 Amp |
13.97 mm |
15 ns |
||||||
|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
COMMERCIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
65 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
80 mA |
1024 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
70 Cel |
1KX9 |
1K |
0 Cel |
MATTE TIN |
QUAD |
R-PQCC-J32 |
3 |
5.5 V |
3.55 mm |
15 MHz |
11.43 mm |
Not Qualified |
9216 bit |
4.5 V |
RETRANSMIT |
e3 |
30 |
260 |
NO |
.005 Amp |
13.97 mm |
50 ns |
|||||
|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
COMMERCIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
20 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
120 mA |
2048 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
70 Cel |
3-STATE |
2KX9 |
2K |
0 Cel |
MATTE TIN |
QUAD |
R-PQCC-J32 |
3 |
5.5 V |
3.556 mm |
50 MHz |
11.4554 mm |
Not Qualified |
18432 bit |
4.5 V |
e3 |
30 |
260 |
NO |
.012 Amp |
13.9954 mm |
12 ns |
|||||
Integrated Device Technology |
OTHER FIFO |
COMMERCIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
4096 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
70 Cel |
4KX9 |
4K |
0 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
1 |
5.5 V |
3.556 mm |
40 MHz |
11.4554 mm |
Not Qualified |
36864 bit |
4.5 V |
RETRANSMIT |
e0 |
20 |
225 |
NO |
.002 Amp |
13.9954 mm |
15 ns |
|||||||
|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
COMMERCIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
30 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
120 mA |
65536 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
70 Cel |
3-STATE |
64KX9 |
64K |
0 Cel |
MATTE TIN |
QUAD |
R-PQCC-J32 |
3 |
5.5 V |
3.556 mm |
33.3 MHz |
11.4554 mm |
Not Qualified |
589824 bit |
4.5 V |
e3 |
30 |
260 |
NO |
.012 Amp |
13.9954 mm |
20 ns |
|||||
|
Renesas Electronics |
OTHER FIFO |
COMMERCIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
8192 words |
3.3 |
9 |
CHIP CARRIER |
1.27 mm |
70 Cel |
8KX9 |
8K |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQCC-J32 |
3 |
3.6 V |
3.55 mm |
11.43 mm |
Not Qualified |
73728 bit |
3 V |
RETRANSMIT |
e3 |
30 |
260 |
NO |
13.97 mm |
15 ns |
|||||||||||
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
35 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
125 mA |
256 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
256X9 |
256 |
-40 Cel |
Tin/Lead (Sn85Pb15) |
QUAD |
R-PQCC-J32 |
1 |
5.5 V |
3.55 mm |
28.5 MHz |
11.43 mm |
Not Qualified |
2304 bit |
4.5 V |
RETRANSMIT |
e0 |
20 |
225 |
NO |
.0005 Amp |
13.97 mm |
25 ns |
||||||
|
Renesas Electronics |
COMMERCIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
20 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
512 words |
5 |
9 |
CHIP CARRIER |
1.27 mm |
70 Cel |
3-STATE |
512X9 |
512 |
0 Cel |
MATTE TIN |
QUAD |
R-PQCC-J32 |
5.5 V |
3.55 mm |
11.43 mm |
Not Qualified |
4608 bit |
4.5 V |
RETRANSMIT |
e3 |
NO |
13.97 mm |
12 ns |
||||||||||||||
|
Renesas Electronics |
OTHER FIFO |
COMMERCIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
20 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
120 mA |
2048 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
70 Cel |
3-STATE |
2KX9 |
2K |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQCC-J32 |
3 |
5.5 V |
3.556 mm |
50 MHz |
11.4554 mm |
Not Qualified |
18432 bit |
4.5 V |
RETRANSMIT |
e3 |
30 |
260 |
NO |
.012 Amp |
13.9954 mm |
12 ns |
||||
|
Renesas Electronics |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
35 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
65536 words |
5 |
9 |
CHIP CARRIER |
1.27 mm |
85 Cel |
64KX9 |
64K |
-40 Cel |
MATTE TIN |
QUAD |
R-PQCC-J32 |
5.5 V |
3.55 mm |
11.43 mm |
Not Qualified |
589824 bit |
4.5 V |
e3 |
NO |
13.97 mm |
25 ns |
||||||||||||||||
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
J BEND |
PARALLEL |
SYNCHRONOUS |
20 mA |
512 words |
3.3 |
3.3 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
512X9 |
512 |
-40 Cel |
Tin/Lead (Sn85Pb15) |
QUAD |
R-PQCC-J32 |
1 |
3.6 V |
3.55 mm |
66.7 MHz |
11.4554 mm |
Not Qualified |
4608 bit |
3 V |
e0 |
20 |
225 |
YES |
.005 Amp |
13.9954 mm |
10 ns |
|||||||
Integrated Device Technology |
OTHER FIFO |
COMMERCIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
35 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
125 mA |
1024 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
70 Cel |
1KX9 |
1K |
0 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
1 |
5.5 V |
3.55 mm |
28.5 MHz |
11.43 mm |
Not Qualified |
9216 bit |
4.5 V |
RETRANSMIT |
e0 |
20 |
225 |
NO |
.0005 Amp |
13.97 mm |
25 ns |
||||||
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
35 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
125 mA |
1024 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
1KX9 |
1K |
-40 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
1 |
5.5 V |
3.55 mm |
28.5 MHz |
11.43 mm |
Not Qualified |
9216 bit |
4.5 V |
RETRANSMIT |
e0 |
20 |
225 |
NO |
.0005 Amp |
13.97 mm |
25 ns |
||||||
Integrated Device Technology |
OTHER FIFO |
COMMERCIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
65 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
80 mA |
1024 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
70 Cel |
1KX9 |
1K |
0 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
1 |
5.5 V |
3.55 mm |
15 MHz |
11.43 mm |
Not Qualified |
9216 bit |
4.5 V |
RETRANSMIT |
e0 |
20 |
225 |
NO |
.0005 Amp |
13.97 mm |
50 ns |
||||||
Integrated Device Technology |
OTHER FIFO |
COMMERCIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
20 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
120 mA |
2048 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
70 Cel |
2KX9 |
2K |
0 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
1 |
5.5 V |
3.556 mm |
50 MHz |
11.4554 mm |
Not Qualified |
18432 bit |
4.5 V |
RETRANSMIT |
e0 |
20 |
225 |
NO |
.002 Amp |
13.9954 mm |
12 ns |
FIFO, or First-In, First-Out, is a type of digital circuit that is used in computer systems and digital devices to manage the flow of data. A FIFO circuit stores data in a buffer and retrieves the data in the same order in which it was received, with the first data received being the first data to be retrieved.
FIFO circuits are used in many applications where data needs to be stored and retrieved in a specific order, such as in data communication systems, disk drives, and multimedia devices. For example, in a data communication system, a FIFO circuit can be used to store incoming data packets in a buffer and retrieve them in the order in which they were received, ensuring that the data is processed correctly and in a timely manner.
FIFO circuits are typically implemented using a combination of flip-flops, multiplexers, and control logic. The control logic manages the input and output of data to the FIFO buffer and ensures that the data is stored and retrieved in the correct order.
One of the advantages of using a FIFO circuit is that it provides a simple and efficient way to manage the flow of data. FIFO circuits are easy to implement and can handle large amounts of data. They can also be used in conjunction with other types of digital circuits to implement more complex data processing algorithms.