Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | Cycle Time | No. of Functions | Technology | Screening Level | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Output Characteristics | Organization | No. of Words Code | Minimum Operating Temperature | Terminal Finish | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Renesas Electronics |
OTHER FIFO |
MILITARY |
28 |
DIP |
RECTANGULAR |
UNSPECIFIED |
NO |
40 ns |
1 |
CMOS |
38535Q/M;38534H;883B |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
140 mA |
512 words |
5 |
5 |
9 |
IN-LINE |
DIP28,.3 |
FIFOs |
2.54 mm |
125 Cel |
512X9 |
512 |
-55 Cel |
TIN LEAD |
DUAL |
R-XDIP-T28 |
1 |
5.5 V |
25 MHz |
Qualified |
4608 bit |
4.5 V |
e0 |
240 |
NO |
.025 Amp |
30 ns |
||||||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
35 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
75 mA |
8192 words |
3.3 |
3.3 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
8KX9 |
8K |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQCC-J32 |
3 |
3.6 V |
3.55 mm |
28.5 MHz |
11.43 mm |
Not Qualified |
73728 bit |
3 V |
e3 |
30 |
260 |
NO |
.005 Amp |
13.97 mm |
25 ns |
||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
35 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
8192 words |
3.3 |
9 |
CHIP CARRIER |
1.27 mm |
85 Cel |
8KX9 |
8K |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQCC-J32 |
3 |
3.6 V |
3.55 mm |
11.43 mm |
Not Qualified |
73728 bit |
3 V |
e3 |
30 |
260 |
NO |
13.97 mm |
25 ns |
||||||||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
35 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
75 mA |
8192 words |
3.3 |
3.3 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
8KX9 |
8K |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQCC-J32 |
3 |
3.6 V |
3.55 mm |
28.5 MHz |
11.43 mm |
Not Qualified |
73728 bit |
3 V |
RETRANSMIT |
e3 |
30 |
260 |
NO |
.005 Amp |
13.97 mm |
25 ns |
|||||
Texas Instruments |
OTHER FIFO |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
35 ns |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
125 mA |
512 words |
5 |
5 |
9 |
IN-LINE |
DIP28,.3 |
FIFOs |
2.54 mm |
70 Cel |
3-STATE |
512X9 |
512 |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T28 |
5.5 V |
4.57 mm |
28.5 MHz |
7.62 mm |
Not Qualified |
4608 bit |
4.5 V |
RETRANSMIT |
e0 |
NO |
.0005 Amp |
34.545 mm |
25 ns |
||||||||
Texas Instruments |
OTHER FIFO |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
35 ns |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
125 mA |
1024 words |
5 |
5 |
9 |
IN-LINE |
DIP28,.3 |
FIFOs |
2.54 mm |
70 Cel |
1KX9 |
1K |
0 Cel |
DUAL |
R-PDIP-T28 |
5.5 V |
4.57 mm |
28.5 MHz |
7.62 mm |
Not Qualified |
9216 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
NO |
.0005 Amp |
34.545 mm |
25 ns |
||||||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
35 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
8192 words |
3.3 |
9 |
CHIP CARRIER |
1.27 mm |
85 Cel |
8KX9 |
8K |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQCC-J32 |
3 |
3.6 V |
3.55 mm |
11.43 mm |
Not Qualified |
73728 bit |
3 V |
RETRANSMIT |
e3 |
30 |
260 |
NO |
13.97 mm |
25 ns |
|||||||||||
|
Texas Instruments |
OTHER FIFO |
MILITARY |
16 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
500 ns |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
SYNCHRONOUS |
16 words |
4.5 |
2/6 |
4 |
IN-LINE |
DIP16,.3 |
FIFOs |
2.54 mm |
125 Cel |
3-STATE |
16X4 |
16 |
-55 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDIP-T16 |
6 V |
5.08 mm |
10 MHz |
7.62 mm |
Not Qualified |
64 bit |
2 V |
e4 |
YES |
19.305 mm |
2250 ns |
||||||||||
|
Renesas Electronics |
INDUSTRIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
80 mA |
512 words |
5 |
9 |
SMALL OUTLINE |
1.27 mm |
85 Cel |
512X9 |
512 |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G28 |
3 |
5.5 V |
3.048 mm |
8.763 mm |
Not Qualified |
4608 bit |
4.5 V |
RETRANSMIT |
e3 |
260 |
NO |
18.3642 mm |
15 ns |
||||||||||||
|
Texas Instruments |
OTHER FIFO |
MILITARY |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
100 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
16 words |
5 |
5 |
4 |
SMALL OUTLINE |
SOP16,.25 |
FIFOs |
1.27 mm |
125 Cel |
3-STATE |
16X4 |
16 |
-55 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G16 |
1 |
5.5 V |
1.75 mm |
10 MHz |
3.9 mm |
Not Qualified |
64 bit |
4.5 V |
e4 |
30 |
260 |
YES |
9.9 mm |
2250 ns |
|||||||
|
Texas Instruments |
OTHER FIFO |
MILITARY |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
500 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
16 words |
4.5 |
2/6 |
4 |
SMALL OUTLINE |
SOP16,.25 |
FIFOs |
1.27 mm |
125 Cel |
3-STATE |
16X4 |
16 |
-55 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G16 |
1 |
6 V |
1.75 mm |
10 MHz |
3.9 mm |
Not Qualified |
64 bit |
2 V |
e4 |
30 |
260 |
YES |
9.9 mm |
2250 ns |
|||||||
|
Cypress Semiconductor |
OTHER FIFO |
COMMERCIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
30 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
55 mA |
512 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
70 Cel |
512X9 |
512 |
0 Cel |
Matte Tin (Sn) |
QUAD |
R-PQCC-J32 |
3 |
5.5 V |
3.55 mm |
33.33 MHz |
11.43 mm |
Not Qualified |
4608 bit |
4.5 V |
RETRANSMIT |
e3 |
20 |
260 |
NO |
.005 Amp |
13.97 mm |
20 ns |
|||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
80 mA |
512 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
512X9 |
512 |
-40 Cel |
MATTE TIN |
QUAD |
R-PQCC-J32 |
3 |
5.5 V |
3.55 mm |
40 MHz |
11.43 mm |
Not Qualified |
4608 bit |
4.5 V |
RETRANSMIT |
e3 |
30 |
260 |
NO |
.005 Amp |
13.97 mm |
15 ns |
|||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
80 mA |
512 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
512X9 |
512 |
-40 Cel |
MATTE TIN |
QUAD |
R-PQCC-J32 |
3 |
5.5 V |
3.55 mm |
40 MHz |
11.43 mm |
Not Qualified |
4608 bit |
4.5 V |
RETRANSMIT |
e3 |
30 |
260 |
NO |
.005 Amp |
13.97 mm |
15 ns |
|||||
|
Renesas Electronics |
COMMERCIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
45 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
512 words |
5 |
9 |
CHIP CARRIER |
1.27 mm |
70 Cel |
3-STATE |
512X9 |
512 |
0 Cel |
Matte Tin (Sn) |
QUAD |
R-PQCC-J32 |
5.5 V |
3.55 mm |
11.43 mm |
Not Qualified |
4608 bit |
4.5 V |
RETRANSMIT |
e3 |
NO |
13.97 mm |
35 ns |
||||||||||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
80 mA |
1024 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
1KX9 |
1K |
-40 Cel |
MATTE TIN |
QUAD |
R-PQCC-J32 |
3 |
5.5 V |
3.55 mm |
40 MHz |
11.43 mm |
Not Qualified |
9216 bit |
4.5 V |
RETRANSMIT |
e3 |
30 |
260 |
NO |
.005 Amp |
13.97 mm |
15 ns |
|||||
|
Renesas Electronics |
OTHER FIFO |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
20 ns |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
80 mA |
1024 words |
5 |
5 |
9 |
IN-LINE |
DIP28,.6 |
FIFOs |
2.54 mm |
70 Cel |
1KX9 |
1K |
0 Cel |
Matte Tin (Sn) - annealed |
DUAL |
R-PDIP-T28 |
1 |
5.5 V |
4.699 mm |
50 MHz |
15.24 mm |
Not Qualified |
9216 bit |
4.5 V |
RETRANSMIT |
e3 |
30 |
260 |
NO |
.005 Amp |
36.576 mm |
12 ns |
|||||
|
NXP Semiconductors |
OTHER FIFO |
AUTOMOTIVE |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
71.428 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
16 words |
4.5 |
2/6 |
4 |
SMALL OUTLINE |
SOP16,.25 |
FIFOs |
1.27 mm |
125 Cel |
3-STATE |
16X4 |
16 |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDSO-G16 |
1 |
6 V |
1.75 mm |
14 MHz |
3.9 mm |
Not Qualified |
64 bit |
2 V |
REGISTER BASED; BUBBLE BACK 750NS |
e4 |
30 |
260 |
YES |
9.9 mm |
600 ns |
||||||
|
Texas Instruments |
OTHER FIFO |
MILITARY |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
500 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
.16 mA |
16 words |
4.5 |
2/6 |
4 |
SMALL OUTLINE |
SOP16,.25 |
FIFOs |
1.27 mm |
125 Cel |
16X4 |
16 |
-55 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G16 |
1 |
6 V |
1.75 mm |
12 MHz |
3.9 mm |
Not Qualified |
64 bit |
2 V |
e4 |
30 |
260 |
YES |
9.9 mm |
2250 ns |
|||||||
Integrated Device Technology |
OTHER FIFO |
COMMERCIAL |
56 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
30 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
125 mA |
512 words |
5 |
5 |
9 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP56,.3,20 |
FIFOs |
.5 mm |
70 Cel |
3-STATE |
512X9 |
512 |
0 Cel |
Tin/Lead (Sn85Pb15) |
DUAL |
R-PDSO-G56 |
1 |
5.5 V |
1.1 mm |
33.3 MHz |
6.1 mm |
Not Qualified |
4608 bit |
4.5 V |
RETRANSMIT |
e0 |
20 |
240 |
NO |
14 mm |
20 ns |
||||||
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
56 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
2 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
125 mA |
1024 words |
5 |
5 |
9 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP56,.3,20 |
FIFOs |
.5 mm |
85 Cel |
1KX9 |
1K |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G56 |
1 |
5.5 V |
1.2 mm |
40 MHz |
6.1 mm |
Not Qualified |
9216 bit |
4.5 V |
RETRANSMIT |
e0 |
20 |
240 |
NO |
.015 Amp |
14 mm |
15 ns |
||||||
|
Texas Instruments |
OTHER FIFO |
MILITARY |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
500 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
16 words |
4.5 |
2/6 |
4 |
SMALL OUTLINE |
SOP16,.25 |
FIFOs |
1.27 mm |
125 Cel |
3-STATE |
16X4 |
16 |
-55 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G16 |
1 |
6 V |
1.75 mm |
10 MHz |
3.9 mm |
Not Qualified |
64 bit |
2 V |
e4 |
30 |
260 |
YES |
9.9 mm |
2250 ns |
|||||||
|
Texas Instruments |
OTHER FIFO |
MILITARY |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
500 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
.16 mA |
16 words |
4.5 |
2/6 |
4 |
SMALL OUTLINE |
SOP16,.25 |
FIFOs |
1.27 mm |
125 Cel |
16X4 |
16 |
-55 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G16 |
1 |
6 V |
1.75 mm |
10 MHz |
3.9 mm |
Not Qualified |
64 bit |
2 V |
e4 |
30 |
260 |
YES |
9.9 mm |
2250 ns |
|||||||
Integrated Device Technology |
OTHER FIFO |
COMMERCIAL |
56 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
2 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
125 mA |
256 words |
5 |
5 |
9 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP56,.3,20 |
FIFOs |
.5 mm |
70 Cel |
3-STATE |
256X9 |
256 |
0 Cel |
Tin/Lead (Sn85Pb15) |
DUAL |
R-PDSO-G56 |
1 |
5.5 V |
1.2 mm |
40 MHz |
6.1 mm |
Not Qualified |
2304 bit |
4.5 V |
RETRANSMIT |
e0 |
20 |
240 |
NO |
14 mm |
15 ns |
||||||
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
56 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
2 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
125 mA |
1024 words |
5 |
5 |
9 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP56,.3,20 |
FIFOs |
.5 mm |
85 Cel |
1KX9 |
1K |
-40 Cel |
Tin/Lead (Sn85Pb15) |
DUAL |
R-PDSO-G56 |
1 |
5.5 V |
1.2 mm |
40 MHz |
6.1 mm |
Not Qualified |
9216 bit |
4.5 V |
RETRANSMIT |
e0 |
20 |
240 |
NO |
.015 Amp |
14 mm |
15 ns |
||||||
|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
INDUSTRIAL |
56 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
1024 words |
3.3 |
9 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
.5 mm |
85 Cel |
1KX9 |
1K |
-40 Cel |
Matte Tin (Sn) |
DUAL |
R-PDSO-G56 |
3.6 V |
1.2 mm |
6.1 mm |
9216 bit |
3 V |
RETRANSMIT |
e3 |
40 |
260 |
NO |
14 mm |
20 ns |
||||||||||||||
|
NXP Semiconductors |
OTHER FIFO |
AUTOMOTIVE |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
71.428 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
16 words |
4.5 |
2/6 |
4 |
SMALL OUTLINE |
SOP16,.25 |
FIFOs |
1.27 mm |
125 Cel |
3-STATE |
16X4 |
16 |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDSO-G16 |
1 |
6 V |
1.75 mm |
14 MHz |
3.9 mm |
Not Qualified |
64 bit |
2 V |
REGISTER BASED; BUBBLE BACK 750NS |
e4 |
30 |
260 |
YES |
9.9 mm |
600 ns |
||||||
|
NXP Semiconductors |
OTHER FIFO |
AUTOMOTIVE |
16 |
SSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
71.428 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
16 words |
4.5 |
2/6 |
4 |
SMALL OUTLINE, SHRINK PITCH |
SSOP16,.3 |
FIFOs |
.65 mm |
125 Cel |
16X4 |
16 |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDSO-G16 |
1 |
6 V |
2 mm |
33 MHz |
5.3 mm |
Not Qualified |
64 bit |
2 V |
e4 |
30 |
260 |
YES |
6.2 mm |
600 ns |
||||||||
|
NXP Semiconductors |
OTHER FIFO |
AUTOMOTIVE |
16 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
71.428 ns |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
16 words |
4.5 |
2/6 |
4 |
IN-LINE |
DIP16,.3 |
FIFOs |
2.54 mm |
125 Cel |
3-STATE |
16X4 |
16 |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDIP-T16 |
6 V |
4.7 mm |
14 MHz |
7.62 mm |
Not Qualified |
64 bit |
2 V |
REGISTER BASED; BUBBLE BACK 750NS |
e4 |
YES |
21.6 mm |
600 ns |
|||||||||
|
NXP Semiconductors |
OTHER FIFO |
AUTOMOTIVE |
16 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
71.428 ns |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
16 words |
4.5 |
2/6 |
4 |
IN-LINE |
DIP16,.3 |
FIFOs |
2.54 mm |
125 Cel |
3-STATE |
16X4 |
16 |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDIP-T16 |
6 V |
4.7 mm |
14 MHz |
7.62 mm |
Not Qualified |
64 bit |
2 V |
REGISTER BASED; BUBBLE BACK 750NS |
e4 |
30 |
260 |
YES |
21.6 mm |
600 ns |
|||||||
|
NXP Semiconductors |
OTHER FIFO |
AUTOMOTIVE |
16 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
71.428 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
16 words |
4.5 |
2/6 |
4 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP16,.25 |
FIFOs |
.65 mm |
125 Cel |
16X4 |
16 |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDSO-G16 |
1 |
6 V |
1.1 mm |
33 MHz |
4.4 mm |
Not Qualified |
64 bit |
2 V |
e4 |
30 |
260 |
YES |
5 mm |
600 ns |
||||||||
|
NXP Semiconductors |
AUTOMOTIVE |
16 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
71.428 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
16 words |
4.5 |
4 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
.65 mm |
125 Cel |
16X4 |
16 |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDSO-G16 |
1 |
6 V |
1.1 mm |
4.4 mm |
Not Qualified |
64 bit |
2 V |
e4 |
30 |
260 |
YES |
5 mm |
600 ns |
|||||||||||||
|
Texas Instruments |
OTHER FIFO |
MILITARY |
16 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
500 ns |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
SYNCHRONOUS |
16 words |
4.5 |
2/6 |
4 |
IN-LINE |
DIP16,.3 |
FIFOs |
2.54 mm |
125 Cel |
16X4 |
16 |
-55 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDIP-T16 |
6 V |
5.08 mm |
10 MHz |
7.62 mm |
Not Qualified |
64 bit |
2 V |
e4 |
YES |
19.305 mm |
2250 ns |
|||||||||||
|
Texas Instruments |
OTHER FIFO |
MILITARY |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
500 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
16 words |
4.5 |
2/6 |
4 |
SMALL OUTLINE |
SOP16,.25 |
FIFOs |
1.27 mm |
125 Cel |
3-STATE |
16X4 |
16 |
-55 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDSO-G16 |
1 |
6 V |
1.75 mm |
10 MHz |
3.9 mm |
Not Qualified |
64 bit |
2 V |
e4 |
NOT SPECIFIED |
260 |
YES |
9.9 mm |
2250 ns |
|||||||
|
Texas Instruments |
OTHER FIFO |
MILITARY |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
500 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
.16 mA |
16 words |
4.5 |
2/6 |
4 |
SMALL OUTLINE |
SOP16,.25 |
FIFOs |
1.27 mm |
125 Cel |
16X4 |
16 |
-55 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G16 |
1 |
6 V |
1.75 mm |
12 MHz |
3.9 mm |
Not Qualified |
64 bit |
2 V |
e4 |
30 |
260 |
YES |
9.9 mm |
2250 ns |
|||||||
|
Texas Instruments |
OTHER FIFO |
MILITARY |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
500 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
16 words |
4.5 |
2/6 |
4 |
SMALL OUTLINE |
SOP16,.25 |
FIFOs |
1.27 mm |
125 Cel |
3-STATE |
16X4 |
16 |
-55 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDSO-G16 |
1 |
6 V |
1.75 mm |
10 MHz |
3.9 mm |
Not Qualified |
64 bit |
2 V |
e4 |
NOT SPECIFIED |
260 |
YES |
9.9 mm |
2250 ns |
|||||||
|
Nte Electronics |
OTHER FIFO |
INDUSTRIAL |
16 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
SYNCHRONOUS |
50 mA |
16 words |
4.5 |
4 |
IN-LINE |
DIP16,.3 |
2.54 mm |
85 Cel |
3-STATE |
16X4 |
16 |
-40 Cel |
DUAL |
R-PDIP-T16 |
6 V |
5.08 mm |
7.62 mm |
64 bit |
2 V |
NOT SPECIFIED |
NOT SPECIFIED |
YES |
22 mm |
|||||||||||||||
|
Renesas Electronics |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
35 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
80 mA |
1024 words |
5 |
9 |
CHIP CARRIER |
1.27 mm |
85 Cel |
1KX9 |
1K |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQCC-J32 |
3 |
5.5 V |
3.55 mm |
11.43 mm |
Not Qualified |
9216 bit |
4.5 V |
RETRANSMIT |
e3 |
30 |
260 |
NO |
13.97 mm |
25 ns |
|||||||||||
|
Renesas Electronics |
OTHER FIFO |
COMMERCIAL |
32 |
QCCN |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
60 mA |
1024 words |
3.3 |
9 |
CHIP CARRIER |
LCC32,.45X.55 |
1.27 mm |
70 Cel |
3-STATE |
1KX9 |
1K |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQCC-N32 |
3 |
3.6 V |
2.79 mm |
11.43 mm |
9216 bit |
3 V |
e3 |
30 |
260 |
NO |
.005 Amp |
13.97 mm |
15 ns |
|||||||||
Defense Logistics Agency |
MILITARY |
16 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
100 ns |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
64 words |
5 |
4 |
IN-LINE |
2.54 mm |
125 Cel |
64X4 |
64 |
-55 Cel |
TIN LEAD |
DUAL |
R-GDIP-T16 |
5.5 V |
5.08 mm |
7.62 mm |
Not Qualified |
256 bit |
4.5 V |
e0 |
NO |
19.43 mm |
55 ns |
|||||||||||||||||
|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
COMMERCIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
20 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
120 mA |
2048 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
70 Cel |
3-STATE |
2KX9 |
2K |
0 Cel |
MATTE TIN |
QUAD |
R-PQCC-J32 |
3 |
5.5 V |
3.556 mm |
50 MHz |
11.4554 mm |
Not Qualified |
18432 bit |
4.5 V |
e3 |
30 |
260 |
NO |
.012 Amp |
13.9954 mm |
12 ns |
|||||
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
120 mA |
2048 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
2KX9 |
2K |
-40 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
1 |
5.5 V |
3.556 mm |
40 MHz |
11.4554 mm |
Not Qualified |
18432 bit |
4.5 V |
RETRANSMIT |
e0 |
20 |
225 |
NO |
.012 Amp |
13.9954 mm |
15 ns |
||||||
|
NXP Semiconductors |
OTHER FIFO |
AUTOMOTIVE |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
83.33 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
1 mA |
64 words |
5 |
2/6 |
4 |
SMALL OUTLINE |
SOP16,.4 |
FIFOs |
1.27 mm |
125 Cel |
3-STATE |
64X4 |
64 |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G16 |
1 |
6 V |
2.65 mm |
12 MHz |
7.5 mm |
Not Qualified |
256 bit |
2 V |
REGISTER BASED; BUBBLE BACK 2.7US |
e4 |
YES |
10.3 mm |
98 ns |
|||||||
|
Renesas Electronics |
OTHER FIFO |
COMMERCIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
20 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
120 mA |
2048 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
70 Cel |
3-STATE |
2KX9 |
2K |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQCC-J32 |
3 |
5.5 V |
3.55 mm |
50 MHz |
11.43 mm |
Not Qualified |
18432 bit |
4.5 V |
RETRANSMIT |
e3 |
30 |
260 |
NO |
.012 Amp |
13.97 mm |
12 ns |
||||
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
120 mA |
2048 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
2KX9 |
2K |
-40 Cel |
Tin/Lead (Sn85Pb15) |
QUAD |
R-PQCC-J32 |
1 |
5.5 V |
3.556 mm |
40 MHz |
11.4554 mm |
Not Qualified |
18432 bit |
4.5 V |
RETRANSMIT |
e0 |
20 |
225 |
NO |
.012 Amp |
13.9954 mm |
15 ns |
||||||
|
Texas Instruments |
OTHER FIFO |
COMMERCIAL |
56 |
SSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
40 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
512 words |
3.3 |
3.3 |
18 |
SMALL OUTLINE, SHRINK PITCH |
SSOP56,.4 |
FIFOs |
.635 mm |
70 Cel |
3-STATE |
512X18 |
512 |
0 Cel |
DUAL |
R-PDSO-G56 |
3.6 V |
2.79 mm |
25 MHz |
7.5 mm |
Not Qualified |
9216 bit |
3.3 V |
NOT SPECIFIED |
NOT SPECIFIED |
YES |
18.415 mm |
20 ns |
||||||||||
|
Texas Instruments |
OTHER FIFO |
COMMERCIAL |
128 |
LFQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
6 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
40 mA |
32768 words |
3.3 |
3.3 |
36 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP128,.63X.87,20 |
18 |
FIFOs |
.5 mm |
70 Cel |
3-STATE |
32KX36 |
32K |
0 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
R-PQFP-G128 |
3 |
3.45 V |
1.6 mm |
1 MHz |
14 mm |
Not Qualified |
1179648 bit |
3.15 V |
e4 |
20 |
220 |
YES |
20 mm |
4.5 ns |
|||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
80 mA |
1024 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
1KX9 |
1K |
-40 Cel |
MATTE TIN |
QUAD |
R-PQCC-J32 |
3 |
5.5 V |
3.55 mm |
40 MHz |
11.43 mm |
Not Qualified |
9216 bit |
4.5 V |
RETRANSMIT |
e3 |
30 |
260 |
NO |
.005 Amp |
13.97 mm |
15 ns |
FIFO, or First-In, First-Out, is a type of digital circuit that is used in computer systems and digital devices to manage the flow of data. A FIFO circuit stores data in a buffer and retrieves the data in the same order in which it was received, with the first data received being the first data to be retrieved.
FIFO circuits are used in many applications where data needs to be stored and retrieved in a specific order, such as in data communication systems, disk drives, and multimedia devices. For example, in a data communication system, a FIFO circuit can be used to store incoming data packets in a buffer and retrieve them in the order in which they were received, ensuring that the data is processed correctly and in a timely manner.
FIFO circuits are typically implemented using a combination of flip-flops, multiplexers, and control logic. The control logic manages the input and output of data to the FIFO buffer and ensures that the data is stored and retrieved in the correct order.
One of the advantages of using a FIFO circuit is that it provides a simple and efficient way to manage the flow of data. FIFO circuits are easy to implement and can handle large amounts of data. They can also be used in conjunction with other types of digital circuits to implement more complex data processing algorithms.