Samsung FIFO 222

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	Cycle Time	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Output Enable	Maximum Standby Current	Length	Maximum Access Time
KM75C04AP-50	Samsung		COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	25 ns	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words			9	IN-LINE			2.54 mm	70 Cel		4KX9	4K	0 Cel		DUAL	R-PDIP-T28			5.08 mm		15.24 mm	Not Qualified	36864 bit		RETRANSMIT		NO		37.1 mm	50 ns
KM75C04AJ-20	Samsung		COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	25 ns	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		4096 words			9	CHIP CARRIER			1.27 mm	70 Cel		4KX9	4K	0 Cel		QUAD	R-PQCC-J32			3.55 mm		11.43 mm	Not Qualified	36864 bit		RETRANSMIT		NO		13.97 mm	20 ns
KM75C103AJI-20	Samsung	OTHER FIFO	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES			CMOS	J BEND		ASYNCHRONOUS	60 mA	2048 words	5	5	9	CHIP CARRIER	LDCC32,.5X.6	FIFOs	1.27 mm	85 Cel		2KX9	2K	-40 Cel	TIN LEAD	QUAD	R-PQCC-J32	3			40 MHz		Not Qualified	18432 bit			e0		.005 Amp		20 ns
KM75C101AJ-80	Samsung	OTHER FIFO	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES			CMOS	J BEND		ASYNCHRONOUS		512 words	5	5	9	CHIP CARRIER	LDCC32,.5X.6	FIFOs	1.27 mm	70 Cel		512X9	512	0 Cel	TIN LEAD	QUAD	R-PQCC-J32	3					Not Qualified				e0		.005 Amp		80 ns
KM75C02AN-12	Samsung	OTHER FIFO	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	20 ns	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	5	5	9	IN-LINE	DIP28,.3	FIFOs	2.54 mm	70 Cel	3-STATE	1KX9	1K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28		5.5 V	4.318 mm	50 MHz	7.62 mm	Not Qualified	9216 bit	4.5 V	RETRANSMIT	e0	NO		34.29 mm	12 ns
KM75C02AS-50	Samsung		COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	65 ns	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	5		9	IN-LINE				70 Cel	3-STATE	1KX9	1K	0 Cel		DUAL	R-PDIP-T28		5.5 V				Not Qualified	9216 bit	4.5 V	RETRANSMIT		NO			50 ns
KM75C104AJ-20	Samsung	OTHER FIFO	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	30 ns	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	120 mA	4096 words	5	5	9	CHIP CARRIER	LDCC32,.5X.6	FIFOs	1.27 mm	70 Cel	3-STATE	4KX9	4K	0 Cel	TIN LEAD	QUAD	R-PQCC-J32			3.55 mm	33.3 MHz	11.43 mm	Not Qualified	36864 bit		RETRANSMIT	e0	NO	.005 Amp	13.97 mm	20 ns
KM75C03AJI-35	Samsung	OTHER FIFO	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES			CMOS	J BEND		ASYNCHRONOUS	60 mA	2048 words	5	5	9	CHIP CARRIER	LDCC32,.5X.6	FIFOs	1.27 mm	85 Cel		2KX9	2K	-40 Cel	TIN LEAD	QUAD	R-PQCC-J32	3			22 MHz		Not Qualified	18432 bit			e0		.005 Amp		35 ns
KM75C02AJ-50	Samsung	OTHER FIFO	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	65 ns	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	60 mA	1024 words	5	5	9	CHIP CARRIER	LDCC32,.5X.6	FIFOs	1.27 mm	70 Cel	3-STATE	1KX9	1K	0 Cel	TIN LEAD	QUAD	R-PQCC-J32		5.5 V	3.55 mm	15 MHz	11.43 mm	Not Qualified	9216 bit	4.5 V	RETRANSMIT	e0	NO	.005 Amp	13.97 mm	50 ns
KM75C104API-25	Samsung	OTHER FIFO	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO			CMOS	THROUGH-HOLE		ASYNCHRONOUS	120 mA	4096 words	5	5	9	IN-LINE	DIP28,.6	FIFOs	2.54 mm	85 Cel		4KX9	4K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T28	3			28.6 MHz		Not Qualified	36864 bit			e0		.005 Amp		25 ns
KM75C01AS-15	Samsung		COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	25 ns	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		512 words	5		9	IN-LINE				70 Cel	3-STATE	512X9	512	0 Cel		DUAL	R-PDIP-T28		5.5 V				Not Qualified	4608 bit	4.5 V	RETRANSMIT		NO			15 ns
KM75C03AJI-80	Samsung	OTHER FIFO	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES			CMOS	J BEND		ASYNCHRONOUS	60 mA	2048 words	5	5	9	CHIP CARRIER	LDCC32,.5X.6	FIFOs	1.27 mm	85 Cel		2KX9	2K	-40 Cel	TIN LEAD	QUAD	R-PQCC-J32	3			10 MHz		Not Qualified	18432 bit			e0		.005 Amp		80 ns
KM75C101AN-35	Samsung	OTHER FIFO	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	45 ns	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	512 words	5	5	9	IN-LINE	DIP28,.3	FIFOs	2.54 mm	70 Cel	3-STATE	512X9	512	0 Cel	TIN LEAD	DUAL	R-PDIP-T28		5.5 V	4.318 mm	22 MHz	7.62 mm	Not Qualified	4608 bit	4.5 V	RETRANSMIT	e0	NO	.005 Amp	34.29 mm	35 ns
KM75C103AN-80	Samsung	OTHER FIFO	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO			CMOS	THROUGH-HOLE		ASYNCHRONOUS	60 mA	2048 words	5	5	9	IN-LINE	DIP28,.3	FIFOs	2.54 mm	70 Cel		2KX9	2K	0 Cel	TIN LEAD	DUAL	R-PDIP-T28	3					Not Qualified	18432 bit			e0		.005 Amp		80 ns
KM75C03AS-25	Samsung		COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	35 ns	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words	5		9	IN-LINE				70 Cel	3-STATE	2KX9	2K	0 Cel		DUAL	R-PDIP-T28		5.5 V				Not Qualified	18432 bit	4.5 V	RETRANSMIT		NO			25 ns
KM75C03API-80	Samsung	OTHER FIFO	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO			CMOS	THROUGH-HOLE		ASYNCHRONOUS	60 mA	2048 words	5	5	9	IN-LINE	DIP28,.6	FIFOs	2.54 mm	85 Cel		2KX9	2K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T28	3			10 MHz		Not Qualified	18432 bit			e0		.005 Amp		80 ns
KM75C02AN-20	Samsung	OTHER FIFO	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	30 ns	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	1024 words	5	5	9	IN-LINE	DIP28,.3	FIFOs	2.54 mm	70 Cel	3-STATE	1KX9	1K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28		5.5 V	4.318 mm	33.33 MHz	7.62 mm	Not Qualified	9216 bit	4.5 V	RETRANSMIT	e0	NO	.005 Amp	34.29 mm	20 ns
KM75C04AN	Samsung
KM75C103ANI-80	Samsung	OTHER FIFO	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO			CMOS	THROUGH-HOLE		ASYNCHRONOUS	60 mA	2048 words	5	5	9	IN-LINE	DIP28,.3	FIFOs	2.54 mm	85 Cel		2KX9	2K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T28	3					Not Qualified	18432 bit			e0		.005 Amp		80 ns
KM75C101AP50	Samsung
KM75C101AP-25	Samsung	OTHER FIFO	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	35 ns	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	512 words	5	5	9	IN-LINE	DIP28,.6	FIFOs	2.54 mm	70 Cel	3-STATE	512X9	512	0 Cel	TIN LEAD	DUAL	R-PDIP-T28		5.5 V	5.08 mm	28 MHz	15.24 mm	Not Qualified	4608 bit	4.5 V	RETRANSMIT	e0	NO	.005 Amp	37.1 mm	25 ns
KM75C02AP-120	Samsung	OTHER FIFO	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO			CMOS	THROUGH-HOLE		ASYNCHRONOUS	60 mA	1024 words	5	5	9	IN-LINE	DIP28,.6	FIFOs	2.54 mm	70 Cel		1KX9	1K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28						Not Qualified	9216 bit			e0				120 ns
KM75C101ANI-80	Samsung	OTHER FIFO	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO			CMOS	THROUGH-HOLE		ASYNCHRONOUS		512 words	5	5	9	IN-LINE	DIP28,.3	FIFOs	2.54 mm	85 Cel		512X9	512	-40 Cel	TIN LEAD	DUAL	R-PDIP-T28	3					Not Qualified				e0		.005 Amp		80 ns
KM75C101AP-20	Samsung	OTHER FIFO	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	30 ns	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	512 words	5	5	9	IN-LINE	DIP28,.6	FIFOs	2.54 mm	70 Cel	3-STATE	512X9	512	0 Cel	TIN LEAD	DUAL	R-PDIP-T28		5.5 V	5.08 mm	33 MHz	15.24 mm	Not Qualified	4608 bit	4.5 V	RETRANSMIT	e0	NO	.005 Amp	37.1 mm	20 ns
KM75C103AN-35	Samsung	OTHER FIFO	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	45 ns	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	2048 words	5	5	9	IN-LINE	DIP28,.3	FIFOs	2.54 mm	70 Cel	3-STATE	2KX9	2K	0 Cel	TIN LEAD	DUAL	R-PDIP-T28		5.5 V	4.318 mm	22 MHz	7.62 mm	Not Qualified	18432 bit	4.5 V	RETRANSMIT	e0	NO	.005 Amp	34.29 mm	35 ns
KM75C101API-35	Samsung	OTHER FIFO	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO			CMOS	THROUGH-HOLE		ASYNCHRONOUS	100 mA	512 words	5	5	9	IN-LINE	DIP28,.6	FIFOs	2.54 mm	85 Cel		512X9	512	-40 Cel	TIN LEAD	DUAL	R-PDIP-T28	3			22 MHz		Not Qualified				e0		.005 Amp		35 ns
KM75C03AJ-20	Samsung	OTHER FIFO	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	30 ns	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	150 mA	2048 words	5	5	9	CHIP CARRIER	LDCC32,.5X.6	FIFOs	1.27 mm	70 Cel	3-STATE	2KX9	2K	0 Cel	TIN LEAD	QUAD	R-PQCC-J32		5.5 V	3.55 mm	33 MHz	11.43 mm	Not Qualified	18432 bit	4.5 V	RETRANSMIT	e0	NO	.005 Amp	13.97 mm	20 ns
KM75C102AN-35	Samsung	OTHER FIFO	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	45 ns	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	1024 words	5	5	9	IN-LINE	DIP28,.3	FIFOs	2.54 mm	70 Cel	3-STATE	1KX9	1K	0 Cel	TIN LEAD	DUAL	R-PDIP-T28		5.5 V	4.318 mm	22 MHz	7.62 mm	Not Qualified	9216 bit	4.5 V	RETRANSMIT	e0	NO	.005 Amp	34.29 mm	35 ns
KM75C101AP-80	Samsung	OTHER FIFO	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO			CMOS	THROUGH-HOLE		ASYNCHRONOUS		512 words	5	5	9	IN-LINE	DIP28,.6	FIFOs	2.54 mm	70 Cel		512X9	512	0 Cel	TIN LEAD	DUAL	R-PDIP-T28	3					Not Qualified				e0		.005 Amp		80 ns
KM75C101API-80	Samsung	OTHER FIFO	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO			CMOS	THROUGH-HOLE		ASYNCHRONOUS		512 words	5	5	9	IN-LINE	DIP28,.6	FIFOs	2.54 mm	85 Cel		512X9	512	-40 Cel	TIN LEAD	DUAL	R-PDIP-T28	3					Not Qualified				e0		.005 Amp		80 ns
KM75C102AP-20	Samsung		COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	30 ns	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	5		9	IN-LINE			2.54 mm	70 Cel	3-STATE	1KX9	1K	0 Cel		DUAL	R-PDIP-T28		5.5 V	5.08 mm		15.24 mm	Not Qualified	9216 bit	4.5 V	RETRANSMIT		NO		37.1 mm	20 ns
KM75C03ANI-35	Samsung	OTHER FIFO	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO			CMOS	THROUGH-HOLE		ASYNCHRONOUS	60 mA	2048 words	5	5	9	IN-LINE	DIP28,.3	FIFOs	2.54 mm	85 Cel		2KX9	2K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T28	3			22 MHz		Not Qualified	18432 bit			e0		.005 Amp		35 ns
KM75C02AP-15	Samsung	OTHER FIFO	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	25 ns	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	1024 words	5	5	9	IN-LINE	DIP28,.6	FIFOs	2.54 mm	70 Cel	3-STATE	1KX9	1K	0 Cel	TIN LEAD	DUAL	R-PDIP-T28		5.5 V	5.08 mm	40 MHz	15.24 mm	Not Qualified	9216 bit	4.5 V	RETRANSMIT	e0	NO	.005 Amp	36.32 mm	15 ns
KM75C102AP-25	Samsung		COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	35 ns	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	5		9	IN-LINE			2.54 mm	70 Cel	3-STATE	1KX9	1K	0 Cel		DUAL	R-PDIP-T28		5.5 V	5.08 mm		15.24 mm	Not Qualified	9216 bit	4.5 V	RETRANSMIT		NO		37.1 mm	25 ns
KM75C03AJ-15	Samsung	OTHER FIFO	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	25 ns	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	150 mA	2048 words	5	5	9	CHIP CARRIER	LDCC32,.5X.6	FIFOs	1.27 mm	70 Cel	3-STATE	2KX9	2K	0 Cel	TIN LEAD	QUAD	R-PQCC-J32		5.5 V	3.55 mm	40 MHz	11.43 mm	Not Qualified	18432 bit	4.5 V	RETRANSMIT	e0	NO	.005 Amp	13.97 mm	15 ns
KM75C101AJI-35	Samsung	OTHER FIFO	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES			CMOS	J BEND		ASYNCHRONOUS	100 mA	512 words	5	5	9	CHIP CARRIER	LDCC32,.5X.6	FIFOs	1.27 mm	85 Cel		512X9	512	-40 Cel	TIN LEAD	QUAD	R-PQCC-J32	3			22 MHz		Not Qualified				e0		.005 Amp		35 ns
KM75C103AP50	Samsung
KM75C103AP-20	Samsung	OTHER FIFO	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	30 ns	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	2048 words	5	5	9	IN-LINE	DIP28,.6	FIFOs	2.54 mm	70 Cel	3-STATE	2KX9	2K	0 Cel	TIN LEAD	DUAL	R-PDIP-T28		5.5 V	5.08 mm	40 MHz	15.24 mm	Not Qualified	18432 bit	4.5 V	RETRANSMIT	e0	NO	.005 Amp	37.1 mm	20 ns
KM75C104AJI-35	Samsung	OTHER FIFO	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES			CMOS	J BEND		ASYNCHRONOUS	100 mA	4096 words	5	5	9	CHIP CARRIER	LDCC32,.5X.6	FIFOs	1.27 mm	85 Cel		4KX9	4K	-40 Cel	TIN LEAD	QUAD	R-PQCC-J32	3			22.2 MHz		Not Qualified	36864 bit			e0		.005 Amp		35 ns
KM75C102AN50	Samsung
KM75C103AJ-20	Samsung	OTHER FIFO	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	30 ns	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	60 mA	2048 words	5	5	9	CHIP CARRIER	LDCC32,.5X.6	FIFOs	1.27 mm	70 Cel	3-STATE	2KX9	2K	0 Cel	TIN LEAD	QUAD	R-PQCC-J32		5.5 V	3.55 mm	40 MHz	11.43 mm	Not Qualified	18432 bit	4.5 V	RETRANSMIT	e0	NO	.005 Amp	13.97 mm	20 ns
KM75C04AN-80	Samsung		COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	25 ns	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words			9	IN-LINE			2.54 mm	70 Cel		4KX9	4K	0 Cel		DUAL	R-PDIP-T28			4.318 mm		7.62 mm	Not Qualified	36864 bit		RETRANSMIT		NO		34.29 mm	80 ns
KM75C01AP-50	Samsung	OTHER FIFO	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	65 ns	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	512 words	5	5	9	IN-LINE	DIP28,.6	FIFOs	2.54 mm	70 Cel	3-STATE	512X9	512	0 Cel	TIN LEAD	DUAL	R-PDIP-T28		5.5 V	5.08 mm	15.38 MHz	15.24 mm	Not Qualified	4608 bit	4.5 V	RETRANSMIT	e0	NO	.005 Amp	36.32 mm	50 ns
KM75C101AN-20	Samsung	OTHER FIFO	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	30 ns	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	512 words	5	5	9	IN-LINE	DIP28,.3	FIFOs	2.54 mm	70 Cel	3-STATE	512X9	512	0 Cel	TIN LEAD	DUAL	R-PDIP-T28		5.5 V	4.318 mm	33 MHz	7.62 mm	Not Qualified	4608 bit	4.5 V	RETRANSMIT	e0	NO	.005 Amp	34.29 mm	20 ns
KM75C03AN-50	Samsung	OTHER FIFO	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	65 ns	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	2048 words	5	5	9	IN-LINE	DIP28,.3	FIFOs	2.54 mm	70 Cel	3-STATE	2KX9	2K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28		5.5 V	4.318 mm	15 MHz	7.62 mm	Not Qualified	18432 bit	4.5 V	RETRANSMIT	e0	NO	.005 Amp	34.29 mm	50 ns
KM75C02AJ-80	Samsung	OTHER FIFO	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	100 ns	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	60 mA	1024 words	5	5	9	CHIP CARRIER	LDCC32,.5X.6	FIFOs	1.27 mm	70 Cel	3-STATE	1KX9	1K	0 Cel	TIN LEAD	QUAD	R-PQCC-J32		5.5 V	3.55 mm	10 MHz	11.43 mm	Not Qualified	9216 bit	4.5 V	RETRANSMIT	e0	NO	.005 Amp	13.97 mm	80 ns
KM75C101ANI-35	Samsung	OTHER FIFO	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO			CMOS	THROUGH-HOLE		ASYNCHRONOUS	100 mA	512 words	5	5	9	IN-LINE	DIP28,.3	FIFOs	2.54 mm	85 Cel		512X9	512	-40 Cel	TIN LEAD	DUAL	R-PDIP-T28	3			22 MHz		Not Qualified				e0		.005 Amp		35 ns
KM75C02AJ-120	Samsung	OTHER FIFO	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES			CMOS	J BEND		ASYNCHRONOUS	60 mA	1024 words	5	5	9	CHIP CARRIER	LDCC32,.5X.6	FIFOs	1.27 mm	70 Cel		1KX9	1K	0 Cel	Tin/Lead (Sn/Pb)	QUAD	R-PQCC-J32						Not Qualified	9216 bit			e0				120 ns

FIFO

FIFO, or First-In, First-Out, is a type of digital circuit that is used in computer systems and digital devices to manage the flow of data. A FIFO circuit stores data in a buffer and retrieves the data in the same order in which it was received, with the first data received being the first data to be retrieved.

FIFO circuits are used in many applications where data needs to be stored and retrieved in a specific order, such as in data communication systems, disk drives, and multimedia devices. For example, in a data communication system, a FIFO circuit can be used to store incoming data packets in a buffer and retrieve them in the order in which they were received, ensuring that the data is processed correctly and in a timely manner.

FIFO circuits are typically implemented using a combination of flip-flops, multiplexers, and control logic. The control logic manages the input and output of data to the FIFO buffer and ensures that the data is stored and retrieved in the correct order.

One of the advantages of using a FIFO circuit is that it provides a simple and efficient way to manage the flow of data. FIFO circuits are easy to implement and can handle large amounts of data. They can also be used in conjunction with other types of digital circuits to implement more complex data processing algorithms.