Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | Cycle Time | No. of Functions | Technology | Screening Level | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Output Characteristics | Organization | No. of Words Code | Minimum Operating Temperature | Terminal Finish | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
SYNCHRONOUS |
35 mA |
512 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
512X9 |
512 |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
S-PQCC-J32 |
3 |
5.5 V |
Not Qualified |
4608 bit |
4.5 V |
e3 |
30 |
260 |
YES |
.005 Amp |
||||||||||||
|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
|||||||||||||||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
32 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
35 mA |
512 words |
5 |
9 |
85 Cel |
3-STATE |
512X9 |
512 |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G32 |
3 |
5.5 V |
4608 bit |
4.5 V |
e3 |
30 |
260 |
YES |
.005 Amp |
15 ns |
||||||||||||||||
|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
45 ns |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
120 mA |
16384 words |
5 |
5 |
9 |
IN-LINE |
FIFOs |
70 Cel |
3-STATE |
16KX9 |
16K |
0 Cel |
MATTE TIN |
DUAL |
R-PDIP-T28 |
5.5 V |
22.22 MHz |
Not Qualified |
147456 bit |
4.5 V |
e3 |
NO |
.012 Amp |
35 ns |
|||||||||||||
|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
35 ns |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
120 mA |
8192 words |
5 |
5 |
9 |
IN-LINE |
FIFOs |
70 Cel |
3-STATE |
8KX9 |
8K |
0 Cel |
MATTE TIN |
DUAL |
R-PDIP-T28 |
5.5 V |
28.5 MHz |
Not Qualified |
73728 bit |
4.5 V |
e3 |
NO |
.012 Amp |
25 ns |
|||||||||||||
Renesas Electronics |
OTHER FIFO |
COMMERCIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
SYNCHRONOUS |
50 mA |
256 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
70 Cel |
256X9 |
256 |
0 Cel |
Tin/Lead (Sn85Pb15) |
QUAD |
R-PQCC-J32 |
1 |
28.6 MHz |
Not Qualified |
e0 |
20 |
225 |
.005 Amp |
20 ns |
|||||||||||||||||
|
Renesas Electronics |
Matte Tin (Sn) - annealed |
3 |
e3 |
30 |
260 |
|||||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
COMMERCIAL |
64 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
10 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
16384 words |
5 |
18 |
FLATPACK |
70 Cel |
16KX18 |
16K |
0 Cel |
TIN LEAD |
QUAD |
S-PQFP-G64 |
Not Qualified |
294912 bit |
e0 |
YES |
10 ns |
|||||||||||||||||||||||
|
Renesas Electronics |
OTHER FIFO |
COMMERCIAL |
32 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
10 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
35 mA |
256 words |
5 |
5 |
9 |
FIFOs |
70 Cel |
3-STATE |
256X9 |
256 |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQFP-G32 |
3 |
5.5 V |
Not Qualified |
2304 bit |
4.5 V |
e3 |
30 |
260 |
YES |
.005 Amp |
6.5 ns |
|||||||||||||
|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
35 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
120 mA |
65536 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
3-STATE |
64KX9 |
64K |
-40 Cel |
MATTE TIN |
QUAD |
R-PQCC-J32 |
3 |
5.5 V |
3.556 mm |
28.5 MHz |
11.4554 mm |
Not Qualified |
589824 bit |
4.5 V |
e3 |
30 |
260 |
NO |
.012 Amp |
13.9954 mm |
25 ns |
|||||
Renesas Electronics |
OTHER FIFO |
COMMERCIAL |
240 |
BGA |
SQUARE |
PLASTIC/EPOXY |
YES |
6.7 ns |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
60 mA |
262144 words |
2.5 |
1.5/2.5,2.5 |
36 |
GRID ARRAY |
BGA240,18X18,40 |
FIFOs |
1 mm |
70 Cel |
256KX36 |
256K |
0 Cel |
Tin/Lead (Sn63Pb37) |
BOTTOM |
S-PBGA-B240 |
3 |
2.625 V |
1.97 mm |
150 MHz |
19 mm |
Not Qualified |
9437184 bit |
2.375 V |
ASYNCHRONOUS OPERATION ALSO POSSIBLE |
e0 |
30 |
225 |
YES |
.01 Amp |
19 mm |
3.8 ns |
||||||
|
Renesas Electronics |
Matte Tin (Sn) - annealed |
3 |
e3 |
30 |
260 |
|||||||||||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
INDUSTRIAL |
56 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
512 words |
5 |
9 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
.5 mm |
85 Cel |
512X9 |
512 |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G56 |
1 |
5.5 V |
1.2 mm |
6.1 mm |
Not Qualified |
4608 bit |
4.5 V |
RETRANSMIT |
e3 |
NO |
14 mm |
15 ns |
||||||||||||||
Renesas Electronics |
OTHER FIFO |
MILITARY |
16 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
MIL-STD-883 Class B |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
45 mA |
64 words |
5 |
5 |
4 |
IN-LINE |
DIP16,.3 |
FIFOs |
2.54 mm |
125 Cel |
64X4 |
64 |
-55 Cel |
DUAL |
R-CDIP-T16 |
5.5 V |
10 MHz |
Not Qualified |
256 bit |
4.5 V |
YES |
|||||||||||||||||
Renesas Electronics |
OTHER FIFO |
||||||||||||||||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
25 ns |
1 |
CMOS |
THROUGH-HOLE |
SERIAL |
SYNCHRONOUS |
1024 words |
5 |
16 |
IN-LINE |
2.54 mm |
85 Cel |
1KX16 |
1K |
-40 Cel |
MATTE TIN |
DUAL |
R-PDIP-T28 |
5.5 V |
4.57 mm |
7.62 mm |
Not Qualified |
16384 bit |
4.5 V |
PORTA/PORTB:PARALLEL/SERIAL |
e3 |
NO |
34.544 mm |
50 ns |
|||||||||||||||
Renesas Electronics |
|||||||||||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
BI-DIRECTIONAL FIFO |
COMMERCIAL |
120 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
4096 words |
5 |
5 |
36 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP120,.63SQ,16 |
FIFOs |
.4 mm |
70 Cel |
4KX36 |
4K |
0 Cel |
MATTE TIN |
QUAD |
S-PQFP-G120 |
3 |
5.5 V |
1.6 mm |
66.7 MHz |
14 mm |
Not Qualified |
147456 bit |
4.5 V |
MAIL BOX |
e3 |
40 |
260 |
YES |
.001 Amp |
14 mm |
10 ns |
|||||||
|
Renesas Electronics |
COMMERCIAL |
256 |
BGA |
SQUARE |
PLASTIC/EPOXY |
YES |
6 ns |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
131072 words |
3.3 |
18 |
GRID ARRAY |
1 mm |
70 Cel |
128KX18 |
128K |
0 Cel |
TIN SILVER COPPER |
BOTTOM |
S-PBGA-B256 |
3 |
3.45 V |
3.5 mm |
17 mm |
Not Qualified |
2359296 bit |
3.15 V |
ALTERNATIVE MEMORY WIDTH:9-BIT |
e1 |
YES |
17 mm |
3.7 ns |
||||||||||||||
|
Renesas Electronics |
OTHER FIFO |
COMMERCIAL |
64 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
75 mA |
32768 words |
5 |
5 |
9 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP64,.47SQ,20 |
FIFOs |
.5 mm |
70 Cel |
32KX9 |
32K |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
66.7 MHz |
10 mm |
Not Qualified |
294912 bit |
4.5 V |
RETRANSMIT; AUTO POWER DOWN; EASY EXPANDABLE IN DEPTH AND WIDTH |
e3 |
30 |
260 |
YES |
.02 Amp |
10 mm |
10 ns |
|||||
|
Renesas Electronics |
OTHER FIFO |
COMMERCIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
10 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
60 mA |
1024 words |
5 |
5 |
9 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
FIFOs |
.8 mm |
70 Cel |
1KX9 |
1K |
0 Cel |
MATTE TIN |
QUAD |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
100 MHz |
14 mm |
Not Qualified |
9216 bit |
4.5 V |
e3 |
30 |
260 |
YES |
.01 Amp |
14 mm |
6.5 ns |
||||||
|
Renesas Electronics |
||||||||||||||||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
COMMERCIAL |
120 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
256 words |
5 |
36 |
FLATPACK, LOW PROFILE, FINE PITCH |
.4 mm |
70 Cel |
256X36 |
256 |
0 Cel |
Matte Tin (Sn) |
QUAD |
S-PQFP-G120 |
3 |
5.5 V |
1.6 mm |
14 mm |
9216 bit |
4.5 V |
MAILBOX |
e3 |
NOT SPECIFIED |
260 |
YES |
14 mm |
10 ns |
||||||||||||
|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
INDUSTRIAL |
64 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
60 mA |
1024 words |
5 |
5 |
18 |
FIFOs |
85 Cel |
1KX18 |
1K |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G64 |
3 |
5.5 V |
Not Qualified |
18432 bit |
4.5 V |
e3 |
30 |
260 |
YES |
.005 Amp |
10 ns |
||||||||||||||
Renesas Electronics |
OTHER FIFO |
COMMERCIAL |
324 |
BGA |
SQUARE |
PLASTIC/EPOXY |
YES |
10 ns |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
60 mA |
16384 words |
2.5 |
2.5 |
72 |
GRID ARRAY |
BGA324,18X18,40 |
FIFOs |
1 mm |
70 Cel |
16KX72 |
16K |
0 Cel |
Tin/Lead (Sn63Pb37) |
BOTTOM |
S-PBGA-B324 |
3 |
2.625 V |
1.97 mm |
100 MHz |
19 mm |
Not Qualified |
1179648 bit |
2.375 V |
ASYNCHRONOUS OPERATION ALSO POSSIBLE |
e0 |
30 |
225 |
YES |
.05 Amp |
19 mm |
4.5 ns |
||||||
|
Renesas Electronics |
COMMERCIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
35 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
140 mA |
5120 words |
5 |
5 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
Other Memory ICs |
.8 mm |
70 Cel |
5KX16 |
5K |
0 Cel |
TIN BISMUTH |
DUAL |
R-PDSO-G44 |
5.5 V |
1.2 mm |
10.16 mm |
Not Qualified |
81920 bit |
4.5 V |
e6 |
YES |
25 ns |
|||||||||||||
Renesas Electronics |
OTHER FIFO |
COMMERCIAL |
240 |
BGA |
SQUARE |
PLASTIC/EPOXY |
YES |
4.44 ns |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
70 mA |
131072 words |
2.5 |
2.5 |
18 |
GRID ARRAY |
BGA240,18X18,40 |
9 |
FIFOs |
1 mm |
70 Cel |
128KX18 |
128K |
0 Cel |
TIN LEAD |
BOTTOM |
S-PBGA-B240 |
3 |
2.625 V |
1.97 mm |
100 MHz |
19 mm |
Not Qualified |
2359296 bit |
2.375 V |
ALTERNATIVE MEMORY WIDTH 9; ASYNCHRONOUS OPERATION ALSO POSSIBLE |
e0 |
30 |
225 |
YES |
.02 Amp |
19 mm |
3.4 ns |
|||||
Renesas Electronics |
OTHER FIFO |
COMMERCIAL |
324 |
BGA |
SQUARE |
PLASTIC/EPOXY |
YES |
6.7 ns |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
60 mA |
32768 words |
2.5 |
2.5 |
72 |
GRID ARRAY |
BGA324,18X18,40 |
FIFOs |
1 mm |
70 Cel |
32KX72 |
32K |
0 Cel |
Tin/Lead (Sn63Pb37) |
BOTTOM |
S-PBGA-B324 |
3 |
2.625 V |
1.97 mm |
150 MHz |
19 mm |
Not Qualified |
2359296 bit |
2.375 V |
ASYNCHRONOUS OPERATION ALSO POSSIBLE |
e0 |
30 |
225 |
YES |
.05 Amp |
19 mm |
3.8 ns |
||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
32 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
J BEND |
PARALLEL |
SYNCHRONOUS |
50 mA |
8192 words |
5 |
9 |
85 Cel |
3-STATE |
8KX9 |
8K |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PLCC-J32 |
3 |
5.5 V |
73728 bit |
4.5 V |
e3 |
30 |
260 |
YES |
.005 Amp |
15 ns |
||||||||||||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
120 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
20 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
.4 mA |
2048 words |
5 |
5 |
36 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP120,.63SQ,16 |
FIFOs |
.4 mm |
85 Cel |
2KX36 |
2K |
-40 Cel |
MATTE TIN |
QUAD |
S-PQFP-G120 |
3 |
5.5 V |
1.6 mm |
50 MHz |
14 mm |
Not Qualified |
73728 bit |
4.5 V |
MAIL BOX; RETRANSMIT |
e3 |
260 |
YES |
14 mm |
13 ns |
|||||||
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
256 |
SQUARE |
PLASTIC/EPOXY |
YES |
7.5 ns |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
100 mA |
32768 words |
3.3 |
36 |
18 |
85 Cel |
32KX36 |
32K |
-40 Cel |
Tin/Lead (Sn63Pb37) |
BOTTOM |
S-PBGA-B256 |
3 |
3.45 V |
133 MHz |
1179648 bit |
3.15 V |
9-BIT MEMORY WIDTH IS ALSO AVAILABLE |
e0 |
30 |
225 |
YES |
.025 Amp |
4 ns |
|||||||||||||||
Renesas Electronics |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
65 ns |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
8192 words |
5 |
9 |
IN-LINE |
85 Cel |
8KX9 |
8K |
-40 Cel |
TIN LEAD |
DUAL |
R-PDIP-T28 |
5.5 V |
73728 bit |
4.5 V |
e0 |
NO |
50 ns |
||||||||||||||||||||||
|
Renesas Electronics |
||||||||||||||||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
OTHER FIFO |
COMMERCIAL |
32 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
J BEND |
PARALLEL |
SYNCHRONOUS |
35 mA |
256 words |
5 |
9 |
70 Cel |
3-STATE |
256X9 |
256 |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PLCC-J32 |
3 |
5.5 V |
2304 bit |
4.5 V |
e3 |
30 |
260 |
YES |
.005 Amp |
15 ns |
||||||||||||||||
|
Renesas Electronics |
OTHER FIFO |
COMMERCIAL |
32 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
J BEND |
PARALLEL |
SYNCHRONOUS |
50 mA |
8192 words |
5 |
9 |
70 Cel |
3-STATE |
8KX9 |
8K |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PLCC-J32 |
3 |
5.5 V |
73728 bit |
4.5 V |
e3 |
30 |
260 |
YES |
.005 Amp |
10 ns |
||||||||||||||||
|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
COMMERCIAL |
64 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
10 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
60 mA |
256 words |
5 |
5 |
18 |
FIFOs |
70 Cel |
256X18 |
256 |
0 Cel |
MATTE TIN |
QUAD |
R-PQFP-G64 |
3 |
5.5 V |
Not Qualified |
4608 bit |
4.5 V |
e3 |
30 |
260 |
YES |
.005 Amp |
6.5 ns |
||||||||||||||
|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
|||||||||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
OTHER FIFO |
COMMERCIAL |
256 |
BGA |
SQUARE |
PLASTIC/EPOXY |
YES |
6 ns |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
100 mA |
65536 words |
3.3 |
3.3 |
18 |
GRID ARRAY |
BGA256,16X16,40 |
9 |
FIFOs |
1 mm |
70 Cel |
64KX18 |
64K |
0 Cel |
Tin/Lead (Sn63Pb37) |
BOTTOM |
S-PBGA-B256 |
3 |
3.45 V |
166 MHz |
Not Qualified |
1179648 bit |
3.15 V |
ALTERNATIVE MEMORY WIDTH:9-BIT |
e0 |
30 |
225 |
YES |
.01 Amp |
3.7 ns |
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Renesas Electronics |
OTHER FIFO |
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|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
35 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
120 mA |
65536 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
3-STATE |
64KX9 |
64K |
-40 Cel |
MATTE TIN |
QUAD |
R-PQCC-J32 |
3 |
5.5 V |
3.556 mm |
28.5 MHz |
11.4554 mm |
Not Qualified |
589824 bit |
4.5 V |
e3 |
30 |
260 |
NO |
.012 Amp |
13.9954 mm |
25 ns |
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|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
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|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
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|
Renesas Electronics |
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|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
60 mA |
1024 words |
5 |
5 |
9 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
FIFOs |
.8 mm |
85 Cel |
1KX9 |
1K |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
66.7 MHz |
14 mm |
Not Qualified |
9216 bit |
4.5 V |
e3 |
30 |
260 |
YES |
.01 Amp |
14 mm |
10 ns |
||||||
Renesas Electronics |
OTHER FIFO |
COMMERCIAL |
121 |
BGA |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
100 mA |
1024 words |
5 |
5 |
18 |
GRID ARRAY |
BGA121,11X11,50 |
FIFOs |
1.27 mm |
70 Cel |
1KX18 |
1K |
0 Cel |
TIN LEAD |
BOTTOM |
S-PBGA-B121 |
3 |
5.5 V |
3.5 mm |
66 MHz |
15 mm |
Not Qualified |
18432 bit |
4.5 V |
e0 |
225 |
YES |
.01 Amp |
15 mm |
10 ns |
||||||||
|
Renesas Electronics |
COMMERCIAL |
56 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
20 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
8192 words |
5 |
9 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
.5 mm |
70 Cel |
8KX9 |
8K |
0 Cel |
TIN |
DUAL |
R-PDSO-G56 |
1 |
5.5 V |
1.2 mm |
6.1 mm |
73728 bit |
4.5 V |
RETRANSMIT |
e3 |
260 |
NO |
14 mm |
12 ns |
||||||||||||||
|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
INDUSTRIAL |
64 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
60 mA |
4096 words |
5 |
5 |
18 |
FIFOs |
85 Cel |
4KX18 |
4K |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQFP-G64 |
3 |
5.5 V |
Not Qualified |
73728 bit |
4.5 V |
e3 |
30 |
260 |
YES |
.005 Amp |
10 ns |
||||||||||||||
|
Renesas Electronics |
OTHER FIFO |
COMMERCIAL |
240 |
BGA |
SQUARE |
PLASTIC/EPOXY |
YES |
6.7 ns |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
90 mA |
131072 words |
2.5 |
1.5/2.5,2.5 |
36 |
GRID ARRAY |
BGA240,18X18,40 |
FIFOs |
1 mm |
70 Cel |
128KX36 |
128K |
0 Cel |
TIN SILVER COPPER |
BOTTOM |
S-PBGA-B240 |
3 |
2.625 V |
1.97 mm |
150 MHz |
19 mm |
Not Qualified |
4718592 bit |
2.375 V |
ASYNCHRONOUS OPERATION ALSO POSSIBLE |
e1 |
YES |
.02 Amp |
19 mm |
3.8 ns |
FIFO, or First-In, First-Out, is a type of digital circuit that is used in computer systems and digital devices to manage the flow of data. A FIFO circuit stores data in a buffer and retrieves the data in the same order in which it was received, with the first data received being the first data to be retrieved.
FIFO circuits are used in many applications where data needs to be stored and retrieved in a specific order, such as in data communication systems, disk drives, and multimedia devices. For example, in a data communication system, a FIFO circuit can be used to store incoming data packets in a buffer and retrieve them in the order in which they were received, ensuring that the data is processed correctly and in a timely manner.
FIFO circuits are typically implemented using a combination of flip-flops, multiplexers, and control logic. The control logic manages the input and output of data to the FIFO buffer and ensures that the data is stored and retrieved in the correct order.
One of the advantages of using a FIFO circuit is that it provides a simple and efficient way to manage the flow of data. FIFO circuits are easy to implement and can handle large amounts of data. They can also be used in conjunction with other types of digital circuits to implement more complex data processing algorithms.