Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | Cycle Time | No. of Functions | Technology | Screening Level | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Output Characteristics | Organization | No. of Words Code | Minimum Operating Temperature | Terminal Finish | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
60 mA |
262144 words |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP64,.63SQ,32 |
FIFOs |
.8 mm |
85 Cel |
256KX18 |
256K |
-40 Cel |
Matte Tin (Sn) |
QUAD |
S-PQFP-G64 |
3 |
3.6 V |
1.6 mm |
66.7 MHz |
14 mm |
Not Qualified |
4718592 bit |
3 V |
e3 |
NOT SPECIFIED |
260 |
YES |
.02 Amp |
14 mm |
10 ns |
||||||
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
64 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
60 mA |
65536 words |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP64,.47SQ,20 |
FIFOs |
.5 mm |
85 Cel |
64KX18 |
64K |
-40 Cel |
TIN LEAD |
QUAD |
S-PQFP-G64 |
3 |
3.6 V |
1.6 mm |
66.7 MHz |
10 mm |
Not Qualified |
1179648 bit |
3 V |
e0 |
30 |
240 |
YES |
.02 Amp |
10 mm |
10 ns |
|||||||
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
64 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
60 mA |
65536 words |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP64,.47SQ,20 |
FIFOs |
.5 mm |
85 Cel |
64KX18 |
64K |
-40 Cel |
TIN LEAD |
QUAD |
S-PQFP-G64 |
3 |
3.6 V |
1.6 mm |
66.7 MHz |
10 mm |
Not Qualified |
1179648 bit |
3 V |
e0 |
30 |
240 |
YES |
.02 Amp |
10 mm |
10 ns |
|||||||
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
128 |
LFQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
40 mA |
65536 words |
3.3 |
3.3 |
36 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP128,.63X.87,20 |
FIFOs |
.5 mm |
85 Cel |
64KX36 |
64K |
-40 Cel |
TIN LEAD |
QUAD |
R-PQFP-G128 |
3 |
3.45 V |
1.6 mm |
66.7 MHz |
14 mm |
Not Qualified |
2359296 bit |
3.15 V |
RETRANSMIT; AUTO POWER DOWN; ASYNCHRONOUS MODE IS ALSO POSSIBLE |
e0 |
30 |
225 |
YES |
.015 Amp |
20 mm |
10 ns |
||||||
|
Renesas Electronics |
OTHER FIFO |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
20 ns |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
80 mA |
512 words |
5 |
5 |
9 |
IN-LINE |
DIP28,.6 |
FIFOs |
2.54 mm |
70 Cel |
512X9 |
512 |
0 Cel |
Matte Tin (Sn) - annealed |
DUAL |
R-PDIP-T28 |
1 |
5.5 V |
4.699 mm |
50 MHz |
15.24 mm |
Not Qualified |
4608 bit |
4.5 V |
RETRANSMIT |
e3 |
30 |
260 |
NO |
.005 Amp |
36.576 mm |
12 ns |
|||||
Renesas Electronics |
OTHER FIFO |
MILITARY |
32 |
QCCN |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
YES |
30 ns |
1 |
CMOS |
MIL-STD-883 Class B |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
140 mA |
1024 words |
5 |
5 |
9 |
CHIP CARRIER |
LCC32,.45X.55 |
FIFOs |
1.27 mm |
125 Cel |
3-STATE |
1KX9 |
1K |
-55 Cel |
TIN LEAD |
QUAD |
R-CQCC-N32 |
5.5 V |
3.048 mm |
33.3 MHz |
11.43 mm |
Not Qualified |
9216 bit |
4.5 V |
RETRANSMIT |
e0 |
NO |
.0009 Amp |
13.97 mm |
20 ns |
|||||||
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
35 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
125 mA |
1024 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
1KX9 |
1K |
-40 Cel |
Tin/Lead (Sn85Pb15) |
QUAD |
R-PQCC-J32 |
1 |
5.5 V |
3.55 mm |
28.5 MHz |
11.43 mm |
Not Qualified |
9216 bit |
4.5 V |
RETRANSMIT |
e0 |
20 |
225 |
NO |
.0005 Amp |
13.97 mm |
25 ns |
||||||
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
35 ns |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
125 mA |
1024 words |
5 |
5 |
9 |
IN-LINE |
DIP28,.6 |
FIFOs |
2.54 mm |
85 Cel |
1KX9 |
1K |
-40 Cel |
Tin/Lead (Sn85Pb15) |
DUAL |
R-PDIP-T28 |
1 |
5.5 V |
4.699 mm |
28.5 MHz |
15.24 mm |
Not Qualified |
9216 bit |
4.5 V |
RETRANSMIT |
e0 |
20 |
240 |
NO |
.0005 Amp |
36.576 mm |
25 ns |
||||||
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
35 ns |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
125 mA |
1024 words |
5 |
5 |
9 |
IN-LINE |
DIP28,.3 |
FIFOs |
2.54 mm |
85 Cel |
1KX9 |
1K |
-40 Cel |
TIN LEAD |
DUAL |
R-PDIP-T28 |
5.5 V |
4.572 mm |
28.5 MHz |
7.62 mm |
Not Qualified |
9216 bit |
4.5 V |
RETRANSMIT |
e0 |
NO |
.0005 Amp |
34.671 mm |
25 ns |
|||||||||
|
Renesas Electronics |
COMMERCIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
45 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
1024 words |
5 |
9 |
CHIP CARRIER |
1.27 mm |
70 Cel |
3-STATE |
1KX9 |
1K |
0 Cel |
Matte Tin (Sn) |
QUAD |
R-PQCC-J32 |
5.5 V |
3.55 mm |
11.43 mm |
Not Qualified |
9216 bit |
4.5 V |
RETRANSMIT |
e3 |
NO |
13.97 mm |
35 ns |
||||||||||||||
Integrated Device Technology |
OTHER FIFO |
COMMERCIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
45 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
125 mA |
1024 words |
5 |
5 |
9 |
SMALL OUTLINE |
SOP28,.5 |
FIFOs |
1.27 mm |
70 Cel |
3-STATE |
1KX9 |
1K |
0 Cel |
Tin/Lead (Sn85Pb15) |
DUAL |
R-PDSO-G28 |
3 |
5.5 V |
3.048 mm |
22.2 MHz |
8.763 mm |
Not Qualified |
9216 bit |
4.5 V |
RETRANSMIT |
e0 |
30 |
225 |
NO |
.0005 Amp |
18.3642 mm |
35 ns |
|||||
Integrated Device Technology |
OTHER FIFO |
COMMERCIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
65 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
80 mA |
1024 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
70 Cel |
3-STATE |
1KX9 |
1K |
0 Cel |
Tin/Lead (Sn85Pb15) |
QUAD |
R-PQCC-J32 |
1 |
5.5 V |
3.55 mm |
15 MHz |
11.43 mm |
Not Qualified |
9216 bit |
4.5 V |
RETRANSMIT |
e0 |
20 |
225 |
NO |
.0005 Amp |
13.97 mm |
50 ns |
|||||
|
Renesas Electronics |
COMMERCIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
65 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
1024 words |
5 |
9 |
CHIP CARRIER |
1.27 mm |
70 Cel |
3-STATE |
1KX9 |
1K |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQCC-J32 |
3 |
5.5 V |
3.55 mm |
11.43 mm |
Not Qualified |
9216 bit |
4.5 V |
RETRANSMIT |
e3 |
30 |
260 |
NO |
13.97 mm |
50 ns |
|||||||||||
Integrated Device Technology |
OTHER FIFO |
COMMERCIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
20 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
120 mA |
2048 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
70 Cel |
3-STATE |
2KX9 |
2K |
0 Cel |
Tin/Lead (Sn85Pb15) |
QUAD |
R-PQCC-J32 |
1 |
5.5 V |
3.556 mm |
50 MHz |
11.4554 mm |
Not Qualified |
18432 bit |
4.5 V |
RETRANSMIT |
e0 |
20 |
225 |
NO |
.002 Amp |
13.9954 mm |
12 ns |
|||||
Integrated Device Technology |
OTHER FIFO |
COMMERCIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
120 mA |
2048 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
70 Cel |
3-STATE |
2KX9 |
2K |
0 Cel |
Tin/Lead (Sn85Pb15) |
QUAD |
R-PQCC-J32 |
1 |
5.5 V |
3.556 mm |
40 MHz |
11.4554 mm |
Not Qualified |
18432 bit |
4.5 V |
RETRANSMIT |
e0 |
20 |
225 |
NO |
.002 Amp |
13.9954 mm |
15 ns |
|||||
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
120 mA |
2048 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
2KX9 |
2K |
-40 Cel |
Tin/Lead (Sn85Pb15) |
QUAD |
R-PQCC-J32 |
1 |
5.5 V |
3.556 mm |
40 MHz |
11.4554 mm |
Not Qualified |
18432 bit |
4.5 V |
RETRANSMIT |
e0 |
20 |
225 |
NO |
.012 Amp |
13.9954 mm |
15 ns |
||||||
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
25 ns |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
120 mA |
2048 words |
5 |
5 |
9 |
IN-LINE |
DIP28,.6 |
FIFOs |
2.54 mm |
85 Cel |
2KX9 |
2K |
-40 Cel |
Tin/Lead (Sn85Pb15) |
DUAL |
R-PDIP-T28 |
1 |
5.5 V |
4.699 mm |
40 MHz |
15.24 mm |
Not Qualified |
18432 bit |
4.5 V |
RETRANSMIT |
e0 |
20 |
240 |
NO |
.012 Amp |
36.576 mm |
15 ns |
||||||
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
25 ns |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
120 mA |
2048 words |
5 |
5 |
9 |
IN-LINE |
DIP28,.3 |
FIFOs |
2.54 mm |
85 Cel |
2KX9 |
2K |
-40 Cel |
TIN LEAD |
DUAL |
R-PDIP-T28 |
5.5 V |
4.572 mm |
40 MHz |
7.62 mm |
Not Qualified |
18432 bit |
4.5 V |
RETRANSMIT |
e0 |
NO |
.012 Amp |
34.671 mm |
15 ns |
|||||||||
Integrated Device Technology |
OTHER FIFO |
COMMERCIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
35 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
120 mA |
2048 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
70 Cel |
3-STATE |
2KX9 |
2K |
0 Cel |
Tin/Lead (Sn85Pb15) |
QUAD |
R-PQCC-J32 |
1 |
5.5 V |
3.55 mm |
28.5 MHz |
11.43 mm |
Not Qualified |
18432 bit |
4.5 V |
RETRANSMIT |
e0 |
20 |
225 |
NO |
.002 Amp |
13.97 mm |
25 ns |
|||||
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
35 ns |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
120 mA |
2048 words |
5 |
5 |
9 |
IN-LINE |
DIP28,.6 |
FIFOs |
2.54 mm |
85 Cel |
2KX9 |
2K |
-40 Cel |
Tin/Lead (Sn85Pb15) |
DUAL |
R-PDIP-T28 |
1 |
5.5 V |
4.699 mm |
28.5 MHz |
15.24 mm |
Not Qualified |
18432 bit |
4.5 V |
RETRANSMIT |
e0 |
20 |
240 |
NO |
.002 Amp |
36.576 mm |
25 ns |
||||||
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
56 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
2 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
150 mA |
8192 words |
5 |
5 |
9 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP56,.3,20 |
FIFOs |
.5 mm |
85 Cel |
8KX9 |
8K |
-40 Cel |
Tin/Lead (Sn85Pb15) |
DUAL |
R-PDSO-G56 |
1 |
5.5 V |
1.2 mm |
40 MHz |
6.1 mm |
Not Qualified |
73728 bit |
4.5 V |
RETRANSMIT |
e0 |
20 |
240 |
NO |
.015 Amp |
14 mm |
15 ns |
||||||
|
Renesas Electronics |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
262144 words |
3.3 |
18 |
FLATPACK, LOW PROFILE |
.8 mm |
85 Cel |
256KX18 |
256K |
-40 Cel |
MATTE TIN |
QUAD |
S-PQFP-G64 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
4718592 bit |
3 V |
e3 |
40 |
260 |
YES |
14 mm |
10 ns |
|||||||||||||
Texas Instruments |
OTHER FIFO |
COMMERCIAL |
100 |
LFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
6 ns |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
35 mA |
65536 words |
3.3 |
3.3 |
18 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA100,10X10,32 |
9 |
FIFOs |
.8 mm |
70 Cel |
64KX18 |
64K |
0 Cel |
TIN LEAD |
BOTTOM |
S-PBGA-B100 |
3 |
3.45 V |
1.4 mm |
166 MHz |
10 mm |
Not Qualified |
1179648 bit |
3.15 V |
CAN ALSO BE CONFIGURED AS 131072 X 9 |
e0 |
20 |
220 |
YES |
.015 Amp |
10 mm |
4.5 ns |
|||||
Integrated Device Technology |
OTHER FIFO |
COMMERCIAL |
208 |
BGA |
SQUARE |
PLASTIC/EPOXY |
YES |
10 ns |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
60 mA |
131072 words |
2.5 |
1.5/2.5,2.5 |
20 |
GRID ARRAY |
BGA208,16X16,40 |
10 |
FIFOs |
1 mm |
70 Cel |
128KX20 |
128K |
0 Cel |
Tin/Lead (Sn63Pb37) |
BOTTOM |
S-PBGA-B208 |
3 |
2.625 V |
1.97 mm |
100 MHz |
17 mm |
Not Qualified |
2621440 bit |
2.375 V |
ALTERNATIVE MEMORY WIDTH 10 |
e0 |
30 |
225 |
YES |
.05 Amp |
17 mm |
4.5 ns |
|||||
|
Renesas Electronics |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
262144 words |
3.3 |
18 |
FLATPACK, LOW PROFILE |
.8 mm |
85 Cel |
256KX18 |
256K |
-40 Cel |
MATTE TIN |
QUAD |
S-PQFP-G64 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
4718592 bit |
3 V |
e3 |
YES |
14 mm |
10 ns |
|||||||||||||||
Integrated Device Technology |
OTHER FIFO |
COMMERCIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
20 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
60 mA |
262144 words |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
FIFOs |
.8 mm |
70 Cel |
256KX18 |
256K |
0 Cel |
TIN LEAD |
QUAD |
S-PQFP-G64 |
3 |
3.6 V |
1.6 mm |
50 MHz |
14 mm |
Not Qualified |
4718592 bit |
3 V |
EASILY EXPANDABLE IN DEPTH AND WIDTH |
e0 |
30 |
240 |
YES |
.02 Amp |
14 mm |
12 ns |
||||||
Cypress Semiconductor |
OTHER FIFO |
COMMERCIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
J BEND |
PARALLEL |
SYNCHRONOUS |
25 mA |
131072 words |
3.3 |
3.3 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
70 Cel |
3-STATE |
128KX9 |
128K |
0 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
3 |
3.6 V |
3.556 mm |
66 MHz |
11.43 mm |
Not Qualified |
1179648 bit |
3 V |
e0 |
YES |
.004 Amp |
13.97 mm |
10 ns |
||||||||
|
Infineon Technologies |
OTHER FIFO |
COMMERCIAL |
64 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
30 mA |
32768 words |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP64,.47SQ,20 |
FIFOs |
.5 mm |
70 Cel |
32KX18 |
32K |
0 Cel |
Matte Tin (Sn) |
QUAD |
S-PQFP-G64 |
3 |
3.6 V |
1.6 mm |
66.7 MHz |
10 mm |
Not Qualified |
589824 bit |
3 V |
RETRANSMIT |
e3 |
20 |
260 |
YES |
.004 Amp |
10 mm |
10 ns |
|||||
Defense Logistics Agency |
MILITARY |
32 |
QCCN |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
YES |
40 ns |
1 |
CMOS |
MIL-STD-883 |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
1024 words |
5 |
9 |
CHIP CARRIER |
125 Cel |
1KX9 |
1K |
-55 Cel |
TIN LEAD |
QUAD |
R-CQCC-N32 |
5.5 V |
Qualified |
9216 bit |
4.5 V |
RETRANSMIT |
e0 |
NO |
30 ns |
|||||||||||||||||||
Cypress Semiconductor |
OTHER FIFO |
COMMERCIAL |
32 |
TQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
65 mA |
256 words |
5 |
5 |
9 |
FLATPACK, THIN PROFILE |
QFP32,.35SQ,32 |
FIFOs |
.8 mm |
70 Cel |
3-STATE |
256X9 |
256 |
0 Cel |
TIN LEAD |
QUAD |
S-PQFP-G32 |
5.5 V |
1.2 mm |
40 MHz |
7 mm |
Not Qualified |
2304 bit |
4.5 V |
RETRANSMIT |
e0 |
NO |
.005 Amp |
7 mm |
15 ns |
||||||||
Cypress Semiconductor |
COMMERCIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
256 words |
5 |
9 |
CHIP CARRIER |
1.27 mm |
70 Cel |
256X9 |
256 |
0 Cel |
MATTE TIN |
QUAD |
R-PQCC-J32 |
5.5 V |
3.55 mm |
11.43 mm |
Not Qualified |
2304 bit |
4.5 V |
RETRANSMIT |
e3 |
NO |
13.97 mm |
15 ns |
||||||||||||||||
Cypress Semiconductor |
OTHER FIFO |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
50 ns |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
115 mA |
512 words |
5 |
5 |
9 |
IN-LINE |
DIP28,.6 |
FIFOs |
2.54 mm |
70 Cel |
3-STATE |
512X9 |
512 |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T28 |
5.5 V |
5.08 mm |
15.24 mm |
Not Qualified |
4608 bit |
4.5 V |
RETRANSMIT |
e0 |
NO |
.02 Amp |
37.211 mm |
40 ns |
|||||||||
Cypress Semiconductor |
OTHER FIFO |
COMMERCIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
J BEND |
PARALLEL |
SYNCHRONOUS |
130 mA |
256 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
70 Cel |
3-STATE |
256X9 |
256 |
0 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
3 |
5.5 V |
3.55 mm |
66.7 MHz |
11.43 mm |
Not Qualified |
2304 bit |
4.5 V |
e0 |
YES |
.028 Amp |
13.97 mm |
10 ns |
||||||||
Cypress Semiconductor |
COMMERCIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
256 words |
5 |
18 |
FLATPACK, LOW PROFILE |
.8 mm |
70 Cel |
256X18 |
256 |
0 Cel |
QUAD |
S-PQFP-G64 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
4608 bit |
4.5 V |
RETRANSMIT |
YES |
14 mm |
10 ns |
||||||||||||||||||
|
Cypress Semiconductor |
OTHER FIFO |
COMMERCIAL |
32 |
TQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
65 mA |
512 words |
5 |
5 |
9 |
FLATPACK, THIN PROFILE |
QFP32,.35SQ,32 |
FIFOs |
.8 mm |
70 Cel |
512X9 |
512 |
0 Cel |
Matte Tin (Sn) |
QUAD |
S-PQFP-G32 |
3 |
5.5 V |
1.2 mm |
40 MHz |
7 mm |
Not Qualified |
4608 bit |
4.5 V |
RETRANSMIT |
e3 |
20 |
260 |
NO |
.005 Amp |
7 mm |
15 ns |
|||||
|
Cypress Semiconductor |
OTHER FIFO |
INDUSTRIAL |
32 |
TQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
20 mA |
512 words |
3.3 |
3.3 |
9 |
FLATPACK, THIN PROFILE |
TQFP32,.35SQ,32 |
FIFOs |
.8 mm |
85 Cel |
512X9 |
512 |
-40 Cel |
Matte Tin (Sn) |
QUAD |
S-PQFP-G32 |
3 |
3.6 V |
1.2 mm |
66.7 MHz |
7 mm |
Not Qualified |
4608 bit |
3 V |
e3 |
20 |
260 |
YES |
.006 Amp |
7 mm |
11 ns |
||||||
Cypress Semiconductor |
OTHER FIFO |
COMMERCIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
2048 words |
5 |
5 |
18 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
FIFOs |
.8 mm |
70 Cel |
3-STATE |
2KX18 |
2K |
0 Cel |
TIN LEAD |
QUAD |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
66.7 MHz |
14 mm |
Not Qualified |
36864 bit |
4.5 V |
RETRANSMIT |
e0 |
YES |
.01 Amp |
14 mm |
10 ns |
||||||||
Cypress Semiconductor |
COMMERCIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
2048 words |
5 |
18 |
FLATPACK, LOW PROFILE |
.8 mm |
70 Cel |
2KX18 |
2K |
0 Cel |
QUAD |
S-PQFP-G64 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
36864 bit |
4.5 V |
RETRANSMIT |
YES |
14 mm |
10 ns |
||||||||||||||||||
|
Infineon Technologies |
OTHER FIFO |
COMMERCIAL |
64 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
30 mA |
8192 words |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP64,.47SQ,20 |
FIFOs |
.5 mm |
70 Cel |
8KX18 |
8K |
0 Cel |
Matte Tin (Sn) |
QUAD |
S-PQFP-G64 |
3 |
3.6 V |
1.6 mm |
66.7 MHz |
10 mm |
Not Qualified |
147456 bit |
3 V |
RETRANSMIT |
e3 |
20 |
260 |
YES |
.004 Amp |
10 mm |
10 ns |
|||||
Cypress Semiconductor |
OTHER FIFO |
COMMERCIAL |
64 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
30 mA |
8192 words |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP64,.47SQ,20 |
FIFOs |
.5 mm |
70 Cel |
3-STATE |
8KX18 |
8K |
0 Cel |
TIN LEAD |
QUAD |
S-PQFP-G64 |
3.6 V |
1.6 mm |
40 MHz |
10 mm |
Not Qualified |
147456 bit |
3 V |
RETRANSMIT |
e0 |
YES |
.004 Amp |
10 mm |
15 ns |
||||||||
|
Cypress Semiconductor |
OTHER FIFO |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
10 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
50 mA |
16384 words |
5 |
5 |
18 |
FLATPACK, LOW PROFILE |
QFP64,.63SQ,32 |
FIFOs |
.8 mm |
85 Cel |
16KX18 |
16K |
-40 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
100 MHz |
14 mm |
Not Qualified |
294912 bit |
4.5 V |
RETRANSMIT |
e4 |
20 |
260 |
YES |
.015 Amp |
14 mm |
8 ns |
|||||
|
Cypress Semiconductor |
OTHER FIFO |
COMMERCIAL |
32 |
TQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
35 mA |
32768 words |
5 |
5 |
9 |
FLATPACK, THIN PROFILE |
TQFP32,.35SQ,32 |
FIFOs |
.8 mm |
70 Cel |
3-STATE |
32KX9 |
32K |
0 Cel |
Matte Tin (Sn) |
QUAD |
S-PQFP-G32 |
3 |
5.5 V |
1.2 mm |
66.7 MHz |
7 mm |
Not Qualified |
294912 bit |
4.5 V |
RETRANSMIT |
e3 |
20 |
260 |
YES |
.01 Amp |
7 mm |
10 ns |
||||
|
Infineon Technologies |
OTHER FIFO |
COMMERCIAL |
64 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
30 mA |
65536 words |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP64,.47SQ,20 |
FIFOs |
.5 mm |
70 Cel |
64KX18 |
64K |
0 Cel |
Matte Tin (Sn) |
QUAD |
S-PQFP-G64 |
3 |
3.6 V |
1.6 mm |
66.7 MHz |
10 mm |
Not Qualified |
1179648 bit |
3 V |
RETRANSMIT |
e3 |
20 |
260 |
YES |
.004 Amp |
10 mm |
10 ns |
|||||
|
Infineon Technologies |
OTHER FIFO |
INDUSTRIAL |
64 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
35 mA |
65536 words |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP64,.47SQ,20 |
FIFOs |
.5 mm |
85 Cel |
64KX18 |
64K |
-40 Cel |
Matte Tin (Sn) |
QUAD |
S-PQFP-G64 |
3 |
3.6 V |
1.6 mm |
66.7 MHz |
10 mm |
Not Qualified |
1179648 bit |
3 V |
RETRANSMIT |
e3 |
20 |
260 |
YES |
.004 Amp |
10 mm |
10 ns |
|||||
|
Cypress Semiconductor |
OTHER FIFO |
COMMERCIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
10 ns |
1 |
CMOS |
J BEND |
PARALLEL |
SYNCHRONOUS |
25 mA |
131072 words |
3.3 |
3.3 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
70 Cel |
128KX9 |
128K |
0 Cel |
Matte Tin (Sn) |
QUAD |
R-PQCC-J32 |
3 |
3.6 V |
3.556 mm |
100 MHz |
11.43 mm |
Not Qualified |
1179648 bit |
3 V |
e3 |
20 |
260 |
YES |
.004 Amp |
13.97 mm |
8 ns |
||||||
|
Cypress Semiconductor |
OTHER FIFO |
COMMERCIAL |
32 |
TQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
20 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
85 mA |
4096 words |
5 |
5 |
9 |
FLATPACK, THIN PROFILE |
QFP32,.35SQ,32 |
FIFOs |
.8 mm |
70 Cel |
4KX9 |
4K |
0 Cel |
Matte Tin (Sn) |
QUAD |
S-PQFP-G32 |
3 |
5.5 V |
1.2 mm |
50 MHz |
7 mm |
Not Qualified |
36864 bit |
4.5 V |
RETRANSMIT |
e3 |
20 |
260 |
NO |
.005 Amp |
7 mm |
10 ns |
|||||
Cypress Semiconductor |
OTHER FIFO |
COMMERCIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
10 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
100 mA |
256 words |
5 |
5 |
9 |
FLATPACK |
QFP64,.66SQ,32 |
FIFOs |
.8 mm |
70 Cel |
3-STATE |
256X9 |
256 |
0 Cel |
TIN LEAD |
QUAD |
S-PQFP-G64 |
5.5 V |
1.6 mm |
100 MHz |
14 mm |
Not Qualified |
2304 bit |
4.5 V |
e0 |
YES |
.1 Amp |
14 mm |
8 ns |
|||||||||
|
Cypress Semiconductor |
OTHER FIFO |
INDUSTRIAL |
209 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
7.5 ns |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
600 mA |
524288 words |
1.5 |
1.5,1.8 |
36 |
GRID ARRAY |
BGA209,11X19,40 |
FIFOs |
1 mm |
85 Cel |
512KX36 |
512K |
-40 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
R-PBGA-B209 |
3 |
1.575 V |
1.96 mm |
133 MHz |
14 mm |
Not Qualified |
18874368 bit |
1.425 V |
ALSO REQUIRED 1.8V SUPPLY NOM, ALTERNATE MIN MEMORY WIDTH : 9 |
e1 |
30 |
260 |
YES |
22 mm |
10 ns |
FIFO, or First-In, First-Out, is a type of digital circuit that is used in computer systems and digital devices to manage the flow of data. A FIFO circuit stores data in a buffer and retrieves the data in the same order in which it was received, with the first data received being the first data to be retrieved.
FIFO circuits are used in many applications where data needs to be stored and retrieved in a specific order, such as in data communication systems, disk drives, and multimedia devices. For example, in a data communication system, a FIFO circuit can be used to store incoming data packets in a buffer and retrieve them in the order in which they were received, ensuring that the data is processed correctly and in a timely manner.
FIFO circuits are typically implemented using a combination of flip-flops, multiplexers, and control logic. The control logic manages the input and output of data to the FIFO buffer and ensures that the data is stored and retrieved in the correct order.
One of the advantages of using a FIFO circuit is that it provides a simple and efficient way to manage the flow of data. FIFO circuits are easy to implement and can handle large amounts of data. They can also be used in conjunction with other types of digital circuits to implement more complex data processing algorithms.