USB FLASH DRIVE Flash Memory 7

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Package Body Material Surface Mount No. of Functions Technology Screening Level Terminal Form Parallel or Serial Operating Mode Sector Size (Words) Maximum Supply Current No. of Words Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Toggle Bit Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Operating Temperature No. of Sectors/Size Command User Interface Terminal Finish Ready or Busy Terminal Position No. of Ports Write Protection JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Maximum Clock Frequency (fCLK) Width Qualification Maximum Write Cycle Time (tWC) Serial Bus Type Boot Block Memory Density Minimum Supply Voltage (Vsup) Additional Features Page Size (words) JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Type Maximum Standby Current Length Common Flash Interface Maximum Access Time Programming Voltage (V) Data Polling

TS-RDC8K2

Transcend Information

USB FLASH DRIVE

DTX/64GB

Kingston Technology Company

USB FLASH DRIVE

XMA

RECTANGULAR

UNSPECIFIED

NO

1

CMOS

UNSPECIFIED

ASYNCHRONOUS

68719476736 words

8

MICROELECTRONIC ASSEMBLY

60 Cel

64GX8

64G

0 Cel

UNSPECIFIED

R-XXMA-X

10.14 mm

21.04 mm

549755813888 bit

USB 3.2 FLASH DRIVE

NOR TYPE

67.3 mm

TS8XDVDS-K

Transcend Information

USB FLASH DRIVE

DTX/32GB

Kingston Technology Company

USB FLASH DRIVE

XMA

RECTANGULAR

UNSPECIFIED

NO

1

CMOS

UNSPECIFIED

ASYNCHRONOUS

34359738368 words

8

MICROELECTRONIC ASSEMBLY

60 Cel

32GX8

32G

0 Cel

UNSPECIFIED

R-XXMA-X

10.14 mm

21.04 mm

274877906944 bit

USB 3.2 FLASH DRIVE

NOR TYPE

67.3 mm

SFU3064GC2AE2TO-I-LF-1A1-STD

Swissbit Ag

USB FLASH DRIVE

XMA

RECTANGULAR

UNSPECIFIED

NO

1

CMOS

UNSPECIFIED

ASYNCHRONOUS

160 mA

68719476736 words

5

8

10

85 Cel

64GX8

64G

-40 Cel

UNSPECIFIED

R-XXMA-X

5.5 V

4.5 mm

12.1 mm

549755813888 bit

4.5 V

USB 3.1 FLASH DRIVE

MLC NAND TYPE

24 mm

5

SFU3064GC2AE2TO-C-LF-1A1-STD

Swissbit Ag

USB FLASH DRIVE

XMA

RECTANGULAR

UNSPECIFIED

NO

1

CMOS

UNSPECIFIED

ASYNCHRONOUS

160 mA

68719476736 words

5

8

10

70 Cel

64GX8

64G

0 Cel

UNSPECIFIED

R-XXMA-X

5.5 V

4.5 mm

12.1 mm

549755813888 bit

4.5 V

USB 3.1 FLASH DRIVE

MLC NAND TYPE

24 mm

5

DTKN/32GB

Kingston Technology Company

USB FLASH DRIVE

XMA

RECTANGULAR

UNSPECIFIED

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

34359738368 words

8

MICROELECTRONIC ASSEMBLY

60 Cel

32GX8

32G

0 Cel

UNSPECIFIED

R-XXMA-N

4.9 mm

12.6 mm

274877906944 bit

USB 3.2 FLASH DRIVE

NOR TYPE

39 mm

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.