105 Flash Memory 67

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	Technology	Terminal Form	Parallel or Serial	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Position	JESD-30 Code	Qualification	Boot Block	Memory Density	Page Size (words)	Type	Maximum Standby Current	Common Flash Interface	Maximum Access Time	Data Polling
PF48F4000M0Y0B0	Micron Technology	FLASH	OTHER	105	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	128K	46 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA105,9X12,32	Flash Memories	.8 mm	85 Cel	16MX16	16M	-30 Cel	128	NO	BOTTOM	R-PBGA-B105	Not Qualified		268435456 bit	16	NOR TYPE	.00003 Amp	YES	96 ns	NO
PF48F3000M0Y1B0	Micron Technology	FLASH	OTHER	105	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	128K	46 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA105,9X12,32	Flash Memories	.8 mm	85 Cel	8MX16	8M	-30 Cel	64	NO	BOTTOM	R-PBGA-B105	Not Qualified		134217728 bit	16	NOR TYPE	.00003 Amp	YES	96 ns	NO
PF48F5000M0Y1B0	Micron Technology	FLASH	OTHER	105	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	128K	46 mA	33554432 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA105,9X12,32	Flash Memories	.8 mm	85 Cel	32MX16	32M	-30 Cel	256	NO	BOTTOM	R-PBGA-B105	Not Qualified		536870912 bit	16	NOR TYPE	.00003 Amp	YES	96 ns	NO
PF48F6000M0YUB0	Micron Technology	FLASH	OTHER	105	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	128K	50 mA	67108864 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA105,9X12,32	Flash Memories	.8 mm	85 Cel	64MX16	64M	-30 Cel	512	NO	BOTTOM	R-PBGA-B105	Not Qualified	TOP	1073741824 bit		NOR TYPE	.00003 Amp	YES	96 ns	NO
PF48F6000M0Y1B0	Micron Technology	FLASH	OTHER	105	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	128K	46 mA	67108864 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA105,9X12,32	Flash Memories	.8 mm	85 Cel	64MX16	64M	-30 Cel	512	NO	BOTTOM	R-PBGA-B105	Not Qualified		1073741824 bit	16	NOR TYPE	.00003 Amp	YES	96 ns	NO
PF48F4000M0YUB0	Micron Technology	FLASH	OTHER	105	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	128K	50 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA105,9X12,32	Flash Memories	.8 mm	85 Cel	16MX16	16M	-30 Cel	128	NO	BOTTOM	R-PBGA-B105	Not Qualified	TOP	268435456 bit		NOR TYPE	.00003 Amp	YES	96 ns	NO
PF48F4000M0Y0BE	Micron Technology	FLASH	OTHER	105	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	128K	46 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA105,9X12,32	Flash Memories	.8 mm	85 Cel	16MX16	16M	-30 Cel	128	NO	BOTTOM	R-PBGA-B105	Not Qualified		268435456 bit	16	NOR TYPE	.00003 Amp	YES	96 ns	NO
PF48F4000M0Y1B0	Micron Technology	FLASH	OTHER	105	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	128K	46 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA105,9X12,32	Flash Memories	.8 mm	85 Cel	16MX16	16M	-30 Cel	128	NO	BOTTOM	R-PBGA-B105	Not Qualified		268435456 bit	16	NOR TYPE	.00003 Amp	YES	96 ns	NO
PF48F3000M0Y1BE	Micron Technology	FLASH	OTHER	105	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	128K	46 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA105,9X12,32	Flash Memories	.8 mm	85 Cel	8MX16	8M	-30 Cel	64	NO	BOTTOM	R-PBGA-B105	Not Qualified		134217728 bit	16	NOR TYPE	.00003 Amp	YES	96 ns	NO
PF48F4000M0YTB0	Micron Technology	FLASH	OTHER	105	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	128K	50 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA105,9X12,32	Flash Memories	.8 mm	85 Cel	16MX16	16M	-30 Cel	128	NO	BOTTOM	R-PBGA-B105	Not Qualified	TOP	268435456 bit	16	NOR TYPE	.00003 Amp	YES	96 ns	NO
PF48F5000M0YTB0	Micron Technology	FLASH	OTHER	105	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	128K	50 mA	33554432 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA105,9X12,32	Flash Memories	.8 mm	85 Cel	32MX16	32M	-30 Cel	256	NO	BOTTOM	R-PBGA-B105	Not Qualified	TOP	536870912 bit	16	NOR TYPE	.00003 Amp	YES	96 ns	NO
PF48F4000M0YFB0	Micron Technology	FLASH	OTHER	105	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	128K	50 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA105,9X12,32	Flash Memories	.8 mm	85 Cel	16MX16	16M	-30 Cel	128	NO	BOTTOM	R-PBGA-B105	Not Qualified	BOTTOM	268435456 bit		NOR TYPE	.00003 Amp	YES	96 ns	NO
PF48F4000M0YCB0	Micron Technology	FLASH	OTHER	105	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	128K	50 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA105,9X12,32	Flash Memories	.8 mm	85 Cel	16MX16	16M	-30 Cel	128	NO	BOTTOM	R-PBGA-B105	Not Qualified	BOTTOM	268435456 bit		NOR TYPE	.00003 Amp	YES	96 ns	NO
PF48F6000M0YFB0	Micron Technology	FLASH	OTHER	105	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	128K	50 mA	67108864 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA105,9X12,32	Flash Memories	.8 mm	85 Cel	64MX16	64M	-30 Cel	512	NO	BOTTOM	R-PBGA-B105	Not Qualified	BOTTOM	1073741824 bit		NOR TYPE	.00003 Amp	YES	96 ns	NO
PF48F6000M0YWB0	Micron Technology	FLASH	OTHER	105	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	128K	50 mA	67108864 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA105,9X12,32	Flash Memories	.8 mm	85 Cel	64MX16	64M	-30 Cel	512	NO	BOTTOM	R-PBGA-B105	Not Qualified	TOP	1073741824 bit		NOR TYPE	.00003 Amp	YES	96 ns	NO
PF48F3000M0YWB0	Micron Technology	FLASH	OTHER	105	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	128K	50 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA105,9X12,32	Flash Memories	.8 mm	85 Cel	8MX16	8M	-30 Cel	64	NO	BOTTOM	R-PBGA-B105	Not Qualified	TOP	134217728 bit		NOR TYPE	.00003 Amp	YES	96 ns	NO
PF48F5000M0YBB0	Micron Technology	FLASH	OTHER	105	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	128K	50 mA	33554432 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA105,9X12,32	Flash Memories	.8 mm	85 Cel	32MX16	32M	-30 Cel	256	NO	BOTTOM	R-PBGA-B105	Not Qualified	BOTTOM	536870912 bit	16	NOR TYPE	.00003 Amp	YES	96 ns	NO
PF48F3000M0YFB0	Micron Technology	FLASH	OTHER	105	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	128K	50 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA105,9X12,32	Flash Memories	.8 mm	85 Cel	8MX16	8M	-30 Cel	64	NO	BOTTOM	R-PBGA-B105	Not Qualified	BOTTOM	134217728 bit		NOR TYPE	.00003 Amp	YES	96 ns	NO
PF48F5000M0Y0BE	Micron Technology	FLASH	OTHER	105	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	128K	46 mA	33554432 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA105,9X12,32	Flash Memories	.8 mm	85 Cel	32MX16	32M	-30 Cel	256	NO	BOTTOM	R-PBGA-B105	Not Qualified		536870912 bit	16	NOR TYPE	.00003 Amp	YES	96 ns	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.