107 Flash Memory 67

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Package Body Material Surface Mount No. of Functions Technology Screening Level Terminal Form Parallel or Serial Operating Mode Sector Size (Words) Maximum Supply Current No. of Words Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Toggle Bit Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Operating Temperature No. of Sectors/Size Command User Interface Terminal Finish Ready or Busy Terminal Position No. of Ports Write Protection JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Maximum Clock Frequency (fCLK) Width Qualification Maximum Write Cycle Time (tWC) Serial Bus Type Boot Block Memory Density Minimum Supply Voltage (Vsup) Additional Features Page Size (words) JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Type Maximum Standby Current Length Common Flash Interface Maximum Access Time Programming Voltage (V) Data Polling

M58PR256LE96ZAC5

STMicroelectronics

FLASH

OTHER

107

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

128K

92 mA

16777216 words

1.8

NO

1.8

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA107,9X12,32

Flash Memories

.8 mm

85 Cel

16MX16

16M

-30 Cel

128

YES

BOTTOM

R-PBGA-B107

2 V

1.2 mm

8 mm

Not Qualified

268435456 bit

1.7 V

16

NOR TYPE

.000045 Amp

11 mm

YES

96 ns

1.8

NO

M58PR512LE96ZAC5

STMicroelectronics

FLASH

OTHER

107

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

128K

92 mA

33554432 words

1.8

NO

1.8

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA107,9X12,32

Flash Memories

.8 mm

85 Cel

32MX16

32M

-30 Cel

256

YES

BOTTOM

R-PBGA-B107

2 V

1.2 mm

8 mm

Not Qualified

536870912 bit

1.7 V

16

NOR TYPE

.000045 Amp

11 mm

YES

96 ns

1.8

NO

M58PR001LE96ZAC5

STMicroelectronics

FLASH

OTHER

107

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

128K

92 mA

67108864 words

1.8

NO

1.8

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA107,9X12,32

Flash Memories

.8 mm

85 Cel

64MX16

64M

-30 Cel

512

YES

BOTTOM

R-PBGA-B107

2 V

1.2 mm

8 mm

Not Qualified

1073741824 bit

1.7 V

16

NOR TYPE

.000045 Amp

11 mm

YES

96 ns

1.8

NO

RD48F3000M0YCC0

Micron Technology

FLASH

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

128K

50 mA

8388608 words

1.8

NO

1.8

16

GRID ARRAY, FINE PITCH

BGA107,9X12,32

Flash Memories

.8 mm

85 Cel

8MX16

8M

-30 Cel

64

NO

BOTTOM

R-PBGA-B107

Not Qualified

BOTTOM

134217728 bit

NOR TYPE

.00003 Amp

YES

96 ns

NO

RD48F5000M0YWC0

Micron Technology

FLASH

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

128K

50 mA

33554432 words

1.8

NO

1.8

16

GRID ARRAY, FINE PITCH

BGA107,9X12,32

Flash Memories

.8 mm

85 Cel

32MX16

32M

-30 Cel

256

NO

BOTTOM

R-PBGA-B107

Not Qualified

TOP

536870912 bit

NOR TYPE

.00003 Amp

YES

96 ns

NO

RD48F4000M0YTC0

Micron Technology

FLASH

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

128K

50 mA

16777216 words

1.8

NO

1.8

16

GRID ARRAY, FINE PITCH

BGA107,9X12,32

Flash Memories

.8 mm

85 Cel

16MX16

16M

-30 Cel

128

NO

BOTTOM

R-PBGA-B107

Not Qualified

TOP

268435456 bit

16

NOR TYPE

.00003 Amp

YES

96 ns

NO

RD48F6000M0YFC0

Micron Technology

FLASH

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

128K

50 mA

67108864 words

1.8

NO

1.8

16

GRID ARRAY, FINE PITCH

BGA107,9X12,32

Flash Memories

.8 mm

85 Cel

64MX16

64M

-30 Cel

512

NO

BOTTOM

R-PBGA-B107

Not Qualified

BOTTOM

1073741824 bit

NOR TYPE

.00003 Amp

YES

96 ns

NO

RD48F6000M0YTC0

Micron Technology

FLASH

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

128K

50 mA

67108864 words

1.8

NO

1.8

16

GRID ARRAY, FINE PITCH

BGA107,9X12,32

Flash Memories

.8 mm

85 Cel

64MX16

64M

-30 Cel

512

NO

BOTTOM

R-PBGA-B107

Not Qualified

TOP

1073741824 bit

16

NOR TYPE

.000005 Amp

YES

96 ns

NO

RD48F3000M0YUC0

Micron Technology

FLASH

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

128K

50 mA

8388608 words

1.8

NO

1.8

16

GRID ARRAY, FINE PITCH

BGA107,9X12,32

Flash Memories

.8 mm

85 Cel

8MX16

8M

-30 Cel

64

NO

BOTTOM

R-PBGA-B107

Not Qualified

TOP

134217728 bit

NOR TYPE

.00003 Amp

YES

96 ns

NO

RD48F5000M0YBC0

Micron Technology

FLASH

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

128K

50 mA

33554432 words

1.8

NO

1.8

16

GRID ARRAY, FINE PITCH

BGA107,9X12,32

Flash Memories

.8 mm

85 Cel

32MX16

32M

-30 Cel

256

NO

BOTTOM

R-PBGA-B107

Not Qualified

BOTTOM

536870912 bit

16

NOR TYPE

.00003 Amp

YES

96 ns

NO

RD48F6000M0YCC0

Micron Technology

FLASH

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

128K

50 mA

67108864 words

1.8

NO

1.8

16

GRID ARRAY, FINE PITCH

BGA107,9X12,32

Flash Memories

.8 mm

85 Cel

64MX16

64M

-30 Cel

512

NO

BOTTOM

R-PBGA-B107

Not Qualified

BOTTOM

1073741824 bit

NOR TYPE

.00003 Amp

YES

96 ns

NO

RD48F3000M0YFC0

Micron Technology

FLASH

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

128K

50 mA

8388608 words

1.8

NO

1.8

16

GRID ARRAY, FINE PITCH

BGA107,9X12,32

Flash Memories

.8 mm

85 Cel

8MX16

8M

-30 Cel

64

NO

BOTTOM

R-PBGA-B107

Not Qualified

BOTTOM

134217728 bit

NOR TYPE

.00003 Amp

YES

96 ns

NO

RD48F4000M0YFC0

Micron Technology

FLASH

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

128K

50 mA

16777216 words

1.8

NO

1.8

16

GRID ARRAY, FINE PITCH

BGA107,9X12,32

Flash Memories

.8 mm

85 Cel

16MX16

16M

-30 Cel

128

NO

BOTTOM

R-PBGA-B107

Not Qualified

BOTTOM

268435456 bit

NOR TYPE

.00003 Amp

YES

96 ns

NO

RD48F4000M0YUC0

Micron Technology

FLASH

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

128K

50 mA

16777216 words

1.8

NO

1.8

16

GRID ARRAY, FINE PITCH

BGA107,9X12,32

Flash Memories

.8 mm

85 Cel

16MX16

16M

-30 Cel

128

NO

BOTTOM

R-PBGA-B107

Not Qualified

TOP

268435456 bit

NOR TYPE

.00003 Amp

YES

96 ns

NO

RD48F5000M0YTC0

Micron Technology

FLASH

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

128K

50 mA

33554432 words

1.8

NO

1.8

16

GRID ARRAY, FINE PITCH

BGA107,9X12,32

Flash Memories

.8 mm

85 Cel

32MX16

32M

-30 Cel

256

NO

BOTTOM

R-PBGA-B107

Not Qualified

TOP

536870912 bit

16

NOR TYPE

.00003 Amp

YES

96 ns

NO

RD48F4000M0YWC0

Micron Technology

FLASH

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

128K

50 mA

16777216 words

1.8

NO

1.8

16

GRID ARRAY, FINE PITCH

BGA107,9X12,32

Flash Memories

.8 mm

85 Cel

16MX16

16M

-25 Cel

128

NO

BOTTOM

R-PBGA-B107

Not Qualified

TOP

268435456 bit

NOR TYPE

.00003 Amp

YES

96 ns

NO

RD48F3000M0YTC0

Micron Technology

FLASH

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

128K

50 mA

8388608 words

1.8

NO

1.8

16

GRID ARRAY, FINE PITCH

BGA107,9X12,32

Flash Memories

.8 mm

85 Cel

8MX16

8M

-30 Cel

64

NO

BOTTOM

R-PBGA-B107

Not Qualified

TOP

134217728 bit

16

NOR TYPE

.00003 Amp

YES

96 ns

NO

RD48F5000M0YFC0

Micron Technology

FLASH

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

128K

50 mA

33554432 words

1.8

NO

1.8

16

GRID ARRAY, FINE PITCH

BGA107,9X12,32

Flash Memories

.8 mm

85 Cel

32MX16

32M

-30 Cel

256

NO

BOTTOM

R-PBGA-B107

Not Qualified

BOTTOM

536870912 bit

NOR TYPE

.00003 Amp

YES

96 ns

NO

RD48F3000M0YBC0

Micron Technology

FLASH

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

128K

50 mA

8388608 words

1.8

NO

1.8

16

GRID ARRAY, FINE PITCH

BGA107,9X12,32

Flash Memories

.8 mm

85 Cel

8MX16

8M

-30 Cel

64

NO

BOTTOM

R-PBGA-B107

Not Qualified

BOTTOM

134217728 bit

16

NOR TYPE

.00003 Amp

YES

96 ns

NO

RD48F6000M0YBC0

Micron Technology

FLASH

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

128K

50 mA

67108864 words

1.8

NO

1.8

16

GRID ARRAY, FINE PITCH

BGA107,9X12,32

Flash Memories

.8 mm

85 Cel

64MX16

64M

-30 Cel

512

NO

BOTTOM

R-PBGA-B107

Not Qualified

BOTTOM

1073741824 bit

16

NOR TYPE

.00003 Amp

YES

96 ns

NO

RD48F6000M0YWC0

Micron Technology

FLASH

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

128K

50 mA

67108864 words

1.8

NO

1.8

16

GRID ARRAY, FINE PITCH

BGA107,9X12,32

Flash Memories

.8 mm

85 Cel

64MX16

64M

-30 Cel

512

NO

BOTTOM

R-PBGA-B107

Not Qualified

TOP

1073741824 bit

NOR TYPE

.00003 Amp

YES

96 ns

NO

RD48F4000M0YCC0

Micron Technology

FLASH

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

128K

50 mA

16777216 words

1.8

NO

1.8

16

GRID ARRAY, FINE PITCH

BGA107,9X12,32

Flash Memories

.8 mm

85 Cel

16MX16

16M

-30 Cel

128

NO

BOTTOM

R-PBGA-B107

Not Qualified

BOTTOM

268435456 bit

NOR TYPE

.00003 Amp

YES

96 ns

NO

RD48F5000M0YCC0

Micron Technology

FLASH

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

128K

50 mA

33554432 words

1.8

NO

1.8

16

GRID ARRAY, FINE PITCH

BGA107,9X12,32

Flash Memories

.8 mm

85 Cel

32MX16

32M

-30 Cel

256

NO

BOTTOM

R-PBGA-B107

Not Qualified

BOTTOM

536870912 bit

NOR TYPE

.00003 Amp

YES

96 ns

NO

RD48F6000M0YUC0

Micron Technology

FLASH

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

128K

50 mA

67108864 words

1.8

NO

1.8

16

GRID ARRAY, FINE PITCH

BGA107,9X12,32

Flash Memories

.8 mm

85 Cel

64MX16

64M

-30 Cel

512

NO

BOTTOM

R-PBGA-B107

Not Qualified

TOP

1073741824 bit

NOR TYPE

.00003 Amp

YES

96 ns

NO

RD48F5000M0YUC0

Micron Technology

FLASH

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

128K

50 mA

33554432 words

1.8

NO

1.8

16

GRID ARRAY, FINE PITCH

BGA107,9X12,32

Flash Memories

.8 mm

85 Cel

32MX16

32M

-30 Cel

256

NO

BOTTOM

R-PBGA-B107

Not Qualified

TOP

536870912 bit

NOR TYPE

.00003 Amp

YES

96 ns

NO

RD48F4000M0YBC0

Micron Technology

FLASH

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

128K

50 mA

16777216 words

1.8

NO

1.8

16

GRID ARRAY, FINE PITCH

BGA107,9X12,32

Flash Memories

.8 mm

85 Cel

16MX16

16M

-30 Cel

128

NO

BOTTOM

R-PBGA-B107

Not Qualified

BOTTOM

268435456 bit

16

NOR TYPE

.00003 Amp

YES

96 ns

NO

RD48F3000M0YWC0

Micron Technology

FLASH

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

128K

50 mA

8388608 words

1.8

NO

1.8

16

GRID ARRAY, FINE PITCH

BGA107,9X12,32

Flash Memories

.8 mm

85 Cel

8MX16

8M

-30 Cel

64

NO

BOTTOM

R-PBGA-B107

Not Qualified

TOP

134217728 bit

NOR TYPE

.00003 Amp

YES

96 ns

NO

PF48F5000M0Y1C0

Micron Technology

FLASH

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

128K

46 mA

33554432 words

1.8

NO

1.8

16

GRID ARRAY, FINE PITCH

BGA107,9X12,32

Flash Memories

.8 mm

85 Cel

32MX16

32M

-30 Cel

256

NO

BOTTOM

R-PBGA-B107

Not Qualified

536870912 bit

16

NOR TYPE

.00003 Amp

YES

96 ns

NO

PF48F4000M0YBC0

Micron Technology

FLASH

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

128K

50 mA

16777216 words

1.8

NO

1.8

16

GRID ARRAY, FINE PITCH

BGA107,9X12,32

Flash Memories

.8 mm

85 Cel

16MX16

16M

-30 Cel

128

NO

BOTTOM

R-PBGA-B107

Not Qualified

BOTTOM

268435456 bit

16

NOR TYPE

.00003 Amp

YES

96 ns

NO

PF48F6000M0Y0CE

Micron Technology

FLASH

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

128K

46 mA

67108864 words

1.8

NO

1.8

16

GRID ARRAY, FINE PITCH

BGA107,9X12,32

Flash Memories

.8 mm

85 Cel

64MX16

64M

-30 Cel

512

NO

BOTTOM

R-PBGA-B107

Not Qualified

1073741824 bit

16

NOR TYPE

.00003 Amp

YES

96 ns

NO

PF48F3000M0Y0C0

Micron Technology

FLASH

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

128K

46 mA

8388608 words

1.8

NO

1.8

16

GRID ARRAY, FINE PITCH

BGA107,9X12,32

Flash Memories

.8 mm

85 Cel

8MX16

8M

-30 Cel

64

NO

BOTTOM

R-PBGA-B107

Not Qualified

134217728 bit

16

NOR TYPE

.00003 Amp

YES

96 ns

NO

PF48F3000M0Y0CE

Micron Technology

FLASH

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

128K

46 mA

8388608 words

1.8

NO

1.8

16

GRID ARRAY, FINE PITCH

BGA107,9X12,32

Flash Memories

.8 mm

85 Cel

8MX16

8M

-30 Cel

64

NO

BOTTOM

R-PBGA-B107

Not Qualified

134217728 bit

16

NOR TYPE

.00003 Amp

YES

96 ns

NO

PF48F5000M0Y0CE

Micron Technology

FLASH

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

128K

46 mA

33554432 words

1.8

NO

1.8

16

GRID ARRAY, FINE PITCH

BGA107,9X12,32

Flash Memories

.8 mm

85 Cel

32MX16

32M

-30 Cel

256

NO

BOTTOM

R-PBGA-B107

Not Qualified

536870912 bit

16

NOR TYPE

.00003 Amp

YES

96 ns

NO

PF48F5000M0YTC0

Micron Technology

FLASH

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

128K

50 mA

33554432 words

1.8

NO

1.8

16

GRID ARRAY, FINE PITCH

BGA107,9X12,32

Flash Memories

.8 mm

85 Cel

32MX16

32M

-30 Cel

256

NO

BOTTOM

R-PBGA-B107

Not Qualified

TOP

536870912 bit

16

NOR TYPE

.00003 Amp

YES

96 ns

NO

PF48F5000M0YCC0

Micron Technology

FLASH

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

128K

50 mA

33554432 words

1.8

NO

1.8

16

GRID ARRAY, FINE PITCH

BGA107,9X12,32

Flash Memories

.8 mm

85 Cel

32MX16

32M

-30 Cel

256

NO

BOTTOM

R-PBGA-B107

Not Qualified

BOTTOM

536870912 bit

NOR TYPE

.00003 Amp

YES

96 ns

NO

PF48F6000M0YWC0

Micron Technology

FLASH

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

128K

50 mA

67108864 words

1.8

NO

1.8

16

GRID ARRAY, FINE PITCH

BGA107,9X12,32

Flash Memories

.8 mm

85 Cel

64MX16

64M

-30 Cel

512

NO

BOTTOM

R-PBGA-B107

Not Qualified

TOP

1073741824 bit

NOR TYPE

.00003 Amp

YES

96 ns

NO

PF48F6000M0YFC0

Micron Technology

FLASH

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

128K

50 mA

67108864 words

1.8

NO

1.8

16

GRID ARRAY, FINE PITCH

BGA107,9X12,32

Flash Memories

.8 mm

85 Cel

64MX16

64M

-30 Cel

512

NO

BOTTOM

R-PBGA-B107

Not Qualified

BOTTOM

1073741824 bit

NOR TYPE

.00003 Amp

YES

96 ns

NO

PF48F3000M0Y1C0

Micron Technology

FLASH

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

128K

46 mA

8388608 words

1.8

NO

1.8

16

GRID ARRAY, FINE PITCH

BGA107,9X12,32

Flash Memories

.8 mm

85 Cel

8MX16

8M

-30 Cel

64

NO

BOTTOM

R-PBGA-B107

Not Qualified

134217728 bit

16

NOR TYPE

.00003 Amp

YES

96 ns

NO

PF48F4000M0Y0C0

Micron Technology

FLASH

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

128K

46 mA

16777216 words

1.8

NO

1.8

16

GRID ARRAY, FINE PITCH

BGA107,9X12,32

Flash Memories

.8 mm

85 Cel

16MX16

16M

-30 Cel

128

NO

BOTTOM

R-PBGA-B107

Not Qualified

268435456 bit

16

NOR TYPE

.00003 Amp

YES

96 ns

NO

PF48F3000M0YFC0

Micron Technology

FLASH

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

128K

50 mA

8388608 words

1.8

NO

1.8

16

GRID ARRAY, FINE PITCH

BGA107,9X12,32

Flash Memories

.8 mm

85 Cel

8MX16

8M

-30 Cel

64

NO

BOTTOM

R-PBGA-B107

Not Qualified

BOTTOM

134217728 bit

NOR TYPE

.00003 Amp

YES

96 ns

NO

PF48F6000M0YBC0

Micron Technology

FLASH

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

128K

50 mA

67108864 words

1.8

NO

1.8

16

GRID ARRAY, FINE PITCH

BGA107,9X12,32

Flash Memories

.8 mm

85 Cel

64MX16

64M

-30 Cel

512

NO

BOTTOM

R-PBGA-B107

Not Qualified

BOTTOM

1073741824 bit

16

NOR TYPE

.00003 Amp

YES

96 ns

NO

PF48F3000M0YWC0

Micron Technology

FLASH

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

128K

50 mA

8388608 words

1.8

NO

1.8

16

GRID ARRAY, FINE PITCH

BGA107,9X12,32

Flash Memories

.8 mm

85 Cel

8MX16

8M

-30 Cel

64

NO

BOTTOM

R-PBGA-B107

Not Qualified

TOP

134217728 bit

NOR TYPE

.00003 Amp

YES

96 ns

NO

PF48F4000M0Y1C0

Micron Technology

FLASH

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

128K

46 mA

16777216 words

1.8

NO

1.8

16

GRID ARRAY, FINE PITCH

BGA107,9X12,32

Flash Memories

.8 mm

85 Cel

16MX16

16M

-30 Cel

128

NO

BOTTOM

R-PBGA-B107

Not Qualified

268435456 bit

16

NOR TYPE

.00003 Amp

YES

96 ns

NO

PF48F4000M0YFC0

Micron Technology

FLASH

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

128K

50 mA

16777216 words

1.8

NO

1.8

16

GRID ARRAY, FINE PITCH

BGA107,9X12,32

Flash Memories

.8 mm

85 Cel

16MX16

16M

-30 Cel

128

NO

BOTTOM

R-PBGA-B107

Not Qualified

BOTTOM

268435456 bit

NOR TYPE

.00003 Amp

YES

96 ns

NO

PF48F5000M0Y0C0

Micron Technology

FLASH

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

128K

46 mA

33554432 words

1.8

NO

1.8

16

GRID ARRAY, FINE PITCH

BGA107,9X12,32

Flash Memories

.8 mm

85 Cel

32MX16

32M

-30 Cel

256

NO

BOTTOM

R-PBGA-B107

Not Qualified

536870912 bit

16

NOR TYPE

.00003 Amp

YES

96 ns

NO

PF48F3000M0Y1CE

Micron Technology

FLASH

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

128K

46 mA

8388608 words

1.8

NO

1.8

16

GRID ARRAY, FINE PITCH

BGA107,9X12,32

Flash Memories

.8 mm

85 Cel

8MX16

8M

-30 Cel

64

NO

BOTTOM

R-PBGA-B107

Not Qualified

134217728 bit

16

NOR TYPE

.00003 Amp

YES

96 ns

NO

PF48F6000M0YTC0

Micron Technology

FLASH

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

128K

50 mA

67108864 words

1.8

NO

1.8

16

GRID ARRAY, FINE PITCH

BGA107,9X12,32

Flash Memories

.8 mm

85 Cel

64MX16

64M

-30 Cel

512

NO

BOTTOM

R-PBGA-B107

Not Qualified

TOP

1073741824 bit

16

NOR TYPE

.000005 Amp

YES

96 ns

NO

PF48F4000M0Y1CE

Micron Technology

FLASH

OTHER

107

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

128K

46 mA

16777216 words

1.8

NO

1.8

16

GRID ARRAY, FINE PITCH

BGA107,9X12,32

Flash Memories

.8 mm

85 Cel

16MX16

16M

-30 Cel

128

NO

BOTTOM

R-PBGA-B107

Not Qualified

268435456 bit

16

NOR TYPE

.00003 Amp

YES

96 ns

NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.