12 Flash Memory 75

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	No. of Words	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Memory Density	Minimum Supply Voltage (Vsup)	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Length	Programming Voltage (V)
N25Q064A41E53H0G	Micron Technology	FLASH	INDUSTRIAL	12	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	67108864 words	1.8	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		85 Cel	64MX1	64M	-40 Cel	BOTTOM	R-PBGA-B12	2 V	.41 mm	108 MHz	2.93 mm	67108864 bit	1.7 V			NOR TYPE	3.5 mm	1.8
N25Q064A31E5340G	Micron Technology	FLASH	INDUSTRIAL	12	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	67108864 words	1.8	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		85 Cel	64MX1	64M	-40 Cel	BOTTOM	R-PBGA-B12	2 V	.41 mm	108 MHz	2.93 mm	67108864 bit	1.7 V			NOR TYPE	3.5 mm	1.8
N25Q064A43E5340F	Micron Technology	FLASH	INDUSTRIAL	12	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	67108864 words	3	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.5 mm	85 Cel	64MX1	64M	-40 Cel	BOTTOM	R-PBGA-B12	3.6 V	.41 mm	108 MHz	2.93 mm	67108864 bit	2.7 V	NOT SPECIFIED	NOT SPECIFIED		3.5 mm	3
N25Q064A13E5340G	Micron Technology	FLASH	INDUSTRIAL	12	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	67108864 words	3	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.5 mm	85 Cel	64MX1	64M	-40 Cel	BOTTOM	R-PBGA-B12	3.6 V	.41 mm	108 MHz	2.93 mm	67108864 bit	2.7 V	NOT SPECIFIED	NOT SPECIFIED		3.5 mm	3
N25Q064A31E5340F	Micron Technology	FLASH	INDUSTRIAL	12	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	67108864 words	1.8	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		85 Cel	64MX1	64M	-40 Cel	BOTTOM	R-PBGA-B12	2 V	.41 mm	108 MHz	2.93 mm	67108864 bit	1.7 V			NOR TYPE	3.5 mm	1.8
N25Q064A33E53A0F	Micron Technology	FLASH	AUTOMOTIVE	12	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	67108864 words	3	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.5 mm	125 Cel	64MX1	64M	-40 Cel	BOTTOM	R-PBGA-B12	3.6 V	.41 mm	108 MHz	2.93 mm	67108864 bit	2.7 V	NOT SPECIFIED	NOT SPECIFIED		3.5 mm	3
N25Q064A11E53H0F	Micron Technology	FLASH	INDUSTRIAL	12	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	67108864 words	1.8	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		85 Cel	64MX1	64M	-40 Cel	BOTTOM	R-PBGA-B12	2 V	.41 mm	108 MHz	2.93 mm	67108864 bit	1.7 V			NOR TYPE	3.5 mm	1.8
N25Q064A11E53H0E	Micron Technology	FLASH	INDUSTRIAL	12	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	67108864 words	1.8	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		85 Cel	64MX1	64M	-40 Cel	BOTTOM	R-PBGA-B12	2 V	.41 mm	108 MHz	2.93 mm	67108864 bit	1.7 V			NOR TYPE	3.5 mm	1.8
N25Q064A21E53H0E	Micron Technology	FLASH	INDUSTRIAL	12	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	67108864 words	1.8	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		85 Cel	64MX1	64M	-40 Cel	BOTTOM	R-PBGA-B12	2 V	.41 mm	108 MHz	2.93 mm	67108864 bit	1.7 V			NOR TYPE	3.5 mm	1.8
N25Q064A13E53A0G	Micron Technology	FLASH	AUTOMOTIVE	12	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	67108864 words	3	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.5 mm	125 Cel	64MX1	64M	-40 Cel	BOTTOM	R-PBGA-B12	3.6 V	.41 mm	108 MHz	2.93 mm	67108864 bit	2.7 V	NOT SPECIFIED	NOT SPECIFIED		3.5 mm	3
N25Q064A31E53H0E	Micron Technology	FLASH	INDUSTRIAL	12	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	67108864 words	1.8	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		85 Cel	64MX1	64M	-40 Cel	BOTTOM	R-PBGA-B12	2 V	.41 mm	108 MHz	2.93 mm	67108864 bit	1.7 V			NOR TYPE	3.5 mm	1.8
N25Q064A21E5340E	Micron Technology	FLASH	INDUSTRIAL	12	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	67108864 words	1.8	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		85 Cel	64MX1	64M	-40 Cel	BOTTOM	R-PBGA-B12	2 V	.41 mm	108 MHz	2.93 mm	67108864 bit	1.7 V			NOR TYPE	3.5 mm	1.8
N25Q064A43E5340G	Micron Technology	FLASH	INDUSTRIAL	12	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	67108864 words	3	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.5 mm	85 Cel	64MX1	64M	-40 Cel	BOTTOM	R-PBGA-B12	3.6 V	.41 mm	108 MHz	2.93 mm	67108864 bit	2.7 V	NOT SPECIFIED	NOT SPECIFIED		3.5 mm	3
N25Q064A23E53A0F	Micron Technology	FLASH	AUTOMOTIVE	12	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	67108864 words	3	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.5 mm	125 Cel	64MX1	64M	-40 Cel	BOTTOM	R-PBGA-B12	3.6 V	.41 mm	108 MHz	2.93 mm	67108864 bit	2.7 V	NOT SPECIFIED	NOT SPECIFIED		3.5 mm	3
N25Q064A23E5340F	Micron Technology	FLASH	INDUSTRIAL	12	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	67108864 words	3	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.5 mm	85 Cel	64MX1	64M	-40 Cel	BOTTOM	R-PBGA-B12	3.6 V	.41 mm	108 MHz	2.93 mm	67108864 bit	2.7 V	NOT SPECIFIED	NOT SPECIFIED		3.5 mm	3
N25Q064A11E53A0G	Micron Technology	FLASH	AUTOMOTIVE	12	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	67108864 words	1.8	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		125 Cel	64MX1	64M	-40 Cel	BOTTOM	R-PBGA-B12	2 V	.41 mm	108 MHz	2.93 mm	67108864 bit	1.7 V			NOR TYPE	3.5 mm	1.8
N25Q064A11E5340E	Micron Technology	FLASH	INDUSTRIAL	12	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	67108864 words	1.8	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		85 Cel	64MX1	64M	-40 Cel	BOTTOM	R-PBGA-B12	2 V	.41 mm	108 MHz	2.93 mm	67108864 bit	1.7 V			NOR TYPE	3.5 mm	1.8
N25Q064A43E53A0G	Micron Technology	FLASH	AUTOMOTIVE	12	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	67108864 words	3	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.5 mm	125 Cel	64MX1	64M	-40 Cel	BOTTOM	R-PBGA-B12	3.6 V	.41 mm	108 MHz	2.93 mm	67108864 bit	2.7 V	NOT SPECIFIED	NOT SPECIFIED		3.5 mm	3
N25Q064A43E53A0F	Micron Technology	FLASH	AUTOMOTIVE	12	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	67108864 words	3	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.5 mm	125 Cel	64MX1	64M	-40 Cel	BOTTOM	R-PBGA-B12	3.6 V	.41 mm	108 MHz	2.93 mm	67108864 bit	2.7 V	NOT SPECIFIED	NOT SPECIFIED		3.5 mm	3
N25Q064A41E53H0F	Micron Technology	FLASH	INDUSTRIAL	12	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	67108864 words	1.8	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		85 Cel	64MX1	64M	-40 Cel	BOTTOM	R-PBGA-B12	2 V	.41 mm	108 MHz	2.93 mm	67108864 bit	1.7 V			NOR TYPE	3.5 mm	1.8
N25Q064A23E53H0E	Micron Technology	FLASH	INDUSTRIAL	12	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	67108864 words	3	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.5 mm	85 Cel	64MX1	64M	-40 Cel	BOTTOM	R-PBGA-B12	3.6 V	.41 mm	108 MHz	2.93 mm	67108864 bit	2.7 V	NOT SPECIFIED	NOT SPECIFIED		3.5 mm	3
N25Q064A23E53H0F	Micron Technology	FLASH	INDUSTRIAL	12	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	67108864 words	3	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.5 mm	85 Cel	64MX1	64M	-40 Cel	BOTTOM	R-PBGA-B12	3.6 V	.41 mm	108 MHz	2.93 mm	67108864 bit	2.7 V	NOT SPECIFIED	NOT SPECIFIED		3.5 mm	3
N25Q064A33E53H0E	Micron Technology	FLASH	INDUSTRIAL	12	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	67108864 words	3	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.5 mm	85 Cel	64MX1	64M	-40 Cel	BOTTOM	R-PBGA-B12	3.6 V	.41 mm	108 MHz	2.93 mm	67108864 bit	2.7 V	NOT SPECIFIED	NOT SPECIFIED		3.5 mm	3
N25Q064A11E5340G	Micron Technology	FLASH	INDUSTRIAL	12	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	67108864 words	1.8	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		85 Cel	64MX1	64M	-40 Cel	BOTTOM	R-PBGA-B12	2 V	.41 mm	108 MHz	2.93 mm	67108864 bit	1.7 V			NOR TYPE	3.5 mm	1.8
N25Q064A33E53A0E	Micron Technology	FLASH	AUTOMOTIVE	12	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	67108864 words	3	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.5 mm	125 Cel	64MX1	64M	-40 Cel	BOTTOM	R-PBGA-B12	3.6 V	.41 mm	108 MHz	2.93 mm	67108864 bit	2.7 V	NOT SPECIFIED	NOT SPECIFIED		3.5 mm	3
N25Q064A13E53H0F	Micron Technology	FLASH	INDUSTRIAL	12	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	67108864 words	3	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.5 mm	85 Cel	64MX1	64M	-40 Cel	BOTTOM	R-PBGA-B12	3.6 V	.41 mm	108 MHz	2.93 mm	67108864 bit	2.7 V	NOT SPECIFIED	NOT SPECIFIED		3.5 mm	3
N25Q064A43E53H0F	Micron Technology	FLASH	INDUSTRIAL	12	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	67108864 words	3	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	.5 mm	85 Cel	64MX1	64M	-40 Cel	BOTTOM	R-PBGA-B12	3.6 V	.41 mm	108 MHz	2.93 mm	67108864 bit	2.7 V	NOT SPECIFIED	NOT SPECIFIED		3.5 mm	3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.