186 Flash Memory 32

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	No. of Words	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Type	Length	Maximum Access Time	Programming Voltage (V)
S29WS01GS0SWHW310	Infineon Technologies	FLASH	OTHER	186	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	67108864 words	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	.65 mm	85 Cel	64MX16	64M	-25 Cel	BOTTOM	R-PBGA-B186	1.95 V	1.2 mm	11 mm	Not Qualified		1073741824 bit	1.7 V	SYNCHRONOUS BURST ACCESS ALSO POSSIBLE		13 mm	115 ns	1.8
S29WS01GS0PWHW020	Infineon Technologies	FLASH	OTHER	186	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	67108864 words	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	.65 mm	85 Cel	64MX16	64M	-25 Cel	BOTTOM	R-PBGA-B186	1.95 V	1.2 mm	11 mm	Not Qualified		1073741824 bit	1.7 V	SYNCHRONOUS BURST ACCESS ALSO POSSIBLE		13 mm	115 ns	1.8
S29WS01GS0PWHW310	Infineon Technologies	FLASH	OTHER	186	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	67108864 words	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	.65 mm	85 Cel	64MX16	64M	-25 Cel	BOTTOM	R-PBGA-B186	1.95 V	1.2 mm	11 mm	Not Qualified		1073741824 bit	1.7 V	SYNCHRONOUS BURST ACCESS ALSO POSSIBLE		13 mm	115 ns	1.8
S29WS01GSABWHW000	Infineon Technologies	FLASH	OTHER	186	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	67108864 words	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	.65 mm	85 Cel	64MX16	64M	-25 Cel	BOTTOM	R-PBGA-B186	1.95 V	1.2 mm	11 mm	Not Qualified	BOTTOM/TOP	1073741824 bit	1.7 V	SYNCHRONOUS BURST ACCESS ALSO POSSIBLE	NOR TYPE	13 mm	115 ns	1.8
S29WS01GS0SWHW000	Infineon Technologies	FLASH	OTHER	186	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	67108864 words	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	.65 mm	85 Cel	64MX16	64M	-25 Cel	BOTTOM	R-PBGA-B186	1.95 V	1.2 mm	11 mm	Not Qualified	BOTTOM/TOP	1073741824 bit	1.7 V	SYNCHRONOUS BURST ACCESS ALSO POSSIBLE	NOR TYPE	13 mm	115 ns	1.8
S29WS01GSAAWHW020	Infineon Technologies	FLASH	OTHER	186	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	67108864 words	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	.65 mm	85 Cel	64MX16	64M	-25 Cel	BOTTOM	R-PBGA-B186	1.95 V	1.2 mm	11 mm	Not Qualified		1073741824 bit	1.7 V	SYNCHRONOUS BURST ACCESS ALSO POSSIBLE		13 mm	115 ns	1.8
S29WS01GS0PWHW320	Infineon Technologies	FLASH	OTHER	186	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	67108864 words	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	.65 mm	85 Cel	64MX16	64M	-25 Cel	BOTTOM	R-PBGA-B186	1.95 V	1.2 mm	11 mm	Not Qualified		1073741824 bit	1.7 V	SYNCHRONOUS BURST ACCESS ALSO POSSIBLE		13 mm	115 ns	1.8
S29WS01GS0SWHW010	Infineon Technologies	FLASH	OTHER	186	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	67108864 words	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	.65 mm	85 Cel	64MX16	64M	-25 Cel	BOTTOM	R-PBGA-B186	1.95 V	1.2 mm	11 mm	Not Qualified		1073741824 bit	1.7 V	SYNCHRONOUS BURST ACCESS ALSO POSSIBLE		13 mm	115 ns	1.8
S29WS01GS0PWHW330	Infineon Technologies	FLASH	OTHER	186	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	67108864 words	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	.65 mm	85 Cel	64MX16	64M	-25 Cel	BOTTOM	R-PBGA-B186	1.95 V	1.2 mm	11 mm	Not Qualified		1073741824 bit	1.7 V	SYNCHRONOUS BURST ACCESS ALSO POSSIBLE		13 mm	115 ns	1.8
S29WS01GS0SWHW020	Infineon Technologies	FLASH	OTHER	186	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	67108864 words	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	.65 mm	85 Cel	64MX16	64M	-25 Cel	BOTTOM	R-PBGA-B186	1.95 V	1.2 mm	11 mm	Not Qualified		1073741824 bit	1.7 V	SYNCHRONOUS BURST ACCESS ALSO POSSIBLE		13 mm	115 ns	1.8
S29WS01GS0SWHW030	Infineon Technologies	FLASH	OTHER	186	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	67108864 words	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	.65 mm	85 Cel	64MX16	64M	-25 Cel	BOTTOM	R-PBGA-B186	1.95 V	1.2 mm	11 mm	Not Qualified		1073741824 bit	1.7 V	SYNCHRONOUS BURST ACCESS ALSO POSSIBLE		13 mm	115 ns	1.8
S29WS01GS0PWHW010	Infineon Technologies	FLASH	OTHER	186	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	67108864 words	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	.65 mm	85 Cel	64MX16	64M	-25 Cel	BOTTOM	R-PBGA-B186	1.95 V	1.2 mm	11 mm	Not Qualified		1073741824 bit	1.7 V	SYNCHRONOUS BURST ACCESS ALSO POSSIBLE		13 mm	115 ns	1.8
S29WS01GSAAWHW000	Infineon Technologies	FLASH	OTHER	186	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	67108864 words	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	.65 mm	85 Cel	64MX16	64M	-25 Cel	BOTTOM	R-PBGA-B186	1.95 V	1.2 mm	11 mm	Not Qualified	BOTTOM/TOP	1073741824 bit	1.7 V	SYNCHRONOUS BURST ACCESS ALSO POSSIBLE	NOR TYPE	13 mm	115 ns	1.8
S29WS01GSAAWHW300	Infineon Technologies	FLASH	OTHER	186	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	67108864 words	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	.65 mm	85 Cel	64MX16	64M	-25 Cel	BOTTOM	R-PBGA-B186	1.95 V	1.2 mm	11 mm	Not Qualified	TOP	1073741824 bit	1.7 V	SYNCHRONOUS BURST ACCESS ALSO POSSIBLE	NOR TYPE	13 mm	115 ns	1.8
S29WS01GSABWHW310	Infineon Technologies	FLASH	OTHER	186	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	67108864 words	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	.65 mm	85 Cel	64MX16	64M	-25 Cel	BOTTOM	R-PBGA-B186	1.95 V	1.2 mm	11 mm	Not Qualified		1073741824 bit	1.7 V	SYNCHRONOUS BURST ACCESS ALSO POSSIBLE		13 mm	115 ns	1.8
S29WS01GSABWHW020	Infineon Technologies	FLASH	OTHER	186	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	67108864 words	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	.65 mm	85 Cel	64MX16	64M	-25 Cel	BOTTOM	R-PBGA-B186	1.95 V	1.2 mm	11 mm	Not Qualified		1073741824 bit	1.7 V	SYNCHRONOUS BURST ACCESS ALSO POSSIBLE		13 mm	115 ns	1.8
S29WS01GS0PWHW000	Infineon Technologies	FLASH	OTHER	186	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	67108864 words	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	.65 mm	85 Cel	64MX16	64M	-25 Cel	BOTTOM	R-PBGA-B186	1.95 V	1.2 mm	11 mm	Not Qualified	BOTTOM/TOP	1073741824 bit	1.7 V	SYNCHRONOUS BURST ACCESS ALSO POSSIBLE	NOR TYPE	13 mm	115 ns	1.8
S29WS01GSABWHW320	Infineon Technologies	FLASH	OTHER	186	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	67108864 words	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	.65 mm	85 Cel	64MX16	64M	-25 Cel	BOTTOM	R-PBGA-B186	1.95 V	1.2 mm	11 mm	Not Qualified		1073741824 bit	1.7 V	SYNCHRONOUS BURST ACCESS ALSO POSSIBLE		13 mm	115 ns	1.8
S29WS01GS0SWHW300	Infineon Technologies	FLASH	OTHER	186	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	67108864 words	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	.65 mm	85 Cel	64MX16	64M	-25 Cel	BOTTOM	R-PBGA-B186	1.95 V	1.2 mm	11 mm	Not Qualified	TOP	1073741824 bit	1.7 V	SYNCHRONOUS BURST ACCESS ALSO POSSIBLE	NOR TYPE	13 mm	115 ns	1.8
S29WS01GSAAWHW310	Infineon Technologies	FLASH	OTHER	186	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	67108864 words	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	.65 mm	85 Cel	64MX16	64M	-25 Cel	BOTTOM	R-PBGA-B186	1.95 V	1.2 mm	11 mm	Not Qualified		1073741824 bit	1.7 V	SYNCHRONOUS BURST ACCESS ALSO POSSIBLE		13 mm	115 ns	1.8
S29WS01GSABWHW330	Infineon Technologies	FLASH	OTHER	186	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	67108864 words	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	.65 mm	85 Cel	64MX16	64M	-25 Cel	BOTTOM	R-PBGA-B186	1.95 V	1.2 mm	11 mm	Not Qualified		1073741824 bit	1.7 V	SYNCHRONOUS BURST ACCESS ALSO POSSIBLE		13 mm	115 ns	1.8
S29WS01GSAAWHW320	Infineon Technologies	FLASH	OTHER	186	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	67108864 words	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	.65 mm	85 Cel	64MX16	64M	-25 Cel	BOTTOM	R-PBGA-B186	1.95 V	1.2 mm	11 mm	Not Qualified		1073741824 bit	1.7 V	SYNCHRONOUS BURST ACCESS ALSO POSSIBLE		13 mm	115 ns	1.8
S29WS01GS0PWHW030	Infineon Technologies	FLASH	OTHER	186	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	67108864 words	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	.65 mm	85 Cel	64MX16	64M	-25 Cel	BOTTOM	R-PBGA-B186	1.95 V	1.2 mm	11 mm	Not Qualified		1073741824 bit	1.7 V	SYNCHRONOUS BURST ACCESS ALSO POSSIBLE		13 mm	115 ns	1.8
S29WS01GS0SWHW320	Infineon Technologies	FLASH	OTHER	186	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	67108864 words	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	.65 mm	85 Cel	64MX16	64M	-25 Cel	BOTTOM	R-PBGA-B186	1.95 V	1.2 mm	11 mm	Not Qualified		1073741824 bit	1.7 V	SYNCHRONOUS BURST ACCESS ALSO POSSIBLE		13 mm	115 ns	1.8
S29WS01GS0SWHW330	Infineon Technologies	FLASH	OTHER	186	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	67108864 words	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	.65 mm	85 Cel	64MX16	64M	-25 Cel	BOTTOM	R-PBGA-B186	1.95 V	1.2 mm	11 mm	Not Qualified		1073741824 bit	1.7 V	SYNCHRONOUS BURST ACCESS ALSO POSSIBLE		13 mm	115 ns	1.8
S29WS01GSAAWHW330	Infineon Technologies	FLASH	OTHER	186	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	67108864 words	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	.65 mm	85 Cel	64MX16	64M	-25 Cel	BOTTOM	R-PBGA-B186	1.95 V	1.2 mm	11 mm	Not Qualified		1073741824 bit	1.7 V	SYNCHRONOUS BURST ACCESS ALSO POSSIBLE		13 mm	115 ns	1.8
S29WS01GSABWHW030	Infineon Technologies	FLASH	OTHER	186	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	67108864 words	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	.65 mm	85 Cel	64MX16	64M	-25 Cel	BOTTOM	R-PBGA-B186	1.95 V	1.2 mm	11 mm	Not Qualified		1073741824 bit	1.7 V	SYNCHRONOUS BURST ACCESS ALSO POSSIBLE		13 mm	115 ns	1.8
S29WS01GSAAWHW010	Infineon Technologies	FLASH	OTHER	186	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	67108864 words	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	.65 mm	85 Cel	64MX16	64M	-25 Cel	BOTTOM	R-PBGA-B186	1.95 V	1.2 mm	11 mm	Not Qualified		1073741824 bit	1.7 V	SYNCHRONOUS BURST ACCESS ALSO POSSIBLE		13 mm	115 ns	1.8
S29WS01GSABWHW300	Infineon Technologies	FLASH	OTHER	186	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	67108864 words	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	.65 mm	85 Cel	64MX16	64M	-25 Cel	BOTTOM	R-PBGA-B186	1.95 V	1.2 mm	11 mm	Not Qualified	TOP	1073741824 bit	1.7 V	SYNCHRONOUS BURST ACCESS ALSO POSSIBLE	NOR TYPE	13 mm	115 ns	1.8
S29WS01GSAAWHW030	Infineon Technologies	FLASH	OTHER	186	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	67108864 words	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	.65 mm	85 Cel	64MX16	64M	-25 Cel	BOTTOM	R-PBGA-B186	1.95 V	1.2 mm	11 mm	Not Qualified		1073741824 bit	1.7 V	SYNCHRONOUS BURST ACCESS ALSO POSSIBLE		13 mm	115 ns	1.8
S29WS01GSABWHW010	Infineon Technologies	FLASH	OTHER	186	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	67108864 words	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	.65 mm	85 Cel	64MX16	64M	-25 Cel	BOTTOM	R-PBGA-B186	1.95 V	1.2 mm	11 mm	Not Qualified		1073741824 bit	1.7 V	SYNCHRONOUS BURST ACCESS ALSO POSSIBLE		13 mm	115 ns	1.8
S29WS01GS0PWHW300	Infineon Technologies	FLASH	OTHER	186	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	67108864 words	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	.65 mm	85 Cel	64MX16	64M	-25 Cel	BOTTOM	R-PBGA-B186	1.95 V	1.2 mm	11 mm	Not Qualified	TOP	1073741824 bit	1.7 V	SYNCHRONOUS BURST ACCESS ALSO POSSIBLE	NOR TYPE	13 mm	115 ns	1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.