40 Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
AM29LV033C-90EI	Spansion	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	30 mA	4194304 words	3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel			4MX8	4M	-40 Cel	64	YES	TIN LEAD	YES	DUAL	R-PDSO-G40	3	3.6 V	1.2 mm		10 mm	Not Qualified		33554432 bit	2.7 V			e0		260	NOR TYPE	.000005 Amp	18.4 mm		90 ns	3	YES
AM29F032B-90EF	Spansion	FLASH	INDUSTRIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	60 mA	4194304 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel			4MX8	4M	-40 Cel	64	YES	MATTE TIN	YES	DUAL	R-PDSO-G40	3	5.5 V	1.2 mm		10 mm	Not Qualified		33554432 bit	4.5 V			e3	40	260	NOR TYPE	.000005 Amp	18.4 mm		90 ns	5	YES
AM29LV002BT-90EC	Spansion	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	262144 words	3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories	20	.5 mm	70 Cel			256KX8	256K	0 Cel	1,2,1,3	YES	TIN LEAD	YES	DUAL	R-PDSO-G40	3	3.6 V	1.2 mm		10 mm	Not Qualified	TOP	2097152 bit	2.7 V	MIN 1000K WRITE CYCLES; 20 YEAR DATA RETENTION; TOP BOOT BLOCK		e0		260	NOR TYPE	.000005 Amp	18.4 mm		90 ns	3	YES
AM29LV017B-70REC	Spansion	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	30 mA	2097152 words	3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel			2MX8	2M	0 Cel	32	YES		YES	DUAL	R-PDSO-G40	1	3.6 V	1.2 mm		10 mm	Not Qualified		16777216 bit	2.7 V						NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	YES
AM29LV002BT-90EI	Spansion	FLASH	INDUSTRIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	262144 words	3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories	20	.5 mm	85 Cel			256KX8	256K	-40 Cel	1,2,1,3	YES	TIN LEAD	YES	DUAL	R-PDSO-G40	3	3.6 V	1.2 mm		10 mm	Not Qualified	TOP	2097152 bit	2.7 V	MIN 1000K WRITE CYCLES; 20 YEAR DATA RETENTION; TOP BOOT BLOCK		e0		260	NOR TYPE	.000005 Amp	18.4 mm		90 ns	3	YES
E28F008SA-120	Intel	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	50 mA	1048576 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel		3-STATE	1MX8	1M	0 Cel	16	YES	TIN LEAD	YES	DUAL	R-PDSO-G40		5.5 V	1.2 mm		10 mm	Not Qualified		8388608 bit	4.5 V	DEEP POWER-DOWN		e0			NOR TYPE	.0000012 Amp	18.4 mm		120 ns	12	NO
MBM29F033C-90PTN	Spansion	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	45 mA	4194304 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel			4MX8	4M	-40 Cel	64	YES	TIN LEAD	YES	DUAL	R-PDSO-G40		5.5 V	1.2 mm		10 mm	Not Qualified		33554432 bit	4.5 V			e0			NOR TYPE	.000005 Amp	18.4 mm		90 ns	5	YES
AM29F016D-70E4D	Spansion	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	60 mA	2097152 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel			2MX8	2M	0 Cel	32	YES	MATTE TIN	YES	DUAL	R-PDSO-G40	3	5.5 V	1.2 mm		10 mm	Not Qualified		16777216 bit	4.5 V			e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	5	YES
AT45DB642-TI	Atmel	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS			67108864 words	3			1	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel			64MX1	64M	-40 Cel			TIN LEAD		DUAL	R-PDSO-G40	3	3.6 V	1.2 mm		10 mm	Not Qualified		67108864 bit	2.7 V	ORGANISED AS 8192 PAGES OF 1056 BYTES EACH		e0			NOR TYPE		18.4 mm			2.7
MT28F004B5VG-8B	Micron Technology	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	524288 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel			512KX8	512K	0 Cel	1,2,1,3	YES	TIN LEAD		DUAL	R-PDSO-G40		5.5 V	1.2 mm		10 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V	100000 ERASE CYCLES; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		80 ns	5	NO
MT28F008B3VG-10T	Micron Technology	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	30 mA	1048576 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel			1MX8	1M	0 Cel	1,2,1,7	YES	TIN LEAD		DUAL	R-PDSO-G40		3.6 V	1.2 mm		10 mm	Not Qualified	TOP	8388608 bit	3 V	100,000 ERASE CYCLES, USER SELECTABLE VPP=3.3V/5V/12V; TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		100 ns	3	NO
MT28F008B3VG-10TET	Micron Technology	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	30 mA	1048576 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel			1MX8	1M	-40 Cel	1,2,1,7	YES	TIN LEAD		DUAL	R-PDSO-G40		3.6 V	1.2 mm		10 mm	Not Qualified	TOP	8388608 bit	3 V	100,000 ERASE CYCLES, USER SELECTABLE VPP=3.3V/5V/12V; TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		100 ns	3	NO
E28F002BC-T80	Intel	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	60 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel		3-STATE	256KX8	256K	0 Cel	1,2,1,1	YES	TIN LEAD		DUAL	R-PDSO-G40		5.5 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	TOP	2097152 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.000008 Amp	18.4 mm		80 ns	12	NO
E28F002BX-T80	Intel	FLASH	COMMERCIAL	40	SON	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	NO LEAD	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	5	NO	5	8	SMALL OUTLINE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel		3-STATE	256KX8	256K	0 Cel	1,2,1,1	YES			DUAL	R-PDSO-N40		5.25 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	TOP	2097152 bit	4.75 V	BOTTOM BOOT BLOCK					NOR TYPE	.0000012 Amp	18.4 mm		80 ns	12	NO
MBM29F033C-70PTN	Spansion	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	45 mA	4194304 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel			4MX8	4M	-20 Cel	64	YES	TIN LEAD	YES	DUAL	R-PDSO-G40		5.25 V	1.2 mm		10 mm	Not Qualified		33554432 bit	4.75 V			e0			NOR TYPE	.000005 Amp	18.4 mm		70 ns	5	YES
MT28F016S5VG-9	Micron Technology	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	50 mA	2097152 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel			2MX8	2M	0 Cel	32	YES	TIN LEAD	YES	DUAL	R-PDSO-G40		5.5 V	1.2 mm		10 mm	Not Qualified		16777216 bit	4.5 V	DEEP POWER DOWN; USER CONFIGURABLE 5V OR 12V VPP		e0			NOR TYPE	.00001 Amp	18.4 mm		90 ns	5	NO
PA28F400BX-B60	Intel	FLASH	COMMERCIAL	40	SON	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	NO LEAD	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	5	NO	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel		3-STATE	256KX16	256K	0 Cel	1,2,1,3	YES			DUAL	R-PDSO-N40		5.5 V	2.95 mm		13.3 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK					NOR TYPE	.0000012 Amp	28.2 mm		60 ns	12	NO
S29GL032M11TAIR0	Infineon Technologies	FLASH	INDUSTRIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	60 mA	4194304 words	3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel			4MX8	4M	-40 Cel	64	YES	TIN LEAD	YES	DUAL	R-PDSO-G40	3	3.6 V	1.2 mm		10 mm	Not Qualified		33554432 bit	3 V	IT ALSO OPERATES AT 2.7 TO 3.6 V SUPPLY FULL VOLTAGE RANGE	8	e0		260	NOR TYPE	.000005 Amp	18.4 mm	YES	110 ns	3	YES
SST49LF008A-33-4C-EIE	Microchip Technology	FLASH	OTHER	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	4K	24 mA	1048576 words	3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel			1MX8	1M	0 Cel	256	YES	Matte Tin (Sn) - annealed		DUAL	R-PDSO-G40	3	3.6 V	1.2 mm		10 mm	Not Qualified	TOP	8388608 bit	3 V			e3	40	260	NOR TYPE	.0001 Amp	18.4 mm		120 ns	3	YES
TMS28F008LB12CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel			1MX8	1M	0 Cel					DUAL	R-PDSO-G40		3.6 V	1.2 mm		10 mm	Not Qualified	BOTTOM	8388608 bit	3 V	BOTTOM BOOT BLOCK					NOR TYPE		18.4 mm		120 ns	3
TMS28F800AZYB80CDCDE	Texas Instruments	FLASH	INDUSTRIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel			1MX8	1M	-40 Cel					DUAL	R-PDSO-G40		3.6 V	1.2 mm		10 mm		BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK							18.4 mm		80 ns	3
TMS28F004AFT80BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	524288 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel		3-STATE	512KX8	512K	0 Cel	1,2,1,3	YES			DUAL	R-PDSO-G40		5.5 V	1.2 mm	10000 Write/Erase Cycles	10 mm	Not Qualified	TOP	4194304 bit	4.5 V	USER-SELECTABLE 5V OR 12 V VPP; TOP BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	18.4 mm		80 ns	5	NO
TMS28F040-10C2DUE	Texas Instruments	FLASH	INDUSTRIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		32K	40 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel	YES		512KX8	512K	-40 Cel	16	YES			DUAL	R-PDSO-G40				100 Write/Erase Cycles		Not Qualified		4194304 bit					NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp			100 ns		YES
TMS28F800AEYB12CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	70 Cel			1MX8	1M	0 Cel					DUAL	R-PDSO-G40		5.5 V	1.2 mm		10 mm		BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK							18.4 mm		120 ns	5
TMS28F800AEYT12BDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	125 Cel			1MX8	1M	-40 Cel					DUAL	R-PDSO-G40		5.5 V	1.2 mm		10 mm		TOP	8388608 bit	4.5 V	TOP BOOT BLOCK							18.4 mm		120 ns	5
TMS28F002AFB60BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel		3-STATE	256KX8	256K	0 Cel	1,2,1,1	YES			DUAL	R-PDSO-G40		5.5 V	1.2 mm	10000 Write/Erase Cycles	10 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	10000 PROGRAM/ERASE CYCLES; BOTTOM BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	18.4 mm		60 ns	5	NO
TMS28F008AZYT80CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	70 Cel			512KX16	512K	0 Cel					DUAL	R-PDSO-G40		3.6 V	1.2 mm		10 mm		TOP	8388608 bit	2.7 V	TOP BOOT BLOCK							18.4 mm		80 ns	3
TMS28F008AVB-120CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE					1.27 mm	70 Cel			1MX8	1M	0 Cel					DUAL	R-PDSO-G40		3.6 V	1.2 mm		10 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	100000 PROGRAM/ERASE CYCLES; BOTTOM BOOT BLOCK					NOR TYPE		18.4 mm		120 ns	3
TMS28F210-15C3DBWL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP40,.56,20		Flash Memories		.5 mm	70 Cel		3-STATE	64KX16	64K	0 Cel		YES			DUAL	R-PDSO-G40		5.5 V	1.2 mm	1000 Write/Erase Cycles	10 mm	Not Qualified		1048576 bit	4.5 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	12.4 mm		150 ns	12	NO
TMS28F008ALYB10BDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	125 Cel			512KX16	512K	-40 Cel					DUAL	R-PDSO-G40		5.5 V	1.2 mm		10 mm		BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK							18.4 mm		100 ns	5
TMS28F800ASYT12BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	70 Cel			1MX8	1M	0 Cel					DUAL	R-PDSO-G40		5.5 V	1.2 mm		10 mm		TOP	8388608 bit	4.5 V	TOP BOOT BLOCK							18.4 mm		120 ns	5
TMS28F008LT10BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel			1MX8	1M	0 Cel					DUAL	R-PDSO-G40		3.6 V	1.2 mm		10 mm	Not Qualified	TOP	8388608 bit	3 V	TOP BOOT BLOCK					NOR TYPE		18.4 mm		100 ns	3
TMS28F008LT12CDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	125 Cel			1MX8	1M	-40 Cel					DUAL	R-PDSO-G40		3.6 V	1.2 mm		10 mm	Not Qualified	TOP	8388608 bit	3 V	TOP BOOT BLOCK					NOR TYPE		18.4 mm		120 ns	3
TMS28F008ASYB12BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	70 Cel			512KX16	512K	0 Cel					DUAL	R-PDSO-G40		5.5 V	1.2 mm		10 mm		BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK							18.4 mm		120 ns	5
TMS28F800ASYT10BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	70 Cel			1MX8	1M	0 Cel					DUAL	R-PDSO-G40		5.5 V	1.2 mm		10 mm		TOP	8388608 bit	4.5 V	TOP BOOT BLOCK							18.4 mm		100 ns	5
TMS28F008SZB-70CDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE, THIN PROFILE					1.27 mm	125 Cel			1MX8	1M	-40 Cel					DUAL	R-PDSO-G40		5.5 V	1.2 mm		10 mm	Not Qualified	BOTTOM	8388608 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; TTL COMPATIBLE I/O; BOTTOM BOOT BLOCK					NOR TYPE		18.4 mm		70 ns	3
TMS29F008B-100BDCDE	Texas Instruments	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	1048576 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel		3-STATE	1MX8	1M	-40 Cel	1,2,1,15	YES		YES	DUAL	R-PDSO-G40		5.5 V	1.2 mm	10000 Write/Erase Cycles	10 mm	Not Qualified	BOTTOM	8388608 bit	4.5 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	18.4 mm		100 ns	5	YES
TMS28F002AST80BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	3.3	NO	3.3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel		3-STATE	256KX8	256K	0 Cel	1,2,1,1	YES			DUAL	R-PDSO-G40		3.6 V	1.2 mm	10000 Write/Erase Cycles	10 mm	Not Qualified	TOP	2097152 bit	3 V	USER-SELECTABLE 5V OR 12 V VPP; TOP BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	18.4 mm		150 ns	5	NO
TMS28F800ALYT10CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	70 Cel			1MX8	1M	0 Cel					DUAL	R-PDSO-G40		5.5 V	1.2 mm		10 mm		TOP	8388608 bit	4.5 V	TOP BOOT BLOCK							18.4 mm		100 ns	5
TMS28F008ASB-70CDCDE	Texas Instruments	FLASH	INDUSTRIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	60 mA	1048576 words	3.3	NO	3.3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		1.27 mm	85 Cel			1MX8	1M	-40 Cel	1,2,1,7	YES			DUAL	R-PDSO-G40		3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	BOTTOM	8388608 bit	3 V	100000 PROGRAM/ERASE CYCLES; USER SELECTABLE 5V VCC; BOTTOM BOOT BLOCK					NOR TYPE	.000008 Amp	18.4 mm		100 ns	3	NO
TMS28F004AFB80CDCDE	Texas Instruments	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	524288 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel		3-STATE	512KX8	512K	-40 Cel	1,2,1,3	YES			DUAL	R-PDSO-G40		5.5 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V	USER-SELECTABLE 5V OR 12 V VPP; BOTTOM BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	18.4 mm		80 ns	5	NO
TMS28F210-17C3NL4	Texas Instruments	FLASH	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	IN-LINE	DIP40,.6		Flash Memories		2.54 mm	70 Cel		3-STATE	64KX16	64K	0 Cel		YES			DUAL	R-PDIP-T40		5.5 V	5.08 mm	1000 Write/Erase Cycles	15.24 mm	Not Qualified		1048576 bit	4.5 V	BULK ERASE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	52.455 mm		170 ns	12	NO
TMS28F002AEB80BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	3	NO	3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel		3-STATE	256KX8	256K	0 Cel	1,2,1,1	YES			DUAL	R-PDSO-G40		3.6 V	1.2 mm	10000 Write/Erase Cycles	10 mm	Not Qualified	BOTTOM	2097152 bit	2.7 V	USER-SELECTABLE 5V OR 12 V VPP; BOTTOM BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	18.4 mm		150 ns	5	NO
TMS28F040-17C2DUQ4	Texas Instruments	FLASH	AUTOMOTIVE	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		32K	40 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories		.5 mm	125 Cel	YES		512KX8	512K	-40 Cel	16	YES			DUAL	R-PDSO-G40				100 Write/Erase Cycles				4194304 bit					NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp			170 ns		YES
TMS29LF008B-100CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	1048576 words	3.3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel			1MX8	1M	0 Cel	1,2,1,15	YES		YES	DUAL	R-PDSO-G40		3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	18.4 mm		100 ns	3	YES
TMS28F002AFB80CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel		3-STATE	256KX8	256K	0 Cel	1,2,1,1	YES			DUAL	R-PDSO-G40		5.5 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; BOTTOM BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	18.4 mm		80 ns	5	NO
TMS29F002B-80BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	262144 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSOP40,.79		Flash Memories		.5 mm	70 Cel			256KX8	256K	0 Cel	1,2,1,3	YES			DUAL	R-PDSO-G40		5.5 V	1.2 mm	10000 Write/Erase Cycles	10 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.4 mm		80 ns	5	YES
TMS29LF008T-90DCDQB	Texas Instruments	FLASH	AUTOMOTIVE	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	60 mA	1048576 words		YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories		.5 mm	125 Cel			1MX8	1M	-40 Cel	1,2,1,15	YES		YES	DUAL	R-PDSO-G40				100000 Write/Erase Cycles			TOP	8388608 bit					NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp			90 ns		YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.