48 Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Maximum Write Cycle Time (tWC)	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
M29F400T-70N6R	STMicroelectronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5		YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	YES	3-STATE	256KX16	256K	-40 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	5.5 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified		TOP	4194304 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		70 ns	5	YES
M28W320FCB10N6E	STMicroelectronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	2097152 words	3		NO	1.8/3.3,3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel			2MX16	2M	-40 Cel	8,63	YES	TIN/TIN BISMUTH		DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified		BOTTOM	33554432 bit	2.7 V			e3/e6	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	100 ns	3	NO
M29W800DB90ZA6E	STMicroelectronics	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3		YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel			512KX16	512K	-40 Cel	1,2,1,15	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48	3.6 V	1.2 mm		6 mm	Not Qualified		BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK		e1			NOR TYPE	.0001 Amp	9 mm	YES	90 ns	3	YES
M28W320ECT70N6F	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words	3				16	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel			2MX16	2M	-40 Cel			TIN/TIN BISMUTH		DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified		TOP	33554432 bit	2.7 V	TOP BOOT BLOCK		e3/e6	NOT SPECIFIED	260	NOR TYPE		18.4 mm		70 ns	3
M28W320ECT90N6E	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words	3				16	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel			2MX16	2M	-40 Cel			TIN/TIN BISMUTH		DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified		TOP	33554432 bit	2.7 V	TOP BOOT BLOCK		e3/e6	NOT SPECIFIED	260	NOR TYPE		18.4 mm		90 ns	3
M28W160BT85N6T	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	1048576 words	3		NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel			1MX16	1M	-40 Cel	8,31	YES	MATTE TIN		DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified		TOP	16777216 bit	2.7 V	TOP BOOT BLOCK		e3			NOR TYPE	.000005 Amp	18.4 mm	YES	85 ns	3	NO
M29W400DT45N1F	STMicroelectronics	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3.3		YES	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel			256KX16	256K	0 Cel	1,2,1,7	YES	TIN/TIN BISMUTH	YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified		TOP	4194304 bit	3 V	TOP BOOT BLOCK		e3/e6	NOT SPECIFIED	260	NOR TYPE	.0001 Amp	18.4 mm		45 ns	3	YES
M28F220-100YN1	STMicroelectronics	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	35 mA	131072 words	5		NO	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel			128KX16	128K	0 Cel	1,2,1,1	YES	Tin/Lead (Sn/Pb)		DUAL	R-PDSO-G48			100 Write/Erase Cycles		Not Qualified		BOTTOM	2097152 bit				e0			NOR TYPE	.000005 Amp			100 ns		NO
M28W320FCT90N6F	STMicroelectronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	2097152 words	3		NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel			2MX16	2M	-40 Cel	8,63	YES	TIN/TIN BISMUTH		DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified		TOP	33554432 bit	2.7 V			e3/e6	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	90 ns	3	NO
M29W320ET70ZE1	STMicroelectronics	FLASH	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	2097152 words	3		YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	70 Cel			2MX16	2M	0 Cel	8,63	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B48	3.6 V	1.2 mm		6 mm	Not Qualified		TOP	33554432 bit	2.7 V			e0			NOR TYPE	.0001 Amp	8 mm	YES	70 ns	3	YES
M28W640ECB85ZB1S	STMicroelectronics	FLASH	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3.3				16	GRID ARRAY, THIN PROFILE, FINE PITCH					.75 mm	70 Cel			4MX16	4M	0 Cel					BOTTOM	R-PBGA-B48	3.6 V	1.2 mm		6.39 mm	Not Qualified		BOTTOM	67108864 bit	3 V	BOTTOM BOOT BLOCK					NOR TYPE		10.5 mm		85 ns	3
M29W320DT70N6E	STMicroelectronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	2097152 words	3.3		YES	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel			2MX16	2M	-40 Cel	1,2,1,63	YES	TIN/TIN BISMUTH	YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified		TOP	33554432 bit	3 V	TOP BOOT BLOCK		e3/e6	NOT SPECIFIED	260	NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
M29F800AB90N1	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	5		YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel			512KX16	512K	0 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	5.5 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified		BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.00015 Amp	18.4 mm		90 ns	5	YES
M29W320DB90N6E	STMicroelectronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	2097152 words	3		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel			2MX16	2M	-40 Cel	1,2,1,63	YES	TIN/TIN BISMUTH	YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified		BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e3/e6	NOT SPECIFIED	260	NOR TYPE	.0001 Amp	18.4 mm	YES	90 ns	3	YES
M59DR032B100N1	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	40 mA	2097152 words	1.8		YES	1.8/2	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel			2MX16	2M	0 Cel	8,63	YES	TIN LEAD		DUAL	R-PDSO-G48	2.2 V	1.2 mm		12 mm	Not Qualified		BOTTOM	33554432 bit	1.65 V		4	e0			NOR TYPE	.00001 Amp	18.4 mm	YES	100 ns	1.8	YES
M29W200BT70N1E	STMicroelectronics	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	3.3		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel			128KX16	128K	0 Cel	1,2,1,3	YES	TIN/TIN BISMUTH	YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified		TOP	2097152 bit	2.7 V	TOP BOOT BLOCK		e3/e6	40	260	NOR TYPE	.0001 Amp	20 mm		70 ns	2.7	YES
M28V440-150N1	STMicroelectronics	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	60 mA	262144 words	3.3		NO	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel			256KX16	256K	0 Cel	1,2,1,3	YES	TIN LEAD		DUAL	R-PDSO-G48			10000 Write/Erase Cycles		Not Qualified		BOTTOM	4194304 bit				e0			NOR TYPE	.000005 Amp			150 ns		NO
M29W800DXT70ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3		YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel			512KX16	512K	-40 Cel	1,2,1,15	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B48	3.6 V	1.2 mm		6 mm	Not Qualified		TOP	8388608 bit	2.7 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	9 mm	YES	70 ns	3	YES
M29F400B-55N1	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5		YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel			256KX16	256K	0 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	5.5 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified		BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		55 ns	5	YES
M29F400T-90XN5	STMicroelectronics	FLASH	OTHER	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	60 mA	262144 words	5		YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel			256KX16	256K	-20 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL	R-PDSO-G48			100000 Write/Erase Cycles		Not Qualified		TOP	4194304 bit				e0			NOR TYPE	.0001 Amp			90 ns		YES
M29F800DB55N3T	STMicroelectronics	FLASH	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	5		YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel			512KX16	512K	-40 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	5.5 V	1.2 mm		12 mm	Not Qualified		BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.00015 Amp	18.4 mm	YES	55 ns	5	YES
M29W800DXB45N1	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3.3		YES	3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel			512KX16	512K	0 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified		BOTTOM	8388608 bit	3 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm	YES	45 ns	3	YES
M28W160ECT90N6E	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	1048576 words	3		NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel			1MX16	1M	-40 Cel	8,31	YES	TIN/TIN BISMUTH		DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified		TOP	16777216 bit	2.7 V			e3/e6	NOT SPECIFIED	260	NOR TYPE	.000005 Amp	18.4 mm	YES	90 ns	3	NO
M29W400T-150N5TR	STMicroelectronics	FLASH	OTHER	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3.3		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		3-STATE	256KX16	256K	-20 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified		TOP	4194304 bit	2.7 V	TOP BOOT BLOCK		e0			NOR TYPE	.00005 Amp	18.4 mm		150 ns	2.7	YES
M39832-T12WNE6	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		20 mA	524288 words	3.3	EEPROM+FLASH		3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Other Memory ICs		.5 mm	85 Cel			512KX16	512K	-40 Cel			TIN LEAD		DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified	10 ms	TOP	8388608 bit	2.7 V			e0			NOR TYPE	.0001 Amp	18.4 mm		120 ns	2.7
M28W160ECB85N6E	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	1048576 words	3		NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel			1MX16	1M	-40 Cel	8,31	YES	TIN/TIN BISMUTH		DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified		BOTTOM	16777216 bit	2.7 V			e3/e6	NOT SPECIFIED	260	NOR TYPE	.000005 Amp	18.4 mm	YES	85 ns	3	NO
M28W320FCB10N6F	STMicroelectronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	2097152 words	3		NO	1.8/3.3,3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel			2MX16	2M	-40 Cel	8,63	YES	TIN/TIN BISMUTH		DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified		BOTTOM	33554432 bit	2.7 V			e3/e6	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	100 ns	3	NO
M59DR032C120N6	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words	1.8				16	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel			2MX16	2M	-40 Cel					DUAL	R-PDSO-G48	2.2 V	1.2 mm		12 mm	Not Qualified		TOP	33554432 bit	1.65 V						NOR TYPE		18.4 mm		120 ns	1.8
M28W640FCT10N1	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3				16	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel			4MX16	4M	0 Cel			TIN		DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified		TOP	67108864 bit	2.7 V	TOP BOOT BLOCK		e3			NOR TYPE		18.4 mm		100 ns	3
M29W400DB70ZA1E	STMicroelectronics	FLASH	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3		YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	70 Cel			256KX16	256K	0 Cel	1,2,1,7	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48	3.6 V	1.2 mm		6 mm	Not Qualified		BOTTOM	4194304 bit	2.7 V	BOTTOM BOOT BLOCK		e1			NOR TYPE	.0001 Amp	9 mm		70 ns	3	YES
M29F800DT55N6T	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	5		YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel			512KX16	512K	-40 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	5.5 V	1.2 mm		12 mm	Not Qualified		TOP	8388608 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.00015 Amp	18.4 mm	YES	55 ns	5	YES
M29W160EB70ZA6F	STMicroelectronics	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	1048576 words	3		YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel			1MX16	1M	-40 Cel	1,2,1,31	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48	3.6 V	1.2 mm		6 mm	Not Qualified		BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK		e1			NOR TYPE	.0001 Amp	8 mm	YES	70 ns	3	YES
M29W800DXT45ZA1	STMicroelectronics	FLASH	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3.3		YES	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	70 Cel			512KX16	512K	0 Cel	1,2,1,15	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B48	3.6 V	1.2 mm		6 mm	Not Qualified		TOP	8388608 bit	3 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	9 mm	YES	45 ns	3	YES
M29W800T-150N5RTR	STMicroelectronics	FLASH	OTHER	48	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	1048576 words			YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	16	Flash Memories		.5 mm	85 Cel	YES	3-STATE	1MX8	1M	-20 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified		TOP	8388608 bit	2.7 V			e0			NOR TYPE	.0001 Amp	18.4 mm		150 ns	3	YES
M28W160CB70N1F	STMicroelectronics	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3				16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	70 Cel			1MX16	1M	0 Cel			TIN		DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified		BOTTOM	16777216 bit	2.7 V			e3			NOR TYPE		18.4 mm		70 ns	3
M39832-B15WNE6T	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		20 mA	524288 words	3.3	EEPROM+FLASH		3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Other Memory ICs		.5 mm	85 Cel			512KX16	512K	-40 Cel			TIN LEAD		DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified	10 ms	BOTTOM	8388608 bit	2.7 V			e0			NOR TYPE	.0001 Amp	18.4 mm		150 ns	2.7
M58MR032C120ZC6	STMicroelectronics	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	50 mA	2097152 words	1.8		NO	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,8X14,40/20		Flash Memories		.5 mm	85 Cel			2MX16	2M	-40 Cel	8,63	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B48	2 V	1.2 mm		6.29 mm	Not Qualified		TOP	33554432 bit	1.7 V		4	e1			NOR TYPE	.00001 Amp	10.53 mm	YES	20 ns	1.8	NO
M29W800AT80N5T	STMicroelectronics	FLASH	OTHER	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3.3		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	20	.5 mm	85 Cel			512KX16	512K	-20 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified		TOP	8388608 bit	3 V	20 YEARS DATA RETENTION; TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		80 ns	3	YES
M29W400DB45N6T	STMicroelectronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3.3		YES	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel			256KX16	256K	-40 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified		BOTTOM	4194304 bit	3 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		45 ns	3	YES
M29F200T-90XN6R	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5				8	SMALL OUTLINE, THIN PROFILE		16			.5 mm	85 Cel			256KX8	256K	-40 Cel					DUAL	R-PDSO-G48	5.25 V	1.2 mm		12 mm	Not Qualified		TOP	2097152 bit	4.75 V						NOR TYPE		18.4 mm		90 ns	5
M29DW640F60N1F	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3				16	SMALL OUTLINE, THIN PROFILE		8			.5 mm	70 Cel			4MX16	4M	0 Cel			TIN/TIN BISMUTH		DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified		BOTTOM/TOP	67108864 bit	2.7 V	100,000 PROGRAM/ERASE CYCLES		e3/e6	40	260	NOR TYPE		18.4 mm		60 ns	3
M59DR008E100ZB1	STMicroelectronics	FLASH	COMMERCIAL	48	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	40 mA	524288 words	1.8		YES	1.8/2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		Flash Memories		.75 mm	70 Cel			512KX16	512K	0 Cel	8,15	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	S-PBGA-B48	2.2 V	1.2 mm		7 mm	Not Qualified		BOTTOM	8388608 bit	1.65 V		4	e1			NOR TYPE	.000005 Amp	7 mm	YES	100 ns	1.8	YES
M29F200B-55N3TR	STMicroelectronics	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	5		YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel			128KX16	128K	-40 Cel	1,2,1,3	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	5.5 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified		BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		55 ns	5	YES
M29F160BT90N1T	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	1048576 words	5		YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel			1MX16	1M	-40 Cel	1,2,1,31	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	5.5 V	1.2 mm		12 mm	Not Qualified		TOP	16777216 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.00015 Amp	18.4 mm		90 ns	5	YES
M28W640FCB90N1T	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3				16	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel			4MX16	4M	0 Cel			TIN		DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified		BOTTOM	67108864 bit	2.7 V	BOTTOM BOOT BLOCK		e3			NOR TYPE		18.4 mm		90 ns	3
M29DW640F70ZE6F	STMicroelectronics	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	4194304 words	3		YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel			4MX16	4M	-40 Cel	16,126	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48	3.6 V	1.2 mm		6 mm	Not Qualified		BOTTOM/TOP	67108864 bit	2.7 V	100,000 PROGRAM/ERASE CYCLES	4/8	e1			NOR TYPE	.0001 Amp	8 mm	YES	70 ns	3	YES
M58MR064D100ZC6	STMicroelectronics	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	50 mA	4194304 words	1.8		NO	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,8X14,40/20		Flash Memories		.5 mm	85 Cel			4MX16	4M	-40 Cel	8,127	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B48	2 V	1.2 mm		6.29 mm	Not Qualified		BOTTOM	67108864 bit	1.65 V		4	e1			NOR TYPE	.000005 Amp	10.53 mm	YES	14 ns	1.8	NO
M29F200B-55N1RTR	STMicroelectronics	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	5		YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel	YES		128KX16	128K	0 Cel	1,2,1,3	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	5.5 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified		BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		55 ns	5	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.