54 Flash Memory 13

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Page Size (words)	JESD-609 Code	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
M59MR032D120ZC6	STMicroelectronics	FLASH	INDUSTRIAL	54	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	50 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA54,10X12,40/20		Flash Memories	.5 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES		BOTTOM	R-PBGA-B54	2 V	1.2 mm	7 mm	Not Qualified	BOTTOM	33554432 bit	1.65 V	4		NOR TYPE	.000005 Amp	12 mm	YES	18 ns	1.8	YES
M59MR032C100ZC6	STMicroelectronics	FLASH	INDUSTRIAL	54	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	50 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA54,10X12,40/20		Flash Memories	.5 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES		BOTTOM	R-PBGA-B54	2 V	1.2 mm	7 mm	Not Qualified	TOP	33554432 bit	1.65 V	4		NOR TYPE	.000005 Amp	12 mm	YES	14 ns	1.8	YES
M59MR032D100ZC6T	STMicroelectronics	FLASH	INDUSTRIAL	54	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	50 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA54,10X12,40/20		Flash Memories	.5 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES		BOTTOM	R-PBGA-B54	2 V	1.2 mm	7 mm	Not Qualified	BOTTOM	33554432 bit	1.65 V	4		NOR TYPE	.000005 Amp	12 mm	YES	14 ns	1.8	YES
M59MR032C120ZC6T	STMicroelectronics	FLASH	INDUSTRIAL	54	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	50 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA54,10X12,40/20		Flash Memories	.5 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES		BOTTOM	R-PBGA-B54	2 V	1.2 mm	7 mm	Not Qualified	TOP	33554432 bit	1.65 V	4		NOR TYPE	.000005 Amp	12 mm	YES	18 ns	1.8	YES
M59MR032D100ZC6	STMicroelectronics	FLASH	INDUSTRIAL	54	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	50 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA54,10X12,40/20		Flash Memories	.5 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES		BOTTOM	R-PBGA-B54	2 V	1.2 mm	7 mm	Not Qualified	BOTTOM	33554432 bit	1.65 V	4		NOR TYPE	.000005 Amp	12 mm	YES	14 ns	1.8	YES
M59MR032D120ZC6T	STMicroelectronics	FLASH	INDUSTRIAL	54	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	50 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA54,10X12,40/20		Flash Memories	.5 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES		BOTTOM	R-PBGA-B54	2 V	1.2 mm	7 mm	Not Qualified	BOTTOM	33554432 bit	1.65 V	4		NOR TYPE	.000005 Amp	12 mm	YES	18 ns	1.8	YES
M59MR032C120ZC6	STMicroelectronics	FLASH	INDUSTRIAL	54	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	50 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA54,10X12,40/20		Flash Memories	.5 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES		BOTTOM	R-PBGA-B54	2 V	1.2 mm	7 mm	Not Qualified	TOP	33554432 bit	1.65 V	4		NOR TYPE	.000005 Amp	12 mm	YES	18 ns	1.8	YES
M59MR032C100ZC6T	STMicroelectronics	FLASH	INDUSTRIAL	54	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	50 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA54,10X12,40/20		Flash Memories	.5 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES		BOTTOM	R-PBGA-B54	2 V	1.2 mm	7 mm	Not Qualified	TOP	33554432 bit	1.65 V	4		NOR TYPE	.000005 Amp	12 mm	YES	14 ns	1.8	YES
K8P5616UZB-PI4E0	Samsung	FLASH	INDUSTRIAL	54	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS			16777216 words	3			16	SMALL OUTLINE, THIN PROFILE		8		.5 mm	85 Cel	16MX16	16M	-40 Cel				DUAL	R-PDSO-G54	3.6 V	1.2 mm	14 mm	Not Qualified	BOTTOM/TOP	268435456 bit	2.7 V			NOR TYPE		18.4 mm		80 ns	3
K8P5616UZB-PE4E0	Samsung	FLASH	OTHER	54	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS			16777216 words	3			16	SMALL OUTLINE, THIN PROFILE		8		.5 mm	85 Cel	16MX16	16M	-25 Cel				DUAL	R-PDSO-G54	3.6 V	1.2 mm	14 mm	Not Qualified	BOTTOM/TOP	268435456 bit	2.7 V			NOR TYPE		18.4 mm		80 ns	3
K8P5616UZB-PC4E0	Samsung	FLASH	COMMERCIAL	54	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS			16777216 words	3			16	SMALL OUTLINE, THIN PROFILE		8		.5 mm	70 Cel	16MX16	16M	0 Cel				DUAL	R-PDSO-G54	3.6 V	1.2 mm	14 mm	Not Qualified	BOTTOM/TOP	268435456 bit	2.7 V			NOR TYPE		18.4 mm		80 ns	3
MT28S4M16LCTG-12	Micron Technology	FLASH	COMMERCIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	256K	115 mA	4194304 words	3.3	NO	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		Flash Memories	.8 mm	70 Cel	4MX16	4M	0 Cel	16	YES	TIN LEAD	DUAL	R-PDSO-G54	3.6 V	1.2 mm	10.16 mm	Not Qualified		67108864 bit	3 V		e0	NOR TYPE	.000001 Amp	22.22 mm		9 ns	3.3	NO
MT28S4M16LCTG-10	Micron Technology	FLASH	COMMERCIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	256K	120 mA	4194304 words	3.3	NO	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		Flash Memories	.8 mm	70 Cel	4MX16	4M	0 Cel	16	YES	TIN LEAD	DUAL	R-PDSO-G54	3.6 V	1.2 mm	10.16 mm	Not Qualified		67108864 bit	3 V		e0	NOR TYPE	.000001 Amp	22.22 mm		7 ns	3.3	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.