64 Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
S70GL02GS12FHVV20	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	105 Cel		128MX16	128M	-40 Cel					BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm		11 mm			2147483648 bit	2.7 V							13 mm		120 ns	3
S29GL512S12DHIV10	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	67108864 words	3	YES	3/3.3	8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		64MX8	64M	-40 Cel	512	YES	TIN SILVER COPPER	YES	BOTTOM	S-PBGA-B64	3	3.6 V	1.4 mm		9 mm	Not Qualified		536870912 bit	2.7 V	16	e1	30	260	NOR TYPE	.0001 Amp	9 mm	YES	120 ns	2.7	YES
S29GL512T10FHI030	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		32MX16	32M	-40 Cel					BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm		11 mm			536870912 bit	2.7 V							13 mm		100 ns	2.7
S29GL512T12DHN020	Infineon Technologies	FLASH	AUTOMOTIVE	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	125 Cel		32MX16	32M	-40 Cel					BOTTOM	S-PBGA-B64	3	3.6 V	1.4 mm		9 mm			536870912 bit	2.7 V							9 mm		120 ns	2.7
S29GL512T12DHVV10	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	105 Cel		32MX16	32M	-40 Cel					BOTTOM	S-PBGA-B64	3	3.6 V	1.4 mm		9 mm			536870912 bit	2.7 V					NOR TYPE		9 mm		120 ns	2.7
S70GL02GS11FHA013	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			134217728 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		128MX16	128M	-40 Cel					BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm		11 mm			2147483648 bit	2.7 V							13 mm		110 ns	3
S70GL02GS12FHVV23	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	105 Cel		128MX16	128M	-40 Cel					BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm		11 mm			2147483648 bit	2.7 V							13 mm		120 ns	3
S70GL02GS12FHVV10	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	105 Cel		128MX16	128M	-40 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.4 mm		11 mm		BOTTOM/TOP	2147483648 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		13 mm		120 ns	3
S70GL02GS11FHB023	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			134217728 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	105 Cel		128MX16	128M	-40 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.4 mm		11 mm		BOTTOM/TOP	2147483648 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		13 mm		110 ns	3
S70GL02GT11FHB023	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	128K	160 mA	134217728 words	3	NO		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		0.2	1 mm	105 Cel	3-STATE	128MX16	128M	-40 Cel	2K	NO		YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles	11 mm			2147483648 bit	2.7 V	16/32				NOR TYPE	.0004 Amp	13 mm	Y	110 ns	3	YES
S70GL02GS11FHI023	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	160 mA	134217728 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		128MX16	128M	-40 Cel	2K	YES		YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm		11 mm	Not Qualified	BOTTOM/TOP	2147483648 bit	2.7 V	16/32				NOR TYPE	.0002 Amp	13 mm	YES	110 ns	3	YES
S70GL02GT12FHVV20	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	160 mA	134217728 words	3	NO		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		0.2	1 mm	105 Cel	3-STATE	128MX16	128M	-40 Cel	2K	NO		YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles	11 mm			2147483648 bit	2.7 V	16/32				NOR TYPE	.0004 Amp	13 mm	Y	120 ns	3	YES
S70GL02GS12FHBV23	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			134217728 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	105 Cel		128MX16	128M	-40 Cel					BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm		11 mm			2147483648 bit	2.7 V							13 mm		120 ns	3
S29NS512RAABJW003	Infineon Technologies	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	64K	80 mA	33554432 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,8X14,20		Flash Memories		.5 mm	85 Cel		32MX16	32M	-25 Cel	512	YES		YES	BOTTOM	R-PBGA-B64		1.95 V	1 mm		8 mm	Not Qualified		536870912 bit	1.7 V					NOR TYPE	.00004 Amp	9.2 mm	YES	80 ns	1.8	NO
S70GL02GP11FACR23	Infineon Technologies	FLASH	OTHER	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		128MX16	128M	0 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.4 mm		11 mm	Not Qualified		2147483648 bit	3 V			NOT SPECIFIED	NOT SPECIFIED			13 mm			3
S70GL02GT12FHBV10	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	128K	160 mA	134217728 words	3	NO		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		0.2	1 mm	105 Cel	3-STATE	128MX16	128M	-40 Cel	2K	NO		YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm	100000 Write/Erase Cycles	11 mm			2147483648 bit	2.7 V	16/32		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0004 Amp	13 mm	Y	120 ns	3	YES
S29NS512R0PBJW000	Infineon Technologies	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	64K	80 mA	33554432 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,8X14,20		Flash Memories		.5 mm	85 Cel		32MX16	32M	-25 Cel	512	YES		YES	BOTTOM	R-PBGA-B64		1.95 V	1 mm		8 mm	Not Qualified		536870912 bit	1.7 V					NOR TYPE	.00004 Amp	9.2 mm	YES	80 ns	1.8	NO
S70GL02GP11FACR10	Infineon Technologies	FLASH	OTHER	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		128MX16	128M	0 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.4 mm		11 mm	Not Qualified		2147483648 bit	3 V			NOT SPECIFIED	NOT SPECIFIED			13 mm			3
S29GL512T10FHI013	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		32MX16	32M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm		11 mm			536870912 bit	2.7 V		e1	30	260			13 mm		100 ns	2.7
S70GL02GS120FHIV10	Infineon Technologies	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	160 mA	134217728 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		128MX16	128M	-40 Cel	2K	YES		YES	BOTTOM	S-PBGA-B64						Not Qualified		2147483648 bit		16/32				NOR TYPE	.0002 Amp		YES	120 ns		YES
S29GL512T10FAI010	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		32MX16	32M	-40 Cel					BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm		11 mm			536870912 bit	2.7 V							13 mm		100 ns	2.7
S29GL512T11FHIV30	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		32MX16	32M	-40 Cel					BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm		11 mm			536870912 bit	2.7 V							13 mm		110 ns	2.7
S70GL02GT11FAI030	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	160 mA	134217728 words	3	NO		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		0.2	1 mm	85 Cel	3-STATE	128MX16	128M	-40 Cel	2K	NO	TIN LEAD	YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm	100000 Write/Erase Cycles	11 mm			2147483648 bit	2.7 V	16/32	e0			NOR TYPE	.0002 Amp	13 mm	Y	110 ns	3	YES
S29NS128P0PBJW000	Infineon Technologies	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		8MX16	8M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B64	3	1.95 V	1 mm		6.2 mm		TOP	134217728 bit	1.7 V		e1	40	260	NOR TYPE		7.7 mm		80 ns	1.8
S29NS128P0SBJW003	Infineon Technologies	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	80 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel		8MX16	8M	-25 Cel	4,127	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	1.95 V	1 mm		6.2 mm	Not Qualified	TOP	134217728 bit	1.7 V		e1	40	260	NOR TYPE	.00007 Amp	7.7 mm	YES	80 ns	1.8	YES
S29NS512P0SBJW000	Infineon Technologies	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	64K	80 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,8X14,20		Flash Memories		.5 mm	85 Cel		32MX16	32M	-25 Cel	512	YES	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM	R-PBGA-B64		1.95 V	1 mm		8 mm	Not Qualified		536870912 bit	1.7 V		e1			NOR TYPE	.00007 Amp	9.2 mm	YES	80 ns	1.8	YES
S29NS512R0PBJW003	Infineon Technologies	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	64K	80 mA	33554432 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,8X14,20		Flash Memories		.5 mm	85 Cel		32MX16	32M	-25 Cel	512	YES		YES	BOTTOM	R-PBGA-B64		1.95 V	1 mm		8 mm	Not Qualified		536870912 bit	1.7 V					NOR TYPE	.00004 Amp	9.2 mm	YES	80 ns	1.8	NO
S70GL02GP11FFCR20	Infineon Technologies	FLASH	OTHER	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		128MX16	128M	0 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.4 mm		11 mm	Not Qualified		2147483648 bit	3 V			NOT SPECIFIED	NOT SPECIFIED			13 mm			3
S70GL02GS12FHAV13	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			134217728 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		128MX16	128M	-40 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.4 mm		11 mm		BOTTOM/TOP	2147483648 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		13 mm		120 ns	3
S70GL02GS110FHI023	Infineon Technologies	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	160 mA	134217728 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		128MX16	128M	-40 Cel	2K	YES		YES	BOTTOM	S-PBGA-B64						Not Qualified		2147483648 bit		16/32				NOR TYPE	.0002 Amp		YES	110 ns		YES
S29GL512T10FHI010	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		32MX16	32M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm		11 mm			536870912 bit	2.7 V		e1	30	260			13 mm		100 ns	2.7
S29NS512P0PBJW03	Infineon Technologies	FLASH	COMMERCIAL EXTENDED	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		32MX16	32M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B64		1.95 V	1 mm		8 mm	Not Qualified	BOTTOM/TOP	536870912 bit	1.7 V		e1			NOR TYPE		9.2 mm		80 ns	1.8
S70GL02GT12FHVV13	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	160 mA	134217728 words	3	NO		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		0.2	1 mm	105 Cel	3-STATE	128MX16	128M	-40 Cel	2K	NO		YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm	100000 Write/Erase Cycles	11 mm			2147483648 bit	2.7 V	16/32		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0004 Amp	13 mm	Y	120 ns	3	YES
S29NS512PABBJW00	Infineon Technologies	FLASH	COMMERCIAL EXTENDED	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		32MX16	32M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B64		1.95 V	1 mm		8 mm	Not Qualified	BOTTOM/TOP	536870912 bit	1.7 V		e1			NOR TYPE		9.2 mm		80 ns	1.8
S29GL512T11DHV023	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	105 Cel		32MX16	32M	-40 Cel					BOTTOM	S-PBGA-B64	3	3.6 V	1.4 mm		9 mm			536870912 bit	2.7 V							9 mm		110 ns	2.7
S70GL02GT11FHB020	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	128K	160 mA	134217728 words	3	NO		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		0.2	1 mm	105 Cel	3-STATE	128MX16	128M	-40 Cel	2K	NO		YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles	11 mm			2147483648 bit	2.7 V	16/32				NOR TYPE	.0004 Amp	13 mm	Y	110 ns	3	YES
S29NS512P0SBJW30	Infineon Technologies	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B64		1.95 V	1 mm		8 mm	Not Qualified		536870912 bit	1.7 V					NOR TYPE		9.2 mm		80 ns	1.8
S70GL02GT11FHB013	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	128K	160 mA	134217728 words	3	NO		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		0.2	1 mm	105 Cel	3-STATE	128MX16	128M	-40 Cel	2K	NO		YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles	11 mm			2147483648 bit	2.7 V	16/32				NOR TYPE	.0004 Amp	13 mm	Y	110 ns	3	YES
S70GL02GT11FHI023	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	160 mA	134217728 words	3	NO		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		0.2	1 mm	85 Cel	3-STATE	128MX16	128M	-40 Cel	2K	NO		YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles	11 mm			2147483648 bit	2.7 V	16/32				NOR TYPE	.0002 Amp	13 mm	Y	110 ns	3	YES
S29GL512S11DHI020	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	67108864 words	3	YES	3/3.3	8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		64MX8	64M	-40 Cel	512	YES	TIN SILVER COPPER	YES	BOTTOM	S-PBGA-B64	3	3.6 V	1.4 mm		9 mm	Not Qualified		536870912 bit	2.7 V	16	e1	30	260	NOR TYPE	.0001 Amp	9 mm	YES	110 ns	2.7	YES
S70GL02GT12FHAV20	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	128K	160 mA	134217728 words	3	NO		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		0.2	1 mm	85 Cel	3-STATE	128MX16	128M	-40 Cel	2K	NO		YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm	100000 Write/Erase Cycles	11 mm			2147483648 bit	2.7 V	16/32		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0002 Amp	13 mm	Y	120 ns	3	YES
S29NS512PABBJW03	Infineon Technologies	FLASH	COMMERCIAL EXTENDED	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		32MX16	32M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B64		1.95 V	1 mm		8 mm	Not Qualified	BOTTOM/TOP	536870912 bit	1.7 V		e1			NOR TYPE		9.2 mm		80 ns	1.8
S29NS512P0PBJW003	Infineon Technologies	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	64K	80 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,8X14,20		Flash Memories		.5 mm	85 Cel		32MX16	32M	-25 Cel	512	YES	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM	R-PBGA-B64		1.95 V	1 mm		8 mm	Not Qualified		536870912 bit	1.7 V		e1	40	260	NOR TYPE	.00007 Amp	9.2 mm	YES	80 ns	1.8	YES
S29NS512P0PBJW000	Infineon Technologies	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	64K	80 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,8X14,20		Flash Memories		.5 mm	85 Cel		32MX16	32M	-25 Cel	512	YES	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM	R-PBGA-B64		1.95 V	1 mm		8 mm	Not Qualified		536870912 bit	1.7 V		e1	40	260	NOR TYPE	.00007 Amp	9.2 mm	YES	80 ns	1.8	YES
S70GL02GS12FHBV13	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			134217728 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	105 Cel		128MX16	128M	-40 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.4 mm		11 mm		BOTTOM/TOP	2147483648 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		13 mm		120 ns	3
S29GL512T10FHI033	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		32MX16	32M	-40 Cel					BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm		11 mm			536870912 bit	2.7 V							13 mm		100 ns	2.7
S70GL02GS11FHA023	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			134217728 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		128MX16	128M	-40 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.4 mm		11 mm		BOTTOM/TOP	2147483648 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		13 mm		110 ns	3
S29NS512RAABJW000	Infineon Technologies	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	64K	80 mA	33554432 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,8X14,20		Flash Memories		.5 mm	85 Cel		32MX16	32M	-25 Cel	512	YES		YES	BOTTOM	R-PBGA-B64		1.95 V	1 mm		8 mm	Not Qualified		536870912 bit	1.7 V					NOR TYPE	.00004 Amp	9.2 mm	YES	80 ns	1.8	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.