80 Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
M58BW32FB4ZA3T	STMicroelectronics	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS	4K,2K,16K	50 mA	524288 words	3.3	NO	3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories	1 mm	125 Cel		512KX32	512K	-40 Cel	4,8,62	YES			BOTTOM	R-PBGA-B80		3.6 V	1.7 mm	10 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V		4				NOR TYPE	.00015 Amp	12 mm	YES	45 ns	3.3	NO
AM29PDL128G70PEI	Spansion	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	45 mA	4194304 words	3	YES	3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40	16	Flash Memories	1 mm	85 Cel		4MX32	4M	-40 Cel	16,254	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B80	3	3.6 V	1.4 mm	10 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V		4/8	e0		260	NOR TYPE	.000005 Amp	15 mm	YES	70 ns	3	YES
S29PL127J70BAI000	Cypress Semiconductor	FLASH	INDUSTRIAL	80	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA80,8X12,32		Flash Memories	.8 mm	85 Cel		8MX16	8M	-40 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B80		3.6 V	1 mm	8 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	11 mm	YES	70 ns	3	YES
M58BW016FB7T3T	STMicroelectronics	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	40 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	FLATPACK	QFP80,.7X.9,32		Flash Memories	.8 mm	125 Cel		512KX32	512K	-40 Cel	8,31	YES			QUAD	R-PQFP-G80		3.6 V	3.4 mm	14 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	20 mm	YES	70 ns	3	NO
M58BW32FB4ZA3F	STMicroelectronics	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS	4K,2K,16K	50 mA	524288 words	3.3	NO	3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories	1 mm	125 Cel		512KX32	512K	-40 Cel	4,8,62	YES			BOTTOM	R-PBGA-B80		3.6 V	1.7 mm	10 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V		4				NOR TYPE	.00015 Amp	12 mm	YES	45 ns	3.3	NO
S29PL127J60BAI000	Cypress Semiconductor	FLASH	INDUSTRIAL	80	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA80,8X12,32		Flash Memories	.8 mm	85 Cel		8MX16	8M	-40 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B80		3.6 V	1 mm	8 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	11 mm	YES	60 ns	3	YES
S29CD032J1JFAM010	Cypress Semiconductor	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	1048576 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories	1 mm	125 Cel		1MX32	1M	-40 Cel	16,62	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B80	3	2.75 V	1.4 mm	11 mm	Not Qualified	BOTTOM	33554432 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		e0		260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	2.7	YES
M58BW016FB7T3F	STMicroelectronics	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	40 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	FLATPACK	QFP80,.7X.9,32		Flash Memories	.8 mm	125 Cel		512KX32	512K	-40 Cel	8,31	YES			QUAD	R-PQFP-G80		3.6 V	3.4 mm	14 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	20 mm	YES	70 ns	3	NO
AM29PDL128G70PEF	Spansion	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	45 mA	4194304 words	3	YES	3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40	16	Flash Memories	1 mm	85 Cel		4MX32	4M	-40 Cel	16,254	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B80	3	3.6 V	1.4 mm	10 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V		4/8	e1	40	260	NOR TYPE	.000005 Amp	15 mm	YES	70 ns	3	YES
S29PL127J70BFI000	Cypress Semiconductor	FLASH	INDUSTRIAL	80	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA80,8X12,32		Flash Memories	.8 mm	85 Cel		8MX16	8M	-40 Cel	16,254	YES	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	YES	BOTTOM	R-PBGA-B80	3	3.6 V	1 mm	8 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8	e1	40	260	NOR TYPE	.000005 Amp	11 mm	YES	70 ns	3	YES
TMS28F033-25BPAFE	Texas Instruments	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS			262144 words	5	NO	3.3/5,5	16	FLATPACK	QFP80,.7X.9,32	16	Flash Memories	.8 mm	85 Cel	3-STATE	256KX16	256K	-40 Cel	7	YES		YES	QUAD	R-PQFP-G80		5.5 V	3.1 mm	14 mm	Not Qualified		4194304 bit	4.5 V	CAN ALSO BE CONFIGURED AS 128K X 32			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		20 mm		29 ns	12	NO
TMS28F033-33BPAFE	Texas Instruments	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS			262144 words	5	NO	3.3/5,5	16	FLATPACK	QFP80,.7X.9,32	16	Flash Memories	.8 mm	85 Cel	3-STATE	256KX16	256K	-40 Cel	7	YES		YES	QUAD	R-PQFP-G80		5.5 V	3.1 mm	14 mm	Not Qualified		4194304 bit	4.5 V	CAN ALSO BE CONFIGURED AS 128K X 32			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		20 mm		29 ns	12	NO
TMS28F033-25BPAFQ	Texas Instruments	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS			262144 words	5	NO	3.3/5,5	16	FLATPACK	QFP80,.7X.9,32	16	Flash Memories	.8 mm	125 Cel	3-STATE	256KX16	256K	-40 Cel	7	YES		YES	QUAD	R-PQFP-G80		5.5 V	3.1 mm	14 mm	Not Qualified		4194304 bit	4.5 V	CAN ALSO BE CONFIGURED AS 128K X 32			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		20 mm		29 ns	12	NO
TMS28F033-25BPAFL	Texas Instruments	FLASH	COMMERCIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS			262144 words	5	NO	3.3/5,5	16	FLATPACK	QFP80,.7X.9,32	16	Flash Memories	.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	7	YES		YES	QUAD	R-PQFP-G80		5.5 V	3.1 mm	14 mm	Not Qualified		4194304 bit	4.5 V	CAN ALSO BE CONFIGURED AS 128K X 32			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		20 mm		29 ns	12	NO
TMS28F033-33BPAFQ	Texas Instruments	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS			262144 words	5	NO	3.3/5,5	16	FLATPACK	QFP80,.7X.9,32	16	Flash Memories	.8 mm	125 Cel	3-STATE	256KX16	256K	-40 Cel	7	YES		YES	QUAD	R-PQFP-G80		5.5 V	3.1 mm	14 mm	Not Qualified		4194304 bit	4.5 V	CAN ALSO BE CONFIGURED AS 128K X 32			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		20 mm		29 ns	12	NO
TMS28F033-33BPAFL	Texas Instruments	FLASH	COMMERCIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS			262144 words	5	NO	3.3/5,5	16	FLATPACK	QFP80,.7X.9,32	16	Flash Memories	.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	7	YES		YES	QUAD	R-PQFP-G80		5.5 V	3.1 mm	14 mm	Not Qualified		4194304 bit	4.5 V	CAN ALSO BE CONFIGURED AS 128K X 32			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		20 mm		29 ns	12	NO
M58BW016BT100ZA3F	STMicroelectronics	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories	1 mm	125 Cel		512KX32	512K	-40 Cel	8,31	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B80		3.6 V	1.7 mm	10 mm	Not Qualified	TOP	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e1			NOR TYPE	.000005 Amp	12 mm	YES	100 ns	3	NO
M58BW016DT80T3	STMicroelectronics	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	FLATPACK	QFP80,.7X.9,32		Flash Memories	.8 mm	125 Cel		512KX32	512K	-40 Cel	8,31	YES	TIN LEAD		QUAD	R-PQFP-G80		3.6 V	3.4 mm	14 mm	Not Qualified	TOP	16777216 bit	2.7 V	TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	20 mm	YES	80 ns	3	NO
M58BW032DB60T6T	STMicroelectronics	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	4K,2K,16K		1048576 words	3.3	NO	3.3	32	FLATPACK	QFP80,.7X.9,32		Flash Memories	.8 mm	85 Cel		1MX32	1M	-40 Cel	4,8,62	YES			QUAD	R-PQFP-G80		3.6 V	3.4 mm	14 mm	Not Qualified	BOTTOM	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE; BOTTOM BOOT BLOCK	4				NOR TYPE	.0001 Amp	20 mm	YES	60 ns	3.3	NO
M58BW016BTXXZA3	STMicroelectronics	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			524288 words	3			32	GRID ARRAY, LOW PROFILE				1 mm	125 Cel		512KX32	512K	-40 Cel					BOTTOM	R-PBGA-B80		3.6 V	1.7 mm	10 mm	Not Qualified	TOP	16777216 bit	2.7 V	TOP BOOT BLOCK					NOR TYPE		12 mm		80 ns	3
M58BW016DB80ZA3	STMicroelectronics	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories	1 mm	125 Cel		512KX32	512K	-40 Cel	8,31	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B80		3.6 V	1.7 mm	10 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK		e1			NOR TYPE	.000005 Amp	12 mm	YES	80 ns	3	NO
M58BW032DB55T3	STMicroelectronics	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		4K,2K,16K		1048576 words	3.3	NO	3.3	32	FLATPACK	QFP80,.7X.9,32		Flash Memories	.8 mm	125 Cel		1MX32	1M	-40 Cel	4,8,62	YES			QUAD	R-PQFP-G80					Not Qualified	BOTTOM	33554432 bit			4				NOR TYPE	.0001 Amp		YES	55 ns		NO
M58BW016DTXXT3T	STMicroelectronics	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3			32	FLATPACK				.8 mm	125 Cel		512KX32	512K	-40 Cel					QUAD	R-PQFP-G80		3.6 V	3.4 mm	14 mm	Not Qualified	TOP	16777216 bit	2.7 V	TOP BOOT BLOCK					NOR TYPE		20 mm		80 ns	3
M58BW016FB7ZA3T	STMicroelectronics	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	40 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories	1 mm	125 Cel		512KX32	512K	-40 Cel	8,31	YES			BOTTOM	R-PBGA-B80	1	3.6 V	1.6 mm	10 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK					NOR TYPE	.000005 Amp	12 mm	YES	70 ns	3	NO
M58BW032DT60T3	STMicroelectronics	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		4K,2K,16K		1048576 words	3.3	NO	3.3	32	FLATPACK	QFP80,.7X.9,32		Flash Memories	.8 mm	125 Cel		1MX32	1M	-40 Cel	4,8,62	YES			QUAD	R-PQFP-G80					Not Qualified	TOP	33554432 bit			4				NOR TYPE	.0001 Amp		YES	60 ns		NO
M58BW016BB100ZA6FT	STMicroelectronics	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories	1 mm	85 Cel		512KX32	512K	-40 Cel	8,31	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B80		3.6 V	1.7 mm	10 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		e1			NOR TYPE	.000005 Amp	12 mm	YES	100 ns	3	NO
M58BW016FB80ZA3FT	STMicroelectronics	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories	1 mm	125 Cel		512KX32	512K	-40 Cel	8,31	YES			BOTTOM	R-PBGA-B80		3.6 V	1.6 mm	10 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	12 mm	YES	80 ns	3	NO
M58BW016DB7ZA3FF	STMicroelectronics	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories	1 mm	125 Cel		512KX32	512K	-40 Cel	8,31	YES			BOTTOM	R-PBGA-B80		3.6 V	1.6 mm	10 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	12 mm	YES	70 ns	3	NO
M58BW032BT60ZA6	STMicroelectronics	FLASH	INDUSTRIAL	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,2K,16K		1048576 words	3.3	NO	3.3	32	GRID ARRAY	BGA80,8X10,40		Flash Memories	1 mm	85 Cel		1MX32	1M	-40 Cel	4,8,62	YES			BOTTOM	R-PBGA-B80					Not Qualified	TOP	33554432 bit			4				NOR TYPE	.0001 Amp		YES	60 ns		NO
M58BW016FB70ZA3FF	STMicroelectronics	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories	1 mm	125 Cel		512KX32	512K	-40 Cel	8,31	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B80		3.6 V	1.6 mm	10 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		e1			NOR TYPE	.000005 Amp	12 mm	YES	70 ns	3	NO
M58BW032DT45T6T	STMicroelectronics	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	4K,2K,16K		1048576 words	3.3	NO	3.3	32	FLATPACK	QFP80,.7X.9,32		Flash Memories	.8 mm	85 Cel		1MX32	1M	-40 Cel	4,8,62	YES			QUAD	R-PQFP-G80		3.6 V	3.4 mm	14 mm	Not Qualified	TOP	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE; TOP BOOT BLOCK	4				NOR TYPE	.0001 Amp	20 mm	YES	45 ns	3.3	NO
M58BW016DT100ZA6F	STMicroelectronics	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories	1 mm	85 Cel		512KX32	512K	-40 Cel	8,31	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B80		3.6 V	1.7 mm	10 mm	Not Qualified	TOP	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e1			NOR TYPE	.000005 Amp	12 mm	YES	100 ns	3	NO
M58BF008100D3T	STMicroelectronics	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS			262144 words	5			32	FLATPACK				.8 mm	125 Cel		256KX32	256K	-40 Cel					QUAD	R-PQFP-G80		5.5 V	3.4 mm	14 mm	Not Qualified		8388608 bit	4.5 V						NOR TYPE		20 mm		20 ns	5
M58BW032DB55ZA3	STMicroelectronics	FLASH	AUTOMOTIVE	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,2K,16K		1048576 words	3.3	NO	3.3	32	GRID ARRAY	BGA80,8X10,40		Flash Memories	1 mm	125 Cel		1MX32	1M	-40 Cel	4,8,62	YES			BOTTOM	R-PBGA-B80					Not Qualified	BOTTOM	33554432 bit			4				NOR TYPE	.0001 Amp		YES	55 ns		NO
M58BW016FT80ZA3FF	STMicroelectronics	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	40 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories	1 mm	125 Cel		512KX32	512K	-40 Cel	8,31	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B80		3.6 V	1.6 mm	10 mm	Not Qualified	TOP	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e1			NOR TYPE	.000005 Amp	12 mm	YES	80 ns	3	NO
M58BW016BT80ZA3FT	STMicroelectronics	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories	1 mm	125 Cel		512KX32	512K	-40 Cel	8,31	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B80		3.6 V	1.7 mm	10 mm	Not Qualified	TOP	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e1			NOR TYPE	.000005 Amp	12 mm	YES	80 ns	3	NO
M58BW016BT90ZA3FT	STMicroelectronics	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories	1 mm	125 Cel		512KX32	512K	-40 Cel	8,31	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B80		3.6 V	1.7 mm	10 mm	Not Qualified	TOP	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e1			NOR TYPE	.000005 Amp	12 mm	YES	90 ns	3	NO
M58BW32FT5ZA3F	STMicroelectronics	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS	4K,2K,16K	50 mA	524288 words	2.7	NO	3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories	1 mm	125 Cel		512KX32	512K	-40 Cel	4,8,62	YES			BOTTOM	R-PBGA-B80		3.3 V	1.7 mm	10 mm	Not Qualified	TOP	16777216 bit	2.5 V		4				NOR TYPE	.00015 Amp	12 mm	YES	55 ns	3.3	NO
M58BW016BT100ZA3	STMicroelectronics	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories	1 mm	125 Cel		512KX32	512K	-40 Cel	8,31	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B80		3.6 V	1.7 mm	10 mm	Not Qualified	TOP	16777216 bit	2.7 V	TOP BOOT BLOCK		e1			NOR TYPE	.000005 Amp	12 mm	YES	100 ns	3	NO
M58BW016DT70ZA3FF	STMicroelectronics	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories	1 mm	125 Cel		512KX32	512K	-40 Cel	8,31	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B80		3.6 V	1.6 mm	10 mm	Not Qualified	TOP	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e1			NOR TYPE	.000005 Amp	12 mm	YES	70 ns	3	NO
M58BF008D90ZA3T	STMicroelectronics	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			262144 words	5			32	GRID ARRAY, LOW PROFILE				1 mm	125 Cel		256KX32	256K	-40 Cel					BOTTOM	R-PBGA-B80		5.5 V	1.7 mm	10 mm	Not Qualified		8388608 bit	4.5 V						NOR TYPE		12 mm		90 ns	5
M58BW016DB70T3FT	STMicroelectronics	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	FLATPACK	QFP80,.7X.9,32		Flash Memories	.8 mm	125 Cel		512KX32	512K	-40 Cel	8,31	YES	TIN LEAD		QUAD	R-PQFP-G80		3.6 V	3.4 mm	14 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	20 mm	YES	70 ns	3	NO
M58BW032DT60T6T	STMicroelectronics	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	4K,2K,16K		1048576 words	3.3	NO	3.3	32	FLATPACK	QFP80,.7X.9,32		Flash Memories	.8 mm	85 Cel		1MX32	1M	-40 Cel	4,8,62	YES			QUAD	R-PQFP-G80		3.6 V	3.4 mm	14 mm	Not Qualified	TOP	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE; TOP BOOT BLOCK	4				NOR TYPE	.0001 Amp	20 mm	YES	60 ns	3.3	NO
M58BW016BT100ZA3FT	STMicroelectronics	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories	1 mm	125 Cel		512KX32	512K	-40 Cel	8,31	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B80		3.6 V	1.7 mm	10 mm	Not Qualified	TOP	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e1			NOR TYPE	.000005 Amp	12 mm	YES	100 ns	3	NO
M58BW032DT45T3	STMicroelectronics	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		4K,2K,16K		1048576 words	3.3	NO	3.3	32	FLATPACK	QFP80,.7X.9,32		Flash Memories	.8 mm	125 Cel		1MX32	1M	-40 Cel	4,8,62	YES			QUAD	R-PQFP-G80					Not Qualified	TOP	33554432 bit			4				NOR TYPE	.0001 Amp		YES	45 ns		NO
M58BW016DB70T3FF	STMicroelectronics	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	FLATPACK	QFP80,.7X.9,32		Flash Memories	.8 mm	125 Cel		512KX32	512K	-40 Cel	8,31	YES	NICKEL PALLADIUM GOLD		QUAD	R-PQFP-G80		3.6 V	3.4 mm	14 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		e4			NOR TYPE	.000005 Amp	20 mm	YES	70 ns	3	NO
M58BW16FT4ZA3	STMicroelectronics	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS	2K,16K	50 mA	1048576 words	3.3	NO	2.5/3.3,3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories	1 mm	125 Cel		1MX32	1M	-40 Cel	8,31	YES			BOTTOM	R-PBGA-B80		3.6 V	1.7 mm	10 mm	Not Qualified	TOP	33554432 bit	2.7 V						NOR TYPE	.00015 Amp	12 mm	YES	45 ns	3.3	NO
M58BW016DB90T3	STMicroelectronics	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	FLATPACK	QFP80,.7X.9,32		Flash Memories	.8 mm	125 Cel		512KX32	512K	-40 Cel	8,31	YES	TIN LEAD		QUAD	R-PQFP-G80		3.6 V	3.4 mm	14 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	20 mm	YES	90 ns	3	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.