9 Flash Memory 5

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	No. of Words	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Maximum Write Cycle Time (tWC)	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Length	Programming Voltage (V)
THNSW016GAA-C	Toshiba	FLASH CARD	OTHER	9	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	17179869184 words	3.3	8	UNCASED CHIP		85 Cel	16GX8	16G	-25 Cel		UPPER	R-XUUC-N9	3.6 V	2.25 mm		24 mm	25 ms	137438953472 bit	2.7 V					32 mm	3.3
THNSW032GAA-C	Toshiba	FLASH CARD	OTHER	9	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	34359738368 words	3.3	8	UNCASED CHIP		85 Cel	32GX8	32G	-25 Cel		UPPER	R-XUUC-N9	3.6 V	2.25 mm		24 mm	25 ms	274877906944 bit	2.7 V					32 mm	3.3
THNSW008GAA-C	Toshiba	FLASH CARD	OTHER	9	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	8589934592 words	3.3	8	UNCASED CHIP		85 Cel	8GX8	8G	-25 Cel		UPPER	R-XUUC-N9	3.6 V	2.25 mm		24 mm	25 ms	68719476736 bit	2.7 V					32 mm	3.3
AT45DQ161-CCUF-T	Renesas Electronics	FLASH	INDUSTRIAL	9	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	16777216 words	3	1	GRID ARRAY, VERY THIN PROFILE	1 mm	85 Cel	16MX1	16M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	S-PBGA-B9	3.6 V	.6 mm	100 MHz	6 mm		16777216 bit	2.5 V	IT ALSO OPERATES AT FREQUENCY 85 MHZ AT 2.3 TO 3.6 V SUPPLY VOLTAGE	e1			6 mm	3
AT45DQ321-CCUF-T	Renesas Electronics	FLASH	INDUSTRIAL	9	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	33554432 words	3	1	GRID ARRAY, VERY THIN PROFILE	1 mm	85 Cel	32MX1	32M	-40 Cel		BOTTOM	S-PBGA-B9	3.6 V	.6 mm	104 MHz	6 mm		33554432 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED	6 mm	3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.