LBGA Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
S29CD032J0PFFI000	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	1048576 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories	1 mm	85 Cel	1MX32	1M	-40 Cel	16,62	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B80	3	2.75 V	1.4 mm		11 mm	Not Qualified		TOP	33554432 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e1	40	260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	2.7	YES
S29CD032J0RBFM002	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	2K,16K	90 mA	1048576 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories	1 mm	125 Cel	1MX32	1M	-40 Cel	16,62	YES		YES	BOTTOM	R-PBGA-B80		2.75 V	1.4 mm		9 mm	Not Qualified		TOP	33554432 bit	2.5 V						NOR TYPE	.00006 Amp	11 mm	YES	48 ns	2.7	YES
S29GL01GT11FHAV20	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3			16	GRID ARRAY, LOW PROFILE				1 mm	85 Cel	64MX16	64M	-40 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.4 mm		11 mm				1073741824 bit	2.7 V						NOR TYPE		13 mm		110 ns	2.7
S29CD016J0PFAM012	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories	1 mm	125 Cel	512KX32	512K	-40 Cel	16,30	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B80	3	2.75 V	1.4 mm		11 mm	Not Qualified		BOTTOM	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		e0		260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	2.7	YES
S29CD016J0MFAI13	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY	BGA80,8X10,40		Flash Memories	1 mm	85 Cel	512KX32	512K	-40 Cel	16,30	YES		YES	BOTTOM	R-PBGA-B80		2.75 V	1.4 mm	56 MHz	11 mm	Not Qualified	.000065 ms	BOTTOM	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE	.00006 Amp	13 mm	YES	54 ns	2.7	YES
S29CD032J0PFFM03	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			524288 words	2.6			32	GRID ARRAY				1 mm	125 Cel	512KX32	512K	-40 Cel					BOTTOM	R-PBGA-B80		2.75 V	1.4 mm	66 MHz	11 mm	Not Qualified	.000065 ms	BOTTOM	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							13 mm		54 ns	2.7
S29GL512T10DHA033	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, LOW PROFILE		8		1 mm	85 Cel	32MX16	32M	-40 Cel					BOTTOM	S-PBGA-B64		3.6 V	1.4 mm		9 mm				536870912 bit	2.7 V						NOR TYPE		9 mm		100 ns	2.7
S29CD016J0JFAM00	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY	BGA80,8X10,40		Flash Memories	1 mm	125 Cel	512KX32	512K	-40 Cel	16,30	YES		YES	BOTTOM	R-PBGA-B80		2.75 V	1.4 mm	40 MHz	11 mm	Not Qualified	.000065 ms	TOP	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE	.00006 Amp	13 mm	YES	54 ns	2.7	YES
S29CL032J0JFAI002	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	1048576 words	3.3	YES	1.8/3.3,3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories	1 mm	85 Cel	1MX32	1M	-40 Cel	16,62	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B80	3	3.6 V	1.4 mm		11 mm	Not Qualified		TOP	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e0		260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	3.3	YES
S29GL01GT11DHBV33	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			134217728 words	3			8	GRID ARRAY, LOW PROFILE		1		1 mm	105 Cel	128MX8	128M	-40 Cel					BOTTOM	S-PBGA-B64		3.6 V	1.4 mm		9 mm				1073741824 bit	2.7 V								9 mm		110 ns	2.7
S29CD016J0JFAI110	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories	1 mm	85 Cel	512KX32	512K	-40 Cel	16,30	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B80	3	2.75 V	1.4 mm		11 mm	Not Qualified		BOTTOM	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		e0		260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	2.7	YES
S29CD032J1JFAI013	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	1048576 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories	1 mm	85 Cel	1MX32	1M	-40 Cel	16,62	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B80	3	2.75 V	1.4 mm		11 mm	Not Qualified		BOTTOM	33554432 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		e0		260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	2.7	YES
S29CL016J1MFFM120	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	3.3	YES	1.8/3.3,3.3		GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories	1 mm	125 Cel	512KX32	512K	-40 Cel	16,30	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B80	3	3.6 V	1.4 mm		11 mm	Not Qualified		TOP	16777216 bit	3 V	TOP BOOT BLOCK		e1	40	260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	3.3	YES
S29GL256P10FFCR20	Infineon Technologies	FLASH	OTHER	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			268435456 words	3.3			1	GRID ARRAY, LOW PROFILE				1 mm	85 Cel	256MX1	256M	0 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.4 mm		11 mm	Not Qualified			268435456 bit	3 V						NOR TYPE		13 mm		100 ns	3
S29CL032J0PFAI100	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			32	GRID ARRAY, LOW PROFILE				1 mm	85 Cel	1MX32	1M	-40 Cel			TIN LEAD		BOTTOM	R-PBGA-B80	3	3.6 V	1.4 mm		11 mm	Not Qualified		TOP	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e0			NOR TYPE		13 mm		54 ns	3.3
S29CD016J0JBFM023	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories	1 mm	125 Cel	512KX32	512K	-40 Cel	16,30	YES		YES	BOTTOM	R-PBGA-B80		2.75 V	1.4 mm		9 mm	Not Qualified		TOP	16777216 bit	2.5 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00006 Amp	11 mm	YES	54 ns	2.7	YES
S29CL032J0RFFM030	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	1048576 words	3.3	YES	1.8/3.3,3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories	1 mm	125 Cel	1MX32	1M	-40 Cel	16,62	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B80	3	3.6 V	1.4 mm		11 mm	Not Qualified		BOTTOM	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		e1	40	260	NOR TYPE	.00006 Amp	13 mm	YES	48 ns	3.3	YES
S29GL032N11FAIV22	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	50 mA	2097152 words	3	YES	1.8/3.3,3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,32	8	Flash Memories	1 mm	85 Cel	2MX16	2M	-40 Cel	64	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm		11 mm	Not Qualified			33554432 bit	2.7 V		8/16	e0		260	NOR TYPE	.000005 Amp	13 mm	YES	110 ns	3	YES
S29CD016J0JBAI100	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories	1 mm	85 Cel	512KX32	512K	-40 Cel	16,30	YES		YES	BOTTOM	R-PBGA-B80		2.75 V	1.4 mm		9 mm	Not Qualified		TOP	16777216 bit	2.5 V						NOR TYPE	.00006 Amp	11 mm	YES	54 ns	2.7	YES
S29CL016J0MFFI010	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	3.3	YES	1.8/3.3,3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories	1 mm	85 Cel	512KX32	512K	-40 Cel	16,30	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B80	3	3.6 V	1.4 mm		11 mm	Not Qualified		BOTTOM	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		e1	40	260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	3.3	YES
S29CL016J0MFAI020	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	3.3	YES	1.8/3.3,3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories	1 mm	85 Cel	512KX32	512K	-40 Cel	16,30	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B80	3	3.6 V	1.4 mm		11 mm	Not Qualified		TOP	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e0		260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	3.3	YES
S29CD016J0JBAM122	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			524288 words	2.6			32	GRID ARRAY, LOW PROFILE				1 mm	125 Cel	512KX32	512K	-40 Cel					BOTTOM	R-PBGA-B80		2.75 V	1.4 mm		9 mm				16777216 bit	2.5 V								11 mm		54 ns	2.7
S29GL256P90FFIR20	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	110 mA	268435456 words	3.3	YES	3.3	1	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	256MX1	256M	-40 Cel	256	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm		11 mm	Not Qualified			268435456 bit	3 V		8/16	e1	30	260	NOR TYPE	.000005 Amp	13 mm	YES	90 ns	3	YES
S29CD032J0MFFM002	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	1048576 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories	1 mm	125 Cel	1MX32	1M	-40 Cel	16,62	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B80	3	2.75 V	1.4 mm		11 mm	Not Qualified		TOP	33554432 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e1	40	260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	2.7	YES
S29GL064S90DHVV23	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			8388608 words	3			8	GRID ARRAY, LOW PROFILE				1 mm	105 Cel	8MX8	8M	-40 Cel					BOTTOM	S-PBGA-B64		3.6 V	1.4 mm		9 mm			BOTTOM/TOP	67108864 bit	2.7 V						NOR TYPE		9 mm		90 ns	3
S29CD032J0RFFM012	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	1048576 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories	1 mm	125 Cel	1MX32	1M	-40 Cel	16,62	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B80	3	2.75 V	1.4 mm		11 mm	Not Qualified		BOTTOM	33554432 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		e1	40	260	NOR TYPE	.00006 Amp	13 mm	YES	48 ns	2.7	YES
S29CL032J1JFFM002	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	1048576 words	3.3	YES	1.8/3.3,3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories	1 mm	125 Cel	1MX32	1M	-40 Cel	16,62	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B80	3	3.6 V	1.4 mm		11 mm	Not Qualified		TOP	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e1	40	260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	3.3	YES
S29CL016J0PBFM023	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	2K,16K	90 mA	524288 words	3.3	YES	1.8/3.3,3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories	1 mm	125 Cel	512KX32	512K	-40 Cel	16,30	YES		YES	BOTTOM	R-PBGA-B80		3.6 V	1.4 mm		9 mm	Not Qualified		TOP	16777216 bit	3 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00006 Amp	11 mm	YES	54 ns	2.7	YES
S29CD032J0JFAI130	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	2.6			32	GRID ARRAY, LOW PROFILE				1 mm	85 Cel	1MX32	1M	-40 Cel			TIN LEAD		BOTTOM	R-PBGA-B80	3	2.75 V	1.4 mm		11 mm	Not Qualified		TOP	33554432 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e0			NOR TYPE		13 mm		54 ns	2.7
S29CD016J0MFFI103	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories	1 mm	85 Cel	512KX32	512K	-40 Cel	16,30	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B80	3	2.75 V	1.4 mm		11 mm	Not Qualified		TOP	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e1	40	260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	2.7	YES
S29CD016J0JFAI013	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories	1 mm	85 Cel	512KX32	512K	-40 Cel	16,30	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B80	3	2.75 V	1.4 mm		11 mm	Not Qualified		BOTTOM	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		e0		260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	2.7	YES
S29CL016J0JFAM03	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	GRID ARRAY				1 mm	125 Cel	512KX32	512K	-40 Cel					BOTTOM	R-PBGA-B80		3.6 V	1.4 mm	40 MHz	11 mm	Not Qualified	.000065 ms	BOTTOM	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							13 mm		54 ns	3.3
S29GL032N90FAI33	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, LOW PROFILE		8		1 mm	85 Cel	2MX16	2M	-40 Cel			TIN LEAD		BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm		11 mm	Not Qualified			33554432 bit	2.7 V			e0			NOR TYPE		13 mm		90 ns	3
S29CD016J1JFFI03	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY	BGA80,8X10,40		Flash Memories	1 mm	85 Cel	512KX32	512K	-40 Cel	16,30	YES		YES	BOTTOM	R-PBGA-B80		2.75 V	1.4 mm	40 MHz	11 mm	Not Qualified	.000065 ms	BOTTOM	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE	.00006 Amp	13 mm	YES	54 ns	2.7	YES
S29CD016J1JFAI003	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories	1 mm	85 Cel	512KX32	512K	-40 Cel	16,30	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B80	3	2.75 V	1.4 mm		11 mm	Not Qualified		TOP	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e0		260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	2.7	YES
S29CD032J0MBAM003	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	2K,16K	90 mA	1048576 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories	1 mm	125 Cel	1MX32	1M	-40 Cel	16,62	YES		YES	BOTTOM	R-PBGA-B80		2.75 V	1.4 mm		9 mm	Not Qualified		TOP	33554432 bit	2.5 V						NOR TYPE	.00006 Amp	11 mm	YES	54 ns	2.7	YES
S29CL016J0PBAM013	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	2K,16K	90 mA	524288 words	3.3	YES	1.8/3.3,3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,32		Flash Memories	1 mm	125 Cel	512KX32	512K	-40 Cel	16,30	YES		YES	BOTTOM	R-PBGA-B80		3.6 V	1.4 mm		9 mm	Not Qualified		BOTTOM	16777216 bit	3 V						NOR TYPE	.00006 Amp	11 mm	YES	54 ns	2.7	YES
S29CD016J0MBAM130	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			524288 words	2.6			32	GRID ARRAY, LOW PROFILE				1 mm	125 Cel	512KX32	512K	-40 Cel					BOTTOM	R-PBGA-B80		2.75 V	1.4 mm		9 mm				16777216 bit	2.5 V								11 mm		54 ns	2.7
S29CD016J0MFFI032	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories	1 mm	85 Cel	512KX32	512K	-40 Cel	16,30	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B80	3	2.75 V	1.4 mm		11 mm	Not Qualified		BOTTOM	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		e1	40	260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	2.7	YES
S29GL128S10FAI020	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40			1 mm	85 Cel	16MX8	16M	-40 Cel			TIN LEAD		BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm		11 mm				134217728 bit	2.7 V			e0			NOR TYPE		13 mm		100 ns	3
S29CD032J0MFFI02	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY	BGA80,8X10,40		Flash Memories	1 mm	85 Cel	512KX32	512K	-40 Cel	16,62	YES		YES	BOTTOM	R-PBGA-B80		2.75 V	1.4 mm	56 MHz	11 mm	Not Qualified	.000065 ms	TOP	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE	.00006 Amp	13 mm	YES	54 ns	2.7	YES
S29CD032J1JFFI000	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	1048576 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories	1 mm	85 Cel	1MX32	1M	-40 Cel	16,62	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B80	3	2.75 V	1.4 mm		11 mm	Not Qualified		TOP	33554432 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e1	40	260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	2.7	YES
S29CL032J0PFAI03	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	3.3	YES	1.8/3.3,3.3	32	GRID ARRAY	BGA80,8X10,40		Flash Memories	1 mm	85 Cel	512KX32	512K	-40 Cel	16,62	YES		YES	BOTTOM	R-PBGA-B80		3.6 V	1.4 mm	66 MHz	11 mm	Not Qualified	.000065 ms	BOTTOM	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE	.00006 Amp	13 mm	YES	54 ns	3.3	YES
S29GL256P11FACR13	Infineon Technologies	FLASH	OTHER	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			268435456 words	3.3			1	GRID ARRAY, LOW PROFILE				1 mm	85 Cel	256MX1	256M	0 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.4 mm		11 mm	Not Qualified			268435456 bit	3 V						NOR TYPE		13 mm		110 ns	3
S29CL032J1JBAI012	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	2K,16K	90 mA	1048576 words	3.3	YES	1.8/3.3,3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories	1 mm	85 Cel	1MX32	1M	-40 Cel	16,62	YES		YES	BOTTOM	R-PBGA-B80		3.6 V	1.4 mm		9 mm	Not Qualified		BOTTOM	33554432 bit	3 V						NOR TYPE	.00006 Amp	11 mm	YES	54 ns	2.7	YES
S29CL032J0RBAM002	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	2K,16K	90 mA	1048576 words	3.3	YES	1.8/3.3,3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories	1 mm	125 Cel	1MX32	1M	-40 Cel	16,62	YES		YES	BOTTOM	R-PBGA-B80		3.6 V	1.4 mm		9 mm	Not Qualified		TOP	33554432 bit	3 V						NOR TYPE	.00006 Amp	11 mm	YES	48 ns	2.7	YES
S29CD032J1MFAI023	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	2.6			32	GRID ARRAY, LOW PROFILE				1 mm	85 Cel	1MX32	1M	-40 Cel			TIN LEAD		BOTTOM	R-PBGA-B80	3	2.75 V	1.4 mm		11 mm	Not Qualified		TOP	33554432 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e0			NOR TYPE		13 mm		54 ns	2.7
S29GL128P10FFCR23	Infineon Technologies	FLASH	OTHER	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			1	GRID ARRAY, LOW PROFILE				1 mm	85 Cel	128MX1	128M	0 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.4 mm		11 mm	Not Qualified			134217728 bit	3 V						NOR TYPE		13 mm		100 ns	3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.