LBGA Flash Memory 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Package Body Material Surface Mount No. of Functions Technology Screening Level Terminal Form Parallel or Serial Operating Mode Sector Size (Words) Maximum Supply Current No. of Words Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Toggle Bit Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Operating Temperature No. of Sectors/Size Command User Interface Terminal Finish Ready or Busy Terminal Position No. of Ports Write Protection JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Maximum Clock Frequency (fCLK) Width Qualification Maximum Write Cycle Time (tWC) Serial Bus Type Boot Block Memory Density Minimum Supply Voltage (Vsup) Additional Features Page Size (words) JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Type Maximum Standby Current Length Common Flash Interface Maximum Access Time Programming Voltage (V) Data Polling

S29GL512T10DHA040

Infineon Technologies

FLASH

INDUSTRIAL

64

LBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

BALL

PARALLEL

ASYNCHRONOUS

33554432 words

3

16

GRID ARRAY, LOW PROFILE

8

1 mm

85 Cel

32MX16

32M

-40 Cel

BOTTOM

S-PBGA-B64

3.6 V

1.4 mm

9 mm

BOTTOM/TOP

536870912 bit

2.7 V

NOR TYPE

9 mm

100 ns

2.7

S29CL032J0PBFM030

Infineon Technologies

FLASH

AUTOMOTIVE

80

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

2K,16K

90 mA

1048576 words

3.3

YES

1.8/3.3,3.3

32

GRID ARRAY, LOW PROFILE

BGA80,8X10,40

Flash Memories

1 mm

125 Cel

1MX32

1M

-40 Cel

16,62

YES

YES

BOTTOM

R-PBGA-B80

3.6 V

1.4 mm

9 mm

Not Qualified

BOTTOM

33554432 bit

3 V

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.00006 Amp

11 mm

YES

54 ns

2.7

YES

S29GL064N90FFA040

Infineon Technologies

FLASH

INDUSTRIAL

64

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

BALL

PARALLEL

ASYNCHRONOUS

4194304 words

3

16

GRID ARRAY, LOW PROFILE

8

1 mm

85 Cel

4MX16

4M

-40 Cel

BOTTOM

R-PBGA-B64

3.6 V

1.4 mm

11 mm

BOTTOM

67108864 bit

2.7 V

NOR TYPE

13 mm

90 ns

3

S29CL032J1JBAM033

Infineon Technologies

FLASH

AUTOMOTIVE

80

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

2K,16K

90 mA

1048576 words

3.3

YES

1.8/3.3,3.3

32

GRID ARRAY, LOW PROFILE

BGA80,8X10,40

Flash Memories

1 mm

125 Cel

1MX32

1M

-40 Cel

16,62

YES

YES

BOTTOM

R-PBGA-B80

3.6 V

1.4 mm

9 mm

Not Qualified

BOTTOM

33554432 bit

3 V

NOR TYPE

.00006 Amp

11 mm

YES

54 ns

2.7

YES

S29CD032J1JBAM033

Infineon Technologies

FLASH

AUTOMOTIVE

80

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

2K,16K

90 mA

1048576 words

2.6

YES

1.8/2.6,2.6

32

GRID ARRAY, LOW PROFILE

BGA80,8X10,40

Flash Memories

1 mm

125 Cel

1MX32

1M

-40 Cel

16,62

YES

YES

BOTTOM

R-PBGA-B80

2.75 V

1.4 mm

9 mm

Not Qualified

BOTTOM

33554432 bit

2.5 V

NOR TYPE

.00006 Amp

11 mm

YES

54 ns

2.7

YES

S29CD016J1JFAM10

Infineon Technologies

FLASH

AUTOMOTIVE

80

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

2K,16K

90 mA

524288 words

2.6

YES

1.8/2.6,2.6

32

GRID ARRAY

BGA80,8X10,40

Flash Memories

1 mm

125 Cel

512KX32

512K

-40 Cel

16,30

YES

YES

BOTTOM

R-PBGA-B80

2.75 V

1.4 mm

40 MHz

11 mm

Not Qualified

.000065 ms

TOP

16777216 bit

2.5 V

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

NOR TYPE

.00006 Amp

13 mm

YES

54 ns

2.7

YES

S29CL032J0PBAM033

Infineon Technologies

FLASH

AUTOMOTIVE

80

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

2K,16K

90 mA

1048576 words

3.3

YES

1.8/3.3,3.3

32

GRID ARRAY, LOW PROFILE

BGA80,8X10,40

Flash Memories

1 mm

125 Cel

1MX32

1M

-40 Cel

16,62

YES

YES

BOTTOM

R-PBGA-B80

3.6 V

1.4 mm

9 mm

Not Qualified

BOTTOM

33554432 bit

3 V

NOR TYPE

.00006 Amp

11 mm

YES

54 ns

2.7

YES

S29GL01GT10FHA043

Infineon Technologies

FLASH

INDUSTRIAL

64

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

BALL

PARALLEL

ASYNCHRONOUS

67108864 words

3

16

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

64MX16

64M

-40 Cel

BOTTOM

R-PBGA-B64

3.6 V

1.4 mm

11 mm

1073741824 bit

2.7 V

NOR TYPE

13 mm

100 ns

2.7

S29CL032J0RFFM003

Infineon Technologies

FLASH

AUTOMOTIVE

80

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

2K,16K

90 mA

1048576 words

3.3

YES

1.8/3.3,3.3

32

GRID ARRAY, LOW PROFILE

BGA80,8X10,40

Flash Memories

1 mm

125 Cel

1MX32

1M

-40 Cel

16,62

YES

TIN SILVER COPPER

YES

BOTTOM

R-PBGA-B80

3

3.6 V

1.4 mm

11 mm

Not Qualified

TOP

33554432 bit

3 V

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK

e1

40

260

NOR TYPE

.00006 Amp

13 mm

YES

48 ns

3.3

YES

S29CL016J0PBAI012

Infineon Technologies

FLASH

INDUSTRIAL

80

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

2K,16K

90 mA

524288 words

3.3

YES

1.8/3.3,3.3

32

GRID ARRAY, LOW PROFILE

BGA80,8X10,32

Flash Memories

1 mm

85 Cel

512KX32

512K

-40 Cel

16,30

YES

YES

BOTTOM

R-PBGA-B80

3.6 V

1.4 mm

9 mm

Not Qualified

BOTTOM

16777216 bit

3 V

NOR TYPE

.00006 Amp

11 mm

YES

54 ns

2.7

YES

S29CD016J0MBAM023

Infineon Technologies

FLASH

AUTOMOTIVE

80

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

2K,16K

90 mA

524288 words

2.6

YES

1.8/2.6,2.6

32

GRID ARRAY, LOW PROFILE

BGA80,8X10,40

Flash Memories

1 mm

125 Cel

512KX32

512K

-40 Cel

16,30

YES

YES

BOTTOM

R-PBGA-B80

2.75 V

1.4 mm

9 mm

Not Qualified

TOP

16777216 bit

2.5 V

NOR TYPE

.00006 Amp

11 mm

YES

54 ns

2.7

YES

S29CL016J0MFAM00

Infineon Technologies

FLASH

AUTOMOTIVE

80

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

524288 words

3.3

32

GRID ARRAY

1 mm

125 Cel

512KX32

512K

-40 Cel

BOTTOM

R-PBGA-B80

3.6 V

1.4 mm

56 MHz

11 mm

Not Qualified

.000065 ms

TOP

16777216 bit

3 V

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

13 mm

54 ns

3.3

S29GL512S13DHEV20

Infineon Technologies

FLASH

64

LBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

64K

60 mA

33554432 words

3

YES

16

GRID ARRAY, LOW PROFILE

BGA64,8X8,40

20

1 mm

125 Cel

3-STATE

32MX16

32M

-55 Cel

512

YES

YES

BOTTOM

S-PBGA-B64

3.6 V

1.4 mm

100 Write/Erase Cycles

9 mm

.00006 ms

536870912 bit

2.7 V

16

NOR TYPE

.0002 Amp

9 mm

YES

130 ns

3

YES

S29GL128M90FFIR1

Infineon Technologies

FLASH

INDUSTRIAL

64

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

64K

60 mA

8388608 words

3.3

YES

3.3

16

GRID ARRAY, LOW PROFILE

BGA64,8X8,40

8

Flash Memories

1 mm

85 Cel

8MX16

8M

-40 Cel

256

YES

TIN SILVER COPPER

YES

BOTTOM

R-PBGA-B64

3

3.6 V

1.4 mm

11 mm

Not Qualified

134217728 bit

3 V

IT ALSO OPERATES AT 2.7 TO 3.6 V SUPPLY FULL VOLTAGE RANGE

4/8

e1

40

260

NOR TYPE

.000005 Amp

13 mm

YES

90 ns

3

YES

S29CL032J0PFFI103

Infineon Technologies

FLASH

INDUSTRIAL

80

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

3.3

32

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

1MX32

1M

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B80

3

3.6 V

1.4 mm

11 mm

Not Qualified

TOP

33554432 bit

3 V

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK

e1

NOR TYPE

13 mm

54 ns

3.3

S29CD032J0JFAI123

Infineon Technologies

FLASH

INDUSTRIAL

80

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

2.6

32

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

1MX32

1M

-40 Cel

TIN LEAD

BOTTOM

R-PBGA-B80

3

2.75 V

1.4 mm

11 mm

Not Qualified

TOP

33554432 bit

2.5 V

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK

e0

NOR TYPE

13 mm

54 ns

2.7

S29CL016J1JFAI02

Infineon Technologies

FLASH

INDUSTRIAL

80

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

524288 words

3.3

32

GRID ARRAY

1 mm

85 Cel

512KX32

512K

-40 Cel

BOTTOM

R-PBGA-B80

3.6 V

1.4 mm

40 MHz

11 mm

Not Qualified

.000065 ms

TOP

16777216 bit

3 V

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

13 mm

54 ns

3.3

S29CL032J0RBFI023

Infineon Technologies

FLASH

INDUSTRIAL

80

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

2K,16K

90 mA

1048576 words

3.3

YES

1.8/3.3,3.3

32

GRID ARRAY, LOW PROFILE

BGA80,8X10,40

Flash Memories

1 mm

85 Cel

1MX32

1M

-40 Cel

16,62

YES

YES

BOTTOM

R-PBGA-B80

3.6 V

1.4 mm

9 mm

Not Qualified

TOP

33554432 bit

3 V

NOR TYPE

.00006 Amp

11 mm

YES

48 ns

2.7

YES

S29CD016J1JBFI133

Infineon Technologies

FLASH

INDUSTRIAL

80

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

524288 words

2.6

32

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

512KX32

512K

-40 Cel

BOTTOM

R-PBGA-B80

2.75 V

1.4 mm

9 mm

16777216 bit

2.5 V

11 mm

54 ns

2.7

S29CL032J0PBAI003

Infineon Technologies

FLASH

INDUSTRIAL

80

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

2K,16K

90 mA

1048576 words

3.3

YES

1.8/3.3,3.3

32

GRID ARRAY, LOW PROFILE

BGA80,8X10,40

Flash Memories

1 mm

85 Cel

1MX32

1M

-40 Cel

16,62

YES

YES

BOTTOM

R-PBGA-B80

3.6 V

1.4 mm

9 mm

Not Qualified

TOP

33554432 bit

3 V

NOR TYPE

.00006 Amp

11 mm

YES

54 ns

2.7

YES

S29CD032J0JFFM022

Infineon Technologies

FLASH

AUTOMOTIVE

80

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

2K,16K

90 mA

1048576 words

2.6

YES

1.8/2.6,2.6

32

GRID ARRAY, LOW PROFILE

BGA80,8X10,40

Flash Memories

1 mm

125 Cel

1MX32

1M

-40 Cel

16,62

YES

TIN SILVER COPPER

YES

BOTTOM

R-PBGA-B80

3

2.75 V

1.4 mm

11 mm

Not Qualified

TOP

33554432 bit

2.5 V

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK

e1

40

260

NOR TYPE

.00006 Amp

13 mm

YES

54 ns

2.7

YES

S29CL032J0MFFI002

Infineon Technologies

FLASH

INDUSTRIAL

80

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

2K,16K

90 mA

1048576 words

3.3

YES

1.8/3.3,3.3

32

GRID ARRAY, LOW PROFILE

BGA80,8X10,40

Flash Memories

1 mm

85 Cel

1MX32

1M

-40 Cel

16,62

YES

TIN SILVER COPPER

YES

BOTTOM

R-PBGA-B80

3

3.6 V

1.4 mm

11 mm

Not Qualified

TOP

33554432 bit

3 V

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK

e1

40

260

NOR TYPE

.00006 Amp

13 mm

YES

54 ns

3.3

YES

S29GL512T10DHI033

Infineon Technologies

FLASH

INDUSTRIAL

64

LBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

33554432 words

3

16

GRID ARRAY, LOW PROFILE

8

1 mm

85 Cel

32MX16

32M

-40 Cel

TIN SILVER COPPER

BOTTOM

S-PBGA-B64

3

3.6 V

1.4 mm

9 mm

BOTTOM/TOP

536870912 bit

2.7 V

e1

260

NOR TYPE

9 mm

100 ns

2.7

S29CL032J0JFAM00

Infineon Technologies

FLASH

AUTOMOTIVE

80

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

524288 words

3.3

32

GRID ARRAY

1 mm

125 Cel

512KX32

512K

-40 Cel

BOTTOM

R-PBGA-B80

3.6 V

1.4 mm

40 MHz

11 mm

Not Qualified

.000065 ms

TOP

16777216 bit

3 V

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

13 mm

54 ns

3.3

S29CD016J0JFFI122

Infineon Technologies

FLASH

INDUSTRIAL

80

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

2K,16K

90 mA

524288 words

2.6

YES

1.8/2.6,2.6

32

GRID ARRAY, LOW PROFILE

BGA80,8X10,40

Flash Memories

1 mm

85 Cel

512KX32

512K

-40 Cel

16,30

YES

TIN SILVER COPPER

YES

BOTTOM

R-PBGA-B80

3

2.75 V

1.4 mm

11 mm

Not Qualified

TOP

16777216 bit

2.5 V

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK

e1

40

260

NOR TYPE

.00006 Amp

13 mm

YES

54 ns

2.7

YES

S29CL016J0JFFI100

Infineon Technologies

FLASH

INDUSTRIAL

80

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

524288 words

3.3

32

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

512KX32

512K

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B80

3

3.6 V

1.4 mm

11 mm

Not Qualified

TOP

16777216 bit

3 V

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK

e1

NOR TYPE

13 mm

54 ns

3.3

S29CL016J0MFFI130

Infineon Technologies

FLASH

INDUSTRIAL

80

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

524288 words

3.3

32

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

512KX32

512K

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B80

3

3.6 V

1.4 mm

11 mm

Not Qualified

TOP

16777216 bit

3 V

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK

e1

NOR TYPE

13 mm

54 ns

3.3

S29CL016J0PFAM00

Infineon Technologies

FLASH

AUTOMOTIVE

80

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

524288 words

3.3

32

GRID ARRAY

1 mm

125 Cel

512KX32

512K

-40 Cel

BOTTOM

R-PBGA-B80

3.6 V

1.4 mm

66 MHz

11 mm

Not Qualified

.000065 ms

TOP

16777216 bit

3 V

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

13 mm

54 ns

3.3

S29CD016J0JBFI020

Infineon Technologies

FLASH

INDUSTRIAL

80

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

2K,16K

90 mA

524288 words

2.6

YES

1.8/2.6,2.6

32

GRID ARRAY, LOW PROFILE

BGA80,8X10,40

Flash Memories

1 mm

85 Cel

512KX32

512K

-40 Cel

16,30

YES

YES

BOTTOM

R-PBGA-B80

2.75 V

1.4 mm

9 mm

Not Qualified

TOP

16777216 bit

2.5 V

NOR TYPE

.00006 Amp

11 mm

YES

54 ns

2.7

YES

S29CD016J0PFAM00

Infineon Technologies

FLASH

AUTOMOTIVE

80

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

2K,16K

90 mA

524288 words

2.6

YES

1.8/2.6,2.6

32

GRID ARRAY

BGA80,8X10,40

Flash Memories

1 mm

125 Cel

512KX32

512K

-40 Cel

16,30

YES

YES

BOTTOM

R-PBGA-B80

2.75 V

1.4 mm

66 MHz

11 mm

Not Qualified

.000065 ms

TOP

16777216 bit

2.5 V

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

NOR TYPE

.00006 Amp

13 mm

YES

54 ns

2.7

YES

S29CD032J0PFFI013

Infineon Technologies

FLASH

INDUSTRIAL

80

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

2K,16K

90 mA

1048576 words

2.6

YES

1.8/2.6,2.6

32

GRID ARRAY, LOW PROFILE

BGA80,8X10,40

Flash Memories

1 mm

85 Cel

1MX32

1M

-40 Cel

16,62

YES

TIN SILVER COPPER

YES

BOTTOM

R-PBGA-B80

3

2.75 V

1.4 mm

11 mm

Not Qualified

BOTTOM

33554432 bit

2.5 V

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK

e1

40

260

NOR TYPE

.00006 Amp

13 mm

YES

54 ns

2.7

YES

S29CL032J0RFAI132

Infineon Technologies

FLASH

INDUSTRIAL

80

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

3.3

32

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

1MX32

1M

-40 Cel

TIN LEAD

BOTTOM

R-PBGA-B80

3

3.6 V

1.4 mm

11 mm

Not Qualified

TOP

33554432 bit

3 V

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK

e0

NOR TYPE

13 mm

48 ns

3.3

S29CL032J0MFFI020

Infineon Technologies

FLASH

INDUSTRIAL

80

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

2K,16K

90 mA

1048576 words

3.3

YES

1.8/3.3,3.3

32

GRID ARRAY, LOW PROFILE

BGA80,8X10,40

Flash Memories

1 mm

85 Cel

1MX32

1M

-40 Cel

16,62

YES

TIN SILVER COPPER

YES

BOTTOM

R-PBGA-B80

3

3.6 V

1.4 mm

11 mm

Not Qualified

TOP

33554432 bit

3 V

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK

e1

40

260

NOR TYPE

.00006 Amp

13 mm

YES

54 ns

3.3

YES

S29GL512R10DFCR13

Infineon Technologies

FLASH

OTHER

64

LBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

65536 words

3.3

16

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

64KX16

64K

0 Cel

BOTTOM

S-PBGA-B64

3.6 V

1.4 mm

9 mm

1048576 bit

3 V

NOR TYPE

9 mm

100 ns

3

S29CD032J0MBFM010

Infineon Technologies

FLASH

AUTOMOTIVE

80

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

2K,16K

90 mA

1048576 words

2.6

YES

1.8/2.6,2.6

32

GRID ARRAY, LOW PROFILE

BGA80,8X10,40

Flash Memories

1 mm

125 Cel

1MX32

1M

-40 Cel

16,62

YES

YES

BOTTOM

R-PBGA-B80

2.75 V

1.4 mm

9 mm

Not Qualified

BOTTOM

33554432 bit

2.5 V

NOR TYPE

.00006 Amp

11 mm

YES

54 ns

2.7

YES

S29GL512T13DHNV30

Infineon Technologies

FLASH

AUTOMOTIVE

64

LBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

33554432 words

3

16

GRID ARRAY, LOW PROFILE

8

1 mm

125 Cel

32MX16

32M

-40 Cel

BOTTOM

S-PBGA-B64

3.6 V

1.4 mm

9 mm

536870912 bit

2.7 V

NOR TYPE

9 mm

130 ns

2.7

S29GL064S90FHVV20

Infineon Technologies

FLASH

INDUSTRIAL

64

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

8388608 words

3

8

GRID ARRAY, LOW PROFILE

1 mm

105 Cel

8MX8

8M

-40 Cel

BOTTOM

R-PBGA-B64

3

3.6 V

1.4 mm

11 mm

67108864 bit

2.7 V

13 mm

90 ns

3

S29GL032M10FFIR1

Infineon Technologies

FLASH

INDUSTRIAL

64

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

64K

60 mA

2097152 words

3.3

YES

3.3

16

GRID ARRAY, LOW PROFILE

BGA64,8X8,40

8

Flash Memories

1 mm

85 Cel

2MX16

2M

-40 Cel

64

YES

TIN SILVER COPPER

YES

BOTTOM

R-PBGA-B64

3

3.6 V

1.4 mm

11 mm

Not Qualified

33554432 bit

3 V

IT ALSO OPERATES AT 2.7 TO 3.6 V SUPPLY FULL VOLTAGE RANGE

4/8

e1

40

260

NOR TYPE

.000005 Amp

13 mm

YES

100 ns

3

YES

S29CD016J1JFFM130

Infineon Technologies

FLASH

AUTOMOTIVE

80

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

2K,16K

90 mA

524288 words

2.6

YES

1.8/2.6,2.6

32

GRID ARRAY, LOW PROFILE

BGA80,8X10,40

Flash Memories

1 mm

125 Cel

512KX32

512K

-40 Cel

16,30

YES

TIN SILVER COPPER

YES

BOTTOM

R-PBGA-B80

3

2.75 V

1.4 mm

11 mm

Not Qualified

BOTTOM

16777216 bit

2.5 V

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK

e1

40

260

NOR TYPE

.00006 Amp

13 mm

YES

54 ns

2.7

YES

S29CL016J0JFAM112

Infineon Technologies

FLASH

AUTOMOTIVE

80

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

524288 words

3.3

32

GRID ARRAY, LOW PROFILE

1 mm

125 Cel

512KX32

512K

-40 Cel

TIN LEAD

BOTTOM

R-PBGA-B80

3

3.6 V

1.4 mm

11 mm

Not Qualified

BOTTOM

16777216 bit

3 V

BOTTOM BOOT BLOCK

e0

NOR TYPE

13 mm

54 ns

3.3

S29CD032J0RFAI103

Infineon Technologies

FLASH

INDUSTRIAL

80

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

2.6

32

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

1MX32

1M

-40 Cel

TIN LEAD

BOTTOM

R-PBGA-B80

3

2.75 V

1.4 mm

11 mm

Not Qualified

TOP

33554432 bit

2.5 V

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK

e0

NOR TYPE

13 mm

48 ns

2.7

S29CL016J1MFAM033

Infineon Technologies

FLASH

AUTOMOTIVE

80

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

524288 words

3.3

32

GRID ARRAY, LOW PROFILE

1 mm

125 Cel

512KX32

512K

-40 Cel

TIN LEAD

BOTTOM

R-PBGA-B80

3

3.6 V

1.4 mm

11 mm

Not Qualified

BOTTOM

16777216 bit

3 V

TOP BOOT BLOCK

e0

NOR TYPE

13 mm

54 ns

3.3

S29CD016J0PFFI033

Infineon Technologies

FLASH

INDUSTRIAL

80

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

2K,16K

90 mA

524288 words

2.6

YES

1.8/2.6,2.6

32

GRID ARRAY, LOW PROFILE

BGA80,8X10,40

Flash Memories

1 mm

85 Cel

512KX32

512K

-40 Cel

16,30

YES

TIN SILVER COPPER

YES

BOTTOM

R-PBGA-B80

3

2.75 V

1.4 mm

11 mm

Not Qualified

BOTTOM

16777216 bit

2.5 V

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK

e1

40

260

NOR TYPE

.00006 Amp

13 mm

YES

54 ns

2.7

YES

S29CL032J0PFFI022

Infineon Technologies

FLASH

INDUSTRIAL

80

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

2K,16K

90 mA

1048576 words

3.3

YES

1.8/3.3,3.3

32

GRID ARRAY, LOW PROFILE

BGA80,8X10,40

Flash Memories

1 mm

85 Cel

1MX32

1M

-40 Cel

16,62

YES

TIN SILVER COPPER

YES

BOTTOM

R-PBGA-B80

3

3.6 V

1.4 mm

11 mm

Not Qualified

TOP

33554432 bit

3 V

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK

e1

40

260

NOR TYPE

.00006 Amp

13 mm

YES

54 ns

3.3

YES

S29CL016J0PFAI030

Infineon Technologies

FLASH

INDUSTRIAL

80

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

2K,16K

90 mA

524288 words

3.3

YES

1.8/3.3,3.3

32

GRID ARRAY, LOW PROFILE

BGA80,8X10,40

Flash Memories

1 mm

85 Cel

512KX32

512K

-40 Cel

16,30

YES

TIN LEAD

YES

BOTTOM

R-PBGA-B80

3

3.6 V

1.4 mm

11 mm

Not Qualified

BOTTOM

16777216 bit

3 V

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK

e0

260

NOR TYPE

.00006 Amp

13 mm

YES

54 ns

3.3

YES

S29CD016J1JFFM032

Infineon Technologies

FLASH

AUTOMOTIVE

80

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

2K,16K

90 mA

524288 words

2.6

YES

1.8/2.6,2.6

32

GRID ARRAY, LOW PROFILE

BGA80,8X10,40

Flash Memories

1 mm

125 Cel

512KX32

512K

-40 Cel

16,30

YES

TIN SILVER COPPER

YES

BOTTOM

R-PBGA-B80

3

2.75 V

1.4 mm

11 mm

Not Qualified

BOTTOM

16777216 bit

2.5 V

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK

e1

40

260

NOR TYPE

.00006 Amp

13 mm

YES

54 ns

2.7

YES

S29GL064N90FFA033

Infineon Technologies

FLASH

INDUSTRIAL

64

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

BALL

PARALLEL

ASYNCHRONOUS

4194304 words

3

16

GRID ARRAY, LOW PROFILE

8

1 mm

85 Cel

4MX16

4M

-40 Cel

BOTTOM

R-PBGA-B64

3.6 V

1.4 mm

11 mm

TOP

67108864 bit

2.7 V

NOR TYPE

13 mm

90 ns

3

S29CD016J1JBFI130

Infineon Technologies

FLASH

INDUSTRIAL

80

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

524288 words

2.6

32

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

512KX32

512K

-40 Cel

BOTTOM

R-PBGA-B80

2.75 V

1.4 mm

9 mm

16777216 bit

2.5 V

11 mm

54 ns

2.7

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.