SSOP Flash Memory 16

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
DA28F640J5-150	Intel	FLASH	OTHER	56	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	80 mA	4194304 words	5	NO	3/3.3,5	16	SMALL OUTLINE, SHRINK PITCH	SOP56,.6,32	8	Flash Memories	.8 mm	85 Cel	3-STATE	4MX16	4M	-20 Cel	64	YES		YES	DUAL	R-PDSO-G56		5.5 V	1.9 mm	13.3 mm	Not Qualified		67108864 bit	4.5 V						NOR TYPE	.000125 Amp	23.7 mm	YES	150 ns	5	NO
DT28F160S5-70	Intel	FLASH	INDUSTRIAL	56	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	80 mA	2097152 words	5	NO	5	8	SMALL OUTLINE, SHRINK PITCH	SOP56,.6,32	8	Flash Memories	.8 mm	85 Cel	3-STATE	2MX8	2M	-40 Cel	32	YES	TIN LEAD	YES	DUAL	R-PDSO-G56		5.25 V	1.9 mm	13.3 mm	Not Qualified		16777216 bit	4.75 V	CONFIGURABLE AS 1M X 16	16/32	e0			NOR TYPE	.00002 Amp	23.7 mm	YES	70 ns	5	NO
MS28F016SV-85	Intel	FLASH	MILITARY	56	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	MIL-PRF-38535 Class N	GULL WING	PARALLEL	ASYNCHRONOUS	64K	135 mA	2097152 words	5	NO	3.3/5	8	SMALL OUTLINE, SHRINK PITCH	SOP56,.6,32	16	Flash Memories	.8 mm	125 Cel	3-STATE	2MX8	2M	-55 Cel	32	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G56		5.5 V	1.9 mm	13.3 mm	Not Qualified		16777216 bit	3.15 V	USER-SELECTABLE 5V OR 12V VPP	128/256	e0			NOR TYPE	.00005 Amp	23.7 mm		85 ns	5	NO
DA28F640J5A-150	Intel	FLASH	OTHER	56	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	80 mA	4194304 words	5	NO	3/3.3,5	16	SMALL OUTLINE, SHRINK PITCH	SOP56,.6,32	8	Flash Memories	.8 mm	85 Cel		4MX16	4M	-20 Cel	64	YES	TIN LEAD	YES	DUAL	R-PDSO-G56		5.5 V	1.9 mm	13.3 mm	Not Qualified		67108864 bit	4.5 V			e0			NOR TYPE	.000125 Amp	23.7 mm	YES	150 ns	5	NO
DA28F320J5-120	Intel	FLASH	OTHER	56	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	80 mA	2097152 words	5	NO	3/3.3,5	16	SMALL OUTLINE, SHRINK PITCH	SOP56,.6,32	8	Flash Memories	.8 mm	85 Cel	3-STATE	2MX16	2M	-20 Cel	32	YES	TIN LEAD	YES	DUAL	R-PDSO-G56		5.5 V	1.9 mm	13.3 mm	Not Qualified		33554432 bit	4.5 V	CONFIGURABLE AS 2M X 16; BLOCK ERASE	16/32	e0			NOR TYPE	.000125 Amp	23.7 mm	YES	120 ns	5	NO
DE28F800F3T95	Intel	FLASH	AUTOMOTIVE	56	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	60 mA	524288 words	3.3	NO	3.3	16	SMALL OUTLINE, SHRINK PITCH	SOP56,.6,32		Flash Memories	.8 mm	125 Cel		512KX16	512K	-40 Cel	8,15	YES	Tin/Lead (Sn/Pb)		DUAL	R-PDSO-G56		3.6 V	1.9 mm	13.3 mm	Not Qualified	TOP	8388608 bit	3 V	TOP BOOT BLOCK	4	e0			NOR TYPE	.0001 Amp	23.7 mm		95 ns	3	NO
DT28F016SA-100	Intel	FLASH	INDUSTRIAL	56	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	40 mA	2097152 words	5	NO	3.3/5	8	SMALL OUTLINE, SHRINK PITCH	SOP56,.6,32	16	Flash Memories	.8 mm	85 Cel	3-STATE	2MX8	2M	-40 Cel	32	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G56		5.5 V	1.9 mm	13.3 mm	Not Qualified		16777216 bit	2.97 V	DEEP POWER-DOWN; HARDWARE WRITE PROTECT	128/256	e0			NOR TYPE	.000005 Amp	23.7 mm		100 ns	12	NO
DT28F160S3-100	Intel	FLASH	INDUSTRIAL	56	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	80 mA	2097152 words	3.3	NO	3.3	8	SMALL OUTLINE, SHRINK PITCH	SOP56,.6,32	8	Flash Memories	.8 mm	85 Cel		2MX8	2M	-40 Cel	32	YES	TIN LEAD	YES	DUAL	R-PDSO-G56		3.6 V	1.9 mm	13.3 mm	Not Qualified		16777216 bit	3 V		16/32	e0			NOR TYPE	.000005 Amp	23.7 mm	YES	100 ns	2.7	NO
K9KAG08U0M-PCB00	Samsung	FLASH	COMMERCIAL	48	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	256K	35 mA	2147483648 words	3.3	NO	3.3	8	SMALL OUTLINE	TSSOP48,.8,20		Flash Memories	.5 mm	70 Cel		2GX8	2G	0 Cel	8K	YES		YES	DUAL	R-PDSO-G48	3	3.6 V	2.35 mm	12 mm	Not Qualified		17179869184 bit	2.7 V		4K			260		.0001 Amp	20 mm		25 ns	3	NO
K9MCG08U5M-PCB00	Samsung	FLASH	COMMERCIAL	48	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			8589934592 words	3.3			8	SMALL OUTLINE				.5 mm	70 Cel		8GX8	8G	0 Cel					DUAL	R-PDSO-G48		3.6 V	2.35 mm	12 mm	Not Qualified		68719476736 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			20 mm		45 ns	3
K9MCG08U5M-PIB00	Samsung	FLASH	INDUSTRIAL	48	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			8589934592 words	3.3			8	SMALL OUTLINE				.5 mm	85 Cel		8GX8	8G	-40 Cel					DUAL	R-PDSO-G48		3.6 V	2.35 mm	12 mm	Not Qualified		68719476736 bit	2.7 V								20 mm		45 ns	3
K9WBG08U1M-PCB00	Samsung	FLASH	COMMERCIAL	48	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	256K	35 mA	4294967296 words	3.3	NO	3.3	8	SMALL OUTLINE	TSSOP48,.8,20		Flash Memories	.5 mm	70 Cel		4GX8	4G	0 Cel	16K	YES		YES	DUAL	R-PDSO-G48	3	3.6 V	2.35 mm	12 mm	Not Qualified		34359738368 bit	2.7 V		4K			260		.0001 Amp	20 mm		25 ns	3	NO
K9F5608B0DPIB000	Samsung	FLASH	INDUSTRIAL	48	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			33554432 words	2.7			8	SMALL OUTLINE				.5 mm	85 Cel		32MX8	32M	-40 Cel					DUAL	R-PDSO-G48		2.9 V	2.35 mm	12 mm	Not Qualified		268435456 bit	2.5 V								20 mm		45 ns	2.7
K9F5608U0DPIB000	Samsung	FLASH	INDUSTRIAL	48	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			33554432 words	3.3			8	SMALL OUTLINE				.5 mm	85 Cel		32MX8	32M	-40 Cel					DUAL	R-PDSO-G48		3.6 V	2.35 mm	12 mm	Not Qualified		268435456 bit	2.7 V								20 mm		45 ns	3.3
K9F5608U0DPCB000	Samsung	FLASH	COMMERCIAL	48	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			33554432 words	3.3			8	SMALL OUTLINE				.5 mm	70 Cel		32MX8	32M	0 Cel					DUAL	R-PDSO-G48		3.6 V	2.35 mm	12 mm	Not Qualified		268435456 bit	2.7 V								20 mm		45 ns	3.3
K9F5608B0DPCB000	Samsung	FLASH	COMMERCIAL	48	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			33554432 words	2.7			8	SMALL OUTLINE				.5 mm	70 Cel		32MX8	32M	0 Cel					DUAL	R-PDSO-G48		2.9 V	2.35 mm	12 mm	Not Qualified		268435456 bit	2.5 V								20 mm		45 ns	2.7

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.