TSOP1 Flash Memory 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Package Body Material Surface Mount No. of Functions Technology Screening Level Terminal Form Parallel or Serial Operating Mode Sector Size (Words) Maximum Supply Current No. of Words Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Toggle Bit Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Operating Temperature No. of Sectors/Size Command User Interface Terminal Finish Ready or Busy Terminal Position No. of Ports Write Protection JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Maximum Clock Frequency (fCLK) Width Qualification Maximum Write Cycle Time (tWC) Serial Bus Type Boot Block Memory Density Minimum Supply Voltage (Vsup) Additional Features Page Size (words) JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Type Maximum Standby Current Length Common Flash Interface Maximum Access Time Programming Voltage (V) Data Polling

TMS29F800B-80CDCDL

Texas Instruments

FLASH

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

60 mA

1048576 words

5

YES

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

8

Flash Memories

.5 mm

70 Cel

3-STATE

1MX8

1M

0 Cel

1,2,1,15

YES

YES

DUAL

R-PDSO-G48

5.5 V

1.2 mm

100000 Write/Erase Cycles

12 mm

Not Qualified

BOTTOM

8388608 bit

4.5 V

CAN ALSO BE CONFIGURED AS 512K X 16

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.000005 Amp

18.4 mm

80 ns

5

YES

TMS29F010-150DDL

Texas Instruments

FLASH

COMMERCIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K

15 mA

131072 words

5

YES

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.8,20

Flash Memories

.5 mm

70 Cel

3-STATE

128KX8

128K

0 Cel

8

YES

DUAL

R-PDSO-G32

5.25 V

1.2 mm

10000 Write/Erase Cycles

8 mm

Not Qualified

1048576 bit

4.75 V

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.001 Amp

18.415 mm

150 ns

5

YES

TMS28F800AVB-80BDCDL

Texas Instruments

FLASH

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

MOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

3

8

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

1MX8

1M

0 Cel

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

BOTTOM

8388608 bit

2.7 V

10000 PROGRAM/ERASE CYCLES; CONFG AS 512K X 16; BOTTOM BOOT BLOCK

NOR TYPE

18.4 mm

80 ns

3

TMS28F002AZB90BDCDQ

Texas Instruments

FLASH

AUTOMOTIVE

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

262144 words

5

8

SMALL OUTLINE, THIN PROFILE

.5 mm

125 Cel

256KX8

256K

-40 Cel

DUAL

R-PDSO-G48

5.5 V

1.2 mm

12 mm

Not Qualified

BOTTOM

2097152 bit

4.5 V

BOTTOM BOOT BLOCK

NOR TYPE

18.4 mm

90 ns

12

TMS28F020-10C4DDL4

Texas Instruments

FLASH

COMMERCIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

30 mA

262144 words

5

NO

5

8

SMALL OUTLINE, THIN PROFILE

TSOP32,.8

Flash Memories

.5 mm

70 Cel

3-STATE

256KX8

256K

0 Cel

YES

DUAL

R-PDSO-G32

5.5 V

1.2 mm

10000 Write/Erase Cycles

8 mm

Not Qualified

2097152 bit

4.5 V

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.0001 Amp

18.415 mm

100 ns

12

NO

TMS28F800VT10CDCDL

Texas Instruments

FLASH

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

3

8

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

1MX8

1M

0 Cel

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

TOP

8388608 bit

2.7 V

CONFG AS 512K X 16; TOP BOOT BLOCK

NOR TYPE

18.4 mm

100 ns

3

TMS28F008LB12CDCDE

Texas Instruments

FLASH

INDUSTRIAL

40

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

3.3

8

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

1MX8

1M

-40 Cel

DUAL

R-PDSO-G40

3.6 V

1.2 mm

10 mm

Not Qualified

BOTTOM

8388608 bit

3 V

BOTTOM BOOT BLOCK

NOR TYPE

18.4 mm

120 ns

3

TMS29F008B-80CDCDL

Texas Instruments

FLASH

COMMERCIAL

40

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

60 mA

1048576 words

5

YES

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP40,.8,20

Flash Memories

.5 mm

70 Cel

3-STATE

1MX8

1M

0 Cel

1,2,1,15

YES

YES

DUAL

R-PDSO-G40

5.5 V

1.2 mm

100000 Write/Erase Cycles

10 mm

Not Qualified

BOTTOM

8388608 bit

4.5 V

100000 PROGRAM/ERASE CYCLES

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.000005 Amp

18.4 mm

80 ns

5

YES

TMS28F400AET70BDCDL

Texas Instruments

FLASH

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

MOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,96K,128K

65 mA

262144 words

3

NO

3/5

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

8

Flash Memories

.5 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

1,2,1,3

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

10000 Write/Erase Cycles

12 mm

Not Qualified

TOP

4194304 bit

2.7 V

ALSO OPERATES AT 5V SUPPLY; TOP BOOT BLOCK

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.000008 Amp

18.4 mm

130 ns

5

NO

TMS28F400BZB-80BDBRQ

Texas Instruments

FLASH

AUTOMOTIVE

56

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,96K,128K

65 mA

524288 words

5

NO

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP56,.8,20

16

Flash Memories

.5 mm

125 Cel

3-STATE

512KX8

512K

-40 Cel

1,2,1,3

YES

DUAL

R-PDSO-G56

5.5 V

1.2 mm

10000 Write/Erase Cycles

14 mm

Not Qualified

BOTTOM

4194304 bit

4.5 V

DEEP POWER-DOWN

NOR TYPE

.000008 Amp

18.4 mm

80 ns

12

NO

TMS28F002AZT70CDCDL

Texas Instruments

FLASH

COMMERCIAL

40

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

MOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,96K,128K

65 mA

262144 words

5

NO

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP40,.8,20

Flash Memories

.5 mm

70 Cel

3-STATE

256KX8

256K

0 Cel

1,2,1,1

YES

DUAL

R-PDSO-G40

5.5 V

1.2 mm

100000 Write/Erase Cycles

10 mm

Not Qualified

TOP

2097152 bit

4.5 V

100000 PROGRAM/ERASE CYCLES; TOP BOOT BLOCK

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.000008 Amp

18.4 mm

70 ns

12

NO

TMS28F400AZT60BDCDL

Texas Instruments

FLASH

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,96K,128K

65 mA

524288 words

5

NO

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

8

Flash Memories

.5 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

1,2,1,3

YES

DUAL

R-PDSO-G48

5.5 V

1.2 mm

10000 Write/Erase Cycles

12 mm

Not Qualified

TOP

4194304 bit

4.5 V

CAN BE CONFG AS 256K X 16; TOP BOOT BLOCK

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.000005 Amp

18.4 mm

60 ns

12

NO

TMS28F010A-12C3DDL4

Texas Instruments

FLASH

COMMERCIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

MOS

GULL WING

PARALLEL

ASYNCHRONOUS

131072 words

5

8

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

3-STATE

128KX8

128K

0 Cel

DUAL

R-PDSO-G32

5.5 V

1.2 mm

8 mm

Not Qualified

1048576 bit

4.5 V

1000 PROGRAM/ERASE CYCLES

NOR TYPE

18.415 mm

120 ns

12

TMS28F512-10C2DDE

Texas Instruments

FLASH

INDUSTRIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

30 mA

65536 words

5

NO

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.8,20

Flash Memories

.5 mm

85 Cel

64KX8

64K

-40 Cel

YES

DUAL

R-PDSO-G32

5.5 V

1.2 mm

100 Write/Erase Cycles

8 mm

Not Qualified

524288 bit

4.5 V

BULK ERASE

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.0001 Amp

18.415 mm

100 ns

12

NO

TMS29F008T-80CDCDL

Texas Instruments

FLASH

COMMERCIAL

40

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

60 mA

1048576 words

5

YES

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP40,.8,20

Flash Memories

.5 mm

70 Cel

3-STATE

1MX8

1M

0 Cel

1,2,1,15

YES

YES

DUAL

R-PDSO-G40

5.5 V

1.2 mm

100000 Write/Erase Cycles

10 mm

Not Qualified

TOP

8388608 bit

4.5 V

100000 PROGRAM/ERASE CYCLES

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.000005 Amp

18.4 mm

80 ns

5

YES

TMS28F800ZT70CDCDL

Texas Instruments

FLASH

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

5

8

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

1MX8

1M

0 Cel

DUAL

R-PDSO-G48

5.5 V

1.2 mm

12 mm

Not Qualified

TOP

8388608 bit

4.5 V

CONFG AS 512K X 16; TOP BOOT BLOCK

NOR TYPE

18.4 mm

70 ns

3

TMS28F400AEB80CDCDE

Texas Instruments

FLASH

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

MOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,96K,128K

65 mA

262144 words

3

NO

3/5

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

8

Flash Memories

.5 mm

85 Cel

3-STATE

256KX16

256K

-40 Cel

1,2,1,3

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

100000 Write/Erase Cycles

12 mm

Not Qualified

BOTTOM

4194304 bit

2.7 V

ALSO OPERATES AT 5V SUPPLY; BOTTOM BOOT BLOCK

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.000008 Amp

18.4 mm

150 ns

5

NO

TMS28F200AZB80BDCDE

Texas Instruments

FLASH

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

MOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,96K,128K

65 mA

262144 words

5

NO

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

8

Flash Memories

.5 mm

85 Cel

3-STATE

256KX8

256K

-40 Cel

1,2,1,1

YES

DUAL

R-PDSO-G48

5.5 V

1.2 mm

10000 Write/Erase Cycles

12 mm

Not Qualified

BOTTOM

2097152 bit

4.5 V

10000 PROGRAM/ERASE CYCLES; CONFG AS 128K X 16; BOTTOM BOOT BLOCK

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.000008 Amp

18.4 mm

80 ns

12

NO

TMS28F210-12C3DBWQ4

Texas Instruments

FLASH

AUTOMOTIVE

40

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

MOS

GULL WING

PARALLEL

ASYNCHRONOUS

65536 words

5

16

SMALL OUTLINE, THIN PROFILE

.5 mm

125 Cel

3-STATE

64KX16

64K

-40 Cel

DUAL

R-PDSO-G40

5.5 V

1.2 mm

10 mm

Not Qualified

1048576 bit

4.5 V

NOR TYPE

12.4 mm

120 ns

12

TMS28F010A-15C3DDQ4

Texas Instruments

FLASH

AUTOMOTIVE

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

MOS

GULL WING

PARALLEL

ASYNCHRONOUS

131072 words

5

8

SMALL OUTLINE, THIN PROFILE

.5 mm

125 Cel

3-STATE

128KX8

128K

-40 Cel

DUAL

R-PDSO-G32

5.5 V

1.2 mm

8 mm

Not Qualified

1048576 bit

4.5 V

1000 PROGRAM/ERASE CYCLES

NOR TYPE

18.415 mm

150 ns

12

TMS28F008LB10CDCDL

Texas Instruments

FLASH

COMMERCIAL

40

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

3.3

8

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

1MX8

1M

0 Cel

DUAL

R-PDSO-G40

3.6 V

1.2 mm

10 mm

Not Qualified

BOTTOM

8388608 bit

3 V

BOTTOM BOOT BLOCK

NOR TYPE

18.4 mm

100 ns

3

TMS28F010A-15C4DDQ

Texas Instruments

FLASH

AUTOMOTIVE

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

MOS

GULL WING

PARALLEL

ASYNCHRONOUS

30 mA

131072 words

5

NO

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.8,20

Flash Memories

.5 mm

125 Cel

3-STATE

128KX8

128K

-40 Cel

YES

DUAL

R-PDSO-G32

5.5 V

1.2 mm

10000 Write/Erase Cycles

8 mm

Not Qualified

1048576 bit

4.5 V

10000 PROGRAM/ERASE CYCLES

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.0001 Amp

18.415 mm

150 ns

12

NO

TMS28F200AZB60CDCDL

Texas Instruments

FLASH

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

MOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,96K,128K

65 mA

262144 words

5

NO

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

8

Flash Memories

.5 mm

70 Cel

3-STATE

256KX8

256K

0 Cel

1,2,1,1

YES

DUAL

R-PDSO-G48

5.5 V

1.2 mm

100000 Write/Erase Cycles

12 mm

Not Qualified

BOTTOM

2097152 bit

4.5 V

100000 PROGRAM/ERASE CYCLES; CONFG AS 128K X 16; BOTTOM BOOT BLOCK

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.000008 Amp

18.4 mm

60 ns

12

NO

TMS28F800LT12CDCDQ

Texas Instruments

FLASH

AUTOMOTIVE

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

3.3

8

SMALL OUTLINE, THIN PROFILE

.5 mm

125 Cel

1MX8

1M

-40 Cel

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

TOP

8388608 bit

3 V

CONFG AS 512K X 16; TOP BOOT BLOCK

NOR TYPE

18.4 mm

120 ns

3

TMS28F512A-10C3DDE

Texas Instruments

FLASH

INDUSTRIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

30 mA

65536 words

5

NO

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.8,20

Flash Memories

.5 mm

85 Cel

3-STATE

64KX8

64K

-40 Cel

YES

DUAL

R-PDSO-G32

5.5 V

1.2 mm

1000 Write/Erase Cycles

8 mm

Not Qualified

524288 bit

4.5 V

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.0001 Amp

18.415 mm

100 ns

12

NO

TMS28F800ZB80BDCDL

Texas Instruments

FLASH

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

5

8

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

1MX8

1M

0 Cel

DUAL

R-PDSO-G48

5.5 V

1.2 mm

12 mm

Not Qualified

BOTTOM

8388608 bit

4.5 V

CONFG AS 512K X 16; BOTTOM BOOT BLOCK

NOR TYPE

18.4 mm

80 ns

3

TMS28F010B-15C5DDE4

Texas Instruments

FLASH

INDUSTRIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

30 mA

131072 words

5

NO

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.8,20

Flash Memories

.5 mm

85 Cel

3-STATE

128KX8

128K

-40 Cel

YES

DUAL

R-PDSO-G32

5.5 V

1.2 mm

100000 Write/Erase Cycles

8 mm

Not Qualified

1048576 bit

4.5 V

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.0001 Amp

18.415 mm

150 ns

12

NO

TMS28F512-17C2DDQ4

Texas Instruments

FLASH

AUTOMOTIVE

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

30 mA

65536 words

5

NO

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.8,20

Flash Memories

.5 mm

125 Cel

64KX8

64K

-40 Cel

YES

DUAL

R-PDSO-G32

5.5 V

1.2 mm

100 Write/Erase Cycles

8 mm

Not Qualified

524288 bit

4.5 V

BULK ERASE

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.0001 Amp

18.415 mm

170 ns

12

NO

TMS28F512-15C4DDQ

Texas Instruments

FLASH

AUTOMOTIVE

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

30 mA

65536 words

5

NO

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.8,20

Flash Memories

.5 mm

125 Cel

64KX8

64K

-40 Cel

YES

DUAL

R-PDSO-G32

5.5 V

1.2 mm

10000 Write/Erase Cycles

8 mm

Not Qualified

524288 bit

4.5 V

BULK ERASE

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.0001 Amp

18.415 mm

150 ns

12

NO

TMS28F002AZB80CDCDL

Texas Instruments

FLASH

COMMERCIAL

40

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

MOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,96K,128K

65 mA

262144 words

5

NO

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP40,.8,20

Flash Memories

.5 mm

70 Cel

3-STATE

256KX8

256K

0 Cel

1,2,1,1

YES

DUAL

R-PDSO-G40

5.5 V

1.2 mm

100000 Write/Erase Cycles

10 mm

Not Qualified

BOTTOM

2097152 bit

4.5 V

100000 PROGRAM/ERASE CYCLES; BOTTOM BOOT BLOCK

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.000008 Amp

18.4 mm

80 ns

12

NO

TMS28F800AVB-120CDCDQ

Texas Instruments

FLASH

AUTOMOTIVE

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

3

8

SMALL OUTLINE, THIN PROFILE

.5 mm

125 Cel

1MX8

1M

-40 Cel

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

BOTTOM

8388608 bit

2.7 V

100000 PROGRAM/ERASE CYCLES; USER CONFG AS 512K X 16; BOTTOM BOOT BLOCK

NOR TYPE

18.4 mm

120 ns

3

TMS28F1600T90CDCDL

Texas Instruments

FLASH

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,96K,128K

35 mA

1048576 words

3

NO

3/5

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

8

Flash Memories

.5 mm

70 Cel

1MX16

1M

0 Cel

1,2,1,15

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

TOP

16777216 bit

2.7 V

ALSO REQUIRES 5V VCC FOR NORMAL OPERATION; TOP BOOT BLOCK

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.000005 Amp

18.4 mm

90 ns

3

NO

TMS28F400BZT-80CDBRE

Texas Instruments

FLASH

INDUSTRIAL

56

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,96K,128K

65 mA

524288 words

5

NO

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP56,.8,20

16

Flash Memories

.5 mm

85 Cel

3-STATE

512KX8

512K

-40 Cel

1,2,1,3

YES

DUAL

R-PDSO-G56

5.5 V

1.2 mm

100000 Write/Erase Cycles

14 mm

Not Qualified

TOP

4194304 bit

4.5 V

DEEP POWER-DOWN

NOR TYPE

.0000012 Amp

18.4 mm

80 ns

12

NO

TMS28F010-17C2DDE4

Texas Instruments

FLASH

INDUSTRIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

30 mA

131072 words

5

NO

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.8,20

Flash Memories

.5 mm

85 Cel

128KX8

128K

-40 Cel

YES

DUAL

R-PDSO-G32

5.5 V

1.2 mm

100 Write/Erase Cycles

8 mm

Not Qualified

1048576 bit

4.5 V

BULK ERASE

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.0001 Amp

18.415 mm

170 ns

12

NO

TMS28F800VB10CDCDL

Texas Instruments

FLASH

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

3

8

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

1MX8

1M

0 Cel

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

BOTTOM

8388608 bit

2.7 V

CONFG AS 512K X 16; BOTTOM BOOT BLOCK

NOR TYPE

18.4 mm

100 ns

3

TMS28F200AST70BDCDE

Texas Instruments

FLASH

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,96K,128K

65 mA

262144 words

3.3

NO

3.3/5

8

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

8

Flash Memories

.5 mm

85 Cel

3-STATE

256KX8

256K

-40 Cel

1,2,1,1

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

10000 Write/Erase Cycles

12 mm

Not Qualified

TOP

2097152 bit

3 V

CAN BE CONFG AS 128K X 16; TOP BOOT BLOCK

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.000008 Amp

18.4 mm

130 ns

5

NO

TMS28F800SZB-70CDBJQ

Texas Instruments

FLASH

AUTOMOTIVE

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

5

8

SMALL OUTLINE, THIN PROFILE

.5 mm

125 Cel

1MX8

1M

-40 Cel

DUAL

R-PDSO-G48

5.5 V

1.2 mm

12 mm

Not Qualified

BOTTOM

8388608 bit

4.5 V

100000 PROGRAM/ERASE CYCLES; TTL COMPATIBLE I/O; BOTTOM BOOT BLOCK

NOR TYPE

18.4 mm

70 ns

3

TMS28F800AST-70CDCDE

Texas Instruments

FLASH

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,96K,128K

60 mA

1048576 words

3.3

NO

3.3/5

8

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

8

Flash Memories

.5 mm

85 Cel

1MX8

1M

-40 Cel

1,2,1,7

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

100000 Write/Erase Cycles

12 mm

Not Qualified

TOP

8388608 bit

3 V

100000 PROGRAM/ERASE CYCLES; USER CONFG AS 512K X 16; TOP BOOT BLOCK

NOR TYPE

.000008 Amp

18.4 mm

100 ns

3

NO

TMS28F400BZB-80BDBRL

Texas Instruments

FLASH

COMMERCIAL

56

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,96K,128K

65 mA

524288 words

5

NO

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP56,.8,20

16

Flash Memories

.5 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

1,2,1,3

YES

DUAL

R-PDSO-G56

5.5 V

1.2 mm

10000 Write/Erase Cycles

14 mm

Not Qualified

BOTTOM

4194304 bit

4.5 V

DEEP POWER-DOWN

NOR TYPE

.0000012 Amp

18.4 mm

80 ns

12

NO

TMS28F800AVT-120BDCDL

Texas Instruments

FLASH

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

3

8

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

1MX8

1M

0 Cel

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

TOP

8388608 bit

2.7 V

10000 PROGRAM/ERASE CYCLES; USER CONFG AS 512K X 16; TOP BOOT BLOCK

NOR TYPE

18.4 mm

120 ns

3

TMS28F512A-17C4DDQ4

Texas Instruments

FLASH

AUTOMOTIVE

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

30 mA

65536 words

5

NO

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.8,20

Flash Memories

.5 mm

125 Cel

3-STATE

64KX8

64K

-40 Cel

YES

DUAL

R-PDSO-G32

5.5 V

1.2 mm

10000 Write/Erase Cycles

8 mm

Not Qualified

524288 bit

4.5 V

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.0001 Amp

18.415 mm

170 ns

12

NO

TMS28F040-15C4DDQ

Texas Instruments

FLASH

AUTOMOTIVE

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

32K

40 mA

524288 words

5

YES

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP40,.8,20

Flash Memories

.5 mm

125 Cel

512KX8

512K

-40 Cel

16

YES

DUAL

R-PDSO-G32

5.5 V

1.2 mm

10000 Write/Erase Cycles

8 mm

Not Qualified

4194304 bit

4.5 V

BULK ERASE; BLOCK ERASE; BYTE PROGRAMMABLE

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.0001 Amp

18.415 mm

150 ns

12

YES

TMS28F004AET70CDCDL

Texas Instruments

FLASH

COMMERCIAL

40

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,96K,128K

65 mA

524288 words

3

NO

3/5

8

SMALL OUTLINE, THIN PROFILE

TSSOP40,.8,20

Flash Memories

.5 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

1,2,1,3

YES

DUAL

R-PDSO-G40

3.6 V

1.2 mm

100000 Write/Erase Cycles

10 mm

Not Qualified

TOP

4194304 bit

2.7 V

USER-SELECTABLE 5V OR 12 V VPP; TOP BOOT BLOCK

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.000008 Amp

18.4 mm

130 ns

5

NO

TMS28F400AMB70BDCDL

Texas Instruments

FLASH

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

MOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,96K,128K

65 mA

262144 words

3.3

NO

3.3/5

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

8

Flash Memories

.5 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

1,2,1,3

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

10000 Write/Erase Cycles

12 mm

Not Qualified

BOTTOM

4194304 bit

3 V

ALSO OPERATES AT 5V SUPPLY; BOTTOM BOOT BLOCK

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.000005 Amp

18.4 mm

130 ns

12

NO

TMS29LF040-12C5DBWE

Texas Instruments

FLASH

INDUSTRIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

64K

60 mA

524288 words

3.3

YES

3.3

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.56,20

Flash Memories

.5 mm

85 Cel

3-STATE

512KX8

512K

-40 Cel

8

YES

DUAL

R-PDSO-G32

3.6 V

1.2 mm

100000 Write/Erase Cycles

8 mm

Not Qualified

4194304 bit

3 V

100000 PROGRAM/ERASE CYCLES

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.0001 Amp

12.4 mm

120 ns

3

YES

TMS28F004AET80CDCDL

Texas Instruments

FLASH

COMMERCIAL

40

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,96K,128K

65 mA

524288 words

3

NO

3/5

8

SMALL OUTLINE, THIN PROFILE

TSSOP40,.8,20

Flash Memories

.5 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

1,2,1,3

YES

DUAL

R-PDSO-G40

3.6 V

1.2 mm

100000 Write/Erase Cycles

10 mm

Not Qualified

TOP

4194304 bit

2.7 V

USER-SELECTABLE 5V OR 12 V VPP; TOP BOOT BLOCK

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.000008 Amp

18.4 mm

150 ns

5

NO

TMS29F010-150DDL4

Texas Instruments

FLASH

COMMERCIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K

15 mA

131072 words

5

YES

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.8,20

Flash Memories

.5 mm

70 Cel

3-STATE

128KX8

128K

0 Cel

8

YES

DUAL

R-PDSO-G32

5.25 V

1.2 mm

10000 Write/Erase Cycles

8 mm

Not Qualified

1048576 bit

4.75 V

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.001 Amp

18.415 mm

150 ns

5

YES

TMS28F008SB70BDCDQ

Texas Instruments

FLASH

AUTOMOTIVE

40

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

3.3

8

SMALL OUTLINE, THIN PROFILE

.5 mm

125 Cel

1MX8

1M

-40 Cel

DUAL

R-PDSO-G40

3.6 V

1.2 mm

10 mm

Not Qualified

BOTTOM

8388608 bit

3 V

USER SELECTABLE 5V VCC; BOTTOM BOOT BLOCK

NOR TYPE

18.4 mm

100 ns

3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.