TSOP1-R Flash Memory 1,075

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
TMS28F512-12C3DUE	Texas Instruments	FLASH	INDUSTRIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	Flash Memories	.5 mm	85 Cel	YES		64KX8	64K	-40 Cel		YES	DUAL	R-PDSO-G32	5.5 V	1.2 mm	1000 Write/Erase Cycles	8 mm	Not Qualified	524288 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	120 ns	12	NO
TMS28F040-12C4DUQ	Texas Instruments	FLASH	AUTOMOTIVE	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	32K	40 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20	Flash Memories	.5 mm	125 Cel	YES		512KX8	512K	-40 Cel	16	YES	DUAL	R-PDSO-G32	5.5 V	1.2 mm	10000 Write/Erase Cycles	8 mm	Not Qualified	4194304 bit	4.5 V	BULK ERASE; BLOCK ERASE; BYTE PROGRAMMABLE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	120 ns	12	YES
TMS28F512-10C3DUE	Texas Instruments	FLASH	INDUSTRIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	Flash Memories	.5 mm	85 Cel	YES		64KX8	64K	-40 Cel		YES	DUAL	R-PDSO-G32	5.5 V	1.2 mm	1000 Write/Erase Cycles	8 mm	Not Qualified	524288 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	100 ns	12	NO
TMS28F010B-10C4DUQ	Texas Instruments	FLASH	AUTOMOTIVE	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	Flash Memories	.5 mm	125 Cel	YES	3-STATE	128KX8	128K	-40 Cel		YES	DUAL	R-PDSO-G32	5.5 V	1.2 mm	10000 Write/Erase Cycles	8 mm	Not Qualified	1048576 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	100 ns	12	NO
TMS28F512-15C4DUL4	Texas Instruments	FLASH	COMMERCIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	Flash Memories	.5 mm	70 Cel	YES		64KX8	64K	0 Cel		YES	DUAL	R-PDSO-G32	5.5 V	1.2 mm	10000 Write/Erase Cycles	8 mm	Not Qualified	524288 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	150 ns	12	NO
TMS28F010B-15C4DUQ	Texas Instruments	FLASH	AUTOMOTIVE	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	Flash Memories	.5 mm	125 Cel	YES	3-STATE	128KX8	128K	-40 Cel		YES	DUAL	R-PDSO-G32	5.5 V	1.2 mm	10000 Write/Erase Cycles	8 mm	Not Qualified	1048576 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	150 ns	12	NO
TMS28F512A-10C4DUL4	Texas Instruments	FLASH	COMMERCIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	Flash Memories	.5 mm	70 Cel	YES	3-STATE	64KX8	64K	0 Cel		YES	DUAL	R-PDSO-G32	5.5 V	1.2 mm	10000 Write/Erase Cycles	8 mm	Not Qualified	524288 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	100 ns	12	NO
TMS28F512-12C3DUL4	Texas Instruments	FLASH	COMMERCIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	Flash Memories	.5 mm	70 Cel	YES		64KX8	64K	0 Cel		YES	DUAL	R-PDSO-G32	5.5 V	1.2 mm	1000 Write/Erase Cycles	8 mm	Not Qualified	524288 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	120 ns	12	NO
TMS28F512A-15C4DUQ4	Texas Instruments	FLASH	AUTOMOTIVE	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	Flash Memories	.5 mm	125 Cel	YES	3-STATE	64KX8	64K	-40 Cel		YES	DUAL	R-PDSO-G32	5.5 V	1.2 mm	10000 Write/Erase Cycles	8 mm	Not Qualified	524288 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	150 ns	12	NO
TMS28F040-10C2DUQ	Texas Instruments	FLASH	AUTOMOTIVE	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	32K	40 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20	Flash Memories	.5 mm	125 Cel	YES		512KX8	512K	-40 Cel	16	YES	DUAL	R-PDSO-G32	5.5 V	1.2 mm	100 Write/Erase Cycles	8 mm	Not Qualified	4194304 bit	4.5 V	BULK ERASE; BLOCK ERASE; BYTE PROGRAMMABLE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	100 ns	12	YES
TMS28F512A-15C4DUE4	Texas Instruments	FLASH	INDUSTRIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	Flash Memories	.5 mm	85 Cel	YES	3-STATE	64KX8	64K	-40 Cel		YES	DUAL	R-PDSO-G32	5.5 V	1.2 mm	10000 Write/Erase Cycles	8 mm	Not Qualified	524288 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	150 ns	12	NO
TMS28F512-17C3DUQ4	Texas Instruments	FLASH	AUTOMOTIVE	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	Flash Memories	.5 mm	125 Cel	YES		64KX8	64K	-40 Cel		YES	DUAL	R-PDSO-G32	5.5 V	1.2 mm	1000 Write/Erase Cycles	8 mm	Not Qualified	524288 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	170 ns	12	NO
TMS28F010-12C4DUL4	Texas Instruments	FLASH	COMMERCIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	Flash Memories	.5 mm	70 Cel	YES		128KX8	128K	0 Cel		YES	DUAL	R-PDSO-G32	5.5 V	1.2 mm	10000 Write/Erase Cycles	8 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	120 ns	12	NO
TMS28F010-17C2DUQ4	Texas Instruments	FLASH	AUTOMOTIVE	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	Flash Memories	.5 mm	125 Cel	YES		128KX8	128K	-40 Cel		YES	DUAL	R-PDSO-G32	5.5 V	1.2 mm	100 Write/Erase Cycles	8 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	170 ns	12	NO
TMS28F010-17C2DUQ	Texas Instruments	FLASH	AUTOMOTIVE	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	Flash Memories	.5 mm	125 Cel	YES		128KX8	128K	-40 Cel		YES	DUAL	R-PDSO-G32	5.5 V	1.2 mm	100 Write/Erase Cycles	8 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	170 ns	12	NO
TMS28F010-17C4DUE4	Texas Instruments	FLASH	INDUSTRIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	Flash Memories	.5 mm	85 Cel	YES		128KX8	128K	-40 Cel		YES	DUAL	R-PDSO-G32	5.5 V	1.2 mm	10000 Write/Erase Cycles	8 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	170 ns	12	NO
TMS28F512A-17C3DUL4	Texas Instruments	FLASH	COMMERCIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	Flash Memories	.5 mm	70 Cel	YES	3-STATE	64KX8	64K	0 Cel		YES	DUAL	R-PDSO-G32	5.5 V	1.2 mm	1000 Write/Erase Cycles	8 mm	Not Qualified	524288 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	170 ns	12	NO
TMS28F010-12C3DUL	Texas Instruments	FLASH	COMMERCIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	Flash Memories	.5 mm	70 Cel	YES		128KX8	128K	0 Cel		YES	DUAL	R-PDSO-G32	5.5 V	1.2 mm	1000 Write/Erase Cycles	8 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	120 ns	12	NO
TMS28F010B-12C5DUE4	Texas Instruments	FLASH	INDUSTRIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	Flash Memories	.5 mm	85 Cel	YES	3-STATE	128KX8	128K	-40 Cel		YES	DUAL	R-PDSO-G32	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified	1048576 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	120 ns	12	NO
TMS28F010-12C2DUL4	Texas Instruments	FLASH	COMMERCIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	Flash Memories	.5 mm	70 Cel	YES		128KX8	128K	0 Cel		YES	DUAL	R-PDSO-G32	5.5 V	1.2 mm	100 Write/Erase Cycles	8 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	120 ns	12	NO
TMS28F010B-10C5DUQ4	Texas Instruments	FLASH	AUTOMOTIVE	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	Flash Memories	.5 mm	125 Cel	YES	3-STATE	128KX8	128K	-40 Cel		YES	DUAL	R-PDSO-G32	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified	1048576 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	100 ns	12	NO
TMS29F040-90C5DUE	Texas Instruments	FLASH	INDUSTRIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	60 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	Flash Memories	.5 mm	85 Cel	YES	3-STATE	512KX8	512K	-40 Cel	8	YES	DUAL	R-PDSO-G32	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified	4194304 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	90 ns	5	YES
TMS28F512A-12C4DUL	Texas Instruments	FLASH	COMMERCIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	Flash Memories	.5 mm	70 Cel	YES	3-STATE	64KX8	64K	0 Cel		YES	DUAL	R-PDSO-G32	5.5 V	1.2 mm	10000 Write/Erase Cycles	8 mm	Not Qualified	524288 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	120 ns	12	NO
TMS28F512A-10C3DUL	Texas Instruments	FLASH	COMMERCIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	Flash Memories	.5 mm	70 Cel	YES	3-STATE	64KX8	64K	0 Cel		YES	DUAL	R-PDSO-G32	5.5 V	1.2 mm	1000 Write/Erase Cycles	8 mm	Not Qualified	524288 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	100 ns	12	NO
TMS28F512A-10C4DUQ4	Texas Instruments	FLASH	AUTOMOTIVE	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	Flash Memories	.5 mm	125 Cel	YES	3-STATE	64KX8	64K	-40 Cel		YES	DUAL	R-PDSO-G32	5.5 V	1.2 mm	10000 Write/Erase Cycles	8 mm	Not Qualified	524288 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	100 ns	12	NO
TMS28F512-17C4DUQ	Texas Instruments	FLASH	AUTOMOTIVE	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	Flash Memories	.5 mm	125 Cel	YES		64KX8	64K	-40 Cel		YES	DUAL	R-PDSO-G32	5.5 V	1.2 mm	10000 Write/Erase Cycles	8 mm	Not Qualified	524288 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	170 ns	12	NO
TMS28F512A-17C3DUL	Texas Instruments	FLASH	COMMERCIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	Flash Memories	.5 mm	70 Cel	YES	3-STATE	64KX8	64K	0 Cel		YES	DUAL	R-PDSO-G32	5.5 V	1.2 mm	1000 Write/Erase Cycles	8 mm	Not Qualified	524288 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	170 ns	12	NO
TMS28F010A-17C3DUL4	Texas Instruments	FLASH	COMMERCIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS			131072 words	5			8	SMALL OUTLINE, THIN PROFILE			.5 mm	70 Cel		3-STATE	128KX8	128K	0 Cel			DUAL	R-PDSO-G32	5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V	1000 PROGRAM/ERASE CYCLES			NOR TYPE		18.415 mm	170 ns	12
TMS28F010-10C4DUE	Texas Instruments	FLASH	INDUSTRIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	Flash Memories	.5 mm	85 Cel	YES		128KX8	128K	-40 Cel		YES	DUAL	R-PDSO-G32	5.5 V	1.2 mm	10000 Write/Erase Cycles	8 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	100 ns	12	NO
TMS28F010-17C3DUL	Texas Instruments	FLASH	COMMERCIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	Flash Memories	.5 mm	70 Cel	YES		128KX8	128K	0 Cel		YES	DUAL	R-PDSO-G32	5.5 V	1.2 mm	1000 Write/Erase Cycles	8 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	170 ns	12	NO
TMS29VF040-20C5DUL4	Texas Instruments	FLASH	COMMERCIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	60 mA	524288 words	3.3	YES	3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	Flash Memories	.5 mm	70 Cel	YES	3-STATE	512KX8	512K	0 Cel	8	YES	DUAL	R-PDSO-G32	3.6 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified	4194304 bit	2.7 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	200 ns	3	YES
TMS28F512A-10C3DUQ	Texas Instruments	FLASH	AUTOMOTIVE	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	Flash Memories	.5 mm	125 Cel	YES	3-STATE	64KX8	64K	-40 Cel		YES	DUAL	R-PDSO-G32	5.5 V	1.2 mm	1000 Write/Erase Cycles	8 mm	Not Qualified	524288 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	100 ns	12	NO
TMS28F512-10C3DUQ4	Texas Instruments	FLASH	AUTOMOTIVE	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	Flash Memories	.5 mm	125 Cel	YES		64KX8	64K	-40 Cel		YES	DUAL	R-PDSO-G32	5.5 V	1.2 mm	1000 Write/Erase Cycles	8 mm	Not Qualified	524288 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	100 ns	12	NO
TMS28F010-12C3DUL4	Texas Instruments	FLASH	COMMERCIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	Flash Memories	.5 mm	70 Cel	YES		128KX8	128K	0 Cel		YES	DUAL	R-PDSO-G32	5.5 V	1.2 mm	1000 Write/Erase Cycles	8 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	120 ns	12	NO
TMS28F512A-12C4DUQ4	Texas Instruments	FLASH	AUTOMOTIVE	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	Flash Memories	.5 mm	125 Cel	YES	3-STATE	64KX8	64K	-40 Cel		YES	DUAL	R-PDSO-G32	5.5 V	1.2 mm	10000 Write/Erase Cycles	8 mm	Not Qualified	524288 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	120 ns	12	NO
TMS28F010A-15C3DUQ	Texas Instruments	FLASH	AUTOMOTIVE	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	Flash Memories	.5 mm	125 Cel	YES	3-STATE	128KX8	128K	-40 Cel		YES	DUAL	R-PDSO-G32	5.5 V	1.2 mm	1000 Write/Erase Cycles	8 mm	Not Qualified	1048576 bit	4.5 V	1000 PROGRAM/ERASE CYCLES	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	150 ns	12	NO
TMS28F040-12C2DUL	Texas Instruments	FLASH	COMMERCIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	32K	40 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20	Flash Memories	.5 mm	70 Cel	YES		512KX8	512K	0 Cel	16	YES	DUAL	R-PDSO-G32	5.5 V	1.2 mm	100 Write/Erase Cycles	8 mm	Not Qualified	4194304 bit	4.5 V	BULK ERASE; BLOCK ERASE; BYTE PROGRAMMABLE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	120 ns	12	YES
TMS28F010-17C4DUE	Texas Instruments	FLASH	INDUSTRIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	Flash Memories	.5 mm	85 Cel	YES		128KX8	128K	-40 Cel		YES	DUAL	R-PDSO-G32	5.5 V	1.2 mm	10000 Write/Erase Cycles	8 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	170 ns	12	NO
TMS28F010A-10C3DUQ4	Texas Instruments	FLASH	AUTOMOTIVE	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS			131072 words	5			8	SMALL OUTLINE, THIN PROFILE			.5 mm	125 Cel		3-STATE	128KX8	128K	-40 Cel			DUAL	R-PDSO-G32	5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V	1000 PROGRAM/ERASE CYCLES			NOR TYPE		18.415 mm	100 ns	12
TMS28F010-17C2DUE4	Texas Instruments	FLASH	INDUSTRIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	Flash Memories	.5 mm	85 Cel	YES		128KX8	128K	-40 Cel		YES	DUAL	R-PDSO-G32	5.5 V	1.2 mm	100 Write/Erase Cycles	8 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	170 ns	12	NO
TMS28F040-10C3DUL	Texas Instruments	FLASH	COMMERCIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	32K	40 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20	Flash Memories	.5 mm	70 Cel	YES		512KX8	512K	0 Cel	16	YES	DUAL	R-PDSO-G32	5.5 V	1.2 mm	1000 Write/Erase Cycles	8 mm	Not Qualified	4194304 bit	4.5 V	BULK ERASE; BLOCK ERASE; BYTE PROGRAMMABLE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	100 ns	12	YES
TMS28F512-12C2DUE4	Texas Instruments	FLASH	INDUSTRIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	Flash Memories	.5 mm	85 Cel	YES		64KX8	64K	-40 Cel		YES	DUAL	R-PDSO-G32	5.5 V	1.2 mm	100 Write/Erase Cycles	8 mm	Not Qualified	524288 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	120 ns	12	NO
TMS28F010A-17C3DUE4	Texas Instruments	FLASH	INDUSTRIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS			131072 words	5			8	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel		3-STATE	128KX8	128K	-40 Cel			DUAL	R-PDSO-G32	5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V	1000 PROGRAM/ERASE CYCLES			NOR TYPE		18.415 mm	170 ns	12
TMS28F512-15C2DUQ	Texas Instruments	FLASH	AUTOMOTIVE	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	Flash Memories	.5 mm	125 Cel	YES		64KX8	64K	-40 Cel		YES	DUAL	R-PDSO-G32	5.5 V	1.2 mm	100 Write/Erase Cycles	8 mm	Not Qualified	524288 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	150 ns	12	NO
TMS28F010A-10C3DUE	Texas Instruments	FLASH	INDUSTRIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	Flash Memories	.5 mm	85 Cel	YES	3-STATE	128KX8	128K	-40 Cel		YES	DUAL	R-PDSO-G32	5.5 V	1.2 mm	1000 Write/Erase Cycles	8 mm	Not Qualified	1048576 bit	4.5 V	1000 PROGRAM/ERASE CYCLES	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	100 ns	12	NO
TMS29F040-12C5DUL4	Texas Instruments	FLASH	COMMERCIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	60 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	Flash Memories	.5 mm	70 Cel	YES	3-STATE	512KX8	512K	0 Cel	8	YES	DUAL	R-PDSO-G32	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified	4194304 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	120 ns	5	YES
TMS28F010A-10C4DUE	Texas Instruments	FLASH	INDUSTRIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	Flash Memories	.5 mm	85 Cel	YES	3-STATE	128KX8	128K	-40 Cel		YES	DUAL	R-PDSO-G32	5.5 V	1.2 mm	10000 Write/Erase Cycles	8 mm	Not Qualified	1048576 bit	4.5 V	10000 PROGRAM/ERASE CYCLES	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	100 ns	12	NO
TMS28F512A-12C4DUL4	Texas Instruments	FLASH	COMMERCIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	Flash Memories	.5 mm	70 Cel	YES	3-STATE	64KX8	64K	0 Cel		YES	DUAL	R-PDSO-G32	5.5 V	1.2 mm	10000 Write/Erase Cycles	8 mm	Not Qualified	524288 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	120 ns	12	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.