VFLGA Flash Memory 128

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
SST39VF400A-70-4I-C1QE	Microchip Technology	FLASH	INDUSTRIAL	48	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS	2K	30 mA	262144 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	LGA48,6X11,20	Flash Memories	.5 mm	85 Cel	256KX16	256K	-40 Cel	128	YES	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM	R-PBGA-B48	3	3.6 V	.52 mm	4 mm	Not Qualified	4194304 bit	2.7 V			e1	40	260	NOR TYPE	.00002 Amp	6 mm	YES	70 ns	2.7	YES
SST39WF400A-90-4I-C1Q	Silicon Storage Technology	FLASH	INDUSTRIAL	48	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS	2K	20 mA	262144 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X11,20	Flash Memories	.5 mm	85 Cel	256KX16	256K	-40 Cel	128	YES	TIN LEAD		BOTTOM	R-PBGA-B48		1.95 V	.52 mm	4 mm	Not Qualified	4194304 bit	1.7 V			e0		240	NOR TYPE	.00002 Amp	6 mm	YES	90 ns	1.8	YES
SST39WF400A-90-4I-C1QE	Microchip Technology	FLASH	INDUSTRIAL	48	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			262144 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	256KX16	256K	-40 Cel					BOTTOM	R-PBGA-B48		1.95 V	.52 mm	4 mm	Not Qualified	4194304 bit	1.7 V						NOR TYPE		6 mm		90 ns	1.8
K9K2G08U1A-IIB00	Samsung	FLASH	INDUSTRIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS	128K	30 mA	268435456 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	LGA52(UNSPEC)	Flash Memories		85 Cel	256MX8	256M	-40 Cel	2K	YES		YES	BOTTOM	R-PBGA-B52		3.6 V	.65 mm	12 mm	Not Qualified	2147483648 bit	2.7 V	CONTAINS ADDITIONAL 32M BIT NAND FLASH	2K		NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.00005 Amp	17 mm		20 ns	2.7	NO
K9K8G08U1M-IIB00	Samsung	FLASH	INDUSTRIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			1073741824 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				85 Cel	1GX8	1G	-40 Cel					BOTTOM	R-PBGA-B52	2	3.6 V	.65 mm	12 mm	Not Qualified	8589934592 bit	2.7 V								17 mm		20 ns	2.7
K9K8G08U1M-ICB00	Samsung	FLASH	COMMERCIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			1073741824 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				70 Cel	1GX8	1G	0 Cel					BOTTOM	R-PBGA-B52	2	3.6 V	.65 mm	12 mm	Not Qualified	8589934592 bit	2.7 V	CONTAINS ADDITIONAL 128M BIT NAND FLASH							17 mm		20 ns	2.7
K9K8G08U1B000000	Samsung	FLASH	INDUSTRIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			1073741824 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				85 Cel	1GX8	1G	-40 Cel					BOTTOM	R-PBGA-B52		3.6 V	.65 mm	12 mm		8589934592 bit	2.7 V								17 mm		25 ns	3.3
K9K4G08U1M-ICB00	Samsung	FLASH	COMMERCIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS	128K	30 mA	536870912 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	LGA52(UNSPEC)	Flash Memories	1 mm	70 Cel	512MX8	512M	0 Cel	4K	YES		YES	BOTTOM	R-PBGA-B52	3	3.6 V	.65 mm	12 mm	Not Qualified	4294967296 bit	2.7 V	CONTAINS ADDITIONAL 64M BIT NAND FLASH	2K					.00005 Amp	17 mm		30 ns	2.7	NO
K9WAG08U1A-IIB00	Samsung	FLASH	INDUSTRIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS	128K	35 mA	2147483648 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	LGA52(UNSPEC)	Flash Memories		85 Cel	2GX8	2G	-40 Cel	16K	YES		YES	BOTTOM	R-PBGA-B52	3	3.6 V	1 mm	12 mm	Not Qualified	17179869184 bit	2.7 V		2K			260		.0001 Amp	17 mm		20 ns	2.7	NO
K9K4G08U1M-IIB00	Samsung	FLASH	INDUSTRIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS	128K	30 mA	536870912 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	LGA52(UNSPEC)	Flash Memories	1 mm	85 Cel	512MX8	512M	-40 Cel	4K	YES		YES	BOTTOM	R-PBGA-B52	3	3.6 V	.65 mm	12 mm	Not Qualified	4294967296 bit	2.7 V	CONTAINS ADDITIONAL 64M BIT NAND FLASH	2K					.00005 Amp	17 mm		30 ns	2.7	NO
K9K2G08U1A-ICB00	Samsung	FLASH	COMMERCIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS	128K	30 mA	268435456 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	LGA52(UNSPEC)	Flash Memories		70 Cel	256MX8	256M	0 Cel	2K	YES		YES	BOTTOM	R-PBGA-B52		3.6 V	.65 mm	12 mm	Not Qualified	2147483648 bit	2.7 V	CONTAINS ADDITIONAL 32M BIT NAND FLASH	2K		NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.00005 Amp	17 mm		20 ns	2.7	NO
K9F4G08U0M-ICB00	Samsung	FLASH	COMMERCIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS	128K	30 mA	536870912 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	LGA52(UNSPEC)	Flash Memories		70 Cel	512MX8	512M	0 Cel	4K	YES		YES	BOTTOM	R-PBGA-B52		3.6 V	.65 mm	12 mm	Not Qualified	4294967296 bit	2.7 V	CONTAINS ADDITIONAL 128M BIT NAND FLASH	2K		NOT SPECIFIED	NOT SPECIFIED		.00005 Amp	17 mm		20 ns	2.7	NO
K9F4G08U0M-IIB00	Samsung	FLASH	INDUSTRIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS	128K	30 mA	536870912 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	LGA52(UNSPEC)	Flash Memories		85 Cel	512MX8	512M	-40 Cel	4K	YES		YES	BOTTOM	R-PBGA-B52		3.6 V	.65 mm	12 mm	Not Qualified	4294967296 bit	2.7 V	CONTAINS ADDITIONAL 128M BIT NAND FLASH	2K		NOT SPECIFIED	NOT SPECIFIED		.00005 Amp	17 mm		20 ns	2.7	NO
K9WAG08U1A-ICB00	Samsung	FLASH	COMMERCIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS	128K	35 mA	2147483648 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	LGA52(UNSPEC)	Flash Memories		70 Cel	2GX8	2G	0 Cel	16K	YES		YES	BOTTOM	R-PBGA-B52		3.6 V	1 mm	12 mm	Not Qualified	17179869184 bit	2.7 V		2K		NOT SPECIFIED	NOT SPECIFIED		.0001 Amp	17 mm		20 ns	2.7	NO
MT29F128G08CECABC5-10:A	Micron Technology	FLASH	COMMERCIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	SYNCHRONOUS			17179869184 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				70 Cel	16GX8	16G	0 Cel					BOTTOM	R-PBGA-B52		3.6 V	1 mm	14 mm		137438953472 bit	2.7 V				30	260	MLC NAND TYPE		18 mm			2.7
MT29F64G08CBAAAC5IT:A	Micron Technology	FLASH	INDUSTRIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				85 Cel	8GX8	8G	-40 Cel					BOTTOM	R-PBGA-B52		3.6 V	1 mm	14 mm		68719476736 bit	2.7 V				30	260	MLC NAND TYPE		18 mm			2.7
MT29F256G08CJAABC5-12ITZ:A	Micron Technology	FLASH	INDUSTRIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	SYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				85 Cel	32GX8	32G	-40 Cel					BOTTOM	R-PBGA-B52		3.6 V	1 mm	14 mm		274877906944 bit	2.7 V				30	260	MLC NAND TYPE		18 mm			2.7
MT29F64G08CBAABC5-10Z:A	Micron Technology	FLASH	COMMERCIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	SYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				70 Cel	8GX8	8G	0 Cel					BOTTOM	R-PBGA-B52		3.6 V	1 mm	14 mm		68719476736 bit	2.7 V				30	260	MLC NAND TYPE		18 mm			2.7
MT29F512G08CUCABC5-10IT:A	Micron Technology	FLASH	INDUSTRIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	SYNCHRONOUS			68719476736 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				85 Cel	64GX8	64G	-40 Cel					BOTTOM	R-PBGA-B52		3.6 V	1 mm	14 mm		549755813888 bit	2.7 V				30	260	MLC NAND TYPE		18 mm			2.7
MT29F512G08CUAAAC5:A	Micron Technology	FLASH	COMMERCIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			68719476736 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				70 Cel	64GX8	64G	0 Cel					BOTTOM	R-PBGA-B52		3.6 V	1 mm	14 mm		549755813888 bit	2.7 V				30	260	MLC NAND TYPE		18 mm			2.7
MT29F32G08AFABAC5-12IT:B	Micron Technology	FLASH	INDUSTRIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			4294967296 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				85 Cel	4GX8	4G	-40 Cel					BOTTOM	R-PBGA-B52		3.6 V	1 mm	14 mm		34359738368 bit	2.7 V				30	260	SLC NAND TYPE		18 mm			2.7
MT29F32G08AFABAC5-12:B	Micron Technology	FLASH	COMMERCIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			4294967296 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				70 Cel	4GX8	4G	0 Cel					BOTTOM	R-PBGA-B52		3.6 V	1 mm	14 mm		34359738368 bit	2.7 V				30	260	SLC NAND TYPE		18 mm			2.7
MT29F64G08AKABAC5:B	Micron Technology	FLASH	COMMERCIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				70 Cel	8GX8	8G	0 Cel					BOTTOM	R-PBGA-B52		3.6 V	1 mm	14 mm		68719476736 bit	2.7 V				30	260	SLC NAND TYPE		18 mm			2.7
MT29F256G08CMAAAC5IT:A	Micron Technology	FLASH	INDUSTRIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				85 Cel	32GX8	32G	-40 Cel					BOTTOM	R-PBGA-B52		3.6 V	1 mm	14 mm		274877906944 bit	2.7 V				30	260	MLC NAND TYPE		18 mm			2.7
MT29F256G08CKAAAC5IT:A	Micron Technology	FLASH	INDUSTRIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				85 Cel	32GX8	32G	-40 Cel					BOTTOM	R-PBGA-B52		3.6 V	1 mm	14 mm		274877906944 bit	2.7 V				30	260	MLC NAND TYPE		18 mm			2.7
MT29F256G08CKCABC5-12:A	Micron Technology	FLASH	COMMERCIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	SYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				70 Cel	32GX8	32G	0 Cel					BOTTOM	R-PBGA-B52		3.6 V	1 mm	14 mm		274877906944 bit	2.7 V				30	260	MLC NAND TYPE		18 mm			2.7
MT29F32G08AECBBC5-12:B	Micron Technology	FLASH	COMMERCIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	SYNCHRONOUS			4294967296 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				70 Cel	4GX8	4G	0 Cel					BOTTOM	R-PBGA-B52		3.6 V	1 mm	14 mm		34359738368 bit	2.7 V				30	260	SLC NAND TYPE		18 mm			2.7
MT29F256G08CJAABC5-10Z:A	Micron Technology	FLASH	COMMERCIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	SYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				70 Cel	32GX8	32G	0 Cel					BOTTOM	R-PBGA-B52		3.6 V	1 mm	14 mm		274877906944 bit	2.7 V				30	260	MLC NAND TYPE		18 mm			2.7
MT29F512G08CUAAAC5Z:A	Micron Technology	FLASH	COMMERCIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			68719476736 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				70 Cel	64GX8	64G	0 Cel					BOTTOM	R-PBGA-B52		3.6 V	1 mm	14 mm		549755813888 bit	2.7 V				30	260	MLC NAND TYPE		18 mm			2.7
MT29F64G08CBAAAC5:A	Micron Technology	FLASH	COMMERCIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				70 Cel	8GX8	8G	0 Cel					BOTTOM	R-PBGA-B52		3.6 V	1 mm	14 mm		68719476736 bit	2.7 V				30	260	MLC NAND TYPE		18 mm			2.7
MT29F256G08CMCABC5-10Z:A	Micron Technology	FLASH	COMMERCIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	SYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				70 Cel	32GX8	32G	0 Cel					BOTTOM	R-PBGA-B52		3.6 V	1 mm	14 mm		274877906944 bit	2.7 V				30	260	MLC NAND TYPE		18 mm			2.7
MT29F128G08CFAAAC5Z:A	Micron Technology	FLASH	COMMERCIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			17179869184 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				70 Cel	16GX8	16G	0 Cel					BOTTOM	R-PBGA-B52		3.6 V	1 mm	14 mm		137438953472 bit	2.7 V				30	260	MLC NAND TYPE		18 mm			2.7
MT29F256G08CKCABC5-12ITZ:A	Micron Technology	FLASH	INDUSTRIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	SYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				85 Cel	32GX8	32G	-40 Cel					BOTTOM	R-PBGA-B52		3.6 V	1 mm	14 mm		274877906944 bit	2.7 V				30	260	MLC NAND TYPE		18 mm			2.7
MT29F128G08AUABAC5-IT:B	Micron Technology	FLASH	INDUSTRIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			17179869184 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				85 Cel	16GX8	16G	-40 Cel					BOTTOM	R-PBGA-B52		3.6 V	1 mm	14 mm		137438953472 bit	2.7 V				30	260	MLC NAND TYPE		18 mm			2.7
MT29F16G08ABABAC5-12:B	Micron Technology	FLASH	COMMERCIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			2147483648 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				70 Cel	2GX8	2G	0 Cel					BOTTOM	R-PBGA-B52		3.6 V	1 mm	14 mm		17179869184 bit	2.7 V				30	260	SLC NAND TYPE		18 mm			2.7
MT29F64G08CBAAAC5ITZ:A	Micron Technology	FLASH	INDUSTRIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				85 Cel	8GX8	8G	-40 Cel					BOTTOM	R-PBGA-B52		3.6 V	1 mm	14 mm		68719476736 bit	2.7 V				30	260	MLC NAND TYPE		18 mm			2.7
MT29F256G08CMCABC5-12ITZ:A	Micron Technology	FLASH	INDUSTRIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	SYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				85 Cel	32GX8	32G	-40 Cel					BOTTOM	R-PBGA-B52		3.6 V	1 mm	14 mm		274877906944 bit	2.7 V				30	260	MLC NAND TYPE		18 mm			2.7
MT29F256G08CMCABC5-10:A	Micron Technology	FLASH	COMMERCIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	SYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				70 Cel	32GX8	32G	0 Cel					BOTTOM	R-PBGA-B52		3.6 V	1 mm	14 mm		274877906944 bit	2.7 V				30	260	MLC NAND TYPE		18 mm			2.7
MT29F512G08CUCABC5-10:A	Micron Technology	FLASH	COMMERCIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	SYNCHRONOUS			68719476736 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				70 Cel	64GX8	64G	0 Cel					BOTTOM	R-PBGA-B52		3.6 V	1 mm	14 mm		549755813888 bit	2.7 V				30	260	MLC NAND TYPE		18 mm			2.7
MT29F128G08CECABC5-10IT:A	Micron Technology	FLASH	INDUSTRIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	SYNCHRONOUS			17179869184 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				85 Cel	16GX8	16G	-40 Cel					BOTTOM	R-PBGA-B52		3.6 V	1 mm	14 mm		137438953472 bit	2.7 V				30	260	MLC NAND TYPE		18 mm			2.7
MT29F256G08CMCABC5-12Z:A	Micron Technology	FLASH	COMMERCIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	SYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				70 Cel	32GX8	32G	0 Cel					BOTTOM	R-PBGA-B52		3.6 V	1 mm	14 mm		274877906944 bit	2.7 V				30	260	MLC NAND TYPE		18 mm			2.7
MT29F16G08ABABAC5-12IT:B	Micron Technology	FLASH	INDUSTRIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			2147483648 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				85 Cel	2GX8	2G	-40 Cel					BOTTOM	R-PBGA-B52		3.6 V	1 mm	14 mm		17179869184 bit	2.7 V				30	260	SLC NAND TYPE		18 mm			2.7
MT29F128G08CFAABC5-10IT:A	Micron Technology	FLASH	INDUSTRIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	SYNCHRONOUS			17179869184 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				85 Cel	16GX8	16G	-40 Cel					BOTTOM	R-PBGA-B52		3.6 V	1 mm	14 mm		137438953472 bit	2.7 V				30	260	MLC NAND TYPE		18 mm			2.7
MT29F256G08CMCABC5-10IT:A	Micron Technology	FLASH	INDUSTRIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	SYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				85 Cel	32GX8	32G	-40 Cel					BOTTOM	R-PBGA-B52		3.6 V	1 mm	14 mm		274877906944 bit	2.7 V				30	260	MLC NAND TYPE		18 mm			2.7
MT29F64G08CBAABC5-12ITZ:A	Micron Technology	FLASH	INDUSTRIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	SYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				85 Cel	8GX8	8G	-40 Cel					BOTTOM	R-PBGA-B52		3.6 V	1 mm	14 mm		68719476736 bit	2.7 V				30	260	MLC NAND TYPE		18 mm			2.7
MT29F128G08AUCBBC5-12IT:B	Micron Technology	FLASH	INDUSTRIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	SYNCHRONOUS			17179869184 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				85 Cel	16GX8	16G	-40 Cel					BOTTOM	R-PBGA-B52		3.6 V	1 mm	14 mm		137438953472 bit	2.7 V				30	260	MLC NAND TYPE		18 mm			2.7
MT29F128G08CFAABC5-10ITZ:A	Micron Technology	FLASH	INDUSTRIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	SYNCHRONOUS			17179869184 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				85 Cel	16GX8	16G	-40 Cel					BOTTOM	R-PBGA-B52		3.6 V	1 mm	14 mm		137438953472 bit	2.7 V				30	260	MLC NAND TYPE		18 mm			2.7
MT29F128G08CECABC5-12Z:A	Micron Technology	FLASH	COMMERCIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	SYNCHRONOUS			17179869184 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				70 Cel	16GX8	16G	0 Cel					BOTTOM	R-PBGA-B52		3.6 V	1 mm	14 mm		137438953472 bit	2.7 V				30	260	MLC NAND TYPE		18 mm			2.7

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.